TW200741033A - Ceramic coating member for semiconductor processing apparatus - Google Patents

Ceramic coating member for semiconductor processing apparatus

Info

Publication number
TW200741033A
TW200741033A TW096108628A TW96108628A TW200741033A TW 200741033 A TW200741033 A TW 200741033A TW 096108628 A TW096108628 A TW 096108628A TW 96108628 A TW96108628 A TW 96108628A TW 200741033 A TW200741033 A TW 200741033A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
semiconductor processing
ceramic coating
layer
coating member
Prior art date
Application number
TW096108628A
Other languages
Chinese (zh)
Other versions
TWI351444B (en
Inventor
Yoshiyuki Kobayashi
Takahiro Murakami
Yoshio Harada
Junichi Takeuchi
Ryo Yamasaki
Keigo Kobayashi
Original Assignee
Tokyo Electron Ltd
Tocalo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tocalo Co Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741033A publication Critical patent/TW200741033A/en
Application granted granted Critical
Publication of TWI351444B publication Critical patent/TWI351444B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment

Abstract

A ceramic coating member is provided for improving durability of a member arranged inside a container of a semiconductor processing apparatus for performing plasma etching process or the like under strong corrosion resistant environment. A porous layer composed of a sprayed coating of an oxide material in the group IIIa in the periodic table is provided on the front plane of a metal or nonmetal base material, directly or through an undercoat layer. On the layer, a secondary recrystallized layer is formed by irradiation of high energy of electronic beams, laser beams and the like.
TW096108628A 2006-03-20 2007-03-13 Ceramic coating member for semiconductor processing apparatus TW200741033A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076196A JP5324029B2 (en) 2006-03-20 2006-03-20 Ceramic coating for semiconductor processing equipment

Publications (2)

Publication Number Publication Date
TW200741033A true TW200741033A (en) 2007-11-01
TWI351444B TWI351444B (en) 2011-11-01

Family

ID=38522570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108628A TW200741033A (en) 2006-03-20 2007-03-13 Ceramic coating member for semiconductor processing apparatus

Country Status (5)

Country Link
JP (1) JP5324029B2 (en)
KR (2) KR100939403B1 (en)
CN (1) CN101074473B (en)
TW (1) TW200741033A (en)
WO (1) WO2007108546A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581361B (en) * 2012-05-07 2017-05-01 Tocalo Co Ltd Electrostatic chuck and electrostatic chuck manufacturing method
TWI816975B (en) * 2019-02-14 2023-10-01 日商日本碍子股份有限公司 Firing jig

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4999721B2 (en) * 2008-02-05 2012-08-15 トーカロ株式会社 Thermal spray coating coated member having excellent appearance and method for producing the same
CN102822116B (en) 2010-03-30 2016-01-27 日本碍子株式会社 Use in semiconductor manufacturing apparatus corrosion-resistant member and method for making thereof
KR101400598B1 (en) 2010-03-30 2014-05-27 엔지케이 인슐레이터 엘티디 Corrosion-resistant member for a semiconductor manufacturing device, and manufacturing method therefor
US20120177908A1 (en) * 2010-07-14 2012-07-12 Christopher Petorak Thermal spray coatings for semiconductor applications
KR101236351B1 (en) * 2010-11-30 2013-02-22 (주)제니스월드 Method of coating of MOCVD Quartz ceiling for LED
JP2013095973A (en) * 2011-11-02 2013-05-20 Tocalo Co Ltd Member for semiconductor manufacturing device
CN104364887B (en) 2012-05-22 2017-09-22 株式会社东芝 The manufacture method of plasma processing apparatus part and plasma processing apparatus part
TW201546007A (en) * 2014-06-11 2015-12-16 Creating Nano Technologies Inc Method and apparatus for manufacturing glass structure
JP6362461B2 (en) * 2014-07-14 2018-07-25 有限会社コンタミネーション・コントロール・サービス Corrosion prevention method
CN105428195B (en) * 2014-09-17 2018-07-17 东京毅力科创株式会社 The component of plasma processing apparatus and the manufacturing method of component
KR101723931B1 (en) * 2015-10-12 2017-04-06 (주)티티에스 Surface treated products deposited ceramic covering layer with granule shape
US10422028B2 (en) * 2015-12-07 2019-09-24 Lam Research Corporation Surface coating treatment
US10388492B2 (en) * 2016-04-14 2019-08-20 Fm Industries, Inc. Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor
WO2018012454A1 (en) * 2016-07-14 2018-01-18 信越化学工業株式会社 Slurry for suspension plasma spraying, method for forming rare earth acid fluoride sprayed film, and spraying member
JP7268177B2 (en) * 2019-02-12 2023-05-02 アプライド マテリアルズ インコーポレイテッド Method for manufacturing chamber parts
CN114959547A (en) * 2022-05-30 2022-08-30 苏州众芯联电子材料有限公司 Process for increasing the compactness of a dielectric layer of an electrostatic chuck, process for manufacturing an electrostatic chuck, electrostatic chuck

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58192661A (en) * 1982-05-06 1983-11-10 Kyushu Tokushu Kinzoku Kogyo Kk Production of casting mold for continuous casting
JPS62253758A (en) * 1986-04-24 1987-11-05 Mishima Kosan Co Ltd Formation of cermet layer by laser irradiation and casting mold for continuous casting
JPH04276059A (en) * 1991-02-28 1992-10-01 Sekiyu Sangyo Kasseika Center Method for modifying sprayed deposit
JPH06128762A (en) * 1992-10-21 1994-05-10 Hitachi Chem Co Ltd Electrode plate for plasma etching
JPH104083A (en) * 1996-06-17 1998-01-06 Kyocera Corp Anticorrosive material for semiconductor fabrication
KR100248081B1 (en) * 1997-09-03 2000-04-01 정선종 The method of manufacturing a cubic yba2cu3ox thin film
CN1112460C (en) * 1998-04-17 2003-06-25 清华大学 Method of preparing ceramic coating by laser smelting coating after metal surface plasma spray
JP3784180B2 (en) * 1998-10-29 2006-06-07 京セラ株式会社 Corrosion resistant material
JP3510993B2 (en) * 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same
JP2001308011A (en) * 2000-04-18 2001-11-02 Ngk Insulators Ltd Chamber member for semiconductor manufacturing apparatus
JP3672833B2 (en) * 2000-06-29 2005-07-20 信越化学工業株式会社 Thermal spray powder and thermal spray coating
JP4051351B2 (en) * 2004-03-12 2008-02-20 トーカロ株式会社 Y2O3 spray-coated member excellent in thermal radiation and damage resistance and method for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI581361B (en) * 2012-05-07 2017-05-01 Tocalo Co Ltd Electrostatic chuck and electrostatic chuck manufacturing method
US9799545B2 (en) 2012-05-07 2017-10-24 Tocalo Co., Ltd. Electrostatic chuck and method of manufacturing electrostatic chuck
TWI816975B (en) * 2019-02-14 2023-10-01 日商日本碍子股份有限公司 Firing jig

Also Published As

Publication number Publication date
JP2007247042A (en) 2007-09-27
KR20070095211A (en) 2007-09-28
WO2007108546A1 (en) 2007-09-27
TWI351444B (en) 2011-11-01
KR100939403B1 (en) 2010-01-28
CN101074473A (en) 2007-11-21
JP5324029B2 (en) 2013-10-23
CN101074473B (en) 2012-05-30
KR20090035676A (en) 2009-04-10

Similar Documents

Publication Publication Date Title
TW200741033A (en) Ceramic coating member for semiconductor processing apparatus
TW200741857A (en) Plasma treating apparatus and plasma treating method
EP1780298A4 (en) Y2o3 thermal sprayed film coated member and process for producing the same
TW200608492A (en) System for modifying small structures
US9327313B2 (en) Method and apparatus for acquiring nanostructured coating by effect of laser-induced continuous explosion shock wave
WO2010054112A3 (en) Plasma resistant coatings for plasma chamber components
PL1885658T3 (en) Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)
WO2007038514A3 (en) Apparatus and method for substrate edge etching
TW200714560A (en) Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
WO2011063146A3 (en) Plasma source design
AU2003238006A1 (en) Thermal sprayed yttria-containing coating for plasma reactor
DE60214513D1 (en) PROCESS FOR SURFACE MODIFICATION
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
TW200949013A (en) Ceramic sprayed member, making method, abrasive medium for use therewith
MY149733A (en) Radiation-cured coatings
JP4563966B2 (en) Semiconductor processing apparatus member and method for manufacturing the same
MX2017000407A (en) Hearth roll and manufacturing method therefor.
WO2011000357A3 (en) Method and device for the deposition of thin layers
EP1437424A3 (en) Method and apparatus for smoothing surfaces on an atomic scale
MY139113A (en) Methods of etching photoresist on substrates
ATE483353T1 (en) PRINTING TEMPLATE OF AN SMT PROCESS AND METHOD FOR ITS COATING
TW200632117A (en) Method of mounting substrate in film deposition apparatus and method of depositing film
EP1988565A3 (en) Methods to eliminate m-shape etch rate profile in inductively coupled plasma reactor
ATE523616T1 (en) METHOD FOR VACUUM COMPRESSION MICROPLASMA OXIDATION AND DEVICE FOR CARRYING OUT THE METHOD
WO2006086407A3 (en) In situ plating and etching of materials covered with a surface film