CN105428195B - The component of plasma processing apparatus and the manufacturing method of component - Google Patents
The component of plasma processing apparatus and the manufacturing method of component Download PDFInfo
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- CN105428195B CN105428195B CN201510578768.1A CN201510578768A CN105428195B CN 105428195 B CN105428195 B CN 105428195B CN 201510578768 A CN201510578768 A CN 201510578768A CN 105428195 B CN105428195 B CN 105428195B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/01—Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/131—Wire arc spraying
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Problem of the present invention is that inhibiting the sprayed generation particle from yttrium fluoride.The solution of the present invention is to provide a kind of component being exposed in plasma processing apparatus in plasma.The component has base material and envelope.Base material is, for example, aluminum or aluminium alloy system.Acidproof aluminium film can be formed on the surface of base material.Envelope is formed by the spraying plating yttrium fluoride on the surface of the substrate including base material or the layer being set on the base material.The porosity in the envelope of the component is 4% hereinafter, the arithmetic average roughness (Ra) on the surface of the envelope is 4.5 μm or less.
Description
Technical field
Embodiments of the present invention are related to the component of plasma processing apparatus and the manufacturing method of the component.
Background technology
In the manufacture of the electronic equipments such as semiconductor equipment, to handled object application plasma etching.It is set with electronics
Standby miniaturization, the precision required by plasma etching improve year by year.In order to realize the high precision int of plasma etching, need
Inhibit the generation of particle.
The process container of plasma processing apparatus used in such plasma etching is made of metals such as aluminium.Place
The internal face of reason container is exposed in plasma.Therefore, in plasma processing apparatus, along the inner wall of process container
It is provided with the envelope of resistant to plasma system.As such envelope, usually using the film of yttrium oxide.
The envelope of yttrium oxide is once exposed in the plasma of fluorohydrocarbon system gas, will be with the fluorine in the plasma
Deng reactive species react.As a result, the envelope of yttrium oxide is consumed.Therefore, it attempts to constitute envelope by yttrium fluoride.As specially
The envelope of the record of sharp document 1, yttrium fluoride is formed by spraying plating.
Patent document 1：Japanese Unexamined Patent Publication 2013-140950 bulletins
Invention content
With the raising of the precision required by plasma etching, need to inhibit the micro- of former unquestioned size
Grain.Therefore, it is necessary to further suppress the sprayed generation particle from yttrium fluoride.
In a mode, a kind of component being exposed in plasma processing apparatus in plasma is provided.The portion
Part has base material and envelope.Base material is, for example, aluminum or aluminium alloy system.Alumite (Alumite) can be formed on the surface of base material
Film.Envelope is formed by the spraying plating yttrium fluoride on the surface of the substrate including base material or the layer being set on the base material.It should
The porosity in the envelope of component is 4% hereinafter, the arithmetic average roughness (Ra) on the surface of the envelope is 4.5 μm or less.It should
Arithmetic average roughness (Ra) is by JIS B06011994 defineds.
The envelope that base material is covered in above-mentioned component is that yttrium fluoride is sprayed, is the cause that the porosity is few, specific surface area is small
Close envelope.Therefore, because the surface alterations for being exposed in plasma and generating are reduced, the variation of processing performance reduces.Cause
This, can inhibit to generate particle from the envelope.
The component of one embodiment is also equipped between base material and envelope by by atmospheric pressure plasma metallikon shape
At yttrium oxide envelope constitute the first middle layer.Sometimes the high insulation breakdown electricity of part requirement in plasma processing apparatus
Pressure, but yttrium fluoride it is sprayed breakdown voltage it is relatively low.According to the embodiment, as the basal layer of envelope, setting
By sprayed the first middle layer constituted of yttrium oxide, thus can be improved on base material include envelope and the first middle layer,
Multilayer film with high breakdown voltage.
In one embodiment, envelope can be not formed on the region including edge of the first middle layer, and than
The region is formed in more in the inner part in first middle layer.The envelope of yttrium fluoride is relatively low for the closing force of base material.According to
The embodiment, envelope do not contact at its edge with base material, therefore can inhibit the stripping of edge envelope.
In one embodiment, component can be also equipped with the second middle layer between the first middle layer and envelope.One
In a embodiment, the second middle layer can be between the linear expansion coefficient and the linear expansion coefficient of envelope of the first middle layer
Linear expansion coefficient.According to the embodiment, the difference of the linear expansion coefficient because of the first middle layer and envelope can be inhibited to generate
The stripping of envelope.In one example, the second middle layer can be by the yttrium oxide that is formed by atmospheric pressure plasma metallikon
Stabilized zirconia is sprayed or the sprayed composition of forsterite.In another embodiment, the second middle layer can also
By the aluminium oxide formed by atmospheric pressure plasma metallikon is sprayed or gray oxide aluminium (Grey alumina) spraying plating
Envelope is constituted.According to the embodiment, it includes envelope, the first middle layer and the second middle layer, tool that can be provided on base material
There is the multilayer film of high breakdown voltage.
In one embodiment, component can be also equipped with other middle layers between base material and the first middle layer.Its
His middle layer for example can or gray oxide aluminium sprayed by the aluminium oxide formed by atmospheric pressure plasma metallikon
Sprayed composition.According to the embodiment, it includes envelope, the first middle layer and other middle layers that can be provided on base material
, multilayer film with high breakdown voltage.
On the other hand a kind of manufacturing method for the above-mentioned component being suitable for manufacturing plasma processing apparatus is provided.The manufacture
Method includes：The process that the surface of substrate to forming envelope by spraying plating carries out surface adjustment, the surface of the substrate includes base
The surface of material or be formed in the base material surface layer surface；Quilt is formed on the surface with by the spraying plating of yttrium fluoride
The process (hereinafter referred to as " envelope formation process ") of film.In envelope formation process, released in high-speed flame metallikon
The nozzle of the spray torch of plasma jet is released in the nozzle or atmospheric pressure plasma metallikon of the spray torch of flame
The direction of central axis, to the downstream separate position of the nozzle from the spray torch or the front end of the nozzle of spray torch position
It sets, supply includes the slurry of the yttrium fluoride particle with 1 μm or more 8 μm of average grain diameters below.
In this manufacturing method, due to forming envelope on the surface of substrate that have passed through surface adjustment, the envelope
Surface roughness reduce.Since such envelope has small specific surface area, cause because being exposed in plasma
Surface alterations reduce, the variation of processing performance reduces.Therefore, it is possible to inhibit to generate particle from the envelope.In addition, due to slurry
The average grain diameter of contained particle is 1 μm or more 8 μm hereinafter, the aggregation between particle therefore can be inhibited, and can be formed
Uniform envelope.Further, since the average grain diameter of particle contained by slurry is 1 μm or more 8 μm hereinafter, particle therefore can be formed
Between the high envelope of binding force.Furthermore, because supplying slurry to above-mentioned position, depositing materials can be inhibited to adhere to
In the nozzle inner walls of spray torch.As a result, it is possible to inhibit the generation of splash.Therefore, according to the manufacturing method, can be formed has
The low porosity and the envelope with small specific surface area, can form fine and close envelope.Further, since the envelope formed
It is fine and close, so having high section hardness.Therefore, according to the manufacturing method, being capable of providing can inhibit to generate particle
Envelope.
In the envelope formation process of an embodiment, using high-speed flame metallikon, the position for supplying slurry be
The position of the above 100mm of the front end 0mm ranges below of nozzle on the direction of above-mentioned central axis apart from spray torch.
In the envelope formation process of an embodiment, using atmospheric pressure plasma metallikon, the position of slurry is supplied
Set the position for the above 30mm of the front end 0mm ranges below for being nozzle on the direction along above-mentioned central axis apart from spray torch
It sets.
In one embodiment, nozzle of the central axis of the slurry supply nozzle of slurry relative to spray torch is supplied
Central axis, the spray torch nozzle front end side angulation be 45 degree or more 135 degree or less.
In the envelope formation process of an embodiment, the temperature of base material is set as 100 DEG C or more 300 DEG C of temperature below
Degree.Because yttrium fluoride has big coefficient of thermal expansion, when the spraying plating particle of yttrium fluoride is attached to the surface of substrate, the spray
It plates the rapid cooling of particle and solidifies.It is cracked on the envelope of formation sometimes as a result,.According to the embodiment, due to base material
Temperature be set as 100 DEG C or more 300 DEG C of temperature below, can inhibit to crack in envelope.
In one embodiment, manufacturing method, which can also be included between base material and envelope, forms the first of yttrium oxide
The process of middle layer.First middle layer can be formed by spraying plating.
In one embodiment, manufacturing method further includes being sheltered to the region including edge of the first middle layer
Process, can shelter process include edge region it is masked in the state of, execution envelope formation process.According to the party
Formula only can form envelope on the region of first middle layer retreated from the edge of the first middle layer.
In one embodiment, manufacturing method may further include and be formed between the first middle layer and above-mentioned envelope
The process of second middle layer.Second middle layer can be the line of the linear expansion coefficient and above-mentioned envelope with above-mentioned first middle layer
The layer of linear expansion coefficient between the coefficient of expansion.For example, the second middle layer can be sprayed by yttria stabilized zirconia
Or the sprayed composition of forsterite.Alternatively, the second middle layer can also or gray oxide aluminium spraying plating sprayed by aluminium oxide
Envelope is constituted.It can be formed by spraying plating by the second middle layer that any materials in these materials are constituted.
In one embodiment, manufacturing method can further include and form it between base material and the first middle layer
The process of his middle layer.Other middle layers can be sprayed by aluminium oxide or gray oxide aluminium is sprayed constitutes.By
Other middle layers that any materials in these materials are constituted can be formed by spraying plating.
In one embodiment, manufacturing method can further include forms the work of acidproof aluminium film on the surface of base material
Sequence.
The effect of invention
As described above, can inhibit to generate particle from the envelope of yttrium fluoride.
Description of the drawings
Fig. 1 is the figure of an example for indicating plasma processing apparatus.
Fig. 2 is the section of a part for the component for the plasma processing apparatus that amplification indicates that an embodiment is related to
Figure.
Fig. 3 is the section of a part for the component for the plasma processing apparatus that amplification indicates that another embodiment is related to
Figure.
Fig. 4 is the section of a part for the component for the plasma processing apparatus that amplification indicates that another embodiment is related to
Figure.
Fig. 5 is the flow chart for the manufacturing method for indicating that an embodiment is related to.
Fig. 6 is the figure of the product manufactured in each process for indicate manufacturing method shown in fig. 5.
Fig. 7 is the figure of the product manufactured in each process for indicate manufacturing method shown in fig. 5.
Fig. 8 is the figure for the high-speed flame metallikon for illustrating an embodiment.
Fig. 9 is the figure for the atmospheric pressure plasma metallikon for illustrating an embodiment.
Figure 10 is the chart for the breakdown voltage for indicating envelope.
Figure 11 is the chart for the breakdown voltage for indicating multilayer film.
Figure 12 is the chart of the relationship of the processing time for indicating corona treatment and the number of particle.
Symbol description
10 ... plasma processing apparatus, 30 ... upper electrodes, 34 ... electrode plates, 50 ... exhaust apparatus, 62 ... first is high
Frequency power, 100,100A, 100B, 100C ... component, 102 ... base materials, 104 ... envelopes, 106 ... acidproof aluminium films, 108 ... is intermediate
Layer, 110 ... middle layers, 112 ... middle layers, ML ... multilayer films, SA1, SA2 ... coating apparatus, SG1, SG2 ... spray torch, NG1,
NG2 ... nozzles, SN ... nozzles (slurry nozzle).
Specific implementation mode
Various embodiments are described in detail referring to the drawings.Wherein, in the drawings, to same or equivalent
Part mark identical symbol.
First, the plasma for applying the coating component with plasma resistance each embodiment being related to
An example of processing unit illustrates.Fig. 1 is the figure of an example for indicating plasma processing apparatus.Plasma shown in FIG. 1
Processing unit 10 is capacitive coupling plasma Etaching device, has process container 12.Process container 12 has substantially cylinder
Shape.Process container 12 is for example made of aluminium, implements anodized in inner wall surface thereof.The process container 12 is connect safely
Ground.
Substantially cylindric support portion 14 is provided on the bottom of process container 12.Support portion 14 is for example by insulating materials
It constitutes.Support portion 14 extends in process container 12 from the bottom of process container 12 along vertical direction.In addition, in process container 12
Inside it is provided with mounting table PD.Mounting table PD is supported by support portion 14.
Surface keeps wafer W to mounting table PD on it.Mounting table PD has lower electrode LE and electrostatic chuck ESC.Lower part
Electrode LE includes the first plate 18a and the second plate 18b.First plate 18a and the second plate 18b are constituted such as the metal by aluminium, are formed big
Cause disc-shape.Second plate 18b is arranged on the first plate 18a, is electrically connected with the first plate 18a.
It is provided with electrostatic chuck ESC on the second plate 18b.Electrostatic chuck ESC has between a pair of of insulating layer or insulating trip
Structure configured with the electrode as conductive film.The electrode of electrostatic chuck ESC is electrically connected via switch 23 with DC power supply 22.It should
Electrostatic chuck ESC adsorbs wafer W by the electrostatic force such as Coulomb force generated by the DC voltage from DC power supply 22.As a result,
Electrostatic chuck ESC can keep wafer W.
On the peripheral portion of the second plate 18b, configured with focusing in a manner of the edge and electrostatic chuck ESC that surround wafer W
Ring FR.The purpose that focusing ring FR is arranged is to improve the uniformity of etching.Focusing ring FR is by the material according to the film of etch target
The material suitably selected is constituted, such as can be made of quartz.
It is internally provided with refrigerant flow 24 in the second plate 18b.Refrigerant flow 24 constitutes thermoregulative mechanism.It is handled from being set to
The cooling unit of the outside of container 12 supplies refrigerant via piping 26a to refrigerant flow 24.It is supplied to the refrigerant of refrigerant flow 24
Cooling unit is returned via piping 26b.In this way, refrigerant is supplied to refrigerant flow 24 in a circulating manner.By controlling the refrigerant
Temperature, can control by the temperature of the electrostatic chuck ESC wafer Ws supported.
In addition, plasma processing apparatus 10 is provided with gas feed line road 28.Gas feed line road 28 will come from heat transfer
The heat-conducting gas of gas supply mechanism, such as He gas are supplied between the upper surface of electrostatic chuck ESC and the back side of wafer W.
In addition, plasma processing apparatus 10 is provided with the heater HT as heating element.Heater HT is for example buried
Enter in the second plate 18b.Heater HT is connect with heater power source HP.By electric from heater power source HP to heater HT supplies
Power can adjust the temperature of mounting table PD, can adjust the temperature for the wafer W being placed on mounting table PD.In addition, heater
HT can also be built in electrostatic chuck ESC.
In addition, plasma processing apparatus 10 has upper electrode 30.Upper electrode 30 is in the top of mounting table PD and is somebody's turn to do
Mounting table PD relative configurations.Lower electrode LE is substantially parallel arranged with upper electrode 30.These upper electrodes 30 with
Between lower electrode LE, the processing space S for carrying out corona treatment to wafer W is provided.
Upper electrode 30 is supported on the top of process container 12 by insulating properties cut-off component 32.In an embodiment
In, upper electrode 30 can be with the distance variable in the upper surface away from mounting table PD, the vertical direction i.e. away from chip mounting surface
Mode is constituted.Upper electrode 30 may include electrode plate 34 and electrode support 36.Electrode plate 34 is towards processing space S, the electricity
Pole plate 34 is provided with multiple gas discharge hole 34a.The electrode plate 34 is an example of the component with plasma resistance.
Electrode support 36 is can detachably to support the component of electrode plate 34, such as can be by the electric conductivity of aluminium etc.
Material is constituted.The electrode support 36 can have water-cooling structure.Electrode support 36 is internally provided with gas diffusion chamber
36a.From gas diffusion chamber 36a, the multiple gas through-flow hole 36b being connected to gas discharge hole 34a extend downwards.In addition,
Electrode support 36 forms the gas introduction port 36c, gas introduction port 36c that oriented gas diffusion chamber 36a imports processing gas
It is connect with gas supply pipe 38.
Gas supply pipe 38 is connect via valve group 42 and flow controller group 44 with gas source group 40.Gas source group 40 has
Multiple gas sources.Multiple gas sources are the sources of different types of gas.Valve group 42 includes multiple valves, and flow controller group 44 includes
Multiple flow controllers of mass flow controller etc..Multiple gas sources of gas source group 40 are respectively via the corresponding of valve group 42
Valve and the corresponding flow controller of flow controller group 44 are connect with gas supply pipe 38.
In addition, in plasma processing apparatus 10, deposition has been freely disposed along the inner wall handling of process container 12
Shielding part (deposition shield) 46.Deposition shield part 46 is also disposed at the periphery of support portion 14.Deposition shield part 46 is
For prevent process container 12 adhere to etch byproducts (deposition) component, be have plasma resistance component one
Example.
Process container 12 bottom side and be provided with exhaustion plate between support portion 14 and the side wall of process container 12
48.Exhaustion plate 48 can for example pass through the coating Y on aluminium2O3It is constituted Deng ceramics.In the lower section of the exhaustion plate 48 and locating
Reason container 12 is provided with exhaust outlet 12e.Exhaust outlet 12e is connect via exhaust pipe 52 with exhaust apparatus 50.Exhaust apparatus 50 has
Space in process container 12 can be decompressed to desired vacuum degree by the vacuum pump of turbomolecular pump etc..In addition, handling
The side wall of container 12 is provided with the carrying-in/carrying-out mouth 12g of wafer W, and carrying-in/carrying-out mouth 12g can be switched by gate valve 54.
In addition, plasma processing apparatus 10 also has the first high frequency electric source 62 and the second high frequency electric source 64.First high frequency
Power supply 62 is the power supply for the first RF power for generating plasma generation, generates the frequency, in one example of 27~100MHz
For the RF power of 40MHz.First high frequency electric source 62 is connect via adaptation 66 with lower electrode LE.Adaptation 66 is for making
The circuit of the output impedance of first high frequency electric source 62 and the input resistant matching of load-side (sides lower electrode LE).In addition, first
High frequency electric source 62 can be connect via adaptation 66 with upper electrode 30.
Second high frequency electric source 64 is the second RF power, the i.e. generation high-frequency bias generated for introducing ion to wafer W
The power supply of electric power, generate 400kHz~13.56MHz in the range of frequency, in one example be 3.2MHz high-frequency bias electric power.
Second high frequency electric source 64 is connect via adaptation 68 with lower electrode LE.Adaptation 68 is for making the defeated of the second high frequency electric source 64
Go out the circuit of impedance and the input resistant matching of load-side (sides lower electrode LE).
In the plasma processing apparatus 10, gas source from selected from multiple gas sources of gas source group 40 is to processing
Supply gas in container 12.Also, it is defined pressure by the space decompression in process container 12 by exhaust apparatus 50.This
Outside, by the RF power supplied by the first high frequency electric source 62, high-frequency electric field is generated, by the high-frequency electric field in process container 12
Interior generation plasma.The internal face for dividing the space in process container 12 is exposed in the plasma of generation.Therefore, right
Deposition shield part 46 and electrode plate 34 are implemented coating with plasma resistance.
Hereinafter, the various embodiments to the component with plasma resistance illustrate.Fig. 2 is that amplification indicates one
The sectional view of a part for the component for the plasma processing apparatus that embodiment is related to.Component 100 shown in Fig. 2 for example may be used
To be used as above-mentioned deposition shield part 46.
Component 100 has base material 102 and envelope 104.Base material 102 can be made of aluminium, aluminium alloy.For example, base material 102 is
The plate body of A5052.In addition, base material 102 can also be by aluminium oxide (Al2O3), silicon carbide, silica, silicon, stainless steel, carbon or it
Composite material (such as Si-SiC or aluminum oxide-silicon carbide) constitute.
In one embodiment, base material 102 may include the acidproof aluminium film 106 for being formed in one main surface side.It is acidproof
Aluminium film 106 is formed by the anodized of base material 102.In one embodiment, acidproof aluminium film 106 is made only in this
The surface portion in a part of region including edge of base material 102.
In addition, in one embodiment, an interarea of base material 102 has specified value surface roughness below.Such as
It is described afterwards, the surface roughness (arithmetic average roughness of the envelope formed on an interarea of base material 102：Ra) it is 4.5 μm.
The surface roughness of envelope can reflect the surface roughness of base material 102, therefore the surface roughness of base material 102 can be adjusted
Below specified value.For example, the arithmetic average roughness Ra of base material 102 can be adjusted to 4.5 μm or less.Wherein, arithmetic is flat
Equal roughness (Ra) is parameter as defined in JIS B06011994.
Envelope 104 is formed on base material 102.Envelope 104 is yttrium fluoride system, is formed by spraying plating.Envelope 104 has
0.01% or more 4% porosity below.In the envelope 104 of such porosity, interparticle cohesion is big, therefore can press down
System generates particle from the envelope 104.Wherein, the porosity is defined as the value measured by porosity assay method described below.
[porosity assay method]
In porosity assay method, the electric field releasing type scanning electron microscopy of Hitachi-Hightech corporations is used
Mirror SU8200.As determination condition, accelerating potential is set as 1kV, emitter electricity is set as 20 μ A, workpiece interval is set
For 8mm.Then, according to the sequential determination porosity of (1) below~(5).
(1) cut-out has tunicate initial sample.
(2) ion milling is utilized so that section is smoothed and is cleaned (with reference to the following the description about ion milling).
(3) multiplying power of electric field releasing type scanning electron microscope is set as 1000 times, focuses on section.
(4) electric field releasing type scanning electron microscope is set so that the brightness and contrast of obtained picture phase every time
Together, the backscattering charge pattern (BEI pictures) of section is obtained.
(5) image processing software (MITANI CORPORATION companies Win Roof V50) is used, it will with threshold value 175
BEI obtains bianry image as binaryzation.The area of air cap in bianry image is accounted for the area of the whole region of section
Ratio as the porosity.
[ion milling]
(1) sample is cut out
The sample of 1cm square is cut out from initial sample using accurate cutting machine.
(2) resin embedding
Epoxy resin is made, will be immersed in by film surface in the epoxy resin, vacuum defoamation is carried out.
(3) it grinds
Utilize water-fast pouncing paper (#1000) ground sample so that observation purpose portion with sample upper surface at a distance from be 100~
Range within 500 μm.
Utilize water-fast pouncing paper (#1000) ground sample so that observation purpose portion is 50 μm or so at a distance from machined surface.
Base part is ground using water-fast pouncing paper (#400), it is made to be parallel to sample upper surface.
(4) ion beam irradiates
Sample is positioned on device, relative to observation purpose portion, ion beam is vertically irradiated from sample upper surface, to disconnected
Face is processed.
(condition：Accelerating potential 6 [kV], discharge voltage 1.5 [kV], 0.07~0.1 [cm of gas flow3/ mi], the time 4 it is small
When)
In addition, envelope 104 has the surface roughness of 4.5 μm of arithmetic average roughness Ra below.Using in this way
Surface roughness envelope 104, the generation of particle can be inhibited.
In one embodiment, envelope 104 can have 10 μm or more 200 μm of film thickness below.Using with 10 μm
The envelope 104 of above film thickness, even if there are can prevent the envelope 104 under plasma environment if the consumption of the envelope 104
Substrate expose.Also, using the envelope 104 with 200 μm of film thickness below, it is able to maintain that the close of the envelope 104 and substrate
With joint efforts.
In one embodiment, can be only that the envelope 104 of single layer is formed directly on base material 102.In other realities
It applies in mode, such as shown in Fig. 2, can also be that the multilayer film ML comprising envelope 104 is formed on base material 102.
In the embodiment shown in figure 2, multilayer film ML also has middle layer 108 other than with envelope 104.In
Interbed 108 is made of yttrium oxide, is formed by the spraying plating of atmospheric pressure plasma spraying plating etc..In one embodiment, intermediate
Layer 108 on surface of the base material 102 without dirt and with the surface without dirt continuously a part of region of acidproof aluminium film 106 and
It is formed.That is, middle layer 108 is not formed on the region including edge of base material 102.
Here, the film of yttrium fluoride is 8.8MPa with respect to the closing force of base material 102, the film of yttrium oxide is with respect to base material 102
Closing force be 12.8MPa.Therefore, by the way that between base material 102 and envelope 104, there are middle layer 108, multilayer film can be improved
Closing forces of the ML with respect to base material 102.In addition, middle layer 108 for example can be with 3%~10% porosity.In addition, middle layer
108 can have 10 μm or more 200 μm of film thickness below.Using the middle layer 108 of such film thickness, it is able to maintain that above-mentioned close
With joint efforts.
In addition, the yttrium fluoride for constituting envelope 104 has lower breakdown voltage.And constitute the oxidation of middle layer 108
Yttrium has higher breakdown voltage.By making such middle layer 108 between envelope 104 and base material 102, Neng Gouti
Height includes the breakdown voltage of the multilayer film ML of the middle layer 108 and envelope 104.
In addition, in one embodiment, envelope 104 and 108 respective film thickness of middle layer can be 100 μm or more.Profit
With the multilayer film ML of envelope 104 and middle layer 108 including such film thickness, can also obtain even in a high temperature environment high
Breakdown voltage.
In one embodiment, on the region R1 including edge of the no layer 108 formed between of envelope 104, and shape
At on the region R2 than region R1 closer to inside.In the region R1 including edge, envelope is easy to happen in spraying plating
Rupture, therefore by not forming envelope 104 in region R1, the rupture of envelope 104 can be prevented.
Fig. 3 is the section of a part for the component for the plasma processing apparatus that amplification indicates that another embodiment is related to
Figure.Component 100A shown in Fig. 3 can for example be used as above-mentioned electrode plate 34.Therefore, the base of component 100A shown in Fig. 3
Hole HL corresponding with gas discharge hole 34a is formed on material 102.Hole HL has in its adjacent open end to be got over closer to the open end
The conical by its shape to broaden.
On the base material 102 of component 100A, formed in the surface portion and a part of region connected to it for being divided into hole HL
There is acidproof aluminium film 106.In addition, in component 100A, middle layer 108 is formed on the surface without dirt of base material 102 and alumite
On film 106.In addition, in component 100A, middle layer 108 extends to the inside of hole HL.In addition, envelope 104 is near the HL of hole
It is not formed, i.e., is not formed on the region R1 including edge of middle layer 108, and the flat site R2 of layer formed between 108
On.In the region R1 of component 100A, the rupture of envelope is easy to happen in spraying plating, therefore by not forming quilt in region R1
Film can prevent the rupture of envelope 104.
Referring to Fig. 4, the component being related to another other embodiment illustrates.Fig. 4 be amplification indicate it is another its
The sectional view of a part for the component for the plasma processing apparatus that his embodiment is related to.The component shown in (a) of Fig. 4
In 100B, multilayer film ML also has middle layer 110.Middle layer 110 is set between envelope 104 and middle layer 108.Middle layer
110 can be formed by spraying plating.Middle layer 110 can for example have 10 μm or more 500 μm of film thickness below for its adaptation.
In one example, middle layer 110 is made of yttria stabilized zirconia (YSZ) or forsterite.Middle layer
110 can be formed by atmospheric pressure plasma metallikon.Here, the linear expansion coefficient of envelope 104 is about 14 × 10- 6K- 1.This
Outside, the coefficient of thermal expansion of middle layer 108 is about 7.3 × 10- 6K- 1.In addition, the linear expansion coefficient of YSZ is 9 × 10- 6K- 1, magnesium olive
The linear expansion coefficient of olive stone is 10 × 10- 6K- 1.That is, having the line of envelope 104 by the middle layer 110 that YSZ or forsterite are constituted
Linear expansion coefficient between the coefficient of expansion and the linear expansion coefficient of middle layer 108.Therefore, by making such middle layer 110 be situated between
Between envelope 104 and middle layer 108, caused by the difference that the linear expansion coefficient because of envelope 104 Yu middle layer 108 can be inhibited
The stripping of envelope 104.
In another example, middle layer 110 can or gray oxide aluminium sprayed by aluminium oxide (aluminium oxide-is about
2.5% titanium dioxide) sprayed composition.Using such middle layer 110, it includes envelope that can be provided on base material 102
104, middle layer 108 and middle layer 110, multilayer film ML with high breakdown voltage.
In the component 100C shown in (b) of Fig. 4, multilayer film ML also has middle layer 112.Middle layer 112 is between base material
Between 102 and middle layer 108.Middle layer 112 can for example have 10 μm or more 500 μm of film thickness below for its adaptation.
Middle layer 112 can or gray oxide aluminium sprayed by aluminium oxide (about 2.5% titanium dioxide of aluminium oxide -) constitute.Among this
Layer 112 can be formed by atmospheric pressure plasma metallikon.Using such middle layer 112, can be provided on base material 102
Multilayer film ML including envelope 104, middle layer 108 and middle layer 112, with high breakdown voltage.
The manufacturing method of the component to being suitable for manufacturing above-mentioned each embodiment illustrates below.Fig. 5 is to indicate one
The flow chart for the manufacturing method that a embodiment is related to.Fig. 6 and Fig. 7 is in each process for indicate manufacturing method shown in Fig. 5
The figure of the product of manufacture.
Manufacturing method PM shown in fig. 5 is since process S1.In process S1, the anodized of base material 102 is carried out
(Alumite) (anodized) is handled.In process S1, as shown in (a) of Fig. 6, mask MK1 is set in base material 102.It covers
Mould MK1 is arranged in a manner of only exposing the region using alumite on base material 102.Then, it carries out anodized
Processing forms acidproof aluminium film 106 thus as shown in (b) of Fig. 6.
Then, as shown in figure 5, carrying out process S2.In process S2, the surface adjustment on 102 surface of base material is carried out.Process S2
Surface adjustment may be used utilize ciamond grinder, SiC grinding stones, diamond film etc. surface adjustment or polished surface tune
It is whole.Alternatively, CO may be used in the surface adjustment of process S22Injection uses the injection of aluminium oxide or SiC.It is right in process S2
The surface of base material 102 carries out surface adjustment so that surface roughness (arithmetic average roughness Ra) in single layer Ra 4.5 μm with
Under, Ra is at 5.5 μm or less when with middle layer.
Middle layer is formed in next process S3.When making component 100 and component 100A, middle layer 108 is formed.
When making component 100B, middle layer 108 and middle layer 110 are formed.When making component 100C, middle layer 112 is formed in
Interbed 108.In the formation of each middle layer of process S3, carried out using the slurry of the particle comprising the material for constituting each middle layer
Spraying plating.Spraying plating can use the various spraying platings of atmospheric pressure plasma spraying plating (APS) method or high-speed flame spraying plating (HVOF) method etc.
Method.Wherein, when forming middle layer 108, the slurry for including 10 μm of grain size or more 35 μm of particles below can be used.Including in this way
Grain size particle slurry can with low cost prepare.
The product made when the middle layer 108 for indicating forming member 100 in (a) and (b) of Fig. 7.In an embodiment party
In formula, as shown in (a) of Fig. 7, the mask MK2 to form the exposing of the region of middle layer is made to be formed on base material 102.Then, pass through
Spraying plating forms middle layer.For example, as shown in (b) of Fig. 7, middle layer 108 is formed by spraying plating.
In subsequent process S4, surface adjustment is carried out to the substrate of the middle layer as top layer.The surface of process S4
Adjustment may be used to be adjusted using the surface adjustment of ciamond grinder, SiC grinding stones, diamond film etc. or polished surface.Or
CO may be used in the surface adjustment of person, process S42Injection uses the injection of aluminium oxide or SiC.In process S4, to substrate
Surface carry out surface adjustment so that surface roughness (arithmetic average roughness Ra) be 4.5 μm or less.In addition, in envelope 104
In the case of being formed directly on base material 102, process S3 and process S4 are not needed.
In subsequent process S5, envelope 104 is formed.In process S5, as shown in (c) of Fig. 7, so as to be formed on
The mode that the region (such as region R2) of the substrate of envelope 104 is exposed forms mask MK3.Then, by using containing yttrium fluoride
The spraying plating of the slurry of particle forms envelope 104 as shown in (d) of Fig. 7.
Fig. 8 is the figure for the high-speed flame metallikon for illustrating an embodiment.Fig. 9 is the air for illustrating an embodiment
Press the figure of plasma spraying method.The spraying plating of process S5 can use high-speed flame spraying plating (HVOF) method shown in Fig. 8 or Fig. 9 institutes
Atmospheric pressure plasma spraying plating (APS) method shown.
As shown in figure 8, forming coating apparatus SA1 used in the HVOF method of envelope 104 has spray torch SG1 and slurry
Supply nozzle SN.Spray torch SG1 has the combustion container portion BC for dividing combustion chamber BS, the spray being connect with combustion container portion BC
Mouth NG1 and igniter ID.In spray torch SG1, the gas of oxygen and fuel containing high pressure is fed into combustion chamber BS, igniting
Device ID lights a fire the gas.Then, the flame (burning is scorching) generated in combustion chamber BS is concentrated by nozzle NG1, from the nozzle
NG1 releases flame.Slurry is supplied from nozzle SN to the flame released in this way, to make the granulated in slurry become melting or half
Molten condition, the spraying plating on the product WP for need to form envelope 104.
When forming envelope 104 by HVOF method, as shown in figure 8, in the central axis of the nozzle NG1 along spray torch SG1
On the direction of AX1, the front position of position or nozzle NG1 to the front end far from nozzle NG1 supplies slurry.That is, from nozzle
The distance X of the front end of NG1 to the supply position of slurry is set as 0mm or more.
As shown in figure 9, forming coating apparatus SA2 used in the APS methods of envelope 104 has spray torch SG2 and slurry
The nozzle SN of supply.Spray torch SG2, which has, to be divided the container portion PC of plasma generating space PS, is connect with container portion PC
Nozzle NG2 and electrode ET.Container portion PC is made of insulator, and nozzle NG2 is made of electric conductor.Electrode ET is set to container portion
In PC.In spray torch SG2, working gas is fed into container portion PC, applies voltage between electrode ET and nozzle NG2.
The plasma of working gas is generated as a result, which releases from nozzle NG2.From nozzle SN to release in this way it is equal from
Daughter supplies slurry, to make the granulated in slurry become melting or semi-molten state, to the product for needing to form envelope 104
The upper spraying platings of WP.
When forming envelope 104 by APS methods, as shown in figure 9, in the central axis of the nozzle NG2 along spray torch SG2
On the direction of AX1, the front position of position or nozzle NG2 to the front end far from nozzle NG2 supplies slurry.That is, from nozzle
The distance X of the front end of NG2 to the supply position of slurry is set as 0mm or more.
In addition, in using the process S5 of HVOF method and any means of APS methods, slurry can include of yttrium fluoride
Grain, decentralized medium and organic system dispersant.Decentralized medium is water or alcohol.Fluorine is contained with 5~40% mass ratio in the slurry
Change the particle of yttrium.In addition, the grain size of the particle of yttrium fluoride is 1 μm or more 8 μm or less.Wherein, the average grain diameter of particle is defined as
The grain size measured by laser diffraction scattering method (micro-track methods).
Envelope 104 is formed by spraying plating described above, then, removes mask MK2 and mask MK3, completes component, manufacture
Method PM terminates.
In manufacturing method PM, envelope 104, therefore the envelope are formed on the surface of the substrate adjusted by surface
104 surface roughness reduces.Such envelope 104 has small specific surface area, therefore can inhibit to generate from the envelope 104
Particle.In addition, the average grain diameter of particle contained by slurry be 1 μm or more 8 μm hereinafter, particle therefore can be inhibited between
Aggregation, forms uniform envelope 104.In addition, the average grain diameter of particle contained by slurry is 1 μm or more 8 μm hereinafter, therefore can
Form the high envelope of an interparticle cohesion.Furthermore, due to supplying slurry to above-mentioned position, so spraying plating can be inhibited
Material is attached to the nozzle inner walls etc. of spray torch.As a result, it is possible to inhibit to generate splash.Therefore, manufacturing method PM, energy are utilized
Enough envelopes formed with low-porosity, with small specific surface product, i.e. fine and close envelope 104.Using such envelope 104, because
It is exposed to surface alterations caused by plasma to reduce, the variation of processing performance reduces.Therefore, the manufacturing method is utilized
PM is capable of providing the envelope for the generation that can inhibit particle.
When using HVOF method in the process S5 of an embodiment, the position for supplying slurry is along central axis
The position of the above 100mm of the front end 0mm ranges below of nozzle NG1 on the direction of AX1 apart from spray torch SG1.That is, Fig. 8 institutes
The X shown is the distance in the range of 0mm or more 100mm or less.In addition, using APS methods in the process S5 of an embodiment
When, the position that supplies slurry be the front end 0mm of nozzle NG2 on the direction along central axis AX1 apart from spray torch SG2 with
The position of upper 30mm ranges below.That is, X shown in Fig. 9 is the distance in the range of 0mm or more 30mm or less.
In addition, metallikon either HVOF method and APS methods employed in process S5 is any, Fig. 8 and shown in Fig. 9
Angle, θ is the angle in 0 degree or 45 degree or more 135 degree or less of range.Wherein, angle, θ is the central axis of nozzle SN
AX2 relative to central axis AX1, spray torch nozzle front end side angulation.
In addition, in the process S5 of an embodiment, in spraying plating, include the temperature setting of the product WP of base material 102
For 100 DEG C or more 300 DEG C of temperature below.Since yttrium fluoride has big coefficient of thermal expansion, so the spraying plating particle of yttrium fluoride
When being attached to the surface of substrate, the rapid cooling of spraying plating particle and solidify.The envelope formed sometimes as a result, cracks.According to
The embodiment, since the temperature of the product WP including base material 102 is set as 100 DEG C or more 300 DEG C of temperature below, energy
Enough inhibit to crack in envelope 104.
In addition, when using HVOF method in process S5, oxygen combustion is than being set as theoretical oxygen more required than fuel completely burned
It fires and fires ratio than high oxygen.Thereby, it is possible to prevent from generating dust due to imperfect combustion, can prevent from being mixed into envelope 104
Dust.
More than, various embodiments are illustrated, but be not limited to above-mentioned embodiment, may be constructed various changes
Shape mode.For example, being not limited to capacitance coupling using the plasma processing apparatus of the above-mentioned component with plasma resistance
The plasma processing apparatus of mould assembly.The above-mentioned component with plasma resistance can be applied to inductive type it is equal from
Daughter processing unit or by microwave generate plasma plasma processing apparatus etc. any type of plasma
Processing unit.
Hereinafter, being illustrated to the experiment for evaluating manufacturing method PM and envelope 104 and carrying out.
Evaluation ＞s of the ＜ about X and θ in the spraying plating of the process S5 of manufacturing method PM
Using HVOF method and APS methods, Fig. 8 and X shown in Fig. 9 and θ are made various changes, make the spraying plating of yttrium fluoride
Envelope.The slurry of the yttrium fluoride particle for the average grain diameter for containing 1.5 μm with 35% mass ratio is used when making sprayed.This
Outside, in spraying plating, by spraying plating object, include that the temperature of product of base material is set as 250 DEG C.
Then, it is based on assessment item described below, sprayed is evaluated to manufactured.Wherein, it is commented below
It is so-called " after corona treatment " in valence project, refer to filling the sample configuration after sprayed formation in corona treatment
It sets in 10, into process container 12, supply includes CF4, Ar and O2Gas, the RF power of the first high frequency electric source 62 is set as
1500W, the meaning after the exposure that keeps sample sprayed in resulting plasma 10 hours.
＜ assessment items ＞
[consumption]
Using step difference meter, measure between the sprayed masked region of sample and not masked region etc. from
Treated that step difference is judged to consuming when confirming the step difference of sprayed film thickness or more for daughter.
[rupture crackle]
It is evaluated as " having rupture " in the apparent strip of sprayed generation or latticed crackle by Appearance Visual
Or " having crackle ".In addition, the SEM observations by sprayed section see that is penetrated through on sprayed thickness direction splits
Line or when seeing that length is 30 μm or more of continuous crackle, is determined as " having rupture " or " having crackle ".
[stripping]
When being clearly visible sprayed stripping by Appearance Visual or in the sprayed gaps visible between substrate
When, it is determined as sprayed stripping.In addition, in the SEM observations of sprayed section, it can at sprayed and substrate interface
When seeing that length is 50 μm or more of continuous gap, it is determined as sprayed stripping.
[adhesive rate]
Calculating finds out ratio of the sprayed weight relative to the weight of used particle, which is 1% or less
When, it is determined as " adhesive rate is low ".
[attachment of the material to the nozzle of spray torch]
By the Appearance Visual of the near exit of the inner wall and nozzle of the nozzle of spray torch, spray torch attachment is being observed
When having the particle of melting, it is judged as that particle fusion is adhered to.
[particle evaluation]
Sprayed upper placement carbon ribbon after plasma processing loads the polytetrafluoroethyl-ne of 26g weight on the carbon ribbon
The hammer of alkene.Then, after removing hammer, carbon ribbon is removed, SEM observations are carried out to the carbon ribbon.Then, the area for calculating transfer object accounts for
The ratio of the entire area of carbon ribbon in SEM pictures, as transferring rate.Then, with than being set with X=5mm, θ=90 degree
Fixed, big using the slurry of the yttrium fluoride particle containing 50 μm of average grain diameter transferring rate sprayed made of APS methods
In the case of transferring rate, the sprayed of evaluation object is determined as " particle is bad ".
Table 1 indicates the value of X and θ and manufactured sprayed evaluation result.Wherein, in evaluation result, " good "
Mean sprayed to all have good characteristic in above-mentioned whole assessment item.
[table 1]
As shown in table 1, in HVOF method, when X is 130mm, it is determined as " particle is bad ".In addition, in HVOF method, X is
When negative value, the melting attachment of particle is observed in the nozzle inner walls of spray torch.Furthermore, it is possible to confirm in HVOF method, X 0mm
When the above 100mm, it can obtain good sprayed.In addition, in HVOF method, when θ is 30 degree, it is determined as " adhesive rate
It is low ".In addition, when θ is 150 degree, the melting attachment of particle is observed near the jet expansion of spray torch.Furthermore, it is possible to really
Recognize when θ is 45 degree or more 135 degree or less, can be formed good sprayed.
In addition, in APS methods, when X is 40mm, it is determined as " particle is bad ".In addition, when X is negative value, particle is observed
Melting is attached to the nozzle of spray torch.Furthermore, it is possible to when confirming that X is 0mm or more 30mm or less, good spraying plating quilt can be formed
Film.In addition, in APS methods, when θ is 30 degree, it is determined as " adhesive rate is low ".In addition, when θ is 150 degree, go out in the nozzle of spray torch
The melting attachment of particle is observed near mouthful.Therefore, it when can be confirmed that θ is 45 degree or more 135 degree or less, can be formed good
It is sprayed.
Evaluation ＞s of the ＜ about the temperature of the base material in the spraying plating of the process S5 of manufacturing method PM
Using HVOF method and APS methods, the temperature of the product including base material is made various changes, the spray of yttrium fluoride is made
Plate envelope.The slurry of the yttrium fluoride particle for the average grain diameter for containing 1.5 μm with 35% mass ratio is used when making sprayed.
In addition, in HVOF method, X=50mm, θ=90 degree are set.In APS methods, X=15mm, θ=90 degree are set.Then, by above-mentioned
Assessment item crackle and base material deformation viewpoint, sprayed evaluated to manufactured.Evaluation knot is indicated in table 2
Fruit.
[table 2]
| Base material temperature (DEG C) | Evaluation result |
| 350 | There is no crackle but substrate deformation is big |
| 300 | There is no crackle, base material without deformation |
| 250 | There is no crackle, base material without deformation |
| 100 | There is no crackle, base material without deformation |
| 48 | There is crackle |
As shown in table 2, sprayed to crack when including the temperature of the product of base material is 48 DEG C, which is 350 DEG C
When, base material generates larger deformation.In addition, when the temperature is 100 DEG C or more 300 DEG C or less, does not crack, base does not also occur
The deformation of material.It is possible thereby to when base material temperature when confirming spraying plating is 100 DEG C or more 300 DEG C or less, sprayed do not generate is split
The deformation of base material does not occur yet for line.
Evaluation ＞s of the ＜ about the grain size of the particle in the slurry in the spraying plating of the process S5 of manufacturing method PM
Using HVOF method and APS methods, the average grain diameter of yttrium fluoride particle is made various changes, the spray of yttrium fluoride is made
Plate envelope.The slurry for containing yttrium fluoride particle with 35% mass ratio is used when making sprayed.In addition, in HVOF method
In, set X=50mm, θ=90 degree.In APS methods, X=15mm, θ=90 degree are set.In addition, by the product including base material
Temperature is set as 250 DEG C.Then, it according to above-mentioned assessment item, sprayed is evaluated to manufactured.In addition, finding out system
At the sprayed porosity and film thickness.Evaluation result is indicated in table 3.
[table 3]
| Average grain diameter (μm) | The porosity (%) | Film thickness (μm) | Evaluation result |
| 15 | 4.4 | 130 | Particle is bad |
| 8 | 4 | 130 | Well |
| 4.2 | 2.5 | 120 | Well |
| 1.5 | 1.8 | 130 | Well |
| 1 | 0.2 | 130 | Well |
| 0.82 | 1.5 | 120 | Generate rupture |
| 1.5 | 1.8 | 250 | Stripping |
| 1.5 | 1.8 | 200 | Well |
| 1.5 | 1.8 | 10 | Well |
| 1.5 | 1.8 | 5 | Consumption |
As shown in table 3, when the average grain diameter of the particle in slurry is 15 μm, it is determined as " particle is bad ", when being 0.82 μm,
It is sprayed to observe rupture.In addition, when average grain diameter is 1 μm or more 8 μm or less, can obtain good sprayed.By
When this can be confirmed that the average grain diameter of the particle in slurry is 1 μm or more 8 μm or less, it can be formed good sprayed.This
Outside, when the manufactured sprayed porosity is 4.4%, it is determined as " particle is bad ", when the porosity is 4% or less, without true
It is bad to recognize particle.Thus, it is possible to when confirming that the porosity is 4% or less, the generation of particle can be inhibited.In addition, manufactured spray
When the film thickness for plating envelope is 5 μm, it is determined as that the consumption after corona treatment is big.In addition, manufactured sprayed film thickness is
At 250 μm, stripping is observed.It is possible thereby to confirm sprayed film thickness be 10 μm or more 200 μm or less when, even if there are because
The consumption that corona treatment generates, is also able to maintain that stripping that is sprayed, and can preventing sprayed.
Evaluation ＞s of the ＜ about surface roughness
By adjusting the surface roughness of substrate, the spraying plating quilt of the yttrium fluoride with different surface roughnesses is made
Film.Wherein, spraying plating uses HVOF method.In addition, spraying plating uses the yttrium fluoride for the average grain diameter for containing 1.5 μm with 35% mass ratio
The slurry of particle.In addition, in HVOF method, X=50mm, θ=90 degree are set.Then, the particle of above-mentioned assessment item is carried out
Evaluation is determined as " particle is bad " when Ra is 4.8 μm, and when Ra is 4.5 μm and 3.5 μm, it is bad that particle is not observed.
It is possible thereby to confirm if it is being the sprayed of 4.5 μm of surface roughnesses below with Ra, then it can inhibit the production of particle
It is raw.
Evaluation ＞s of the ＜ about breakdown voltage
The envelope of the single layer of yttrium fluoride is made on base material, and the film thickness of the envelope is made various changes.In addition,
The multilayer film of the envelope of the middle layer for 100 μm of film thickness for including yttrium oxide and 100 μm of film thickness of yttrium fluoride is made on base material.
Then, change temperature, measure the manufactured envelope of single layer and the breakdown voltage of multilayer film.Figure 10 indicates the envelope of single layer
Breakdown voltage.In Fig. 10, vertical pivot is breakdown voltage, and the numerical value of the epimere indicated along horizontal axis is the envelope of single layer
Film thickness (μm), the numerical value of hypomere is the temperature (DEG C) of envelope when measuring breakdown voltage.Wherein, " RT " indicates room temperature.
In addition, Figure 11 indicates the breakdown voltage of multilayer film.In fig. 11, vertical pivot is breakdown voltage, is indicated along horizontal axis
Numerical value is the temperature (DEG C) of multilayer film when measuring breakdown voltage.
As shown in Figure 10, it can be confirmed that film thickness possessed by the envelope of the single layer of yttrium fluoride is bigger, possessed insulation
Breakdown voltage is higher, but breakdown voltage reduces in the environment of high-temperature.As described in Figure 11, it can be confirmed by making 100 μ
The middle layer of the yttrium oxide of m film thickness is between envelope and base material, even if can inhibit multilayer if in the environment of high-temperature
The reduction of the breakdown voltage of film.
＜ is in including having the plasma processing apparatus of envelope and the electrode plate of middle layer 34, at plasma
Manage the evaluation ＞ of the number of the particle generated
Prepare plasma processing apparatus 10 (hereinafter referred to as " plasma processing apparatus 10 with envelope 1 "), it is such
Gas ions processing unit 10 has electrode plate 34 (with reference to the component 100A of Fig. 3), which has on the base material of aluminum
The middle layer for the yttrium oxide that 150 μm of film thickness has 50 μm of film thickness, surface roughness (arithmetic average roughness on the intermediate layer
Ra) 1.43 μm, the envelope (hereinafter referred to as " envelope 1 ") of the yttrium fluoride of the porosity 2.39%, in the plasma processing apparatus
Chip is loaded on 10 mounting table PD, carries out corona treatment.In corona treatment, into process container 12 always to flow
Amount 425sccm supplies contain C4F8Gas, C4F6Gas, CF4Gas, Ar gases, O2Gas and CH4The mixed gas of gas, will
Total electric power of the RF power of the RF power of first high frequency electric source 62 and the second high frequency electric source 64 is set as 5000W.Then,
Find out the relationship of the number of the particle generated on the processing time and chip of corona treatment.Wherein, the metering of particle number
In, using the Surfscan SP2 of KLA-Tencor corporations, measure the number of the particle of 45nm dimensions above.
In addition, prepare plasma processing apparatus 10 (hereinafter referred to as " plasma processing apparatus 10 with envelope 2 "),
The plasma processing apparatus 10 has electrode plate 34, which has the middle layer of the yttrium oxide of 150 μm of film thickness,
Yttrium fluoride with 50 μm of film thickness, 5.48 μm of surface roughness (arithmetic average roughness Ra), the porosity 5.21% in middle layer
The envelope (hereinafter referred to as " envelope 2 ") of system, loads chip on the mounting table PD of the plasma processing apparatus 10, carries out and make
The same corona treatment of corona treatment when with plasma processing apparatus with envelope 1.Then, with use tool
The case where having the plasma processing apparatus of envelope 1 is same, finds out and is generated on the processing time and chip of corona treatment
The relationship of the number of particle.
The relationship of the processing time of the graph representation corona treatment of Figure 12 and the number of particle.In fig. 12, horizontal axis
Indicate that the processing time (h) of corona treatment, vertical pivot indicate the number of particle.In addition, the solid line in chart is indicated using tool
In the regression straight line of the number of the particle of each generation of multiple processing times when having a plasma processing apparatus 10 of envelope 1,
Dotted line in chart indicates each generation when use has the plasma processing apparatus 10 of envelope 2 in multiple processing times
The regression straight line of the number of particle.As shown in figure 12, due to plasma in the plasma processing apparatus 10 with envelope 1
Handle generate particle number, in the plasma processing apparatus 10 with envelope 2 due to corona treatment generate
The number of particle compare, it is quite few.I.e., it is possible to confirm using the plasma processing apparatus for having following electrode plate 34,
Can inhibit the generation of the particle caused by corona treatment, the electrode plate 34 have with 4% porosity below and
The envelope of 4.5 μm of surface roughnesses (arithmetic average roughness Ra) below.
Claims (11)
1. a kind of manufacturing method of the component of plasma processing apparatus, which is characterized in that including：
The process that the surface of substrate to forming envelope by spraying plating carries out surface adjustment, the surface of the substrate includes the table of base material
Face or be formed in the base material surface layer surface；With
By the spraying plating of yttrium fluoride, the process for forming envelope on said surface,
In the process for forming the envelope, using high-speed flame metallikon or atmospheric pressure plasma metallikon,
In the process for forming the envelope, released in along high-speed flame metallikon the spray torch of flame nozzle or
The direction that the central axis of the nozzle of the spray torch of plasma jet is released in atmospheric pressure plasma metallikon, to from the spray
The front position of the nozzle of the downstream separate position or the spray torch of nozzle of rifle is plated, supply is comprising with 1 μm or more 8
The slurry of the yttrium fluoride particle of μm average grain diameter below,
High-speed flame metallikon is used in the process for forming the envelope, the position for supplying the slurry is along in described
The position of the above 100mm of the front end 0mm ranges below of nozzle described in distance on the direction of mandrel line, alternatively, described in formation
Atmospheric pressure plasma metallikon is used in the process of envelope, the position for supplying the slurry is along the central axis
The position of the above 30mm of the front end 0mm ranges below of nozzle described in distance on direction,
In the process for forming the envelope, the central axis of slurry supply nozzle of the slurry is supplied relative to the spray
Plate rifle nozzle the central axis, the spray torch nozzle front end side angulation be 45 degree or more 135 degree with
Under.
2. manufacturing method as described in claim 1, it is characterised in that：
In the process for forming the envelope, the temperature of the base material is set as 100 DEG C or more 300 DEG C of temperature below.
3. manufacturing method as described in claim 1, it is characterised in that：
It further include the process for the first middle layer that yttrium oxide is formed between the base material and the envelope.
4. manufacturing method as claimed in claim 3, it is characterised in that：
Further include the process sheltered to the region including edge of first middle layer,
In the state that the region including the edge is masked in the masking process, execution forms the described of the envelope
Process.
5. manufacturing method as claimed in claim 3, it is characterised in that：
It further include the process that the second middle layer is formed between first middle layer and the envelope.
6. manufacturing method as claimed in claim 5, it is characterised in that：
Second middle layer has between the linear expansion coefficient and the linear expansion coefficient of the envelope of first middle layer
Linear expansion coefficient.
7. manufacturing method as claimed in claim 6, it is characterised in that：
Second middle layer is sprayed or forsterite is sprayed constitutes by yttria stabilized zirconia.
8. manufacturing method as claimed in claim 5, it is characterised in that：
Second middle layer is sprayed or gray oxide aluminium is sprayed constitutes by aluminium oxide, and the gray oxide aluminium is oxygen
Change -2.5% titanium dioxide of aluminium.
9. manufacturing method as claimed in claim 3, it is characterised in that：
It further include the process that other middle layers are formed between the base material and first middle layer.
10. manufacturing method as claimed in claim 9, it is characterised in that：
The others middle layer is sprayed or gray oxide aluminium is sprayed constitutes by aluminium oxide, and the gray oxide aluminium is
- 2.5% titanium dioxide of aluminium oxide.
11. such as manufacturing method according to any one of claims 1 to 10, it is characterised in that：
It further include the process for forming acidproof aluminium film on the surface of the base material.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-188695 | 2014-09-17 | ||
| JP2014188695 | 2014-09-17 | ||
| JP2015-129940 | 2015-06-29 | ||
| JP2015129940A JP2016065302A (en) | 2014-09-17 | 2015-06-29 | Component for plasma treatment apparatus and manufacturing method of the component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428195A CN105428195A (en) | 2016-03-23 |
| CN105428195B true CN105428195B (en) | 2018-07-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510578768.1A Active CN105428195B (en) | 2014-09-17 | 2015-09-11 | The component of plasma processing apparatus and the manufacturing method of component |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20160076129A1 (en) |
| CN (1) | CN105428195B (en) |
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| WO2018012454A1 (en) | 2016-07-14 | 2018-01-18 | 信越化学工業株式会社 | Slurry for suspension plasma spraying, method for forming rare earth acid fluoride sprayed film, and spraying member |
| TWM563652U (en) | 2016-10-13 | 2018-07-11 | 美商應用材料股份有限公司 | Chamber components for use in plasma processing apparatuses and apparatuses comprising the same |
| CN106319420A (en) * | 2016-11-03 | 2017-01-11 | 中国科学院兰州化学物理研究所 | Method for improving bonding strength of thermal spraying ceramic coating on 7075 aluminum alloy surface |
| JP6984126B2 (en) * | 2016-12-27 | 2021-12-17 | 東京エレクトロン株式会社 | Manufacturing method of gas supply device, plasma processing device and gas supply device |
| US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| JP6879878B2 (en) * | 2017-09-28 | 2021-06-02 | 三菱重工業株式会社 | Thermal spray nozzle and plasma spraying device |
| TWI709653B (en) * | 2018-02-15 | 2020-11-11 | 日商京瓷股份有限公司 | Component for plasma processing device and plasma processing device with same |
| JP7122854B2 (en) * | 2018-04-20 | 2022-08-22 | 株式会社日立ハイテク | Plasma processing apparatus and member for plasma processing apparatus, or method for manufacturing plasma processing apparatus and method for manufacturing member for plasma processing apparatus |
| US11328906B2 (en) * | 2018-07-30 | 2022-05-10 | Toto Ltd. | Electrostatic chuck |
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Also Published As
| Publication number | Publication date |
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| US20170233860A1 (en) | 2017-08-17 |
| CN105428195A (en) | 2016-03-23 |
| US20160076129A1 (en) | 2016-03-17 |
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