JPS5791526A - Heating method for substrate surface in vacuum container - Google Patents

Heating method for substrate surface in vacuum container

Info

Publication number
JPS5791526A
JPS5791526A JP16753480A JP16753480A JPS5791526A JP S5791526 A JPS5791526 A JP S5791526A JP 16753480 A JP16753480 A JP 16753480A JP 16753480 A JP16753480 A JP 16753480A JP S5791526 A JPS5791526 A JP S5791526A
Authority
JP
Japan
Prior art keywords
heat
container
vacuum
window
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16753480A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16753480A priority Critical patent/JPS5791526A/en
Publication of JPS5791526A publication Critical patent/JPS5791526A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a film of high quality by surrounding cylindrical heat beam projecting window for passing a heat beam for heating the surface of a substrate in a vacuum container with a reflecting mirror, thereby preventing the exhaust of impurity gas from a heat source. CONSTITUTION:The surface of a substrate 1 placed in a vacuum container 4 is emitted with the heat wire of an infrared ray lamp 11 via a cylindrical projecting window 10 formed at the side wall of the container 4. The cylindrical portion of this window 10 is formed of a transparent quartz cylinder 14 sandwiched with a thin film 13 having good reflectivity such as aluminum, the infrared ray passes through the cylindrical transmission plate 15 sealed at 16 in vacuum to heat the substrate 1. The heat out of the container is transmitted via radiation, conduction and reflection, but since the heat is transmitted only by radiation in the window in vacuum, the interior of the container is not contaminated, thereby forming a film of high quality.
JP16753480A 1980-11-28 1980-11-28 Heating method for substrate surface in vacuum container Pending JPS5791526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16753480A JPS5791526A (en) 1980-11-28 1980-11-28 Heating method for substrate surface in vacuum container

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16753480A JPS5791526A (en) 1980-11-28 1980-11-28 Heating method for substrate surface in vacuum container

Publications (1)

Publication Number Publication Date
JPS5791526A true JPS5791526A (en) 1982-06-07

Family

ID=15851470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16753480A Pending JPS5791526A (en) 1980-11-28 1980-11-28 Heating method for substrate surface in vacuum container

Country Status (1)

Country Link
JP (1) JPS5791526A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110055491A (en) * 2019-05-14 2019-07-26 淮安亮谷光电科技有限公司 The preparation method of complete gold-plated high reflection infrared heating hollow pipe

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (en) * 1972-11-29 1975-01-28
JPS5154770A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd KISOSEICHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508473A (en) * 1972-11-29 1975-01-28
JPS5154770A (en) * 1974-11-08 1976-05-14 Fujitsu Ltd KISOSEICHOHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110055491A (en) * 2019-05-14 2019-07-26 淮安亮谷光电科技有限公司 The preparation method of complete gold-plated high reflection infrared heating hollow pipe

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