EP0400266B1 - Vorrichtung zur Herstellung von Silicium-Einkristallen - Google Patents

Vorrichtung zur Herstellung von Silicium-Einkristallen Download PDF

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Publication number
EP0400266B1
EP0400266B1 EP90101806A EP90101806A EP0400266B1 EP 0400266 B1 EP0400266 B1 EP 0400266B1 EP 90101806 A EP90101806 A EP 90101806A EP 90101806 A EP90101806 A EP 90101806A EP 0400266 B1 EP0400266 B1 EP 0400266B1
Authority
EP
European Patent Office
Prior art keywords
single silicon
quartz glass
opaque
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP90101806A
Other languages
English (en)
French (fr)
Other versions
EP0400266A1 (de
Inventor
Yoshinobu C/O Patent & License Department Shima
Masanori C/O Patent & License Department Ohmura
Akira C/O Patent & License Department Ohtani
Kenji C/O Patent & License Department Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Publication of EP0400266A1 publication Critical patent/EP0400266A1/de
Application granted granted Critical
Publication of EP0400266B1 publication Critical patent/EP0400266B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Definitions

  • the present invention relates to an apparatus for manufacturing single silicon crystal by the use of Czochralski process, and more particularly, to an apparatus for pulling single silicon crystal while continuously feeding silicon materials.
  • a method for pulling single silicon crystal by the use of the Czochralski process has previously been used and this method is a substantially completed technique.
  • the yield of wafers being able to stand their use can be 50 % or less due to maldistribution of dopants and oxygen in case requirements to components are severe.
  • the present invention provides an apparatus for manufacturing single silicon crystal comprising: a quartz crucible accommodated into a graphite crucible, molten silicon being in said quartz crusible; a partition member partitioning molten silicon material in said quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, said material melting portion being replenished with granular silicon and a single silicon crystal being pulled from said single silicon crystal growing portion; a heater for maintaining said molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting said granular silicon fed into said material melting portion, said heater being arranged so that it can surround said graphite crucible; small holes made in said partition member, said molten silicon material moving from said material melting portion to said single silicon growing portion through said small holes; and opaque quartz glass, which said partition member is made of.
  • a decrease of the densities of the oxidation-induced stacking faults and of the vibration of the surface of molten silicon seems to relate to the fact that a ray of light and a ray of heat are prevented from passing through the partition member due to opaqueness of the partition member. That is, it is thought that a radiation and an input of heat in a portion where a molten silicon liquid contacts quartz glass are stabilized and a fluctuation of wettability is decreased.
  • An opaque quartz glass is used as the partition member.
  • a glass which is made opaque by forming small irregularities on the surface of the glass, can be used.
  • a roughness of the irregularities is desired to be 50 to 2000 ⁇ m RMS.
  • RMS means a root mean square value.
  • the irregularities of said quartz glass are formed by causing particles of a quartz glass to deposit on the surface of the quartz glass.
  • the opaque glass (a) is most desirable among said three sorts of the opaque glasses since there is not possibility of separation of quartz glass fragments from the surface of the the partition member on the side of the single silicon growing portion.
  • the opaqueness of the partition member is required during the growth of the single crystal. That is, a glass, which is transparent before the use of it and which becomes opaque at the time of its use, can be used. Then, the effect of the present invention is produced.
  • Fig.1 is a vertical sectional view schematically illustrating an example of the present invention.
  • reference numeral 1 denotes a quartz crucible which is accommodated into graphite crucible 2.
  • Reference numeral 7 denotes molten materials put into the quartz crucible 1, from which single silicon crystal 4 grown into a pillar is pulled.
  • Reference numeral 3 denotes a heater surrounding the graphite crucible 2.
  • the above-described apparatus is fundamentally the same as the apparatus for manufacturing single silicon crystal by the use of the ordinary "Czochralski process".
  • Granular material 6 is fed from material feeding apparatus 5 into a material melting portion A.
  • Reference numeral 8 denotes a partition member which is made of an opaque quartz glass and which is positioned concentrically with the crucible 1 in the crucible 1. Small holes 9 are made in the partition member 8. Molten materials in the material molten portion A flow into the single crystal growing portion through the small holes 9. A lower edge portion of the partition member 8 is previously fused with the crucible 1 or fused with the crucible under influence of heat produced by melting of the silicon material. High-temperature molten materials in the material melting poriton A flow into the single crystal growing portion B through only the small holes 9.
  • Fig.2 is a graphical representation showing a comparison of densities of the oxidation-induced stacking faults (OSF) in the case of the use of the opaque quartz glass and in the case of the use of the transparent quartz glass. It is understood that the densities of the oxidation-induced stacking faults are apparently decreased in the case of the use of the opaque quartz glass.
  • OSF oxidation-induced stacking faults
  • an apparatus for manufacturing single silicon crystal which comprises a crucible having molten silcon material therein and a partition member partitioning said molten silicon material into a single silicon growing portion on the inner side and a material melting portion on the outer side, since said partition member is made of an opaque quartz glass, oxidation-induced stacking faults due to a fluctuation of temperatures and a hindrance to a single crystallization are prevented.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Claims (6)

  1. Vorrichtung zum Herstellen von Siliziumeinkristallen, umfassend:
    einen Quarz-Schmelztiegel (1), der in einem Graphit-Schmelztiegel (2) untergebracht ist und geschmolzenes Silizium aufnimmt;
    ein Trennelement (8), das geschmolzenes Siliziummaterial in dem Quarz-Schmelztiegel (1) in einen Siliziumeinkristall-Wachstumsabschnitt (B) an der Innenseite und einen Materialschmelzabschnitt (A) an der Außenseite teilt, wobei der Materialschmelzabschnitt (A) mit Rohmaterial nachgefüllt und ein Siliziumeinkristall (4) aus dem Siliziumeinkristall-Wachstumsabschnitt (B) gezogen wird;
    ein Heizelement (3), das das geschmolzene Siliziummaterial in dem Siliziumeinkristall-Wachstumsabschnitt (B) auf einer für das Wachstum von Siliziumeinkristallen geeigneten Temperatur hält und Hitze zum Schmelzen des in den Materialschmelzabschnitt (A) geführten Rohmaterials liefert, und das Heizelement so angeordnet ist, daß es den Graphit-Schmelztiegel (2) umgibt; und
    kleine Löcher (9), die in dem Trennelement (8) ausgebildet sind und durch die sich das geschmolzene Siliziummaterial von dem Materialschmelzabschnitt (A) zu dem Siliziumeinkristall-Wachstumsabschnitt (B) bewegt;
    dadurch gekennzeichnet, daß
    das Trennelement (8) aus opaquem Quarzglas gefertigt ist, das durch kleine Unregelmäßigkeiten auf der Oberfläche des Glases trübe gemacht ist.
  2. Vorrichtung gemäß Anspruch 1, dadurch gekennzeichnet, daß das opaque Quarzglas eine sichtbare Strahlendurchlässigkeit von 0 bis 50% besitzt.
  3. Vorrichtung gemäß Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Unregelmäßigkeiten des Quarzglases durch Ablagern von Quarzglaspartikeln auf der Oberfläche des Quarzglases gebildet sind.
  4. Vorrichtung gemäß Anspruch 1, 2 oder 3, dadurch gekennzeichnet, daß das opaque Quarzglas ein durch Ausbilden von Unregelmäßigkeiten von 50 bis 2000µm RMS getrübtes Quarzglas ist.
  5. Vorrichtung gemäß Anspruch 4, dadurch gekennzeichnet, daß die Rauhheit auf der Oberfläche des opaquen Quarzglases ist, die auf der Seite des Einkristall-Wachstumsabschnittes (B) liegt.
  6. Vorrichtung gemäß Anspruch 4 oder 5, dadurch gekennzeichnet, daß die Rauhheit auf der Oberfläche des opaquen Quarzglases ausgebildet ist, die auf der Seite des Materialschmelzabschnittes (A) liegt.
EP90101806A 1989-05-30 1990-01-30 Vorrichtung zur Herstellung von Silicium-Einkristallen Expired - Lifetime EP0400266B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP136448/89 1989-05-30
JP1136448A JPH035392A (ja) 1989-05-30 1989-05-30 シリコン単結晶の製造装置

Publications (2)

Publication Number Publication Date
EP0400266A1 EP0400266A1 (de) 1990-12-05
EP0400266B1 true EP0400266B1 (de) 1994-04-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP90101806A Expired - Lifetime EP0400266B1 (de) 1989-05-30 1990-01-30 Vorrichtung zur Herstellung von Silicium-Einkristallen

Country Status (7)

Country Link
US (1) US4957712A (de)
EP (1) EP0400266B1 (de)
JP (1) JPH035392A (de)
KR (1) KR920009566B1 (de)
CN (1) CN1018851B (de)
DE (1) DE69007858D1 (de)
FI (1) FI902336A0 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991005891A1 (en) * 1989-10-16 1991-05-02 Nkk Corporation Apparatus for manufacturing silicon single crystals
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JPH0585879A (ja) * 1991-09-04 1993-04-06 Mitsubishi Materials Corp 単結晶引上装置
US5284631A (en) * 1992-01-03 1994-02-08 Nkk Corporation Crucible for manufacturing single crystals
TW430699B (en) * 1995-12-27 2001-04-21 Mitsubishi Material Silicon Co Single crystal pulling apparatus
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
US7635414B2 (en) * 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
CN100432023C (zh) * 2006-07-20 2008-11-12 西安超码科技有限公司 单晶硅拉制炉用热场炭/炭坩埚的制备方法
CN104451882A (zh) * 2014-12-19 2015-03-25 单县晶瑞光电有限公司 一种石榴石的生产工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
DE2454092A1 (de) * 1974-11-14 1976-05-26 Wacker Chemitronic Verfahren zum quantitativen entfernen von restschmelzen
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4242553A (en) * 1978-08-31 1980-12-30 Samuel Berkman Apparatus for use in the production of ribbon-shaped crystals from a silicon melt
JPS58130195A (ja) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
IN161924B (de) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
JPS6395195A (ja) * 1986-10-08 1988-04-26 Toshiba Corp 結晶引上げ方法及び装置
US4847053A (en) * 1987-05-05 1989-07-11 Hughes Aircraft Company Growth of glass-clad single crystal fibers
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
JPH0676274B2 (ja) * 1988-11-11 1994-09-28 東芝セラミックス株式会社 シリコン単結晶の製造装置

Also Published As

Publication number Publication date
US4957712A (en) 1990-09-18
DE69007858D1 (de) 1994-05-11
JPH035392A (ja) 1991-01-11
CN1018851B (zh) 1992-10-28
FI902336A0 (fi) 1990-05-10
KR900017934A (ko) 1990-12-20
EP0400266A1 (de) 1990-12-05
CN1047894A (zh) 1990-12-19
KR920009566B1 (ko) 1992-10-19

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