GB1452076A - Process and apparatus for preparing semiconductor wafers without crystallographic slip - Google Patents

Process and apparatus for preparing semiconductor wafers without crystallographic slip

Info

Publication number
GB1452076A
GB1452076A GB5501573A GB5501573A GB1452076A GB 1452076 A GB1452076 A GB 1452076A GB 5501573 A GB5501573 A GB 5501573A GB 5501573 A GB5501573 A GB 5501573A GB 1452076 A GB1452076 A GB 1452076A
Authority
GB
United Kingdom
Prior art keywords
susceptor
treatment chamber
substrates
lamps
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5501573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of GB1452076A publication Critical patent/GB1452076A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

1452076 Radiant heated furnaces APPLIED MATERIALS INC 27 Nov 1973 [29 Nov 1972] 55015/73 Heading F4B A furnace 1 for heating substrates such as silicon wafers 43 comprises a treatment chamber 7, an elongated opaque susceptor 42 and radiant heat sources 13 above the susceptor whereby the susceptor and substrates are heated directly and simultaneously. The radiant heat source comprises quartz iodide lamps 13 radiating energy having a wave length of about one micron and set in sockets 14 in a block in which are embedded water cooling tubes 19. Cooling air is supplied via plenum chambers 22 to cooling pipes 23. The inner surfaces 11 of the treatment chamber walls and sliding roof 6 are formed of polished sheet aluminium, said walls and roof being also provided with water cooling tubes 18. The susceptor 42 is made of graphite and supported on an H-shaped stand 44. Gaseous reactants supplied via a mixing chamber to the treatment chamber 31. A modification (Fig. 9, not shown) has a horizontal lamp above the treatment chamber. A similar form (Fig. 3) has horizontal lamp (52) below the treatment chamber and another (Fig. 4) has a circular rotatable susceptor (81) with a central hollow shaft (82) through which the reactants are supplied and has vertical lamps (70), the whole being enclosed by a dome (76). Another modification (Fig. 6) retains the domes and has an annular bank (101) for horizontal lamps (102) disposed around a vertical cylindrical susceptor (93) with apertures (96) in which the substrates are disposed.
GB5501573A 1972-11-29 1973-11-27 Process and apparatus for preparing semiconductor wafers without crystallographic slip Expired GB1452076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31044472A 1972-11-29 1972-11-29

Publications (1)

Publication Number Publication Date
GB1452076A true GB1452076A (en) 1976-10-06

Family

ID=23202520

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5501573A Expired GB1452076A (en) 1972-11-29 1973-11-27 Process and apparatus for preparing semiconductor wafers without crystallographic slip

Country Status (5)

Country Link
JP (1) JPS508473A (en)
DE (1) DE2359004C3 (en)
FR (1) FR2207757B2 (en)
GB (1) GB1452076A (en)
NL (1) NL7316340A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2335043A1 (en) * 1975-12-11 1977-07-08 Phizichesky Inst Im Gas phase epitaxy process for semiconductor growth - using concentrated light source in purificn. and heating of substrate surface, suppressing diffusion
JPS5710240A (en) * 1980-06-20 1982-01-19 Sony Corp Forming method of insulating film
JPS5791526A (en) * 1980-11-28 1982-06-07 Fujitsu Ltd Heating method for substrate surface in vacuum container
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
JPS60105221A (en) * 1984-10-11 1985-06-10 Hitachi Ltd Gas phase wafer processing apparatus
FR2594529B1 (en) * 1986-02-19 1990-01-26 Bertin & Cie APPARATUS FOR HEAT TREATMENT OF THIN PARTS, SUCH AS SILICON WAFERS
JPS62227475A (en) * 1986-03-31 1987-10-06 Sekisui Chem Co Ltd Anticorrosion treatment using magnetic fluid
US4811493A (en) * 1987-08-05 1989-03-14 Burgio Joseph T Jr Dryer-cooler apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
FR2114105A5 (en) * 1970-11-16 1972-06-30 Applied Materials Techno Epitaxial radiation heated reactor - including a quartz reaction chamber

Also Published As

Publication number Publication date
DE2359004B2 (en) 1982-09-16
JPS508473A (en) 1975-01-28
DE2359004C3 (en) 1983-05-19
NL7316340A (en) 1974-05-31
FR2207757B2 (en) 1980-01-11
DE2359004A1 (en) 1974-06-06
FR2207757A2 (en) 1974-06-21

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19931126