GB827465A - Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon - Google Patents

Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon

Info

Publication number
GB827465A
GB827465A GB36646/57A GB3664657A GB827465A GB 827465 A GB827465 A GB 827465A GB 36646/57 A GB36646/57 A GB 36646/57A GB 3664657 A GB3664657 A GB 3664657A GB 827465 A GB827465 A GB 827465A
Authority
GB
United Kingdom
Prior art keywords
rod
pict
iii
temperature
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36646/57A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB827465A publication Critical patent/GB827465A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0827465/III/1> <PICT:0827465/III/2> <PICT:0827465/III/3> <PICT:0827465/III/4> <PICT:0827465/III/5> <PICT:0827465/III/6> In a method for growing a single crystal rod from a melt the loss of heat by radiation from the surface of that part of the already grown rod which is at a temperature exceeding the softening temperature of the substance is compensated by inward radiation from a heat radiating member surrounding the rod symmetrically, the temperature gradient along that part of the rod axis being constant. The softening temperature is the lowest temperature at which dislocations are still produced by thermal stresses inside the material. When a single crystal 1 (Fig. 1) is produced by passing a molten zone 4 down a rod of material, the zone 4 is produced by heating a graphite ring 2 by a high-frequency coil 3, and loss of heat from the single crystal part of the rod 1 is compensated by radiation from the flat surface 5 of the ring. The ring preferably has an outside diameter between 2 and 3 times the diameter of the rod, and temperature between 1.2 and 1.5 times the melting temperature of the rod. When rod 1 is grown from a melt 11 (Fig. 2) in a crucible 10, the ring 2 is floated on the melt, or the rod is grown from a crucible 15 (Fig. 3) floating in the melt 11 and connected thereto through an opening 17, heat being radiated by a flat rim 18 of the crucible 15. In other embodiments (Figs. 4, 5 and 6) the rings have conical radiating surfaces at an angle a of more than 30 degrees, preferably 40 to 50 degrees, to the axis of the rod. The material may be a semi-conductor, such as silicon or germanium. Specification 827,466 is referred to.
GB36646/57A 1956-11-28 1957-11-25 Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon Expired GB827465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL212549 1956-11-28

Publications (1)

Publication Number Publication Date
GB827465A true GB827465A (en) 1960-02-03

Family

ID=19750817

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36646/57A Expired GB827465A (en) 1956-11-28 1957-11-25 Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon

Country Status (7)

Country Link
US (1) US3002824A (en)
BE (1) BE562704A (en)
CH (1) CH397601A (en)
DE (2) DE1419207A1 (en)
FR (1) FR1196959A (en)
GB (1) GB827465A (en)
NL (1) NL104388C (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264214A (en) * 1960-05-02 1900-01-01
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
BE623518A (en) * 1961-10-13
DE1289519B (en) * 1962-11-19 1969-02-20 Siemens Ag Device for pulling a semiconductor crystal from a melt
DE1286510B (en) * 1962-11-23 1969-01-09 Siemens Ag Process for the production of band-shaped single crystals consisting of semiconductor material by pulling from a melt
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
DE1217926B (en) * 1963-08-17 1966-06-02 Siemens Ag Method for avoiding streaks in metal or semiconductor crystals
US3340016A (en) * 1963-09-26 1967-09-05 Consortium Elektrochem Ind Producing and regulating translatory movement in the manufacture of semiconductor bodies
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3527574A (en) * 1966-09-27 1970-09-08 Tyco Laboratories Inc Growth of sapphire filaments
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
US3690367A (en) * 1968-07-05 1972-09-12 Anadite Inc Apparatus for the restructuring of metals
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US4039283A (en) * 1973-04-18 1977-08-02 Siemens Aktiengesellschaft Apparatus for producing a controlled radial path of resistance in a semiconductor monocrystalline rod
DE2319700C3 (en) * 1973-04-18 1980-11-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for influencing the radial resistance curve in a semiconductor single crystal rod during crucible-free zone melting and devices for carrying out the process
US4032390A (en) * 1974-02-25 1977-06-28 Corning Glass Works Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
US4090851A (en) * 1976-10-15 1978-05-23 Rca Corporation Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
JPS6024078B2 (en) * 1977-09-05 1985-06-11 株式会社東芝 Manufacturing equipment for Group 3-5 compound semiconductor single crystals
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
US4299648A (en) * 1980-08-20 1981-11-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for drawing monocrystalline ribbon from a melt
JPS57179099A (en) * 1981-04-28 1982-11-04 Toshiba Corp Manufacturing apparatus for silicon single crystal
JP2529934B2 (en) * 1984-02-21 1996-09-04 住友電気工業株式会社 Single crystal manufacturing method
US4944925A (en) * 1985-06-10 1990-07-31 Sumitomo Electric Industries, Ltd. Apparatus for producing single crystals
JPS623096A (en) * 1985-06-27 1987-01-09 Res Dev Corp Of Japan Growth of compound semiconductor single crystal having high dissociation pressure
JPS6259594A (en) * 1985-09-11 1987-03-16 Sumitomo Electric Ind Ltd Pulling up method of crystal and apparatus therefor
JPS6287489A (en) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd Recovery of crucible and apparatus therefor
JPS6379790A (en) * 1986-09-22 1988-04-09 Toshiba Corp Crystal pulling up device
US4990179A (en) * 1990-04-23 1991-02-05 Fmc Corporation Process for increasing the life of carbon crucibles in plasma furnaces
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
IL128827A0 (en) * 1999-03-04 2000-01-31 Solmecs Israel Ltd Apparatus for growing single crystals

Family Cites Families (9)

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US2855355A (en) * 1945-11-28 1958-10-07 Leo A Ohlinger Jacketed uranium slug
BE510303A (en) * 1951-11-16
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
NL89230C (en) * 1952-12-17 1900-01-01
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
BE528916A (en) * 1953-05-18
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure

Also Published As

Publication number Publication date
US3002824A (en) 1961-10-03
NL104388C (en)
BE562704A (en)
CH397601A (en) 1965-08-31
FR1196959A (en) 1959-11-27
DE1272900B (en) 1968-07-18
DE1419207A1 (en) 1969-03-27

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