GB1374056A - Production of monocrystalline semiconductor rods - Google Patents

Production of monocrystalline semiconductor rods

Info

Publication number
GB1374056A
GB1374056A GB1847173A GB1847173A GB1374056A GB 1374056 A GB1374056 A GB 1374056A GB 1847173 A GB1847173 A GB 1847173A GB 1847173 A GB1847173 A GB 1847173A GB 1374056 A GB1374056 A GB 1374056A
Authority
GB
United Kingdom
Prior art keywords
rod
seed crystal
diameter
zone
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1847173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1374056A publication Critical patent/GB1374056A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1374056 Non-crucible zone melting SIEMENS AG 17 April 1973 [16 Aug 1972] 18471/73 Heading B1S A monocrystalline semiconductor rod having a specific resistance less at its centre than its periphery is made by the non-crucible zonemelting of a starting semiconductor rod from a seed crystal located at its lower end by (i) rotating the seed crystal at a speed dependent on the diameter of the monocrystalline rod to be produced and greater than that normally used in the production of such a rod, or (ii) cooling a part of the starting rod located adjacent to and above the molten zone or (iii) using steps (i) and (ii) concurrently. As shown in the figure, the original rod 1, is cooled above the molten zone 3 by a cooling coil 5 filled with water. The zone is produced by a flat coil 4, and the recrystallized rod 2 is drawn from a seed crystal (not shown). The rod 2 and the seed crystal are rotated about their axis as shown at 7, e.g. for a rod of diameter 20 m,m at a rotational speed of 100r.p.m. and for a rod of diameter 40mm at a speed of 15 r.p.m.
GB1847173A 1972-08-16 1973-04-17 Production of monocrystalline semiconductor rods Expired GB1374056A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240301 DE2240301A1 (en) 1972-08-16 1972-08-16 PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL BARS WITH SPECIFIC RESISTANCE DROPPING DOWN TO THE CENTER OF THE BAR

Publications (1)

Publication Number Publication Date
GB1374056A true GB1374056A (en) 1974-11-13

Family

ID=5853716

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1847173A Expired GB1374056A (en) 1972-08-16 1973-04-17 Production of monocrystalline semiconductor rods

Country Status (7)

Country Link
JP (2) JPS4947075A (en)
BE (1) BE803673A (en)
DE (1) DE2240301A1 (en)
FR (1) FR2196198B1 (en)
GB (1) GB1374056A (en)
IT (1) IT993701B (en)
NL (1) NL7305059A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56149971U (en) * 1980-04-10 1981-11-11
JPS57100999A (en) * 1980-12-15 1982-06-23 Hitachi Chem Co Ltd Heat treatment of single crystal of tungstic acid compound
DE3277983D1 (en) * 1981-03-02 1988-02-18 Ici Plc Method of and apparatus for monitoring gaseous pollutants

Also Published As

Publication number Publication date
FR2196198A1 (en) 1974-03-15
JPS4947075A (en) 1974-05-07
NL7305059A (en) 1974-02-19
JPS53118462U (en) 1978-09-20
BE803673A (en) 1973-12-17
IT993701B (en) 1975-09-30
FR2196198B1 (en) 1977-02-25
DE2240301A1 (en) 1974-02-28

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee