JPH01145391A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPH01145391A JPH01145391A JP30523887A JP30523887A JPH01145391A JP H01145391 A JPH01145391 A JP H01145391A JP 30523887 A JP30523887 A JP 30523887A JP 30523887 A JP30523887 A JP 30523887A JP H01145391 A JPH01145391 A JP H01145391A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- melt
- single crystal
- shielding member
- pulled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 239000000155 melt Substances 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 238000001953 recrystallisation Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、主として石英ルツボ内に保持されたシリコン
融液からシリコン単結晶を引上げる単結晶引上装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention mainly relates to a single crystal pulling apparatus for pulling a silicon single crystal from a silicon melt held in a quartz crucible.
従来、この種のシリコン単結晶引上装置としては、第３
図に示すように、炉本体１の内部に、シリコン融液２を
保持する石英ルツボ３が、黒鉛サセプタ４を介して昇降
自在かつ回転自在な下軸５に取付けられた状態で設置さ
れ、この石英ルツボ３及び黒鉛サセプタ４の周囲に、上
記石英ルツボ３内のシリコン融液２の温度を制御するヒ
ーター６が設けられ、かつこのヒーター６とか本体１と
の間に保温１１７が設置されると共に、上記炉本体１の
首部から下方に、水冷筒８が垂設されたものが知られて
いる（例えば、特開昭６１−６８３８９号公報参照）。Conventionally, as this type of silicon single crystal pulling apparatus, the third
As shown in the figure, a quartz crucible 3 holding a silicon melt 2 is installed inside a furnace body 1 and is attached to a lower shaft 5 that can be raised and lowered and rotated via a graphite susceptor 4. A heater 6 for controlling the temperature of the silicon melt 2 in the quartz crucible 3 is provided around the quartz crucible 3 and the graphite susceptor 4, and a heat insulator 117 is installed between the heater 6 and the main body 1. It is known that a water cooling cylinder 8 is vertically disposed downward from the neck of the furnace body 1 (for example, see Japanese Patent Laid-Open No. 61-68389).
そして、上記従来のシリコン単結晶引上装置にあっては
、上記石英ルツボ３内のシリコン融液２に、炉本体１の
内部上方から吊設した引上軸９の下端にチャック１０を
介して支持された種結晶１１を浸漬した後に、上記引上
軸９を回転させながら所定速度（例えばｌａｍ＋／−１
ｎ）で引上げることにより、単結晶１２を製造するよう
にしている。In the conventional silicon single crystal pulling apparatus, the silicon melt 2 in the quartz crucible 3 is attached to the lower end of a pulling shaft 9 suspended from above inside the furnace body 1 via a chuck 10. After the supported seed crystal 11 is immersed, the pulling shaft 9 is rotated at a predetermined speed (for example, lam +/-1
A single crystal 12 is produced by pulling the crystal in step n).
しかしながら、上記従来のシリコン単結晶引上装置を用
いて、シリコン単結晶を引上げ育成する場合には、引上
げ中の単結晶１２を冷却するための水冷筒８の下部が上
記石英ルツボ３あるいは石英ルツボ３内のシリコン融液
２に接近しているために、該石英ルツボ３あるいはシリ
コン融液２が冷却され、石英ルツボ３の内壁近傍からシ
リコン融液２が再結晶化し、単結晶１２の引上げが阻害
されるという問題があった。However, when pulling and growing a silicon single crystal using the conventional silicon single crystal pulling apparatus, the lower part of the water cooling cylinder 8 for cooling the single crystal 12 being pulled is the quartz crucible 3 or the quartz crucible. Since the quartz crucible 3 or the silicon melt 2 is close to the silicon melt 2 in the quartz crucible 3, the silicon melt 2 is recrystallized from near the inner wall of the quartz crucible 3, and the single crystal 12 is pulled up. There was a problem of being blocked.
本発明は、上記事情に鑑みてなされたもので、その目的
とするところは、ルツボ内壁近傍からの融液の再結晶化
を防止することがＣき、しかも引上中の単結晶を効果的
に冷却できて、円滑かつ迅速に単結晶を得ることができ
る単結品用−し装置を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to prevent the recrystallization of the melt from near the inner wall of the crucible, and to effectively remove the single crystal during pulling. The object of the present invention is to provide a device for single-crystalline products that can be cooled to a high temperature and can smoothly and quickly obtain single crystals.
