ATE532203T1 - Lokalisierte plasmabehandlung - Google Patents
Lokalisierte plasmabehandlungInfo
- Publication number
- ATE532203T1 ATE532203T1 AT05076917T AT05076917T ATE532203T1 AT E532203 T1 ATE532203 T1 AT E532203T1 AT 05076917 T AT05076917 T AT 05076917T AT 05076917 T AT05076917 T AT 05076917T AT E532203 T1 ATE532203 T1 AT E532203T1
- Authority
- AT
- Austria
- Prior art keywords
- plasma
- reactive gas
- ions
- work piece
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60495104P | 2004-08-27 | 2004-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE532203T1 true ATE532203T1 (de) | 2011-11-15 |
Family
ID=35414575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05076917T ATE532203T1 (de) | 2004-08-27 | 2005-08-22 | Lokalisierte plasmabehandlung |
Country Status (4)
Country | Link |
---|---|
US (2) | US8087379B2 (de) |
EP (1) | EP1630849B1 (de) |
JP (1) | JP5523651B2 (de) |
AT (1) | ATE532203T1 (de) |
Families Citing this family (47)
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EP1630849B1 (de) * | 2004-08-27 | 2011-11-02 | Fei Company | Lokalisierte Plasmabehandlung |
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WO2012063474A1 (ja) * | 2010-11-10 | 2012-05-18 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5973466B2 (ja) | 2011-01-28 | 2016-08-23 | エフ・イ−・アイ・カンパニー | Tem試料の調製 |
US8853078B2 (en) * | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
JP6219019B2 (ja) | 2011-02-25 | 2017-10-25 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム・システムにおいて大電流モードと小電流モードとを高速に切り替える方法 |
US8354655B2 (en) * | 2011-05-03 | 2013-01-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for controlling critical dimension and roughness in resist features |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
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US9105438B2 (en) * | 2012-05-31 | 2015-08-11 | Fei Company | Imaging and processing for plasma ion source |
US8728951B2 (en) | 2012-07-31 | 2014-05-20 | Varian Semiconductor Equipment Associates, Inc. | Method and system for ion-assisted processing |
US20140073138A1 (en) * | 2012-09-12 | 2014-03-13 | Ming-Yu Huang | Method for plasma etching and plasma etching apparatus thereof |
DE102012220353B4 (de) * | 2012-11-08 | 2015-11-26 | Sauer Ultrasonic Gmbh | Werkzeug, Werkzeugmaschine und Bearbeitungsverfahren |
KR101479746B1 (ko) | 2013-07-29 | 2015-01-07 | 경희대학교 산학협력단 | 국소 플라즈마 에칭 장치 및 에칭 방법 |
GB201413496D0 (en) * | 2014-07-30 | 2014-09-10 | Innovation Ulster Ltd | A secondary/downstream or ion free plasma based surface augmentation method |
JP2018528872A (ja) * | 2015-06-19 | 2018-10-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | レーザー及びガス流による付加製造の表面処理 |
US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
EP3249676B1 (de) | 2016-05-27 | 2018-10-03 | FEI Company | Ladungsträgerteilchenmikroskop mit zwei geladenen teilchenstrahlen und in situ-abscheidungsfunktionalität |
US10141161B2 (en) * | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
US10684407B2 (en) | 2017-10-30 | 2020-06-16 | Facebook Technologies, Llc | Reactivity enhancement in ion beam etcher |
US10502958B2 (en) * | 2017-10-30 | 2019-12-10 | Facebook Technologies, Llc | H2-assisted slanted etching of high refractive index material |
US10914954B2 (en) | 2018-08-03 | 2021-02-09 | Facebook Technologies, Llc | Rainbow reduction for waveguide displays |
US10761330B2 (en) | 2018-01-23 | 2020-09-01 | Facebook Technologies, Llc | Rainbow reduction in waveguide displays |
US10845596B2 (en) | 2018-01-23 | 2020-11-24 | Facebook Technologies, Llc | Slanted surface relief grating for rainbow reduction in waveguide display |
US10649119B2 (en) | 2018-07-16 | 2020-05-12 | Facebook Technologies, Llc | Duty cycle, depth, and surface energy control in nano fabrication |
US11137536B2 (en) | 2018-07-26 | 2021-10-05 | Facebook Technologies, Llc | Bragg-like gratings on high refractive index material |
JP7125749B2 (ja) * | 2018-10-29 | 2022-08-25 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置 |
US11150394B2 (en) | 2019-01-31 | 2021-10-19 | Facebook Technologies, Llc | Duty cycle range increase for waveguide combiners |
US11391950B2 (en) | 2019-06-26 | 2022-07-19 | Meta Platforms Technologies, Llc | Techniques for controlling effective refractive index of gratings |
CN110491754B (zh) * | 2019-08-15 | 2020-08-07 | 中国科学院长春光学精密机械与物理研究所 | 一种基于电感耦合等离子体与离子束耦合的光学加工装置 |
US11226446B2 (en) | 2020-05-06 | 2022-01-18 | Facebook Technologies, Llc | Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings |
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-
2005
- 2005-08-22 EP EP05076917A patent/EP1630849B1/de not_active Not-in-force
- 2005-08-22 AT AT05076917T patent/ATE532203T1/de active
- 2005-08-24 US US11/211,176 patent/US8087379B2/en active Active
- 2005-08-26 JP JP2005246402A patent/JP5523651B2/ja active Active
-
2010
- 2010-09-07 US US12/877,002 patent/US8530006B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US8087379B2 (en) | 2012-01-03 |
JP2006066398A (ja) | 2006-03-09 |
US20110117748A1 (en) | 2011-05-19 |
EP1630849B1 (de) | 2011-11-02 |
US20060045987A1 (en) | 2006-03-02 |
EP1630849A3 (de) | 2009-06-03 |
JP5523651B2 (ja) | 2014-06-18 |
EP1630849A2 (de) | 2006-03-01 |
US8530006B2 (en) | 2013-09-10 |
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