JPS57124430A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57124430A JPS57124430A JP919581A JP919581A JPS57124430A JP S57124430 A JPS57124430 A JP S57124430A JP 919581 A JP919581 A JP 919581A JP 919581 A JP919581 A JP 919581A JP S57124430 A JPS57124430 A JP S57124430A
- Authority
- JP
- Japan
- Prior art keywords
- electrode material
- irradiated
- light
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007772 electrode material Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To shorten the processing time of sintering as well as to prevent the punch-through of the electrode material for the subject semiconductor device by a method wherein infrared rays are irradiated on the main surface of the semiconductor substrate whereon an electrode material was evaporated. CONSTITUTION:The electrode material such as aluminum and the like is evaporated on the main surface of the semiconductor substrate 1, and after patterning is performed, the substrate is arranged in a quartz pipe 2. Infrared ray lamp devices (tungsten lamp, for example) 4 are arranged at the upper and the lower parts on the outside of the quartz pipe 2, and an incoherent beam of light with a wavelength range of 0.4-4.0mum is irradiated from the lamp device 4. This irradiated beam of light is reflected by a parabolic reflecting mirror 5, and uniformly irradiated on the semiconductor substrate 1. A high-temperature and short-time heat treatment is performed by heating up the electrode material with the irradiated beam of light. Accordingly, the diffusing into the semiconductor of the electrode material can be suppressed, and an excellent ohmic contact having no punch-through can be obtained for a shallow junction too.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP919581A JPS57124430A (en) | 1981-01-23 | 1981-01-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP919581A JPS57124430A (en) | 1981-01-23 | 1981-01-23 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57124430A true JPS57124430A (en) | 1982-08-03 |
Family
ID=11713722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP919581A Pending JPS57124430A (en) | 1981-01-23 | 1981-01-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57124430A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063926A (en) * | 1983-08-31 | 1985-04-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6312132A (en) * | 1986-07-03 | 1988-01-19 | Sony Corp | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52146559A (en) * | 1976-05-31 | 1977-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Electrode forming method |
-
1981
- 1981-01-23 JP JP919581A patent/JPS57124430A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52146559A (en) * | 1976-05-31 | 1977-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Electrode forming method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063926A (en) * | 1983-08-31 | 1985-04-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS6312132A (en) * | 1986-07-03 | 1988-01-19 | Sony Corp | Manufacture of semiconductor device |
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