DE69009831D1 - Verfahren zur Züchtung eines Einkristalls. - Google Patents

Verfahren zur Züchtung eines Einkristalls.

Info

Publication number
DE69009831D1
DE69009831D1 DE69009831T DE69009831T DE69009831D1 DE 69009831 D1 DE69009831 D1 DE 69009831D1 DE 69009831 T DE69009831 T DE 69009831T DE 69009831 T DE69009831 T DE 69009831T DE 69009831 D1 DE69009831 D1 DE 69009831D1
Authority
DE
Germany
Prior art keywords
growing
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009831T
Other languages
English (en)
Other versions
DE69009831T2 (de
Inventor
Keiji Shirata
Koichi Sassa
Kenji Tomizawa
Nobuyuki Uchida
Taizo Ohmura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1171438A external-priority patent/JP2707736B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE69009831D1 publication Critical patent/DE69009831D1/de
Publication of DE69009831T2 publication Critical patent/DE69009831T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69009831T 1989-04-10 1990-03-15 Verfahren zur Züchtung eines Einkristalls. Expired - Fee Related DE69009831T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9042789 1989-04-10
JP1171438A JP2707736B2 (ja) 1989-04-10 1989-07-03 単結晶育成方法

Publications (2)

Publication Number Publication Date
DE69009831D1 true DE69009831D1 (de) 1994-07-21
DE69009831T2 DE69009831T2 (de) 1994-11-17

Family

ID=26431911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009831T Expired - Fee Related DE69009831T2 (de) 1989-04-10 1990-03-15 Verfahren zur Züchtung eines Einkristalls.

Country Status (4)

Country Link
US (1) US5078830A (de)
EP (1) EP0392210B1 (de)
CA (1) CA2012323A1 (de)
DE (1) DE69009831T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3234711B2 (ja) * 1994-04-14 2001-12-04 住友電気工業株式会社 酸化物の融液保持方法および酸化物結晶の作製方法
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
DE19847695A1 (de) * 1998-10-15 2000-04-20 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls
JP4778188B2 (ja) * 2002-02-13 2011-09-21 Ｊｘ日鉱日石金属株式会社 化合物半導体単結晶の製造方法
US7147894B2 (en) * 2002-03-25 2006-12-12 The University Of North Carolina At Chapel Hill Method for assembling nano objects
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
EP2611952B1 (de) 2010-09-03 2021-12-29 GTAT IP Holding LLC Verfahren zur herstellung eines mit gallium, indium oder aluminium dotierten silizium-einkristalls
CN103562443B (zh) 2011-03-23 2016-05-18 丰田自动车株式会社 SiC单晶的制造方法和制造装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6512921A (de) * 1965-10-06 1967-04-07
GB1524521A (en) * 1974-10-16 1978-09-13 Metals Research Ltd Growing of crystals
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1552214A (en) * 1975-07-23 1979-09-12 Ici Ltd Production of fibrecontaining articles
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
US4597949A (en) * 1983-03-31 1986-07-01 Massachusetts Institute Of Technology Apparatus for growing crystals
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS60226492A (ja) * 1984-04-23 1985-11-11 Toshiba Corp 化合物半導体単結晶の製造装置
JPS61158892A (ja) * 1985-01-05 1986-07-18 Showa Denko Kk 単結晶引上方法およびその治具

Also Published As

Publication number Publication date
EP0392210B1 (de) 1994-06-15
EP0392210A1 (de) 1990-10-17
US5078830A (en) 1992-01-07
DE69009831T2 (de) 1994-11-17
CA2012323A1 (en) 1990-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee