GB939102A - Improvements in and relating to the production of crystals, and apparatus for use therein - Google Patents

Improvements in and relating to the production of crystals, and apparatus for use therein

Info

Publication number
GB939102A
GB939102A GB577260A GB577260A GB939102A GB 939102 A GB939102 A GB 939102A GB 577260 A GB577260 A GB 577260A GB 577260 A GB577260 A GB 577260A GB 939102 A GB939102 A GB 939102A
Authority
GB
United Kingdom
Prior art keywords
melt
crucible
crystal
annular partition
pict
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB577260A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB939102A publication Critical patent/GB939102A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0939102/III/1> <PICT:0939102/III/2> In pulling a single crystal C (Fig. 1) from molten material, e.g. silicon or germanium, within a rotating crucible 10, the zone from which the crystal is pulled is surrounded by a stationary annular partition 16 of quartz having notches 35 (Fig. 2) providing a passage for the melt from the annular space between the crucible and the annular partition to the interior of the annular partition, and the melt is replaced by lowering one or more rods B of material into the melt in the said annular space. The crucible 10 is of graphite having a quartz lining 30 of inverted frusto-conical shape and is contained in a gas tight tube 13 which is surrounded by an induction heating coil 27 and has a closure member 14 provided with cooling passages 26. The crystal C may be rotated on withdrawal.
GB577260A 1959-02-18 1960-02-18 Improvements in and relating to the production of crystals, and apparatus for use therein Expired GB939102A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79418359A 1959-02-18 1959-02-18

Publications (1)

Publication Number Publication Date
GB939102A true GB939102A (en) 1963-10-09

Family

ID=25161934

Family Applications (1)

Application Number Title Priority Date Filing Date
GB577260A Expired GB939102A (en) 1959-02-18 1960-02-18 Improvements in and relating to the production of crystals, and apparatus for use therein

Country Status (1)

Country Link
GB (1) GB939102A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4203951A (en) * 1976-11-23 1980-05-20 Eidelman Lev G Apparatus for growing single crystals from melt with additional feeding of comminuted charge
EP0069821A1 (en) * 1981-07-10 1983-01-19 Westinghouse Electric Corporation Apparatus for growing a dendritic web
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
EP0170856A1 (en) * 1984-07-06 1986-02-12 General Signal Corporation Process for growing monocrystals of semiconductor materials from shallow crucibles by Czochralski technique
EP0219776A1 (en) * 1985-10-12 1987-04-29 Sumitomo Electric Industries Limited Crucible recovering method and apparatus therefor
EP0293865A1 (en) * 1987-06-01 1988-12-07 Mitsubishi Materials Corporation Apparatus and process for growing crystals of semiconductor materials
US4911895A (en) * 1987-06-08 1990-03-27 Mitsubishi Kinzoku Kabushiki Kaisha Apparatus for growing crystals of semiconductor materials
EP0364899A1 (en) * 1988-10-13 1990-04-25 Mitsubishi Materials Corporation Apparatus and process for growing crystals of semiconductor materials
EP0400266A1 (en) * 1989-05-30 1990-12-05 Nkk Corporation Apparatus for manufacturing single silicon crystal

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4203951A (en) * 1976-11-23 1980-05-20 Eidelman Lev G Apparatus for growing single crystals from melt with additional feeding of comminuted charge
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
EP0069821A1 (en) * 1981-07-10 1983-01-19 Westinghouse Electric Corporation Apparatus for growing a dendritic web
EP0170856A1 (en) * 1984-07-06 1986-02-12 General Signal Corporation Process for growing monocrystals of semiconductor materials from shallow crucibles by Czochralski technique
EP0219776A1 (en) * 1985-10-12 1987-04-29 Sumitomo Electric Industries Limited Crucible recovering method and apparatus therefor
EP0293865A1 (en) * 1987-06-01 1988-12-07 Mitsubishi Materials Corporation Apparatus and process for growing crystals of semiconductor materials
US4936949A (en) * 1987-06-01 1990-06-26 Mitsubishi Kinzoku Kabushiki Kaisha Czochraski process for growing crystals using double wall crucible
US4911895A (en) * 1987-06-08 1990-03-27 Mitsubishi Kinzoku Kabushiki Kaisha Apparatus for growing crystals of semiconductor materials
EP0364899A1 (en) * 1988-10-13 1990-04-25 Mitsubishi Materials Corporation Apparatus and process for growing crystals of semiconductor materials
US5196173A (en) * 1988-10-13 1993-03-23 Mitsubishi Materials Corporation Apparatus for process for growing crystals of semiconductor materials
EP0400266A1 (en) * 1989-05-30 1990-12-05 Nkk Corporation Apparatus for manufacturing single silicon crystal

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