DE69936274D1 - Verfahren und Vorrichtung zur Filmabscheidung - Google Patents
Verfahren und Vorrichtung zur FilmabscheidungInfo
- Publication number
- DE69936274D1 DE69936274D1 DE69936274T DE69936274T DE69936274D1 DE 69936274 D1 DE69936274 D1 DE 69936274D1 DE 69936274 T DE69936274 T DE 69936274T DE 69936274 T DE69936274 T DE 69936274T DE 69936274 D1 DE69936274 D1 DE 69936274D1
- Authority
- DE
- Germany
- Prior art keywords
- film deposition
- deposition
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10090224A JP2976965B2 (ja) | 1998-04-02 | 1998-04-02 | 成膜方法及び成膜装置 |
JP9022498 | 1998-04-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69936274D1 true DE69936274D1 (de) | 2007-07-26 |
DE69936274T2 DE69936274T2 (de) | 2008-02-14 |
Family
ID=13992526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69936274T Expired - Fee Related DE69936274T2 (de) | 1998-04-02 | 1999-04-01 | Verfahren und Vorrichtung zur Filmabscheidung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6124003A (de) |
EP (1) | EP0947603B1 (de) |
JP (1) | JP2976965B2 (de) |
KR (1) | KR100419406B1 (de) |
DE (1) | DE69936274T2 (de) |
TW (1) | TW541348B (de) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3948857B2 (ja) * | 1999-07-14 | 2007-07-25 | 株式会社荏原製作所 | ビーム源 |
JP2003530481A (ja) * | 1999-11-19 | 2003-10-14 | ナノ スケール サーフェイス システムズ インコーポレイテッド | 無機/有機誘電体フィルムを堆積させるシステム及び方法 |
JP5011631B2 (ja) * | 2004-06-01 | 2012-08-29 | 富士ゼロックス株式会社 | 半導体製造装置および半導体製造システム |
ATE532203T1 (de) * | 2004-08-27 | 2011-11-15 | Fei Co | Lokalisierte plasmabehandlung |
KR100635852B1 (ko) | 2005-01-06 | 2006-10-19 | 삼성전자주식회사 | 반도체 제조장치 |
KR100706809B1 (ko) * | 2006-02-07 | 2007-04-12 | 삼성전자주식회사 | 이온 빔 조절 장치 및 그 방법 |
CN101451237B (zh) | 2007-11-30 | 2012-02-08 | 中微半导体设备(上海)有限公司 | 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室 |
CN102471875A (zh) * | 2009-07-17 | 2012-05-23 | 株式会社爱发科 | 成膜装置 |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9209032B2 (en) * | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Electric pressure systems for control of plasma properties and uniformity |
JP6054249B2 (ja) * | 2013-05-27 | 2016-12-27 | 住友重機械工業株式会社 | 成膜装置 |
US20160076142A1 (en) * | 2014-03-07 | 2016-03-17 | Advanced Ion Beam Technology, Inc. | Deposition Apparatus and Deposition Method Using the Same |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11721542B2 (en) | 2019-11-27 | 2023-08-08 | Applied Materials, Inc. | Dual plasma pre-clean for selective gap fill |
WO2021108294A2 (en) * | 2019-11-27 | 2021-06-03 | Applied Materials, Inc. | Processing chamber with multiple plasma units |
WO2023178650A1 (zh) * | 2022-03-25 | 2023-09-28 | 华中科技大学 | 原子层沉积设备及原子层沉积薄膜的制备方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US3734769A (en) * | 1970-08-06 | 1973-05-22 | T Hirschfeld | Method of forming microelements |
US4440108A (en) * | 1982-09-24 | 1984-04-03 | Spire Corporation | Ion beam coating apparatus |
US4986214A (en) * | 1986-12-16 | 1991-01-22 | Mitsubishi Denki Kabushiki Kaisha | Thin film forming apparatus |
KR960015609B1 (ko) * | 1987-01-19 | 1996-11-18 | 미쓰다 가쓰시게 | 플라즈마 처리장치 및 방법 |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
JPS63279552A (ja) * | 1987-05-11 | 1988-11-16 | Nissin Electric Co Ltd | イオンビ−ム照射装置 |
JPH01132033A (ja) * | 1987-11-17 | 1989-05-24 | Hitachi Ltd | イオン源及び薄膜形成装置 |
DE3803355A1 (de) * | 1988-02-05 | 1989-08-17 | Leybold Ag | Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage |
DE3809734C1 (de) * | 1988-03-23 | 1989-05-03 | Helmut Prof. Dr. 7805 Boetzingen De Haberland | |
KR910016054A (ko) * | 1990-02-23 | 1991-09-30 | 미다 가쓰시게 | 마이크로 전자 장치용 표면 처리 장치 및 그 방법 |
EP0515352A1 (de) * | 1991-05-24 | 1992-11-25 | IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. | Ionenquelle |
JPH05326452A (ja) * | 1991-06-10 | 1993-12-10 | Kawasaki Steel Corp | プラズマ処理装置及び方法 |
JPH0765781A (ja) * | 1993-08-20 | 1995-03-10 | Ulvac Japan Ltd | イオンドーピング装置 |
US5495107A (en) * | 1994-04-06 | 1996-02-27 | Thermo Jarrell Ash Corporation | Analysis |
JPH08335447A (ja) * | 1995-06-07 | 1996-12-17 | Nissin Electric Co Ltd | イオン源 |
JP3196632B2 (ja) * | 1996-02-08 | 2001-08-06 | 日新電機株式会社 | 結晶性シリコン膜の形成方法及び装置 |
US5760405A (en) * | 1996-02-16 | 1998-06-02 | Eaton Corporation | Plasma chamber for controlling ion dosage in ion implantation |
JPH09245995A (ja) * | 1996-03-01 | 1997-09-19 | Nissin Electric Co Ltd | ラジカル源の複数電極を用いた荷電粒子除去機構 |
JP3129265B2 (ja) * | 1997-11-28 | 2001-01-29 | 日新電機株式会社 | 薄膜形成装置 |
-
1998
- 1998-04-02 JP JP10090224A patent/JP2976965B2/ja not_active Expired - Fee Related
-
1999
- 1999-04-01 EP EP99106694A patent/EP0947603B1/de not_active Expired - Lifetime
- 1999-04-01 DE DE69936274T patent/DE69936274T2/de not_active Expired - Fee Related
- 1999-04-01 KR KR10-1999-0011474A patent/KR100419406B1/ko not_active IP Right Cessation
- 1999-04-01 US US09/283,289 patent/US6124003A/en not_active Expired - Fee Related
- 1999-04-02 TW TW088105311A patent/TW541348B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0947603B1 (de) | 2007-06-13 |
EP0947603A2 (de) | 1999-10-06 |
JP2976965B2 (ja) | 1999-11-10 |
KR100419406B1 (ko) | 2004-02-19 |
TW541348B (en) | 2003-07-11 |
KR19990082851A (ko) | 1999-11-25 |
JPH11286781A (ja) | 1999-10-19 |
US6124003A (en) | 2000-09-26 |
EP0947603A3 (de) | 2003-03-26 |
DE69936274T2 (de) | 2008-02-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |