DE3785737T2 - Geraet zur ausbesserung eines gemusterten films. - Google Patents

Geraet zur ausbesserung eines gemusterten films.

Info

Publication number
DE3785737T2
DE3785737T2 DE8787118954T DE3785737T DE3785737T2 DE 3785737 T2 DE3785737 T2 DE 3785737T2 DE 8787118954 T DE8787118954 T DE 8787118954T DE 3785737 T DE3785737 T DE 3785737T DE 3785737 T2 DE3785737 T2 DE 3785737T2
Authority
DE
Germany
Prior art keywords
repairing
patterned film
patterned
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787118954T
Other languages
English (en)
Other versions
DE3785737D1 (de
Inventor
Osamu Hattori
Anto Yasaka
Yoshitomo Nakagawa
Mitsuyoshi Sato
Sumio Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26867887A external-priority patent/JPH0661001B2/ja
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of DE3785737D1 publication Critical patent/DE3785737D1/de
Application granted granted Critical
Publication of DE3785737T2 publication Critical patent/DE3785737T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
DE8787118954T 1986-12-26 1987-12-21 Geraet zur ausbesserung eines gemusterten films. Expired - Fee Related DE3785737T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31526386 1986-12-26
JP26867887A JPH0661001B2 (ja) 1987-10-23 1987-10-23 マスクの欠陥修正装置

Publications (2)

Publication Number Publication Date
DE3785737D1 DE3785737D1 (de) 1993-06-09
DE3785737T2 true DE3785737T2 (de) 1993-09-02

Family

ID=26548427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787118954T Expired - Fee Related DE3785737T2 (de) 1986-12-26 1987-12-21 Geraet zur ausbesserung eines gemusterten films.

Country Status (3)

Country Link
US (1) US4851097A (de)
EP (1) EP0273351B1 (de)
DE (1) DE3785737T2 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US4976843A (en) * 1990-02-02 1990-12-11 Micrion Corporation Particle beam shielding
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
US5188705A (en) * 1991-04-15 1993-02-23 Fei Company Method of semiconductor device manufacture
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
US5217566A (en) * 1991-06-06 1993-06-08 Lsi Logic Corporation Densifying and polishing glass layers
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5514616A (en) * 1991-08-26 1996-05-07 Lsi Logic Corporation Depositing and densifying glass to planarize layers in semi-conductor devices based on CMOS structures
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5474640A (en) * 1993-07-19 1995-12-12 Applied Materials, Inc. Apparatus for marking a substrate using ionized gas
US5435850A (en) * 1993-09-17 1995-07-25 Fei Company Gas injection system
US5441836A (en) * 1994-03-30 1995-08-15 International Business Machines Corporation Laser ablation mask repair method
AU2914095A (en) * 1994-06-28 1996-01-25 Fei Company Charged particle deposition of electrically insulating films
JP3310136B2 (ja) * 1994-09-17 2002-07-29 株式会社東芝 荷電ビーム装置
US5506080A (en) * 1995-01-23 1996-04-09 Internation Business Machines Corp. Lithographic mask repair and fabrication method
TW366367B (en) * 1995-01-26 1999-08-11 Ibm Sputter deposition of hydrogenated amorphous carbon film
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5844416A (en) * 1995-11-02 1998-12-01 Sandia Corporation Ion-beam apparatus and method for analyzing and controlling integrated circuits
US5798529A (en) * 1996-05-28 1998-08-25 International Business Machines Corporation Focused ion beam metrology
US5752309A (en) * 1996-06-14 1998-05-19 Quantum Corporation Method and apparatus for precisely dimensioning pole tips of a magnetic transducing head structure
US5840630A (en) * 1996-12-20 1998-11-24 Schlumberger Technologies Inc. FBI etching enhanced with 1,2 di-iodo-ethane
US6165649A (en) * 1997-01-21 2000-12-26 International Business Machines Corporation Methods for repair of photomasks
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6074571A (en) * 1997-09-30 2000-06-13 International Business Machines Corporation Cut and blast defect to avoid chrome roll over annealing
EP0989595A3 (de) * 1998-09-18 2001-09-19 Ims-Ionen Mikrofabrikations Systeme Gmbh Vorrichtung zur Bearbeitung von Substratoberflächen
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6030731A (en) * 1998-11-12 2000-02-29 Micron Technology, Inc. Method for removing the carbon halo caused by FIB clear defect repair of a photomask
US6277526B1 (en) 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
US6096459A (en) * 1998-12-28 2000-08-01 Micron Technology, Inc. Method for repairing alternating phase shifting masks
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
US7094312B2 (en) * 1999-07-22 2006-08-22 Fsi Company Focused particle beam systems and methods using a tilt column
JP2002175770A (ja) * 2000-12-08 2002-06-21 Hitachi Ltd 気体排気用試料室及びそれを用いた回路パターン形成装置
US6806198B1 (en) * 2001-05-23 2004-10-19 Advanced Micro Devices, Inc. Gas-assisted etch with oxygen
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
EP1630849B1 (de) * 2004-08-27 2011-11-02 Fei Company Lokalisierte Plasmabehandlung
US7205237B2 (en) * 2005-07-05 2007-04-17 International Business Machines Corporation Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization
US20070243713A1 (en) * 2006-04-12 2007-10-18 Lam Research Corporation Apparatus and method for generating activated hydrogen for plasma stripping
JP2008233035A (ja) * 2007-03-23 2008-10-02 Toshiba Corp 基板検査方法
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
DE102008037951B4 (de) * 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
JP5650234B2 (ja) * 2009-11-16 2015-01-07 エフ・イ−・アイ・カンパニー ビーム処理システムに対するガス送達

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
EP0198908A4 (de) * 1984-10-26 1987-03-02 Ion Beam Systems Inc Veränderung eines substrats durch einen fokussierten strahl.
US4698236A (en) * 1984-10-26 1987-10-06 Ion Beam Systems, Inc. Augmented carbonaceous substrate alteration

Also Published As

Publication number Publication date
DE3785737D1 (de) 1993-06-09
US4851097A (en) 1989-07-25
EP0273351A3 (en) 1989-04-12
EP0273351A2 (de) 1988-07-06
EP0273351B1 (de) 1993-05-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee