DE69133236D1 - Verfahren zur Einkristallzüchtung - Google Patents

Verfahren zur Einkristallzüchtung

Info

Publication number
DE69133236D1
DE69133236D1 DE69133236T DE69133236T DE69133236D1 DE 69133236 D1 DE69133236 D1 DE 69133236D1 DE 69133236 T DE69133236 T DE 69133236T DE 69133236 T DE69133236 T DE 69133236T DE 69133236 D1 DE69133236 D1 DE 69133236D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal growing
growing method
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69133236T
Other languages
English (en)
Other versions
DE69133236T2 (de
Inventor
Daisuke Wakabayashi
Toshio Anbe
Masao Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Silicon Corp
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3125444A external-priority patent/JP2732723B2/ja
Priority claimed from JP3099329A external-priority patent/JP2735960B2/ja
Priority claimed from JP3138048A external-priority patent/JP2726773B2/ja
Application filed by Mitsubishi Materials Silicon Corp, Mitsubishi Materials Corp filed Critical Mitsubishi Materials Silicon Corp
Publication of DE69133236D1 publication Critical patent/DE69133236D1/de
Application granted granted Critical
Publication of DE69133236T2 publication Critical patent/DE69133236T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69133236T 1991-04-26 1991-12-27 Verfahren zur Einkristallzüchtung Expired - Lifetime DE69133236T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP12544491 1991-04-26
JP3125444A JP2732723B2 (ja) 1991-04-26 1991-04-26 液面温度制御方法
JP9932991 1991-04-30
JP3099329A JP2735960B2 (ja) 1991-04-30 1991-04-30 液面制御方法
JP3138048A JP2726773B2 (ja) 1991-06-10 1991-06-10 シリコン単結晶引き上げ方法
JP13804891 1991-06-10

Publications (2)

Publication Number Publication Date
DE69133236D1 true DE69133236D1 (de) 2003-05-15
DE69133236T2 DE69133236T2 (de) 2004-02-26

Family

ID=27308924

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69132009T Expired - Lifetime DE69132009T2 (de) 1991-04-26 1991-12-27 Verfahren zum ziehen von einkristallen
DE69133236T Expired - Lifetime DE69133236T2 (de) 1991-04-26 1991-12-27 Verfahren zur Einkristallzüchtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69132009T Expired - Lifetime DE69132009T2 (de) 1991-04-26 1991-12-27 Verfahren zum ziehen von einkristallen

Country Status (6)

Country Link
US (1) US5408952A (de)
EP (2) EP0536405B1 (de)
KR (1) KR100237848B1 (de)
DE (2) DE69132009T2 (de)
FI (2) FI120102B (de)
WO (1) WO1992019797A1 (de)

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US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
JPH09221386A (ja) * 1996-02-08 1997-08-26 Komatsu Electron Metals Co Ltd 単結晶引上装置
US6071340A (en) * 1996-02-28 2000-06-06 General Signal Technology Corporation Apparatus for melt-level detection in Czochralski crystal growth systems
DE69601424T2 (de) * 1996-06-27 1999-06-02 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
JP2991162B2 (ja) * 1997-07-18 1999-12-20 日本電気株式会社 プロセスシミュレーション方法、プロセスシミュレータ及びプロセスシミュレーションプログラムを記録した記録媒体
EP0903428A3 (de) * 1997-09-03 2000-07-19 Leybold Systems GmbH Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
DE19806949A1 (de) * 1998-02-19 1999-08-26 Leybold Systems Gmbh Verfahren zum Steuern von Kristallzüchtungsprozessen
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
US6776840B1 (en) 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
JP4548306B2 (ja) 2005-10-31 2010-09-22 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
JP4784401B2 (ja) * 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
US8221545B2 (en) 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
US20100024717A1 (en) 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
KR101415370B1 (ko) * 2011-08-31 2014-07-07 주식회사 엘지실트론 잉곳 성장 장치 및 잉곳 제조 방법
KR101335538B1 (ko) * 2012-07-18 2013-12-03 주식회사 엘지실트론 단결정 실리콘 잉곳 제조 장치 및 방법
DE102013002471B4 (de) 2013-02-13 2016-08-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung einer Schmelze in einem Tiegel
KR101638486B1 (ko) * 2015-12-08 2016-07-11 웅진에너지 주식회사 단결정 잉곳 성장장치의 온도 프로파일 설정방법
CN105951175A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 单晶硅生长过程中粘壁硅的去除方法
CN111139520A (zh) * 2018-11-05 2020-05-12 上海新昇半导体科技有限公司 一种直拉法引晶方法
CN109972201B (zh) * 2019-04-07 2020-09-11 浙江晶盛机电股份有限公司 用于直拉法硅单晶生长过程的晶体直径控制方法
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
US12018400B2 (en) 2021-02-16 2024-06-25 Globalwafers Co., Ltd. Methods and systems of capturing transient thermal responses of regions of crystal pullers
CN113235165B (zh) * 2021-04-26 2022-10-14 上海大学 一种Fe1-xTMxS单晶材料的制备方法

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GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
JPS5482383A (en) * 1977-12-14 1979-06-30 Nippon Telegr & Teleph Corp <Ntt> Manufacturing apparatus for single crystal
EP0097676A4 (de) * 1982-01-04 1985-11-11 Commw Of Australia Steuerung des diameters im czochralski-kristallwachstum.
US4508970A (en) * 1982-07-15 1985-04-02 Motorola, Inc. Melt level sensing system and method
JPS6042294A (ja) * 1983-08-12 1985-03-06 Fujitsu Ltd メルト表面位置測定装置
JPS6071593A (ja) * 1983-09-26 1985-04-23 Fujitsu Ltd 結晶成長方法
FR2553793B1 (fr) * 1983-10-19 1986-02-14 Crismatec Procede de commande d'une machine de tirage de monocristaux
JPS60186498A (ja) * 1984-03-05 1985-09-21 Toshiba Ceramics Co Ltd 半導体単結晶の製造方法
JPS6186493A (ja) * 1984-10-04 1986-05-01 Toshiba Mach Co Ltd 半導体結晶引上機
JPS61122187A (ja) * 1984-11-20 1986-06-10 Toshiba Mach Co Ltd 単結晶引上機
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JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
JP2563327B2 (ja) * 1987-05-06 1996-12-11 国際電気株式会社 単結晶の直径制御方法及び装置
JPS6424089A (en) * 1987-07-21 1989-01-26 Shinetsu Handotai Kk Device for adjusting initial position of melt surface
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPS6483595A (en) * 1987-09-25 1989-03-29 Shinetsu Handotai Kk Device for measuring crystal diameter
FR2621053A1 (fr) * 1987-09-29 1989-03-31 Commissariat Energie Atomique Procede de commande d'une machine de tirage de monocristaux
JPH01126295A (ja) * 1987-11-11 1989-05-18 Kawasaki Steel Corp 単結晶製造装置
JPH01128295A (ja) * 1987-11-13 1989-05-19 Sharp Corp 半導体メモリ装置
FI87660C (fi) * 1988-03-03 1993-02-10 Leybold Ag Foerfarande och anordning foer dragning av monokristaller
JP2664088B2 (ja) * 1989-05-25 1997-10-15 株式会社マックサイエンス 熱変化温度測定方法
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
JPH0774117B2 (ja) * 1989-10-20 1995-08-09 信越半導体株式会社 ヒータの温度パターン作成方法及びこの温度パターンを用いたＳｉ単結晶育成制御装置

Also Published As

Publication number Publication date
EP0536405B1 (de) 2000-03-01
EP0911430B1 (de) 2003-04-09
FI925866A (fi) 1992-12-23
KR930701643A (ko) 1993-06-12
KR100237848B1 (ko) 2000-01-15
EP0536405A1 (de) 1993-04-14
EP0911430A1 (de) 1999-04-28
FI120546B (fi) 2009-11-30
FI20040787A (fi) 2004-06-08
FI120102B (fi) 2009-06-30
FI925866A0 (fi) 1992-12-23
DE69132009T2 (de) 2000-08-03
DE69132009D1 (de) 2000-04-06
US5408952A (en) 1995-04-25
DE69133236T2 (de) 2004-02-26
EP0536405A4 (en) 1995-11-15
WO1992019797A1 (en) 1992-11-12

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Legal Events

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8364 No opposition during term of opposition