DE69122599D1 - Verfahren und gerät zur herstellung von einkristallen - Google Patents

Verfahren und gerät zur herstellung von einkristallen

Info

Publication number
DE69122599D1
DE69122599D1 DE69122599T DE69122599T DE69122599D1 DE 69122599 D1 DE69122599 D1 DE 69122599D1 DE 69122599 T DE69122599 T DE 69122599T DE 69122599 T DE69122599 T DE 69122599T DE 69122599 D1 DE69122599 D1 DE 69122599D1
Authority
DE
Germany
Prior art keywords
single crystals
producing single
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122599T
Other languages
English (en)
Other versions
DE69122599T2 (de
Inventor
Kazuhisa Matsumoto
Masami Tatsumi
Tomohiro Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19813390A external-priority patent/JP2830411B2/ja
Priority claimed from JP26070890A external-priority patent/JP2876765B2/ja
Priority claimed from JP28103290A external-priority patent/JP2900577B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69122599D1 publication Critical patent/DE69122599D1/de
Publication of DE69122599T2 publication Critical patent/DE69122599T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y10S117/907—Refluxing atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69122599T 1990-07-26 1991-07-24 Verfahren und gerät zur herstellung von einkristallen Expired - Fee Related DE69122599T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19813390A JP2830411B2 (ja) 1990-07-26 1990-07-26 化合物半導体単結晶の成長方法と装置
JP26070890A JP2876765B2 (ja) 1990-09-28 1990-09-28 単結晶の成長方法および成長装置
JP28103290A JP2900577B2 (ja) 1990-10-18 1990-10-18 化合物単結晶の成長方法および成長装置
PCT/JP1991/000987 WO1992001826A1 (en) 1990-07-26 1991-07-24 Method and apparatus for making single crystal

Publications (2)

Publication Number Publication Date
DE69122599D1 true DE69122599D1 (de) 1996-11-14
DE69122599T2 DE69122599T2 (de) 1997-04-03

Family

ID=27327464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122599T Expired - Fee Related DE69122599T2 (de) 1990-07-26 1991-07-24 Verfahren und gerät zur herstellung von einkristallen

Country Status (4)

Country Link
US (1) US5290395A (de)
EP (1) EP0494312B1 (de)
DE (1) DE69122599T2 (de)
WO (1) WO1992001826A1 (de)

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* Cited by examiner, † Cited by third party
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DE3712668A1 (de) * 1987-04-14 1988-10-27 Hans J Scheel Verfahren und vorrichtung zur zuechtung von kristallen nach der czochralski-methode
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
JP3004563B2 (ja) * 1995-04-20 2000-01-31 三菱マテリアル株式会社 シリコン単結晶の種結晶
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
JPH10158088A (ja) * 1996-11-25 1998-06-16 Ebara Corp 固体材料の製造方法及びその製造装置
US6019841A (en) * 1997-03-24 2000-02-01 G.T. Equuipment Technologies Inc. Method and apparatus for synthesis and growth of semiconductor crystals
US6572700B2 (en) * 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
JP4778188B2 (ja) * 2002-02-13 2011-09-21 Ｊｘ日鉱日石金属株式会社 化合物半導体単結晶の製造方法
EP1757716B1 (de) * 2004-06-11 2016-08-17 Nippon Telegraph And Telephone Corporation Verfahren und vorrichtung zur kristallherstellung
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
TWI298752B (en) * 2004-08-02 2008-07-11 Univ Nat Taiwan Method and apparatus for forming long single crystals with good uniformity
US8652257B2 (en) * 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material
CN101798705A (zh) * 2010-03-12 2010-08-11 上海太阳能电池研究与发展中心 一种从低温熔体中连续拉晶提纯多晶硅的方法及专用装置
CN102791374B (zh) 2010-03-18 2016-04-13 格雷斯公司 用于由胶溶化氧化铝制备改进的沸石催化剂的方法
US9416322B2 (en) 2010-03-18 2016-08-16 W. R. Grace & Co.-Conn. Process for making improved catalysts from clay-derived zeolites
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
CN110760931B (zh) * 2019-11-22 2024-03-19 中国电子科技集团公司第十三研究所 一种利用铟磷混合物制备磷化铟晶体的系统
CN113249778B (zh) * 2021-04-08 2022-05-17 中国电子科技集团公司第十三研究所 一种大尺寸化合物半导体单晶制备方法
CN113308738B (zh) * 2021-06-01 2022-06-17 中国电子科技集团公司第十三研究所 注入合成后连续lec与vgf结合制备化合物半导体晶体的方法

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GB755422A (en) * 1953-01-19 1956-08-22 Telefunken Gmbh An improved method for the production of single crystals of semi-conductor materials
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL237834A (de) * 1958-04-09
CA956867A (en) * 1970-12-04 1974-10-29 Albert G. Fischer Method and apparatus for forming crystalline bodies of a semiconductor material
SE393174B (sv) * 1973-09-10 1977-05-02 Gebelius Sven Runo Vilhelm Sett att medelst explosionspaverkan astadkomma halupptagning i transportror jemte anordning for verkstellande av settet
US3926344A (en) * 1974-06-20 1975-12-16 Us Energy Volumetric dispenser for small particles from plural sources
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
DE3117376A1 (de) * 1981-05-02 1982-12-02 Bayer Ag Vorrichtung zum herstellen eines reaktionsfaehigen, massivstoff oder schaumstoff bildenden reaktionsgemisches aus zwei fliessfaehigen reaktionskomponenten
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS598695A (ja) * 1982-07-06 1984-01-17 Fujitsu Ltd 結晶成長装置
JPS6046073B2 (ja) * 1982-10-27 1985-10-14 小松電子金属株式会社 半導体単結晶の製造方法
US4547258A (en) * 1982-12-22 1985-10-15 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
JPS6051693A (ja) * 1983-08-30 1985-03-23 Hitachi Cable Ltd ＧａＡｌＡｓ混晶単結晶成長方法とその装置
GB2147223A (en) * 1983-10-01 1985-05-09 Stc Plc Semiconductor substrates
JPS60137891A (ja) * 1983-12-24 1985-07-22 Sumitomo Electric Ind Ltd 化合物半導体単結晶引き上げ方法と装置
JPS62501497A (ja) * 1984-12-04 1987-06-18 ダイアモンド・キュ−ビック・コ−ポレ−ション 連続して引き出される単結晶シリコンインゴット
JPS61158897A (ja) * 1984-12-29 1986-07-18 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上げ方法
JPS61158896A (ja) * 1984-12-29 1986-07-18 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法と装置
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
JPS6287489A (ja) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd るつぼの回収方法及び装置
DE3806918A1 (de) * 1988-03-03 1989-09-14 Leybold Ag Vorrichtung zum ziehen von einkristallen
US5037503A (en) * 1988-05-31 1991-08-06 Osaka Titanium Co., Ltd. Method for growing silicon single crystal
JPH03232789A (ja) * 1990-02-09 1991-10-16 Fujitsu Ltd 半導体結晶成長装置

Also Published As

Publication number Publication date
DE69122599T2 (de) 1997-04-03
EP0494312A1 (de) 1992-07-15
EP0494312A4 (en) 1993-01-20
WO1992001826A1 (en) 1992-02-06
EP0494312B1 (de) 1996-10-09
US5290395A (en) 1994-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee