GB1097806A - Method and apparatus for crucible-free zone melting - Google Patents

Method and apparatus for crucible-free zone melting

Info

Publication number
GB1097806A
GB1097806A GB26086/66A GB2608666A GB1097806A GB 1097806 A GB1097806 A GB 1097806A GB 26086/66 A GB26086/66 A GB 26086/66A GB 2608666 A GB2608666 A GB 2608666A GB 1097806 A GB1097806 A GB 1097806A
Authority
GB
United Kingdom
Prior art keywords
supply
rod
recrystallized
employed
rods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB26086/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1097806A publication Critical patent/GB1097806A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

In the floating zone-melting of a silicon rod, the supply and recrystallized rods are arranged at an angle to one another (acute, obtuse or right-angle). Both rod holders are rotatable and axially displaceable. The diameter of the recrystallized rod may be greater or smaller than that of the supply rod. Heating may be by induction coil, electrically heated radiation body, electron gun, or electric arc. A planar or conical induction coil may be placed adjacent to the outer surface of the "elbow" joining supply and recrystallized rods. An auxiliary induction coil may be employed to assist support of the molten zone. Pre- and afterheating devices may also be employed. A plurality of supply rods may be employed, one or more of which may be doped, e.g. with antimony.
GB26086/66A 1965-06-10 1966-06-10 Method and apparatus for crucible-free zone melting Expired GB1097806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97543A DE1264399B (en) 1965-06-10 1965-06-10 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1097806A true GB1097806A (en) 1968-01-03

Family

ID=7520818

Family Applications (1)

Application Number Title Priority Date Filing Date
GB26086/66A Expired GB1097806A (en) 1965-06-10 1966-06-10 Method and apparatus for crucible-free zone melting

Country Status (5)

Country Link
US (1) US3660044A (en)
BE (1) BE682232A (en)
CH (1) CH438229A (en)
DE (1) DE1264399B (en)
GB (1) GB1097806A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3520067A1 (en) * 1985-06-04 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Method for producing strip-shaped silicon crystals employing a horizontal pulling direction
US5057487A (en) * 1987-10-29 1991-10-15 Texas Instruments Incorporated Crystal growth method for Y-Ba-Cu-O compounds

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
DE1002741B (en) * 1955-05-28 1957-02-21 Siemens Ag Process for the production in the melting process and / or for remelting an inorganic stoechiometric compound in crystalline form
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
NL237834A (en) * 1958-04-09
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
NL113496C (en) * 1959-06-12
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1208739B (en) * 1963-12-17 1966-01-13 Ibm Deutschland Process for pulling single crystal silicon carbide

Also Published As

Publication number Publication date
DE1264399B (en) 1968-03-28
CH438229A (en) 1967-06-30
BE682232A (en) 1966-12-08
US3660044A (en) 1972-05-02

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