GB1524521A - Growing of crystals - Google Patents
Growing of crystalsInfo
- Publication number
- GB1524521A GB1524521A GB4479274A GB4479274A GB1524521A GB 1524521 A GB1524521 A GB 1524521A GB 4479274 A GB4479274 A GB 4479274A GB 4479274 A GB4479274 A GB 4479274A GB 1524521 A GB1524521 A GB 1524521A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- passage
- order
- crystal
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
On a melt (44) of crystallisable material a plate (16) is allowed to float which has a central passage (18) into which a preferably rotating seed crystal is lowered and then retracted, in order to generate an interface (24) between solid and liquid. The buoyancy of the plate (16) and the thermal conditions are set in such a way, that said interface (24) remains within the passage (18) at all times. In order to avoid sticking and jamming, at least the inner surface of the passage (18) consists of a material which is not wettable by the melt (44). The stresses in the growing crystal can be minimised by the passage (18) being centred with respect to the axis of rotation of the mechanism (22) which rotates and raises the growing crystal. The plate (16) is preferably symmetric, and elongated fingers (28) project downwards from a support (30) fastened to the crystal raising and rotating mechanism (22) and are in contact with points on the perimeter of the plate (16) in order to align the plate (16) axially with the axis of rotation of the mechanism (22). <IMAGE>
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4479274A GB1524521A (en) | 1974-10-16 | 1974-10-16 | Growing of crystals |
DE19752546246 DE2546246C2 (en) | 1974-10-16 | 1975-10-15 | Method and apparatus for pulling a rod-shaped single crystal |
US05/622,464 US4264385A (en) | 1974-10-16 | 1975-10-15 | Growing of crystals |
JP12389175A JPS5164482A (en) | 1974-10-16 | 1975-10-16 | Ketsushokeiseihoho oyobisochi |
CH1342275A CH613637A5 (en) | 1974-10-16 | 1975-10-16 | Process for growing a crystal |
IT2834575A IT1044681B (en) | 1974-10-16 | 1975-10-16 | CRYSTAL GROWTH |
US05/800,866 US4167554A (en) | 1974-10-16 | 1977-05-26 | Crystallization apparatus having floating die member with tapered aperture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4479274A GB1524521A (en) | 1974-10-16 | 1974-10-16 | Growing of crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1524521A true GB1524521A (en) | 1978-09-13 |
Family
ID=10434765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4479274A Expired GB1524521A (en) | 1974-10-16 | 1974-10-16 | Growing of crystals |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5164482A (en) |
CH (1) | CH613637A5 (en) |
DE (1) | DE2546246C2 (en) |
GB (1) | GB1524521A (en) |
IT (1) | IT1044681B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4539173A (en) * | 1983-03-17 | 1985-09-03 | Commissariat A L'energie Atomique | Process for preparing plates of a metallic or semimetallic material from a liquid mass |
CN112663140A (en) * | 2020-12-07 | 2021-04-16 | 山东大学 | Mold device for preparing quaternary halide crystal and preparation method |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1577413A (en) * | 1976-03-17 | 1980-10-22 | Metals Research Ltd | Growth of crystalline material |
DE2830695C3 (en) * | 1977-07-14 | 1982-05-13 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Apparatus for pulling a III / V compound single crystal from a melt |
JPS5418816A (en) * | 1977-07-14 | 1979-02-13 | Tokyo Shibaura Electric Co | Sintered members having good corrosionn resistance to gallium phosphide and gallium arsenide |
FR2509637A1 (en) * | 1981-07-17 | 1983-01-21 | Commissariat Energie Atomique | METHOD OF SUSTAINING, POSITIONING AND CONTACTLESS MOLDING LIQUID MASSES FOR FORMING SOLIDIFICATION OF MATERIALS AND APPLYING SAID METHOD TO SHAPING MICROGRAVITE MATERIALS |
US4605468A (en) * | 1984-07-10 | 1986-08-12 | Hughes Aircraft Company | Shaped crystal fiber growth method |
US5078830A (en) * | 1989-04-10 | 1992-01-07 | Mitsubishi Metal Corporation | Method for growing single crystal |
FR2742366B1 (en) * | 1995-12-19 | 1998-01-09 | Commissariat Energie Atomique | PROCESS AND INSTALLATION FOR SUSTAINING A LIQUID MASS BY A GAS LAYER |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1286510B (en) * | 1962-11-23 | 1969-01-09 | Siemens Ag | Process for the production of band-shaped single crystals consisting of semiconductor material by pulling from a melt |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
DE2007200A1 (en) * | 1970-02-17 | 1971-08-26 | Siemens Ag | Semiconductor rods from melts |
JPS5238513B2 (en) * | 1973-02-19 | 1977-09-29 |
-
1974
- 1974-10-16 GB GB4479274A patent/GB1524521A/en not_active Expired
-
1975
- 1975-10-15 DE DE19752546246 patent/DE2546246C2/en not_active Expired
- 1975-10-16 IT IT2834575A patent/IT1044681B/en active
- 1975-10-16 CH CH1342275A patent/CH613637A5/en not_active IP Right Cessation
- 1975-10-16 JP JP12389175A patent/JPS5164482A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4539173A (en) * | 1983-03-17 | 1985-09-03 | Commissariat A L'energie Atomique | Process for preparing plates of a metallic or semimetallic material from a liquid mass |
CN112663140A (en) * | 2020-12-07 | 2021-04-16 | 山东大学 | Mold device for preparing quaternary halide crystal and preparation method |
Also Published As
Publication number | Publication date |
---|---|
DE2546246A1 (en) | 1976-04-29 |
JPS5527040B2 (en) | 1980-07-17 |
DE2546246C2 (en) | 1982-08-26 |
JPS5164482A (en) | 1976-06-03 |
CH613637A5 (en) | 1979-10-15 |
IT1044681B (en) | 1980-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |