JPS57100999A - Heat treatment of single crystal of tungstic acid compound - Google Patents

Heat treatment of single crystal of tungstic acid compound

Info

Publication number
JPS57100999A
JPS57100999A JP55175807A JP17580780A JPS57100999A JP S57100999 A JPS57100999 A JP S57100999A JP 55175807 A JP55175807 A JP 55175807A JP 17580780 A JP17580780 A JP 17580780A JP S57100999 A JPS57100999 A JP S57100999A
Authority
JP
Japan
Prior art keywords
single crystal
acid compound
tungstic acid
crystal
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55175807A
Other languages
Japanese (ja)
Other versions
JPS646160B2 (en
Inventor
Kazumasa Takagi
Tokumi Fukazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP55175807A priority Critical patent/JPS57100999A/en
Priority to DE3148988A priority patent/DE3148988C2/en
Priority to GB8137633A priority patent/GB2089777B/en
Publication of JPS57100999A publication Critical patent/JPS57100999A/en
Publication of JPS646160B2 publication Critical patent/JPS646160B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C01G41/006—Compounds containing, besides tungsten, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C01P2006/33—Phase transition temperatures
    • C01P2006/34—Melting temperatures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)

Abstract

PURPOSE: To obtain a material for a scintillator having high fluorescent intensity, by heat-treating a single crystal of a tungstic acid compound in an oxygen- containing atmosphere at a temperature within a specific range.
CONSTITUTION: The single crystal of a tungstic acid compound of formula (M is Mg, Zn and/or Cd) is heated in a mixed gas atmosphere composed of oxygen (10W100vol%) and an inert gas (e.g. nitrogen gas) at a temp. between the (m.p. -200°C) and m.p.,[pref. between (m.p. -200°C) and (m.p. -30°C)]. Oxygen atoms diffuse from the surface of the crystal into the crystal by this heat treatment, and eliminate the oxygen vacancies produced during the crystal growing process. Consequently, the absorption of the fluorescence (wavelength of max. intensity: 480nm) can be eliminated, and the fluorescent intensity of the single crystal can be improved.
COPYRIGHT: (C)1982,JPO&Japio
JP55175807A 1980-12-15 1980-12-15 Heat treatment of single crystal of tungstic acid compound Granted JPS57100999A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55175807A JPS57100999A (en) 1980-12-15 1980-12-15 Heat treatment of single crystal of tungstic acid compound
DE3148988A DE3148988C2 (en) 1980-12-15 1981-12-10 Process for the heat treatment of a tungstate single crystal
GB8137633A GB2089777B (en) 1980-12-15 1981-12-14 Process for heat-treating single crystal of tungstate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175807A JPS57100999A (en) 1980-12-15 1980-12-15 Heat treatment of single crystal of tungstic acid compound

Publications (2)

Publication Number Publication Date
JPS57100999A true JPS57100999A (en) 1982-06-23
JPS646160B2 JPS646160B2 (en) 1989-02-02

Family

ID=16002574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175807A Granted JPS57100999A (en) 1980-12-15 1980-12-15 Heat treatment of single crystal of tungstic acid compound

Country Status (3)

Country Link
JP (1) JPS57100999A (en)
DE (1) DE3148988C2 (en)
GB (1) GB2089777B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141087A (en) * 1982-12-29 1984-08-13 ゼネラル・エレクトリック・カンパニイ Solid detector module
JP2003041244A (en) * 2001-07-25 2003-02-13 Furukawa Co Ltd Scintillator
WO2005078171A1 (en) * 2004-02-17 2005-08-25 Mitsui Mining & Smelting Co., Ltd. Zinc tungstenenate single crystal and method for preparation thereof
JP2005263515A (en) * 2004-03-16 2005-09-29 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005263621A (en) * 2004-02-17 2005-09-29 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005272274A (en) * 2004-03-26 2005-10-06 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005343753A (en) * 2004-06-03 2005-12-15 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its production method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1274887C (en) * 2001-07-12 2006-09-13 古河机械金属株式会社 Method for preparing tungstate single crystal
JP5087913B2 (en) 2006-05-30 2012-12-05 日立化成工業株式会社 Single crystal for scintillator and method for producing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2240301A1 (en) * 1972-08-16 1974-02-28 Siemens Ag PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL BARS WITH SPECIFIC RESISTANCE DROPPING DOWN TO THE CENTER OF THE BAR
DE2550154A1 (en) * 1975-11-07 1977-05-12 Alusuisse THERMAL TREATMENT OF SUBSTRATE PLATES

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141087A (en) * 1982-12-29 1984-08-13 ゼネラル・エレクトリック・カンパニイ Solid detector module
JP2003041244A (en) * 2001-07-25 2003-02-13 Furukawa Co Ltd Scintillator
WO2005078171A1 (en) * 2004-02-17 2005-08-25 Mitsui Mining & Smelting Co., Ltd. Zinc tungstenenate single crystal and method for preparation thereof
JP2005263621A (en) * 2004-02-17 2005-09-29 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005263515A (en) * 2004-03-16 2005-09-29 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005272274A (en) * 2004-03-26 2005-10-06 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its manufacturing method
JP2005343753A (en) * 2004-06-03 2005-12-15 Mitsui Mining & Smelting Co Ltd Zinc tungstate single crystal and its production method

Also Published As

Publication number Publication date
DE3148988C2 (en) 1986-01-02
GB2089777A (en) 1982-06-30
DE3148988A1 (en) 1982-06-24
JPS646160B2 (en) 1989-02-02
GB2089777B (en) 1984-06-13

Similar Documents

Publication Publication Date Title
Yamase et al. Photochemical study of the alkylammonium molybdates. III. Preparation and properties.
Bray et al. The chemistry of xanthine oxidase. 7. The anaerobic reduction of xanthine oxidase studied by electron-spin resonance and magnetic susceptibility
JPS57100999A (en) Heat treatment of single crystal of tungstic acid compound
SE8206374L (en) BORNITRIDE ASSOCIATION AND PROCEDURE FOR ITS PREPARATION
EP0390672A3 (en) Method for heat process of silicon
Sirois et al. The mechanism of the scopoletin-induced inhibition of the peroxidase catalyzed degradation of indole-3-acetate
Thorne et al. The effect of temperature on the fluorescence kinetics of spinach chloroplasts
JPS56155100A (en) Production of single crystal of ferrite
SU834095A1 (en) Method of producing strontium sulphide-base luminophor
Freeman et al. Observations on the decomposition of X-ray irradiated ammonium perchlorate
Burachas et al. Lead tungstate PbWO4 crystals for high energy physics
JPS5710677A (en) Fluorescent substance
JPS5632582A (en) Method for increasing intensity of light emission of fluorescent material
JPS55147586A (en) Preparation of fluorescent substance
SU1675410A1 (en) Method of treatment of single crystals of high-temperature superconductors
JPS5618679A (en) Production of europium-activated stannic oxide phosphor
JPS5657876A (en) Reparation of zns:mn fluorescent material
JPS5618678A (en) Production of europium-activated stannic oxide phosphor
JPS5249973A (en) Decreasing method of nox in boilr exhaust gas
GB1552573A (en) Process for the oxidation of harmful material in aqueous solution
JPS5382263A (en) Epitaxial growth method
SU849928A1 (en) Method for improving stability of silicon characteristics
JPS52144622A (en) Praparation of a,a-azobisalkanenitrile
JPS5375862A (en) Surface stabilization method of semiconductor
JPS5692241A (en) 1-aroyl-3-halogenocyclohexene