GB848382A - Improvements in or relating to the production of mono-crystalline bodies - Google Patents
Improvements in or relating to the production of mono-crystalline bodiesInfo
- Publication number
- GB848382A GB848382A GB38099/58A GB3809958A GB848382A GB 848382 A GB848382 A GB 848382A GB 38099/58 A GB38099/58 A GB 38099/58A GB 3809958 A GB3809958 A GB 3809958A GB 848382 A GB848382 A GB 848382A
- Authority
- GB
- United Kingdom
- Prior art keywords
- seed
- iii
- crystalline
- etched
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A mono-crystalline seed on which is to be grown a mono-crystalline rod in a particular orientation, is aligned by grinding an end face of the seed perpendicular to its longitudinal axis, the longitudinal axis being directed at an angle not greater than 30 degrees with respect to the (III) axis of the seed, etching the <PICT:0848382/III/1> <PICT:0848382/III/2> <PICT:0848382/III/3> ground face to expose one or more crystalline faces having the (III) orientation, directing a narrow beam of light on to the etched face while rotating the seed and adjusting the position of the seed so that on rotation the reflected light beam remains stationary. A seed crystal 5 (Figs. 1 and 2), such as silicon, is ground and etched with caustic alkali and light from a source 2 is reflected by the etched surface and received by a photo-electric cell 4. The seed crystal 15 (Fig. 3) is mounted in a rotatable sleeve 13 which swivels in a carriage 12 mounted in a slot 11 of a plate 10 rotatable about an axis A. Sleeve 13 and carriage 12 are adjusted so that when light is projected in the direction of the axis A on to the etched face of the seed and plate 10 is rotated, the incident and reflected light rays coincide. A monocrystal 16 is then grown on the seed 15 by grafting it on the end of a poly-crystalline rod, and zone-melting the rod, or by withdrawing the seed from a melt.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE848382X | 1957-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB848382A true GB848382A (en) | 1960-09-14 |
Family
ID=6775565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38099/58A Expired GB848382A (en) | 1957-11-28 | 1958-11-26 | Improvements in or relating to the production of mono-crystalline bodies |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB848382A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
| US3655345A (en) * | 1967-03-09 | 1972-04-11 | Siemens Ag | Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting |
| US3660044A (en) * | 1965-06-10 | 1972-05-02 | Siemens Ag | Apparatus for crucible-free zone melting of crystalline rods |
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3996096A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Method for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE30863E (en) * | 1973-11-22 | 1982-02-09 | Siemens Aktiengesellschaft | Method for crucible-free zone meeting of semiconductor crystal rods |
-
1958
- 1958-11-26 GB GB38099/58A patent/GB848382A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660044A (en) * | 1965-06-10 | 1972-05-02 | Siemens Ag | Apparatus for crucible-free zone melting of crystalline rods |
| US3655345A (en) * | 1967-03-09 | 1972-04-11 | Siemens Ag | Method of growing rod-shaped dislocation-free monocrystals, particularly of silicon, by crucible-free floating zone melting |
| US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3996096A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Method for crucible-free zone melting of semiconductor crystal rods |
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| USRE30863E (en) * | 1973-11-22 | 1982-02-09 | Siemens Aktiengesellschaft | Method for crucible-free zone meeting of semiconductor crystal rods |
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