GB915732A - Zone refining apparatus - Google Patents
Zone refining apparatusInfo
- Publication number
- GB915732A GB915732A GB14353/60A GB1435360A GB915732A GB 915732 A GB915732 A GB 915732A GB 14353/60 A GB14353/60 A GB 14353/60A GB 1435360 A GB1435360 A GB 1435360A GB 915732 A GB915732 A GB 915732A
- Authority
- GB
- United Kingdom
- Prior art keywords
- boat
- melted
- seed crystal
- pict
- iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- D—TEXTILES; PAPER
- D02—YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
- D02G—CRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
- D02G1/00—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics
- D02G1/02—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist
- D02G1/0206—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist by false-twisting
- D02G1/0266—Producing crimped or curled fibres, filaments, yarns, or threads, giving them latent characteristics by twisting, fixing the twist and backtwisting, i.e. by imparting false twist by false-twisting false-twisting machines
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Textile Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0915732/III/1> <PICT:0915732/III/2> <PICT:0915732/III/3> Zone melting apparatus comprises means for moving an elongated body of material slowly past a plurality of heat sources whereby portions of the material are melted by each source in turn and allowed to solidify in passing between adjacent heat sources, and includes means to permit the portions of the body of material to be melted but to prevent a seed crystal at one end of the body from being melted. In one embodiment a boat 3 (Fig. 1) containing material 7d, e.g. germanium, is slowly pulled by a rod 8 through a tube 1 around which are inductive heating coils 6a, 6b and 6c which produce molten zones 7a, 7b and 7c which pass along the material in boat 3. The boat 3 has an inductive coupling shell 2 (see also Fig. 2), e.g. of graphite, which enables the coils to heat the material and so form the molten zones. One end of the boat contains a seed crystal 7g in contact with the material, and the shell 2 stops short of this end of the boat so that the seed crystal is not melted. In another embodiment (Fig. 3) a tube 8 (e.g. of quartz) containing a boat 9 in which is placed material 1A, is moved relatively to sources of radiant heat 4A, 4B and 4C, so that molten zones 1Da, 1Db and 1Dc are formed and pass along the material. Tube 8 has a shield 5, e.g. of aluminium foil, which prevents a seed crystal 1C from being melted.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US809957A US3020132A (en) | 1959-04-30 | 1959-04-30 | Single crystal refining |
Publications (1)
Publication Number | Publication Date |
---|---|
GB915732A true GB915732A (en) | 1963-01-16 |
Family
ID=25202590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB14353/60A Expired GB915732A (en) | 1959-04-30 | 1960-04-25 | Zone refining apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US3020132A (en) |
DE (2) | DE1243145B (en) |
GB (1) | GB915732A (en) |
NL (2) | NL112210C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828445A (en) * | 1982-06-14 | 1989-05-09 | Giannuzzi Louis | Single-piece pre-shaped wall anchor |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3250842A (en) * | 1963-01-15 | 1966-05-10 | Atomic Energy Commission | Electron beam zone refining |
DE1644006A1 (en) * | 1967-04-29 | 1970-04-02 | Siemens Ag | Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod |
US3485613A (en) * | 1967-11-06 | 1969-12-23 | Corning Glass Works | Method of producing a vitreous body by crucibleless fluid zone treatment |
USRE28635E (en) * | 1970-08-24 | 1975-12-02 | Pyropolymeric semiconducting organic-refractory oxide material | |
US3651386A (en) * | 1970-08-24 | 1972-03-21 | Universal Oil Prod Co | Pyropolymeric semiconducting organic-refractory oxide material |
JPS535867B2 (en) * | 1973-03-08 | 1978-03-02 | ||
US3926566A (en) * | 1973-05-18 | 1975-12-16 | Bicron Corp | Processing alkali metal halide salts for growing into crystals in accordance with stockbarger process |
US3884642A (en) * | 1973-07-23 | 1975-05-20 | Applied Materials Inc | Radiantly heated crystal growing furnace |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE510303A (en) * | 1951-11-16 | |||
NL89230C (en) * | 1952-12-17 | 1900-01-01 | ||
AT194444B (en) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Method and device for treating an elongated semiconductor crystal arrangement |
-
0
- NL NL250835D patent/NL250835A/xx unknown
- NL NL112210D patent/NL112210C/xx active
-
1959
- 1959-04-30 US US809957A patent/US3020132A/en not_active Expired - Lifetime
-
1960
- 1960-04-25 GB GB14353/60A patent/GB915732A/en not_active Expired
- 1960-04-30 DE DEJ22966A patent/DE1243145B/en active Pending
- 1960-04-30 DE DEJ18050A patent/DE1150357B/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828445A (en) * | 1982-06-14 | 1989-05-09 | Giannuzzi Louis | Single-piece pre-shaped wall anchor |
US4963062A (en) * | 1982-06-14 | 1990-10-16 | Giannuzzi Louis | Single-piece, pre-shaped anchor |
Also Published As
Publication number | Publication date |
---|---|
DE1150357B (en) | 1963-06-20 |
DE1243145B (en) | 1967-06-29 |
US3020132A (en) | 1962-02-06 |
NL112210C (en) | |
NL250835A (en) |
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