上記目的を達成するために、本発明は、引上中の単結晶
の周囲に設けられた冷部手段に、該冷却手段とルツボあ
るいはルツボ内の融液との間を遮断するシールド部材を
設けたものである。In order to achieve the above object, the present invention provides a cooling section provided around a single crystal being pulled, with a shield member for blocking between the cooling section and the crucible or the melt in the crucible. It is something that
本発明の単結晶引上装置にあっては、シールド部材によ
って、冷却手段からルツボあるいはルツボ内の融液を熱
的に遮断し、ルツボ及び融液の温疫が低下するのを抑制
しで、ルツボ内壁近傍からの融液の再結晶化を防止する
。In the single crystal pulling apparatus of the present invention, the crucible or the melt in the crucible is thermally isolated from the cooling means by the shield member, and the temperature of the crucible and the melt is suppressed from decreasing, Prevents recrystallization of melt from near the inner wall of the crucible.
双手、第１図と第２図に基づいて本発明の詳細な説明す
る。なお、第１図と第２図中、第３図に示す上記従来例
と同様の構成の部分については同符号を付けて説明を省
略する。The present invention will be explained in detail with reference to FIGS. 1 and 2. In FIGS. 1 and 2, the same reference numerals are given to the parts having the same configurations as those of the conventional example shown in FIG. 3, and the explanation thereof will be omitted.
第１図は本発明の一実施例を示すもので、図中符号２０
は、上記水冷ｎ８のＦ部に石英等の断熱部材２１を介し
て昇降調整自在に設けられたモリブデン製のシールド部
材である。そして、このシールド部材２０は、石英ルツ
ボ３の内径より小径の円筒部２０ａと、この円筒部２０
ａの下端に続いて内方に先細りした傾斜筒部２０ｂとか
ら構成されている。また、上記水冷筒８の下部外周には
ねじ部８ａが形成され、このねじ部８ａに上記断熱部材
２１の内突起２１ａが係合されることにより、仁の断熱
部材２１及びシールド部１２０が上記水冷ｆ９Ｉ８に対
して回転しなから昇降するようになっている。FIG. 1 shows an embodiment of the present invention, and the reference numeral 20 in the figure shows an embodiment of the present invention.
is a shield member made of molybdenum that is provided in the F portion of the water-cooled n8 with a heat insulating member 21 such as quartz interposed therebetween so as to be adjustable up and down. This shield member 20 includes a cylindrical portion 20a having a smaller diameter than the inner diameter of the quartz crucible 3, and a cylindrical portion 20a having a smaller diameter than the inner diameter of the quartz crucible 3.
It is comprised of an inclined cylindrical part 20b that tapers inward following the lower end of a. Further, a threaded portion 8a is formed on the outer periphery of the lower part of the water cooling cylinder 8, and by engaging the inner protrusion 21a of the heat insulating member 21 with this threaded portion 8a, the inner heat insulating member 21 and the shield portion 120 are connected to each other. It moves up and down without rotating relative to the water-cooled f9I8.
また、上記シールド部材２０は、第２図に示すように、
上記炉本体１の分割ｑ能な１τチヤンバー１ａと中チャ
ンバー１ｂとの間にはさみ込まれた冷却手段２２の水冷
筒部２２ａに、断熱部材２１を介して昇降調整自在に設
けた構成でもよい。この場合、上記水冷筒部２２ａの外
周には、上記断熱部材２１の内突起２１ａに係合７るね
じ部２２ｂが形成されている。Further, the shield member 20, as shown in FIG.
A configuration may also be adopted in which the water-cooled cylinder portion 22a of the cooling means 22, which is sandwiched between the 1τ chamber 1a and the middle chamber 1b of the furnace main body 1, is provided so as to be adjustable up and down via the heat insulating member 21. In this case, a threaded portion 22b that engages with the inner protrusion 21a of the heat insulating member 21 is formed on the outer periphery of the water cooling cylinder portion 22a.
上記のように構成された単結晶引上装置にあっては、従
来同様、石英ルツボ３内のシリコン融液２に種結晶１１
を浸漬させた後に、この種結晶１１を回転させながら、
所定速度で引上げることにより、種結晶１１の一ト端に
順次単結晶１２が成長していく。In the single crystal pulling apparatus configured as described above, seed crystals 11 are placed in the silicon melt 2 in the quartz crucible 3, as in the conventional case.
After immersing the seed crystal 11, while rotating the seed crystal 11,
By pulling at a predetermined speed, a single crystal 12 is successively grown at one end of the seed crystal 11.
この場合、シリコン融液２の表面中央部、すなわち引上
げられる単結晶１２との界面をシリコンの融点に保持す
ると、水冷筒８の作用により、第３図に示す従来例にお
いては、水冷筒８のＦＩＢに面した石英ルツボ３、ある
いはシリコン融液２が冷却され、ルツボ内壁近傍からシ
リコン融液２が再結晶化して引上げが困難になるが、第
１図及び第２図に示す本実施例にあっては、シールド部
材２０によって、水冷筒８あるいは水冷筒部２２ａと、
石英ルツボ３あるいはシリコン融液２とが互いに′ａ断
され、シリコン融液２の再結晶化が防１される。In this case, if the central part of the surface of the silicon melt 2, that is, the interface with the single crystal 12 to be pulled, is maintained at the melting point of silicon, the effect of the water cooling cylinder 8 will cause the water cooling cylinder 8 to The quartz crucible 3 facing the FIB or the silicon melt 2 is cooled, and the silicon melt 2 recrystallizes from near the inner wall of the crucible, making it difficult to pull it up. If so, the shield member 20 may connect the water cooling cylinder 8 or the water cooling cylinder part 22a,
The quartz crucible 3 or the silicon melt 2 are disconnected from each other, and recrystallization of the silicon melt 2 is prevented.
例えば、本発明による単結晶引上装置及び従来の装置を
それぞれ用いて、各々１０バツチずつの引上げ育成を行
なったところ、従来の装置では、８バツチにつき再結晶
化が起こり、引上げが困難になったのに対して、本発明
による単結晶引上装置では再結晶化が生じなかった。For example, when pulling and growing 10 batches each using the single crystal pulling apparatus according to the present invention and the conventional apparatus, recrystallization occurred in 8 batches using the conventional apparatus, making pulling difficult. On the other hand, no recrystallization occurred in the single crystal pulling apparatus according to the present invention.
また、本発明による中結晶引上装置にあっては、表１に
示すように、引上中の単結晶１２が８５０〜１０５０℃
の温度帯域を通過するのに要する滞留時間を抑制すべく
水冷筒８、水冷筒部２２ａを設定することで、引上げ育
成されたシリコン単結晶中の積層欠陥（８３Ｆ）の発生
を著しく少なくできた。Further, in the medium crystal pulling apparatus according to the present invention, as shown in Table 1, the temperature of the single crystal 12 during pulling is 850 to 1050°C.
By setting the water cooling cylinder 8 and the water cooling cylinder part 22a to suppress the residence time required to pass through the temperature range, the occurrence of stacking faults (83F) in the pulled and grown silicon single crystal was significantly reduced. .
この表においては、引上げ育成されたシリコン単結晶か
ら採取した試料について、２℃／ｍｉｎで１１００℃ま
で昇温した後、１時間保持の加熱処理を施した状態で積
層欠陥の密度を測定している。In this table, the density of stacking faults was measured for samples taken from pulled-grown silicon single crystals after heating them to 1100°C at a rate of 2°C/min and then holding them for 1 hour. There is.
表 １
なお、本発明は、上記実施例に限定されず、種種の形状
のシールド部材２０の採用が可能である。Table 1 Note that the present invention is not limited to the above embodiments, and shield members 20 of various shapes can be employed.
また、水冷筒８、水冷筒部２２ａに水以外の冷却剤を流
通させることら有効である。It is also effective because it allows a coolant other than water to flow through the water cooling tube 8 and the water cooling tube portion 22a.
以上説明したように、本発明は、引上中の単結晶の周囲
に設けられた冷却手段に、該冷却手段とルツボあるいは
ルツボ内の融液との間を遮断するシールド部材を設けた
ものであるから、シールド部材によって、冷却手段から
ルツボあるいはルツボ内の融液を熱的に遮断して、ツル
ボ及び融液の温度が低下するのを抑制することにより、
ルツボ内壁近傍からの融液の再結晶化を防止できると共
に、引上中の単結晶を効果的に冷却できて、円滑にかつ
迅速に単結晶を得ることができる上に、半導体デバイス
製造工程における高温処理によっても積層欠陥の発生が
著しく少ないウェーハを＠造できる。As explained above, in the present invention, the cooling means provided around the single crystal being pulled is provided with a shield member that isolates between the cooling means and the crucible or the melt in the crucible. Therefore, by thermally blocking the crucible or the melt in the crucible from the cooling means by the shield member, and suppressing the temperature of the crucible and the melt from decreasing,
Not only can recrystallization of the melt from near the inner wall of the crucible be prevented, but also the single crystal being pulled can be effectively cooled, making it possible to obtain a single crystal smoothly and quickly. Wafers with significantly fewer stacking faults can be produced even through high-temperature processing.
