DE69613767D1 - Verfahren zur Züchtung von grossen Einkristallen - Google Patents

Verfahren zur Züchtung von grossen Einkristallen

Info

Publication number
DE69613767D1
DE69613767D1 DE69613767T DE69613767T DE69613767D1 DE 69613767 D1 DE69613767 D1 DE 69613767D1 DE 69613767 T DE69613767 T DE 69613767T DE 69613767 T DE69613767 T DE 69613767T DE 69613767 D1 DE69613767 D1 DE 69613767D1
Authority
DE
Germany
Prior art keywords
single crystals
large single
growing large
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69613767T
Other languages
English (en)
Inventor
Miroslav Vichr
David Samuel Hoover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE69613767D1 publication Critical patent/DE69613767D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE69613767T 1995-05-31 1996-05-28 Verfahren zur Züchtung von grossen Einkristallen Expired - Lifetime DE69613767D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/454,775 US5614019A (en) 1992-06-08 1995-05-31 Method for the growth of industrial crystals

Publications (1)

Publication Number Publication Date
DE69613767D1 true DE69613767D1 (de) 2001-08-16

Family

ID=23806031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613767T Expired - Lifetime DE69613767D1 (de) 1995-05-31 1996-05-28 Verfahren zur Züchtung von grossen Einkristallen

Country Status (6)

Country Link
US (2) US5614019A (de)
EP (1) EP0745707B1 (de)
JP (1) JP2955231B2 (de)
KR (1) KR0177514B1 (de)
CA (1) CA2177345C (de)
DE (1) DE69613767D1 (de)

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FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
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US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6219531B1 (en) * 1998-09-04 2001-04-17 Ericsson Inc. Architecture and frequency plan for a UHF portable radio
DE60043122D1 (de) * 1999-03-17 2009-11-19 Mitsubishi Chem Corp Halbleiterbasis ihre Herstellung und Halbleiterkristallhersetllungsmethode
JP4469552B2 (ja) * 2000-06-15 2010-05-26 エレメント シックス （プロプライエタリイ）リミテッド 厚い単結晶ダイヤモンド層、それを造る方法及びその層から形成された宝石の原石
AU7436801A (en) 2000-06-15 2001-12-24 De Beers Ind Diamond Single crystal diamond prepared by cvd
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
JP2004538230A (ja) 2001-08-08 2004-12-24 アポロ ダイアモンド，インコーポレイティド 合成ダイヤモンドを生成するためのシステム及び方法
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
JP4374823B2 (ja) * 2002-03-22 2009-12-02 住友電気工業株式会社 ダイヤモンド単結晶の製造方法およびダイヤモンド単結晶基板の製造方法
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
US6783592B2 (en) * 2002-10-10 2004-08-31 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
US7501330B2 (en) * 2002-12-05 2009-03-10 Intel Corporation Methods of forming a high conductivity diamond film and structures formed thereby
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2852974A1 (fr) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator Procede de fabrication de cristaux monocristallins
US7704320B2 (en) * 2003-05-01 2010-04-27 Colorado School Of Mines Colloidal crystallization via applied fields
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
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JP4736338B2 (ja) * 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
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JP5594613B2 (ja) * 2005-04-15 2014-09-24 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) * 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US9885644B2 (en) 2006-01-10 2018-02-06 Colorado School Of Mines Dynamic viscoelasticity as a rapid single-cell biomarker
US9878326B2 (en) 2007-09-26 2018-01-30 Colorado School Of Mines Fiber-focused diode-bar optical trapping for microfluidic manipulation
US9487812B2 (en) 2012-02-17 2016-11-08 Colorado School Of Mines Optical alignment deformation spectroscopy
BRPI0706659A2 (pt) * 2006-01-20 2011-04-05 Bp Corp North America Inc métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
US20100203350A1 (en) * 2007-07-20 2010-08-12 Bp Corporation Noth America Inc. Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
KR20100050510A (ko) * 2007-07-20 2010-05-13 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법
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US8709154B2 (en) 2007-07-25 2014-04-29 Amg Idealcast Solar Corporation Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US10722250B2 (en) 2007-09-04 2020-07-28 Colorado School Of Mines Magnetic-field driven colloidal microbots, methods for forming and using the same
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP4982506B2 (ja) * 2009-01-09 2012-07-25 信越化学工業株式会社 単結晶ダイヤモンドの製造方法
JP4375495B2 (ja) * 2009-02-13 2009-12-02 住友電気工業株式会社 ダイヤモンド単結晶基板およびダイヤモンド単結晶の製造方法
JP2010222172A (ja) * 2009-03-23 2010-10-07 Nippon Telegr & Teleph Corp <Ntt> ダイヤモンド薄膜及びその製造方法
WO2010144504A1 (en) * 2009-06-08 2010-12-16 Case Western Reserve University Diamond apparatus and method of manufacture
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
JP5403519B2 (ja) * 2010-02-22 2014-01-29 独立行政法人物質・材料研究機構 結晶ダイヤモンド・エアギャップ構造体の作製方法
RU2434083C1 (ru) * 2010-10-28 2011-11-20 Общество С Ограниченной Ответственностью "Гранник" Способ одновременного получения нескольких ограненных драгоценных камней из синтетического карбида кремния - муассанита
JP5346052B2 (ja) * 2011-03-09 2013-11-20 日本電信電話株式会社 ダイヤモンド薄膜及びその製造方法
JP5831795B2 (ja) * 2011-09-06 2015-12-09 住友電気工業株式会社 ダイヤモンド複合体およびそれから分離した単結晶ダイヤモンド
JP6045975B2 (ja) * 2012-07-09 2016-12-14 東京エレクトロン株式会社 カーボン膜の成膜方法および成膜装置
KR20140142040A (ko) 2013-06-03 2014-12-11 서울바이오시스 주식회사 기판 재생 방법 및 재생 기판
KR102106424B1 (ko) * 2013-09-30 2020-06-02 아다만도 나미키 세이미츠 호오세키 가부시키가이샤 다이아몬드 기판 및 다이아몬드 기판의 제조 방법
GB201320304D0 (en) * 2013-11-18 2014-01-01 Element Six Ltd Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said
FR3022563B1 (fr) * 2014-06-23 2016-07-15 Univ Paris Xiii Paris-Nord Villetaneuse Procede de formation d'un monocristal de materiau a partir d'un substrat monocristallin
EP3421637B1 (de) 2014-08-11 2020-10-14 Sumitomo Electric Industries, Ltd. Diamant
CN104651928A (zh) * 2015-01-17 2015-05-27 王宏兴 金刚石同质外延横向生长方法
CN104911702B (zh) * 2015-04-29 2017-07-28 西安交通大学 基于自组装工艺的高质量单晶金刚石生长方法
US10211049B2 (en) * 2015-08-07 2019-02-19 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures
JP6015989B2 (ja) * 2015-10-29 2016-10-26 住友電気工業株式会社 ダイヤモンド複合体の製造方法、ダイヤモンド単結晶の製造方法、及びダイヤモンド複合体
JP6679022B2 (ja) * 2016-02-29 2020-04-15 信越化学工業株式会社 ダイヤモンド基板の製造方法
JP6699015B2 (ja) * 2016-02-29 2020-05-27 信越化学工業株式会社 ダイヤモンド基板の製造方法
WO2018005619A1 (en) 2016-06-28 2018-01-04 North Carolina State University Synthesis and processing of pure and nv nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
US10736388B2 (en) * 2017-04-26 2020-08-11 GTL Company Encapsulation of material with precious and semi-precious stones
WO2020026245A1 (en) * 2018-08-02 2020-02-06 Capsoul Diamond Ltd. Patterned diamond and method of making same
CN109161964A (zh) * 2018-09-30 2019-01-08 济南中乌新材料有限公司 一种大尺寸cvd金刚石晶体的制备方法
KR102230458B1 (ko) * 2018-11-30 2021-03-23 한국산업기술대학교산학협력단 다이아몬드 기판 제조 방법
JP7129633B2 (ja) * 2019-01-10 2022-09-02 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物結晶の製造方法
KR102528990B1 (ko) * 2020-12-28 2023-05-03 알에프에이치아이씨 주식회사 다이아몬드 기판, 다이아몬드 커버, 다이아몬드 플레이트 및 반도체 패키지의 제조 공정, 및 이를 이용하여 제조된 반도체 패키지
CN113571409B (zh) * 2021-07-02 2022-04-15 北京科技大学 一种高导热金刚石增强碳化硅衬底的制备方法

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Also Published As

Publication number Publication date
US5753038A (en) 1998-05-19
JP2955231B2 (ja) 1999-10-04
CA2177345C (en) 1999-11-23
KR960041432A (ko) 1996-12-19
EP0745707A1 (de) 1996-12-04
CA2177345A1 (en) 1996-12-01
EP0745707B1 (de) 2001-07-11
JPH09124393A (ja) 1997-05-13
KR0177514B1 (ko) 1999-03-20
US5614019A (en) 1997-03-25

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