DE69723865D1 - Verfahren und vorrichtung zur herstellung von einkristallen - Google Patents

Verfahren und vorrichtung zur herstellung von einkristallen

Info

Publication number
DE69723865D1
DE69723865D1 DE69723865T DE69723865T DE69723865D1 DE 69723865 D1 DE69723865 D1 DE 69723865D1 DE 69723865 T DE69723865 T DE 69723865T DE 69723865 T DE69723865 T DE 69723865T DE 69723865 D1 DE69723865 D1 DE 69723865D1
Authority
DE
Germany
Prior art keywords
single crystals
producing single
producing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69723865T
Other languages
English (en)
Other versions
DE69723865T2 (de
Inventor
Josuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69723865D1 publication Critical patent/DE69723865D1/de
Application granted granted Critical
Publication of DE69723865T2 publication Critical patent/DE69723865T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
DE69723865T 1997-10-23 1997-10-23 Verfahren und vorrichtung zur herstellung von einkristallen Expired - Fee Related DE69723865T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003844 WO1999022048A1 (fr) 1997-10-23 1997-10-23 Procede et dispositif de fabrication d'un monocristal

Publications (2)

Publication Number Publication Date
DE69723865D1 true DE69723865D1 (de) 2003-09-04
DE69723865T2 DE69723865T2 (de) 2004-04-22

Family

ID=14181360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69723865T Expired - Fee Related DE69723865T2 (de) 1997-10-23 1997-10-23 Verfahren und vorrichtung zur herstellung von einkristallen

Country Status (7)

Country Link
US (1) US6153007A (de)
EP (1) EP0947613B1 (de)
JP (1) JP3287579B2 (de)
AU (1) AU727487B2 (de)
CA (1) CA2275640C (de)
DE (1) DE69723865T2 (de)
WO (1) WO1999022048A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6264742B1 (en) 1998-07-10 2001-07-24 Ball Semiconductor Inc. Single crystal processing by in-situ seed injection
JP2000169279A (ja) * 1998-12-10 2000-06-20 Komatsu Electronic Metals Co Ltd 球状半導体結晶製造方法及び製造装置
JP3087964B1 (ja) * 1999-09-28 2000-09-18 工業技術院長 自由落下液滴の衝突凝固による高品質結晶材料の製造方法
JP3579316B2 (ja) * 1999-10-19 2004-10-20 三洋電機株式会社 半導体装置の製造方法
US6355873B1 (en) 2000-06-21 2002-03-12 Ball Semiconductor, Inc. Spherical shaped solar cell fabrication and panel assembly
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
US7052659B1 (en) * 2000-07-18 2006-05-30 General Electric Company Sequential high throughput screening method and system
US6383287B1 (en) 2000-09-28 2002-05-07 Ball Semiconductor, Inc. System and method for performing diffusion on a three-dimensional substrate
US6706959B2 (en) * 2000-11-24 2004-03-16 Clean Venture 21 Corporation Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles
US6790561B2 (en) * 2001-03-15 2004-09-14 Wilson Greatbatch Ltd. Process for fabricating continuously coated electrodes on a porous current collector and cell designs incorporating said electrodes
US7001543B2 (en) * 2001-10-23 2006-02-21 Kyocera Corporation Apparatus and method for manufacturing semiconductor grains
US7189278B2 (en) * 2002-04-18 2007-03-13 Clean Venture 21 Corporation Method and apparatus for producing semiconductor or metal particles
JPWO2003095719A1 (ja) 2002-05-13 2005-09-15 中田　仗祐 落下管型粒状結晶製造装置
JP4013226B2 (ja) * 2004-01-29 2007-11-28 独立行政法人 宇宙航空研究開発機構 無容器凝固法によるバリウムチタン酸化物単結晶材料片の製造方法
US8237045B2 (en) 2004-03-12 2012-08-07 Kyosemi Corporation Laminated solar battery
CN100498176C (zh) * 2004-03-31 2009-06-10 飞机梦技术株式会社 下落型静电悬浮炉
JP4789086B2 (ja) * 2005-03-08 2011-10-05 独立行政法人 宇宙航空研究開発機構 無容器凝固法によるバリウチタン系酸化物ガラスの製造方法
US7323047B2 (en) 2005-03-25 2008-01-29 Kyocera Corporation Method for manufacturing granular silicon crystal
WO2006123403A1 (ja) * 2005-05-17 2006-11-23 Kyosemi Corporation 粒状結晶体製造装置
US20080029020A1 (en) * 2006-07-28 2008-02-07 Kyocera Corporation Method and apparatus for producing granular crystal
JP5163101B2 (ja) * 2007-12-25 2013-03-13 信越半導体株式会社 単結晶製造装置および製造方法
US8535440B1 (en) * 2010-04-12 2013-09-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of promoting single crystal growth during melt growth of semiconductors
JP6424301B2 (ja) * 2014-02-24 2018-11-14 竹田 眞司 効率のいい太陽光発電装置の製造方法
US9725821B1 (en) 2014-02-28 2017-08-08 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Cavity pull rod: device to promote single crystal growth from the melt

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4389904A (en) * 1981-03-23 1983-06-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for supercooling and solidifying substances
JPS6212690A (ja) * 1985-07-09 1987-01-21 Matsushita Electric Ind Co Ltd 結晶成長方法
DE3627810A1 (de) * 1986-08-16 1988-02-18 Battelle Institut E V Verfahren und vorrichtung zur herstellung von einkristallen
US4738831A (en) * 1986-10-31 1988-04-19 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method and apparatus for growing crystals
JP2776859B2 (ja) * 1989-01-11 1998-07-16 株式会社日立製作所 薄膜形成方法
JPH0369587A (ja) * 1989-08-10 1991-03-25 Hitachi Cable Ltd 液相エピタキシャル成長装置
JP2655825B2 (ja) * 1995-03-15 1997-09-24 科学技術庁金属材料技術研究所長 溶融試料の切り放し方法とその装置

Also Published As

Publication number Publication date
JP3287579B2 (ja) 2002-06-04
AU727487B2 (en) 2000-12-14
EP0947613B1 (de) 2003-07-30
AU4723397A (en) 1999-05-17
CA2275640C (en) 2004-01-27
EP0947613A1 (de) 1999-10-06
US6153007A (en) 2000-11-28
WO1999022048A1 (fr) 1999-05-06
DE69723865T2 (de) 2004-04-22
EP0947613A4 (de) 2000-01-12
CA2275640A1 (en) 1999-05-06

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee