GB1349104A - Apparatus including a spheroidal radiation reflector pair for heating a sample - Google Patents

Apparatus including a spheroidal radiation reflector pair for heating a sample

Info

Publication number
GB1349104A
GB1349104A GB538072A GB538072A GB1349104A GB 1349104 A GB1349104 A GB 1349104A GB 538072 A GB538072 A GB 538072A GB 538072 A GB538072 A GB 538072A GB 1349104 A GB1349104 A GB 1349104A
Authority
GB
United Kingdom
Prior art keywords
major axis
sources
aligned major
spheroidal
aligned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB538072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1349104A publication Critical patent/GB1349104A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0014—Devices wherein the heating current flows through particular resistances
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Radiation-Therapy Devices (AREA)

Abstract

1349104 Heating device for zone melting NIPPON ELECTRIC CO Ltd 4 Feb 1972 [6 Feb 1971] 5380/72 Heading B1S In an apparatus for producing a single crystal by the floating zone technique the heating is effected by a device comprising a pair of inwardly reflecting, substantially prolate spheroidal surface portions disposed outwardly of each other, and having substantially aligned major axis, means for holding the spheroidal surface portions so that the distance between the axially inwardly located foci of the spheroidal surfaces is less than the dimension of the single crystal in the direction of the aligned major axis, a pair of elongated sources of radiant energy inside each spheroidal surface and means for holding the sources so that the longitudinal axis of the sources are substantially parallel with the aligned major axis and that the centre of each source is displaced from the axial outwardly disposed focus of the associated one of the spheroidal surfaces by less than a quarter of the longitudinal dimension of the source in the direction parallel to the aligned major axis and by less than a half off the transverse dimension of the source in the direction perpendicular to the aligned major axis. The device preferably includes a tube of a refractory material translucent to the radiation energy for accomodating the rod. The tube is perpendicular to the aligned major axis. As shown in the figure, prolate spheroidal surface portions 1 and 1' disposed outwardly of each other have substantially aligned major axes and a common focus F 1 , F 1 '. At the foci F 2 and F 2 ' are two sources 2 and 2' of radiant energy preferably quartz halogen lamps having helically wound tungsten filaments 3 and 3', power supplies 5 and 5' and holding means 4 and 4'. The filaments 3 and 3' are arranged substantially parallel with the aligned major axis and with the centres of 3 and 3' at the respective foci F 2 and F 2 '. A seed crystal 11 is held in chuck 12 attached to shaft 13, and the rod 14 to be treated held by chuck 15 in vertical shaft 16. The molten zone 17 is formed by bringing rod 14 into contact with seed 11 and exciting sources 2 and 2'. The single crystal is then formed in a conventional manner using rotatable and vertically sliding shafts 13 and 16. The apparatus includes a quartz tube 40 accommodating the molten zone 17, and pipes 51, 52, 53, and 54, for ventilating the chamber and ducts 61 and 61' for cooling the reflectors 1 and 1'.
GB538072A 1971-02-06 1972-02-04 Apparatus including a spheroidal radiation reflector pair for heating a sample Expired GB1349104A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46004812A JPS5029405B1 (en) 1971-02-06 1971-02-06

Publications (1)

Publication Number Publication Date
GB1349104A true GB1349104A (en) 1974-03-27

Family

ID=11594142

Family Applications (1)

Application Number Title Priority Date Filing Date
GB538072A Expired GB1349104A (en) 1971-02-06 1972-02-04 Apparatus including a spheroidal radiation reflector pair for heating a sample

Country Status (4)

Country Link
US (1) US3761677A (en)
JP (1) JPS5029405B1 (en)
GB (1) GB1349104A (en)
NL (1) NL168278C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3956611A (en) * 1973-12-17 1976-05-11 Ushio Electric Inc. High pressure radiant energy image furnace
JPS53135037A (en) * 1977-04-28 1978-11-25 Nichiden Kikai Kk Heating apparatus
US4419169A (en) * 1978-11-01 1983-12-06 Baxter Travenol Laboratories, Inc. Apparatus for radiant heat sealing of balloon onto catheter shaft
FR2532783A1 (en) * 1982-09-07 1984-03-09 Vu Duy Phach THERMAL PROCESSING MACHINE FOR SEMICONDUCTORS
FR2545668B1 (en) * 1983-05-03 1985-08-09 France Etat Armement RESONATOR WITH INTEGRATED INFRARED THERMOSTAT
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
US4694777A (en) * 1985-07-03 1987-09-22 Roche Gregory A Apparatus for, and methods of, depositing a substance on a substrate
DE3807302A1 (en) * 1988-03-05 1989-09-14 Dornier Gmbh MIRROR STOVE
AU6284890A (en) * 1989-08-18 1991-04-03 United States Department Of Energy Apparatus and method for containerless directional thermal processing of materials in low-gravity environments
JP2002005745A (en) * 2000-06-26 2002-01-09 Nec Corp Temperature measuring device and temperature measuring method
JP4849597B2 (en) * 2004-02-05 2012-01-11 独立行政法人産業技術総合研究所 Single crystal growth equipment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE498501C (en) * 1927-06-28 1930-05-23 Edmund Schroeder Process for welding and soldering with in particular electrically generated radiant heat
US3427435A (en) * 1967-06-02 1969-02-11 Webb James E High speed infrared furnace
US3659332A (en) * 1969-05-05 1972-05-02 Spectra Instr Inc Method of preparing electrical cables for soldering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor

Also Published As

Publication number Publication date
NL7201462A (en) 1972-08-08
JPS5029405B1 (en) 1975-09-23
DE2205558B2 (en) 1976-02-19
US3761677A (en) 1973-09-25
NL168278C (en) 1982-03-16
DE2205558A1 (en) 1972-10-05
NL168278B (en) 1981-10-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years