GB2089777B - Process for heat-treating single crystal of tungstate - Google Patents
Process for heat-treating single crystal of tungstateInfo
- Publication number
- GB2089777B GB2089777B GB8137633A GB8137633A GB2089777B GB 2089777 B GB2089777 B GB 2089777B GB 8137633 A GB8137633 A GB 8137633A GB 8137633 A GB8137633 A GB 8137633A GB 2089777 B GB2089777 B GB 2089777B
- Authority
- GB
- United Kingdom
- Prior art keywords
- tungstate
- heat
- single crystal
- treating single
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/006—Compounds containing, besides tungsten, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/32—Thermal properties
- C01P2006/33—Phase transition temperatures
- C01P2006/34—Melting temperatures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Radiation (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175807A JPS57100999A (en) | 1980-12-15 | 1980-12-15 | Heat treatment of single crystal of tungstic acid compound |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2089777A GB2089777A (en) | 1982-06-30 |
GB2089777B true GB2089777B (en) | 1984-06-13 |
Family
ID=16002574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8137633A Expired GB2089777B (en) | 1980-12-15 | 1981-12-14 | Process for heat-treating single crystal of tungstate |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS57100999A (en) |
DE (1) | DE3148988C2 (en) |
GB (1) | GB2089777B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4560877A (en) * | 1982-12-29 | 1985-12-24 | General Electric Company | Solid state detector module |
RU2241081C2 (en) * | 2001-07-12 | 2004-11-27 | Фурукава Ко., Лтд. | Method for producing tungstate mono-crystal |
JP2003041244A (en) * | 2001-07-25 | 2003-02-13 | Furukawa Co Ltd | Scintillator |
JP2005343753A (en) * | 2004-06-03 | 2005-12-15 | Mitsui Mining & Smelting Co Ltd | Zinc tungstate single crystal and its production method |
JP2005263515A (en) * | 2004-03-16 | 2005-09-29 | Mitsui Mining & Smelting Co Ltd | Zinc tungstate single crystal and its manufacturing method |
WO2005078171A1 (en) * | 2004-02-17 | 2005-08-25 | Mitsui Mining & Smelting Co., Ltd. | Zinc tungstenenate single crystal and method for preparation thereof |
JP2005263621A (en) * | 2004-02-17 | 2005-09-29 | Mitsui Mining & Smelting Co Ltd | Zinc tungstate single crystal and its manufacturing method |
JP2005272274A (en) * | 2004-03-26 | 2005-10-06 | Mitsui Mining & Smelting Co Ltd | Zinc tungstate single crystal and its manufacturing method |
JP5087913B2 (en) | 2006-05-30 | 2012-12-05 | 日立化成工業株式会社 | Single crystal for scintillator and method for producing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2240301A1 (en) * | 1972-08-16 | 1974-02-28 | Siemens Ag | PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL BARS WITH SPECIFIC RESISTANCE DROPPING DOWN TO THE CENTER OF THE BAR |
DE2550154A1 (en) * | 1975-11-07 | 1977-05-12 | Alusuisse | THERMAL TREATMENT OF SUBSTRATE PLATES |
-
1980
- 1980-12-15 JP JP55175807A patent/JPS57100999A/en active Granted
-
1981
- 1981-12-10 DE DE3148988A patent/DE3148988C2/en not_active Expired
- 1981-12-14 GB GB8137633A patent/GB2089777B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3148988C2 (en) | 1986-01-02 |
JPS646160B2 (en) | 1989-02-02 |
GB2089777A (en) | 1982-06-30 |
JPS57100999A (en) | 1982-06-23 |
DE3148988A1 (en) | 1982-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
711A | Proceeding under section 117(1) patents act 1977 | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20001214 |