DE60013451D1 - Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen - Google Patents
Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallenInfo
- Publication number
- DE60013451D1 DE60013451D1 DE60013451T DE60013451T DE60013451D1 DE 60013451 D1 DE60013451 D1 DE 60013451D1 DE 60013451 T DE60013451 T DE 60013451T DE 60013451 T DE60013451 T DE 60013451T DE 60013451 D1 DE60013451 D1 DE 60013451D1
- Authority
- DE
- Germany
- Prior art keywords
- high quality
- producing high
- quality crystals
- crystals
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17881599 | 1999-05-22 | ||
JP17881599 | 1999-05-22 | ||
PCT/JP2000/003264 WO2000071786A1 (fr) | 1999-05-22 | 2000-05-22 | Procede et appareil de fabrication de monocristaux de grande qualite |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60013451D1 true DE60013451D1 (de) | 2004-10-07 |
DE60013451T2 DE60013451T2 (de) | 2005-10-13 |
Family
ID=16055154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60013451T Expired - Lifetime DE60013451T2 (de) | 1999-05-22 | 2000-05-22 | Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen |
Country Status (8)
Country | Link |
---|---|
US (1) | US6843849B1 (de) |
EP (1) | EP1201793B1 (de) |
KR (1) | KR100492808B1 (de) |
CN (1) | CN1172029C (de) |
DE (1) | DE60013451T2 (de) |
RU (1) | RU2209860C1 (de) |
TW (1) | TW538148B (de) |
WO (1) | WO2000071786A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002187791A (ja) * | 2000-12-15 | 2002-07-05 | Canon Inc | 液相成長方法および液相成長装置 |
KR101167732B1 (ko) * | 2003-03-17 | 2012-07-23 | 오사카 유니버시티 | Ⅲ족 원소 질화물 단결정의 제조 방법 및 이것에 이용하는장치 |
WO2007102610A1 (ja) * | 2006-03-06 | 2007-09-13 | Ngk Insulators, Ltd. | 単結晶の育成方法 |
CN101245490B (zh) * | 2007-02-15 | 2010-08-18 | 中国科学院理化技术研究所 | 一种CsLiB6O10晶体的助熔剂生长方法 |
US8389099B1 (en) | 2007-06-01 | 2013-03-05 | Rubicon Technology, Inc. | Asymmetrical wafer configurations and method for creating the same |
US20090090135A1 (en) * | 2007-10-04 | 2009-04-09 | Infrared Focal Systems, Inc. | Method of making optical glass windows free of defects |
WO2010151844A2 (en) * | 2009-06-25 | 2010-12-29 | Georgia Tech Research Corporation | Metal oxide structures, devices, & fabrication methods |
CN101974783B (zh) * | 2010-10-22 | 2012-07-04 | 中国科学院新疆理化技术研究所 | 化合物硼酸锂铯非线性光学晶体及其制备方法和用途 |
US11180866B2 (en) | 2013-04-10 | 2021-11-23 | Kla Corporation | Passivation of nonlinear optical crystals |
JP2015034104A (ja) * | 2013-08-08 | 2015-02-19 | 株式会社リコー | 13族窒化物結晶の製造装置及び製造方法 |
US20160138184A1 (en) * | 2014-11-13 | 2016-05-19 | Po-Chung Wang | Melt surface flow field measurement method for artificial crystal growth systems and crystal growth apparatus utilizing the method |
CN110747504B (zh) * | 2019-11-26 | 2021-03-23 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
CN111455453B (zh) * | 2020-05-13 | 2022-03-18 | 济南大学 | 一种生长超晶格铌酸锂晶体的方法 |
CN113151892B (zh) * | 2021-04-27 | 2022-02-18 | 曲靖阳光新能源股份有限公司 | 一种单晶硅生产设备 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515938A (en) * | 1978-07-18 | 1980-02-04 | Toshiba Corp | Production of oxide piezoelectric body single crystal |
GB2084046B (en) * | 1980-08-27 | 1984-07-25 | Secr Defence | Method and apparatus for crystal growth |
JPS58208193A (ja) * | 1982-05-28 | 1983-12-03 | Hitachi Ltd | るつぼ |
EP0173764B1 (de) * | 1984-08-31 | 1989-12-13 | Gakei Electric Works Co., Ltd. | Verfahren und Vorrichtung zur Herstellung von Einkristallen |
JPS63159284A (ja) * | 1986-12-24 | 1988-07-02 | Mitsubishi Electric Corp | 単結晶引上げ装置 |
JPS63190794A (ja) * | 1987-02-02 | 1988-08-08 | Sumitomo Electric Ind Ltd | 単結晶製造方法およびその装置 |
JPH0633218B2 (ja) * | 1987-12-08 | 1994-05-02 | 日本鋼管株式会社 | シリコン単結晶の製造装置 |
KR920006204B1 (ko) * | 1988-08-31 | 1992-08-01 | 삼성코닝 주식회사 | LiNbO₃단결정 성장방법 |
JPH02107587A (ja) * | 1988-10-13 | 1990-04-19 | Mitsubishi Metal Corp | 半導体単結晶育成装置 |
KR930004510A (ko) * | 1991-08-24 | 1993-03-22 | 한형수 | LiTaOз단결정의 제조방법 |
US5343827A (en) * | 1992-02-19 | 1994-09-06 | Crystal Technology, Inc. | Method for crystal growth of beta barium boratean |
JPH05238875A (ja) * | 1992-02-25 | 1993-09-17 | Mitsubishi Materials Corp | 単結晶引上装置 |
JP3261594B2 (ja) * | 1992-04-24 | 2002-03-04 | 日立金属株式会社 | タンタル酸リチウム単結晶、単結晶基板および光素子 |
JP2888079B2 (ja) * | 1993-02-04 | 1999-05-10 | 信越半導体株式会社 | シリコン単結晶引上げ用ルツボ |
JPH07277880A (ja) * | 1994-04-05 | 1995-10-24 | Hitachi Metals Ltd | 酸化物単結晶およびその製造方法 |
JP2812427B2 (ja) * | 1994-07-18 | 1998-10-22 | 科学技術振興事業団 | セシウム・リチウム・ボレート結晶 |
JPH08253393A (ja) * | 1995-01-19 | 1996-10-01 | Hoya Corp | Ktp固溶体単結晶及びその製造方法 |
US5683281A (en) * | 1995-02-27 | 1997-11-04 | Hitco Technologies, Inc | High purity composite useful as furnace components |
DE69619005T2 (de) * | 1995-03-16 | 2002-07-11 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zur Züchtung eines Einkristalles |
JPH08295507A (ja) * | 1995-04-26 | 1996-11-12 | Hoya Corp | 光学結晶及びその製造方法 |
JP3769800B2 (ja) * | 1996-01-12 | 2006-04-26 | 株式会社Sumco | 単結晶引上装置 |
EP0786542B1 (de) * | 1996-01-26 | 2002-10-02 | Japan Science and Technology Corporation | Cäsium-Lithiumboratkristall |
US5824149A (en) * | 1996-02-28 | 1998-10-20 | Ferrofluidics Corporation | Method and apparatus for controlling crystal temperature gradients in crystal growing systems |
EP0821082B1 (de) * | 1996-06-27 | 1999-01-20 | Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft | Verfahren und Vorrichtung zur Steuerung des Kristallwachstums |
-
2000
- 2000-05-22 EP EP20000927839 patent/EP1201793B1/de not_active Expired - Lifetime
- 2000-05-22 KR KR10-2001-7014906A patent/KR100492808B1/ko active IP Right Grant
- 2000-05-22 RU RU2001134296/12A patent/RU2209860C1/ru active
- 2000-05-22 WO PCT/JP2000/003264 patent/WO2000071786A1/ja active IP Right Grant
- 2000-05-22 TW TW089109805A patent/TW538148B/zh not_active IP Right Cessation
- 2000-05-22 CN CNB008079307A patent/CN1172029C/zh not_active Expired - Lifetime
- 2000-05-22 US US09/979,505 patent/US6843849B1/en not_active Expired - Lifetime
- 2000-05-22 DE DE60013451T patent/DE60013451T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6843849B1 (en) | 2005-01-18 |
WO2000071786A1 (fr) | 2000-11-30 |
KR20020012229A (ko) | 2002-02-15 |
EP1201793B1 (de) | 2004-09-01 |
DE60013451T2 (de) | 2005-10-13 |
CN1351679A (zh) | 2002-05-29 |
KR100492808B1 (ko) | 2005-06-03 |
EP1201793A4 (de) | 2003-02-05 |
CN1172029C (zh) | 2004-10-20 |
EP1201793A1 (de) | 2002-05-02 |
RU2209860C1 (ru) | 2003-08-10 |
TW538148B (en) | 2003-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |