DE60035082D1 - Vorrichtung und Verfahren zur Erzeugzung von Diamantschichten - Google Patents

Vorrichtung und Verfahren zur Erzeugzung von Diamantschichten

Info

Publication number
DE60035082D1
DE60035082D1 DE60035082T DE60035082T DE60035082D1 DE 60035082 D1 DE60035082 D1 DE 60035082D1 DE 60035082 T DE60035082 T DE 60035082T DE 60035082 T DE60035082 T DE 60035082T DE 60035082 D1 DE60035082 D1 DE 60035082D1
Authority
DE
Germany
Prior art keywords
diamond films
producing diamond
producing
films
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035082T
Other languages
English (en)
Other versions
DE60035082T2 (de
Inventor
Wook-Seong Lee
Young Joon Baik
Kwang Yong Eun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
Korea Institute of Science and Technology KIST
Original Assignee
Korea Advanced Institute of Science and Technology KAIST
Korea Institute of Science and Technology KIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Advanced Institute of Science and Technology KAIST, Korea Institute of Science and Technology KIST filed Critical Korea Advanced Institute of Science and Technology KAIST
Publication of DE60035082D1 publication Critical patent/DE60035082D1/de
Application granted granted Critical
Publication of DE60035082T2 publication Critical patent/DE60035082T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE60035082T 1999-04-06 2000-04-05 Vorrichtung und Verfahren zur Erzeugzung von Diamantschichten Expired - Lifetime DE60035082T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990011854A KR100302457B1 (ko) 1999-04-06 1999-04-06 다이아몬드 막 증착방법
KR9911854 1999-04-06

Publications (2)

Publication Number Publication Date
DE60035082D1 true DE60035082D1 (de) 2007-07-19
DE60035082T2 DE60035082T2 (de) 2008-02-07

Family

ID=19578792

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035082T Expired - Lifetime DE60035082T2 (de) 1999-04-06 2000-04-05 Vorrichtung und Verfahren zur Erzeugzung von Diamantschichten

Country Status (4)

Country Link
US (2) US6399151B2 (de)
EP (1) EP1043419B1 (de)
KR (1) KR100302457B1 (de)
DE (1) DE60035082T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040144492A1 (en) * 2001-06-01 2004-07-29 Taro Ikeda Plasma processing device
US7148079B1 (en) * 2002-11-01 2006-12-12 Advanced Micro Devices, Inc. Diamond like carbon silicon on insulator substrates and methods of fabrication thereof
KR100924287B1 (ko) * 2007-05-10 2009-10-30 한국과학기술연구원 양광주가 존재하지 않는 직류 전원 플라스마 증착 장치와,양광주를 배제한 상태에서의 물질 증착 방법 및 이에 의해제조된 다이아몬드 박막
JP2009074118A (ja) * 2007-09-19 2009-04-09 Fuji Electric Device Technology Co Ltd 保護層形成装置
KR100899355B1 (ko) * 2007-11-15 2009-05-27 한국과학기술연구원 플라스마 증착 장치 및 방법
KR100958833B1 (ko) * 2007-12-26 2010-05-24 한국과학기술연구원 수중환경에서의 ｄｌｃ박막의 내마모성 및 계면 접합력을증가시키는 박막 증착 기술
US8347814B2 (en) * 2008-01-22 2013-01-08 Raytheon Canada Limited Method and apparatus for coating a curved surface
US7674723B2 (en) * 2008-02-06 2010-03-09 Applied Materials, Inc. Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge
US20090258151A1 (en) * 2008-04-10 2009-10-15 Raytheon Company Method and Apparatus for Coating Curved Surfaces
US8398776B2 (en) * 2008-05-12 2013-03-19 Raytheon Canada Limited Method and apparatus for supporting workpieces in a coating apparatus
US8246748B2 (en) * 2008-07-09 2012-08-21 Raytheon Canada Limited Method and apparatus for coating surfaces
US20110020623A1 (en) * 2009-07-22 2011-01-27 Raytheon Company Method and Apparatus for Repairing an Optical Component Substrate Through Coating
CN103643218A (zh) * 2013-11-14 2014-03-19 中山市创科科研技术服务有限公司 一种制备金刚石薄膜的简单装置
WO2019003151A1 (en) * 2017-06-28 2019-01-03 Icdat Ltd. SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION OF SYNTHETIC DIAMONDS
WO2019034728A1 (de) * 2017-08-18 2019-02-21 Gühring KG Verfahren zum beschichten temperaturempfindlicher substrate mit polykristallinem diamant

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007373A (en) * 1989-05-24 1991-04-16 Ionic Atlanta, Inc. Spiral hollow cathode
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5314570A (en) 1990-07-18 1994-05-24 Sumitomo Electric Industries Ltd. Process and apparatus for the production of diamond
DE4029270C1 (de) * 1990-09-14 1992-04-09 Balzers Ag, Balzers, Li
US5352493A (en) * 1991-05-03 1994-10-04 Veniamin Dorfman Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
JPH06280026A (ja) * 1993-03-24 1994-10-04 Semiconductor Energy Lab Co Ltd 成膜装置及び成膜方法
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
JPH06310430A (ja) * 1993-04-26 1994-11-04 Fuji Electric Co Ltd 水素化非晶質カーボン膜の製造装置ならびに製造方法
JPH06305886A (ja) * 1993-04-27 1994-11-01 Ulvac Japan Ltd ダイヤモンド薄膜形成装置
EP0634778A1 (de) * 1993-07-12 1995-01-18 The Boc Group, Inc. Hohlkathoden-Netzwerk
JP3107683B2 (ja) * 1993-08-12 2000-11-13 富士通株式会社 ダイヤモンドの気相合成方法
KR960010086B1 (ko) * 1993-12-29 1996-07-25 김은영 고밀도 직류 글로우 방전에 의한 다이아몬드막 증착방법
AU2239995A (en) * 1994-04-06 1995-10-30 Regents Of The University Of California, The Process to produce diamond films
JPH07297157A (ja) * 1994-04-19 1995-11-10 Nippon Steel Corp 半導体基板上の異物除去装置
JP2956494B2 (ja) * 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5535906A (en) * 1995-01-30 1996-07-16 Advanced Energy Industries, Inc. Multi-phase DC plasma processing system
WO1996031899A1 (en) * 1995-04-07 1996-10-10 Advanced Energy Industries, Inc. Adjustable energy quantum thin film plasma processing system
US5576939A (en) * 1995-05-05 1996-11-19 Drummond; Geoffrey N. Enhanced thin film DC plasma power supply
US5647964A (en) * 1995-06-02 1997-07-15 Korea Institute Of Science And Technology Diamond film synthesizing apparatus and method thereof using direct current glow discharge plasma enhanced chemical vapor deposition
US5584974A (en) 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
KR100258984B1 (ko) * 1997-12-24 2000-08-01 윤종용 건식 식각 장치
JPH11224795A (ja) * 1998-02-10 1999-08-17 Shin Seiki:Kk プラズマ生成方法、プラズマ生成装置、プラズマ利用表面処理方法、並びにプラズマ利用ガス処理方法

Also Published As

Publication number Publication date
US20020110648A1 (en) 2002-08-15
US6399151B2 (en) 2002-06-04
EP1043419B1 (de) 2007-06-06
KR100302457B1 (ko) 2001-10-29
US6786176B2 (en) 2004-09-07
KR20000065504A (ko) 2000-11-15
EP1043419A1 (de) 2000-10-11
US20010053422A1 (en) 2001-12-20
DE60035082T2 (de) 2008-02-07

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