DE60013451D1 - Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen - Google Patents

Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen

Info

Publication number
DE60013451D1
DE60013451D1 DE60013451T DE60013451T DE60013451D1 DE 60013451 D1 DE60013451 D1 DE 60013451D1 DE 60013451 T DE60013451 T DE 60013451T DE 60013451 T DE60013451 T DE 60013451T DE 60013451 D1 DE60013451 D1 DE 60013451D1
Authority
DE
Germany
Prior art keywords
high quality
producing high
quality crystals
crystals
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60013451T
Other languages
English (en)
Other versions
DE60013451T2 (de
Inventor
Takatomo Sasaki
Yusuke Mori
Masashi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Application granted granted Critical
Publication of DE60013451D1 publication Critical patent/DE60013451D1/de
Publication of DE60013451T2 publication Critical patent/DE60013451T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60013451T 1999-05-22 2000-05-22 Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen Expired - Lifetime DE60013451T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17881599 1999-05-22
JP17881599 1999-05-22
PCT/JP2000/003264 WO2000071786A1 (fr) 1999-05-22 2000-05-22 Procede et appareil de fabrication de monocristaux de grande qualite

Publications (2)

Publication Number Publication Date
DE60013451D1 true DE60013451D1 (de) 2004-10-07
DE60013451T2 DE60013451T2 (de) 2005-10-13

Family

ID=16055154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60013451T Expired - Lifetime DE60013451T2 (de) 1999-05-22 2000-05-22 Verfahren und vorrichtung zur herstellung von hochqualitativen einkristallen

Country Status (8)

Country Link
US (1) US6843849B1 (de)
EP (1) EP1201793B1 (de)
KR (1) KR100492808B1 (de)
CN (1) CN1172029C (de)
DE (1) DE60013451T2 (de)
RU (1) RU2209860C1 (de)
TW (1) TW538148B (de)
WO (1) WO2000071786A1 (de)

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JP2002187791A (ja) * 2000-12-15 2002-07-05 Canon Inc 液相成長方法および液相成長装置
KR101167732B1 (ko) * 2003-03-17 2012-07-23 오사카 유니버시티 Ⅲ족 원소 질화물 단결정의 제조 방법 및 이것에 이용하는장치
WO2007102610A1 (ja) * 2006-03-06 2007-09-13 Ngk Insulators, Ltd. 単結晶の育成方法
CN101245490B (zh) * 2007-02-15 2010-08-18 中国科学院理化技术研究所 一种CsLiB6O10晶体的助熔剂生长方法
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
US20090090135A1 (en) * 2007-10-04 2009-04-09 Infrared Focal Systems, Inc. Method of making optical glass windows free of defects
WO2010151844A2 (en) * 2009-06-25 2010-12-29 Georgia Tech Research Corporation Metal oxide structures, devices, & fabrication methods
CN101974783B (zh) * 2010-10-22 2012-07-04 中国科学院新疆理化技术研究所 化合物硼酸锂铯非线性光学晶体及其制备方法和用途
US11180866B2 (en) 2013-04-10 2021-11-23 Kla Corporation Passivation of nonlinear optical crystals
JP2015034104A (ja) * 2013-08-08 2015-02-19 株式会社リコー １３族窒化物結晶の製造装置及び製造方法
US20160138184A1 (en) * 2014-11-13 2016-05-19 Po-Chung Wang Melt surface flow field measurement method for artificial crystal growth systems and crystal growth apparatus utilizing the method
CN110747504B (zh) * 2019-11-26 2021-03-23 中国科学院物理研究所 一种碳化硅单晶的生长方法
CN111455453B (zh) * 2020-05-13 2022-03-18 济南大学 一种生长超晶格铌酸锂晶体的方法
CN113151892B (zh) * 2021-04-27 2022-02-18 曲靖阳光新能源股份有限公司 一种单晶硅生产设备

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JPS5515938A (en) * 1978-07-18 1980-02-04 Toshiba Corp Production of oxide piezoelectric body single crystal
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
JPS58208193A (ja) * 1982-05-28 1983-12-03 Hitachi Ltd るつぼ
EP0173764B1 (de) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Verfahren und Vorrichtung zur Herstellung von Einkristallen
JPS63159284A (ja) * 1986-12-24 1988-07-02 Mitsubishi Electric Corp 単結晶引上げ装置
JPS63190794A (ja) * 1987-02-02 1988-08-08 Sumitomo Electric Ind Ltd 単結晶製造方法およびその装置
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
KR920006204B1 (ko) * 1988-08-31 1992-08-01 삼성코닝 주식회사 LiNbO₃단결정 성장방법
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置
KR930004510A (ko) * 1991-08-24 1993-03-22 한형수 LiTaOз단결정의 제조방법
US5343827A (en) * 1992-02-19 1994-09-06 Crystal Technology, Inc. Method for crystal growth of beta barium boratean
JPH05238875A (ja) * 1992-02-25 1993-09-17 Mitsubishi Materials Corp 単結晶引上装置
JP3261594B2 (ja) * 1992-04-24 2002-03-04 日立金属株式会社 タンタル酸リチウム単結晶、単結晶基板および光素子
JP2888079B2 (ja) * 1993-02-04 1999-05-10 信越半導体株式会社 シリコン単結晶引上げ用ルツボ
JPH07277880A (ja) * 1994-04-05 1995-10-24 Hitachi Metals Ltd 酸化物単結晶およびその製造方法
JP2812427B2 (ja) * 1994-07-18 1998-10-22 科学技術振興事業団 セシウム・リチウム・ボレート結晶
JPH08253393A (ja) * 1995-01-19 1996-10-01 Hoya Corp Ｋｔｐ固溶体単結晶及びその製造方法
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DE69619005T2 (de) * 1995-03-16 2002-07-11 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zur Züchtung eines Einkristalles
JPH08295507A (ja) * 1995-04-26 1996-11-12 Hoya Corp 光学結晶及びその製造方法
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
EP0786542B1 (de) * 1996-01-26 2002-10-02 Japan Science and Technology Corporation Cäsium-Lithiumboratkristall
US5824149A (en) * 1996-02-28 1998-10-20 Ferrofluidics Corporation Method and apparatus for controlling crystal temperature gradients in crystal growing systems
EP0821082B1 (de) * 1996-06-27 1999-01-20 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Also Published As

Publication number Publication date
US6843849B1 (en) 2005-01-18
WO2000071786A1 (fr) 2000-11-30
KR20020012229A (ko) 2002-02-15
EP1201793B1 (de) 2004-09-01
DE60013451T2 (de) 2005-10-13
CN1351679A (zh) 2002-05-29
KR100492808B1 (ko) 2005-06-03
EP1201793A4 (de) 2003-02-05
CN1172029C (zh) 2004-10-20
EP1201793A1 (de) 2002-05-02
RU2209860C1 (ru) 2003-08-10
TW538148B (en) 2003-06-21

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