GB1181486A - A Method of Converting a Starting Rod into a Rod that is substantially Dislocation-Free. - Google Patents

A Method of Converting a Starting Rod into a Rod that is substantially Dislocation-Free.

Info

Publication number
GB1181486A
GB1181486A GB01568/68A GB1156868A GB1181486A GB 1181486 A GB1181486 A GB 1181486A GB 01568/68 A GB01568/68 A GB 01568/68A GB 1156868 A GB1156868 A GB 1156868A GB 1181486 A GB1181486 A GB 1181486A
Authority
GB
United Kingdom
Prior art keywords
rod
seed
zone
light pattern
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB01568/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1181486A publication Critical patent/GB1181486A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,181,486. Zone-melting. SIEMENS A.G. 8 March, 1968 [9 March, 1967], No. 11568/ 68. Heading B1S. A dislocation-free monocrystalline rod of silicon is produced by passing a molten zone through a polycrystalline charge rod from a rotating seed, the (111)-axis of which is inclined at an angle 8 of 0.5-5‹ to its axis of rotation and causing a constriction in the charge rod near the seed. The monocrystalline rod may have a diameter or 30 mm or more. The seed is inclined at the required angle by passing a beam of light through an aperture in a disc 6 mounted in place of the rod to be zone-melted and reflecting the beam from the end surface of the seed (which is etched) onto the disc to form a light pattern 10. When the seed projects downwards, the light pattern is rotated to the position shown in Fig. 2. When the seed crystal projects upwards the light pattern is rotated to the position shown in Fig. 3.
GB01568/68A 1967-03-09 1968-03-08 A Method of Converting a Starting Rod into a Rod that is substantially Dislocation-Free. Expired GB1181486A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0108715 DE1619994B2 (en) 1967-03-09 1967-03-09 PROCESS FOR GROWING A ROD-SHAPED, DISPLACEMENT-FREE SINGLE CRYSTAL OF SILICON BY CRUCIBLE-FREE ZONE MELTING

Publications (1)

Publication Number Publication Date
GB1181486A true GB1181486A (en) 1970-02-18

Family

ID=7528987

Family Applications (1)

Application Number Title Priority Date Filing Date
GB01568/68A Expired GB1181486A (en) 1967-03-09 1968-03-08 A Method of Converting a Starting Rod into a Rod that is substantially Dislocation-Free.

Country Status (7)

Country Link
US (1) US3655345A (en)
JP (1) JPS4817401B1 (en)
DE (1) DE1619994B2 (en)
DK (1) DK116200B (en)
FR (1) FR1568164A (en)
GB (1) GB1181486A (en)
NL (1) NL6801348A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2827050C2 (en) * 1978-06-20 1986-09-11 Siemens AG, 1000 Berlin und 8000 München Process for the production of [111] -oriented silicon single crystal rods with jacket surfaces that are as straight as possible by crucible-free zone melting
JP3223873B2 (en) * 1997-12-24 2001-10-29 住友金属工業株式会社 Silicon wafer and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
NL243511A (en) * 1959-09-18
NL6411697A (en) * 1963-10-15 1965-04-20

Also Published As

Publication number Publication date
DK116200B (en) 1969-12-22
DE1619994A1 (en) 1970-03-26
DE1619994B2 (en) 1976-07-15
FR1568164A (en) 1969-05-23
NL6801348A (en) 1968-09-10
US3655345A (en) 1972-04-11
JPS4817401B1 (en) 1973-05-29

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