第１図は本発明の一実施例を示す概略構成図、第２図は
本発明の他の実施例を示す概略構成図、第３図は従来の
単結晶用Ｊ：装置を示ず概略構成図である。
２・・・・・・シリコン融液、
３・・・・・・石英ルツボ、
８・・・・・・水冷筒（冷却手段）、
１２・・・・・・単結晶、
２０・・・・・・シールド部材、
２２・・・・・・冷却手段。FIG. 1 is a schematic configuration diagram showing one embodiment of the present invention, FIG. 2 is a schematic configuration diagram showing another embodiment of the present invention, and FIG. 3 is a schematic configuration diagram of a conventional single crystal J: apparatus not shown. It is a diagram. 2...Silicon melt, 3...Quartz crucible, 8...Water cooling tube (cooling means), 12...Single crystal, 20... ...Shield member, 22...Cooling means.
Claims (1)
周囲に冷却手段が設けられてなる単結晶引上装置におい
て、上記冷却手段に、該冷却手段と上記ルツボあるいは
該ルツボ内の融液との間を遮断するシールド部材が設け
られたことを特徴とする単結晶引上装置。In a single crystal pulling apparatus comprising a cooling means provided around a single crystal pulled from a melt held in a crucible, the cooling means is provided with a cooling means and the crucible or the melt in the crucible. A single-crystal pulling device characterized by being provided with a shield member that blocks the gap between the crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62305238A JPH07115984B2 (en) | 1987-12-02 | 1987-12-02 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62305238A JPH07115984B2 (en) | 1987-12-02 | 1987-12-02 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01145391A true JPH01145391A (en) | 1989-06-07 |
| JPH07115984B2 JPH07115984B2 (en) | 1995-12-13 |
Family
ID=17942694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62305238A Expired - Lifetime JPH07115984B2 (en) | 1987-12-02 | 1987-12-02 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07115984B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000462A1 (en) * | 1991-06-24 | 1993-01-07 | Komatsu Electronic Metals Co., Ltd. | Device for pulling up single crystal |
| WO2001057293A1 (en) * | 2000-01-31 | 2001-08-09 | Shin-Etsu Handotai Co., Ltd. | Single crystal growing device and production method of single crystal using the device and single crystal |
| US6579362B2 (en) | 2001-03-23 | 2003-06-17 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
| US6846539B2 (en) | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350391A (en) * | 1986-08-18 | 1988-03-03 | Sony Corp | Single crystal growth device |
-
1987
- 1987-12-02 JP JP62305238A patent/JPH07115984B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350391A (en) * | 1986-08-18 | 1988-03-03 | Sony Corp | Single crystal growth device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993000462A1 (en) * | 1991-06-24 | 1993-01-07 | Komatsu Electronic Metals Co., Ltd. | Device for pulling up single crystal |
| WO2001057293A1 (en) * | 2000-01-31 | 2001-08-09 | Shin-Etsu Handotai Co., Ltd. | Single crystal growing device and production method of single crystal using the device and single crystal |
| US6632280B2 (en) | 2000-01-31 | 2003-10-14 | Shin-Etsu Handotai Co., Ltd. | Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal |
| KR100786878B1 (en) * | 2000-01-31 | 2007-12-20 | 신에쯔 한도타이 가부시키가이샤 | Single crystal growing device and production method of single crystal using the device and single crystal |
| US6846539B2 (en) | 2001-01-26 | 2005-01-25 | Memc Electronic Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| US7217320B2 (en) | 2001-01-26 | 2007-05-15 | Memc Electronics Materials, Inc. | Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| US6579362B2 (en) | 2001-03-23 | 2003-06-17 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07115984B2 (en) | 1995-12-13 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| EXPY | Cancellation because of completion of term |