IT993701B - PROCEDURE FOR MANUFACTURING MONOCRYSTALLINE BAC CHETTE OF SEMICONDUCTOR MATERIAL WITH SPECIFIC RESISTANCE DECREASING TOWARD THE MIDDLE OF THE WAND - Google Patents

PROCEDURE FOR MANUFACTURING MONOCRYSTALLINE BAC CHETTE OF SEMICONDUCTOR MATERIAL WITH SPECIFIC RESISTANCE DECREASING TOWARD THE MIDDLE OF THE WAND

Info

Publication number
IT993701B
IT993701B IT2766373A IT2766373A IT993701B IT 993701 B IT993701 B IT 993701B IT 2766373 A IT2766373 A IT 2766373A IT 2766373 A IT2766373 A IT 2766373A IT 993701 B IT993701 B IT 993701B
Authority
IT
Italy
Prior art keywords
chette
wand
bac
procedure
semiconductor material
Prior art date
Application number
IT2766373A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT993701B publication Critical patent/IT993701B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT2766373A 1972-08-16 1973-08-08 PROCEDURE FOR MANUFACTURING MONOCRYSTALLINE BAC CHETTE OF SEMICONDUCTOR MATERIAL WITH SPECIFIC RESISTANCE DECREASING TOWARD THE MIDDLE OF THE WAND IT993701B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240301 DE2240301A1 (en) 1972-08-16 1972-08-16 PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL BARS WITH SPECIFIC RESISTANCE DROPPING DOWN TO THE CENTER OF THE BAR

Publications (1)

Publication Number Publication Date
IT993701B true IT993701B (en) 1975-09-30

Family

ID=5853716

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2766373A IT993701B (en) 1972-08-16 1973-08-08 PROCEDURE FOR MANUFACTURING MONOCRYSTALLINE BAC CHETTE OF SEMICONDUCTOR MATERIAL WITH SPECIFIC RESISTANCE DECREASING TOWARD THE MIDDLE OF THE WAND

Country Status (7)

Country Link
JP (2) JPS4947075A (en)
BE (1) BE803673A (en)
DE (1) DE2240301A1 (en)
FR (1) FR2196198B1 (en)
GB (1) GB1374056A (en)
IT (1) IT993701B (en)
NL (1) NL7305059A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56149971U (en) * 1980-04-10 1981-11-11
JPS57100999A (en) * 1980-12-15 1982-06-23 Hitachi Chem Co Ltd Heat treatment of single crystal of tungstic acid compound
DE3277983D1 (en) * 1981-03-02 1988-02-18 Ici Plc Method of and apparatus for monitoring gaseous pollutants

Also Published As

Publication number Publication date
NL7305059A (en) 1974-02-19
JPS4947075A (en) 1974-05-07
FR2196198A1 (en) 1974-03-15
JPS53118462U (en) 1978-09-20
DE2240301A1 (en) 1974-02-28
FR2196198B1 (en) 1977-02-25
BE803673A (en) 1973-12-17
GB1374056A (en) 1974-11-13

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