DE3767591D1 - Vorrichtung zur ausbildung eines duennen filmes. - Google Patents
Vorrichtung zur ausbildung eines duennen filmes.Info
- Publication number
- DE3767591D1 DE3767591D1 DE8787110160T DE3767591T DE3767591D1 DE 3767591 D1 DE3767591 D1 DE 3767591D1 DE 8787110160 T DE8787110160 T DE 8787110160T DE 3767591 T DE3767591 T DE 3767591T DE 3767591 D1 DE3767591 D1 DE 3767591D1
- Authority
- DE
- Germany
- Prior art keywords
- training
- thin film
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61165141A JPS6320450A (ja) | 1986-07-14 | 1986-07-14 | 基板のクリ−ニング装置 |
JP62069035A JPS63235476A (ja) | 1987-03-25 | 1987-03-25 | 化合物薄膜形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3767591D1 true DE3767591D1 (de) | 1991-02-28 |
Family
ID=26410212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787110160T Expired - Fee Related DE3767591D1 (de) | 1986-07-14 | 1987-07-14 | Vorrichtung zur ausbildung eines duennen filmes. |
Country Status (6)
Country | Link |
---|---|
US (2) | US4890575A (de) |
EP (1) | EP0253361B1 (de) |
KR (1) | KR900005118B1 (de) |
CN (1) | CN87104933A (de) |
CA (1) | CA1294063C (de) |
DE (1) | DE3767591D1 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5336378A (en) * | 1989-02-15 | 1994-08-09 | Japan Energy Corporation | Method and apparatus for producing a high-purity titanium |
JPH02258689A (ja) * | 1989-03-31 | 1990-10-19 | Canon Inc | 結晶質薄膜の形成方法 |
DE69005938T2 (de) * | 1989-07-31 | 1994-05-19 | Matsushita Electric Ind Co Ltd | Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. |
EP0551117A2 (de) * | 1992-01-08 | 1993-07-14 | Mitsubishi Denki Kabushiki Kaisha | Hochintegrierte Schaltung sowie Verfahren zur Herstellung von einem dünnen Film und dazugehörige Einrichtung |
US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
JP3737221B2 (ja) * | 1996-09-06 | 2006-01-18 | 英樹 松村 | 薄膜作成方法及び薄膜作成装置 |
US5821548A (en) * | 1996-12-20 | 1998-10-13 | Technical Visions, Inc. | Beam source for production of radicals and metastables |
US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
US6056831A (en) * | 1998-07-10 | 2000-05-02 | International Business Machines Corporation | Process for chemically and mechanically enhancing solder surface properties |
US6607613B2 (en) | 1998-07-10 | 2003-08-19 | International Business Machines Corporation | Solder ball with chemically and mechanically enhanced surface properties |
US6250540B1 (en) * | 1999-04-30 | 2001-06-26 | International Business Machines Corporation | Fluxless joining process for enriched solders |
US6742701B2 (en) * | 1998-09-17 | 2004-06-01 | Kabushiki Kaisha Tamura Seisakusho | Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatus |
JP2000180469A (ja) * | 1998-12-18 | 2000-06-30 | Fujitsu Ltd | 半導体装置用コンタクタ及び半導体装置用コンタクタを用いた試験装置及び半導体装置用コンタクタを用いた試験方法及び半導体装置用コンタクタのクリーニング方法 |
JP2000315458A (ja) * | 1999-04-28 | 2000-11-14 | Toshiba Corp | 平面型画像表示装置の製造方法、および平面型画像表示装置の製造装置 |
US6559026B1 (en) | 2000-05-25 | 2003-05-06 | Applied Materials, Inc | Trench fill with HDP-CVD process including coupled high power density plasma deposition |
US20040011378A1 (en) * | 2001-08-23 | 2004-01-22 | Jackson David P | Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays |
AU2001288402A1 (en) * | 2000-08-23 | 2002-03-04 | Deflex Llc | Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays |
KR100797385B1 (ko) * | 2000-10-19 | 2008-01-24 | 로베르트 보쉬 게엠베하 | 유도 결합 플라즈마를 이용한 기판의 에칭 장치 및 방법 |
US20050026436A1 (en) * | 2000-12-21 | 2005-02-03 | Hogan Timothy J. | Method for improving ash rate uniformity in photoresist ashing process equipment |
US6740601B2 (en) | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
US6596653B2 (en) * | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
US6812153B2 (en) * | 2002-04-30 | 2004-11-02 | Applied Materials Inc. | Method for high aspect ratio HDP CVD gapfill |
US20040045578A1 (en) * | 2002-05-03 | 2004-03-11 | Jackson David P. | Method and apparatus for selective treatment of a precision substrate surface |
US7628897B2 (en) * | 2002-10-23 | 2009-12-08 | Applied Materials, Inc. | Reactive ion etching for semiconductor device feature topography modification |
US7097886B2 (en) * | 2002-12-13 | 2006-08-29 | Applied Materials, Inc. | Deposition process for high aspect ratio trenches |
US7264741B2 (en) * | 2002-12-31 | 2007-09-04 | Cardinal Cg Company | Coater having substrate cleaning device and coating deposition methods employing such coater |
US6808748B2 (en) * | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
US7081414B2 (en) * | 2003-05-23 | 2006-07-25 | Applied Materials, Inc. | Deposition-selective etch-deposition process for dielectric film gapfill |
US6958112B2 (en) * | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
US7205240B2 (en) | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
US6903031B2 (en) * | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
US7087497B2 (en) * | 2004-03-04 | 2006-08-08 | Applied Materials | Low-thermal-budget gapfill process |
US20050260356A1 (en) * | 2004-05-18 | 2005-11-24 | Applied Materials, Inc. | Microcontamination abatement in semiconductor processing |
US7229931B2 (en) * | 2004-06-16 | 2007-06-12 | Applied Materials, Inc. | Oxygen plasma treatment for enhanced HDP-CVD gapfill |
US7183227B1 (en) | 2004-07-01 | 2007-02-27 | Applied Materials, Inc. | Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas |
US7087536B2 (en) * | 2004-09-01 | 2006-08-08 | Applied Materials | Silicon oxide gapfill deposition using liquid precursors |
WO2006138727A2 (en) * | 2005-06-17 | 2006-12-28 | The Regents Of The University Of Michigan | Apparatus and method of producing net-shape components from alloy sheets |
US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
JP4980866B2 (ja) * | 2007-10-05 | 2012-07-18 | 日本電子株式会社 | 膜形成装置 |
US7678715B2 (en) * | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
US8747963B2 (en) * | 2009-01-23 | 2014-06-10 | Lockheed Martin Corporation | Apparatus and method for diamond film growth |
KR101321807B1 (ko) * | 2009-04-03 | 2013-10-28 | 도쿄엘렉트론가부시키가이샤 | 증착 헤드 및 성막 장치 |
JP5559656B2 (ja) * | 2010-10-14 | 2014-07-23 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
US8497211B2 (en) | 2011-06-24 | 2013-07-30 | Applied Materials, Inc. | Integrated process modulation for PSG gapfill |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US11154903B2 (en) * | 2016-05-13 | 2021-10-26 | Jiangsu Favored Nanotechnology Co., Ltd. | Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization |
CN111441045B (zh) * | 2020-05-28 | 2024-03-22 | 西安建筑科技大学 | 一种电子束沉积喷头及方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161418A (en) * | 1975-06-27 | 1979-07-17 | Futaba Denshi Kogyo K. K. | Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
JPS5399762A (en) * | 1977-02-12 | 1978-08-31 | Futaba Denshi Kogyo Kk | Device for producing compound semiconductor film |
JPS53123659A (en) * | 1977-04-05 | 1978-10-28 | Futaba Denshi Kogyo Kk | Method of producing compound semiconductor wafer |
JPS60221566A (ja) * | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | 薄膜形成装置 |
US4645977A (en) * | 1984-08-31 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | Plasma CVD apparatus and method for forming a diamond like carbon film |
-
1987
- 1987-06-23 KR KR1019870006373A patent/KR900005118B1/ko not_active IP Right Cessation
- 1987-07-14 EP EP87110160A patent/EP0253361B1/de not_active Expired - Lifetime
- 1987-07-14 CA CA000541974A patent/CA1294063C/en not_active Expired - Fee Related
- 1987-07-14 CN CN198787104933A patent/CN87104933A/zh active Pending
- 1987-07-14 US US07/073,249 patent/US4890575A/en not_active Expired - Fee Related
- 1987-07-14 DE DE8787110160T patent/DE3767591D1/de not_active Expired - Fee Related
-
1989
- 1989-05-18 US US07/353,433 patent/US5054421A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0253361A1 (de) | 1988-01-20 |
US4890575A (en) | 1990-01-02 |
CN87104933A (zh) | 1988-01-27 |
KR880002268A (ko) | 1988-04-30 |
US5054421A (en) | 1991-10-08 |
CA1294063C (en) | 1992-01-07 |
EP0253361B1 (de) | 1991-01-23 |
KR900005118B1 (ko) | 1990-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |