DE69031024D1 - Vorrichtung zur Herstellung eines Wolframfilmes - Google Patents
Vorrichtung zur Herstellung eines WolframfilmesInfo
- Publication number
- DE69031024D1 DE69031024D1 DE69031024T DE69031024T DE69031024D1 DE 69031024 D1 DE69031024 D1 DE 69031024D1 DE 69031024 T DE69031024 T DE 69031024T DE 69031024 T DE69031024 T DE 69031024T DE 69031024 D1 DE69031024 D1 DE 69031024D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- tungsten film
- tungsten
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1090226A JP2730695B2 (ja) | 1989-04-10 | 1989-04-10 | タングステン膜の成膜装置 |
PCT/JP1990/000456 WO1990012418A1 (en) | 1989-04-10 | 1990-04-04 | Device for forming tungsten film |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69031024D1 true DE69031024D1 (de) | 1997-08-14 |
DE69031024T2 DE69031024T2 (de) | 1997-10-30 |
Family
ID=13992569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69031024T Expired - Lifetime DE69031024T2 (de) | 1989-04-10 | 1990-04-04 | Vorrichtung zur Herstellung eines Wolframfilmes |
Country Status (6)
Country | Link |
---|---|
US (1) | US5149378A (de) |
EP (1) | EP0428733B1 (de) |
JP (1) | JP2730695B2 (de) |
KR (1) | KR0144695B1 (de) |
DE (1) | DE69031024T2 (de) |
WO (1) | WO1990012418A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090706A (en) * | 1993-06-28 | 2000-07-18 | Applied Materials, Inc. | Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein |
US5482749A (en) * | 1993-06-28 | 1996-01-09 | Applied Materials, Inc. | Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein |
JPH07176484A (ja) * | 1993-06-28 | 1995-07-14 | Applied Materials Inc | 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法 |
JPH07172809A (ja) * | 1993-10-14 | 1995-07-11 | Applied Materials Inc | 基板上への珪化タングステンコーティングの堆積操作の事前に堆積チャンバのアルミニウムを有する表面を処理する予備処理プロセス |
US5895586A (en) * | 1994-05-17 | 1999-04-20 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre-fluorinated material of aluminum |
KR100198678B1 (ko) | 1996-02-28 | 1999-06-15 | 구본준 | 금속 배선 구조 및 형성방법 |
JP4125406B2 (ja) | 1997-08-08 | 2008-07-30 | 忠弘 大見 | フッ化不働態処理が施された溶接部材の溶接方法および再フッ化不働態処理方法ならびに溶接部品 |
US6440852B1 (en) * | 1999-01-26 | 2002-08-27 | Agere Systems Guardian Corp. | Integrated circuit including passivated copper interconnection lines and associated manufacturing methods |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
US6391146B1 (en) * | 2000-04-11 | 2002-05-21 | Applied Materials, Inc. | Erosion resistant gas energizer |
US6673323B1 (en) | 2000-03-24 | 2004-01-06 | Applied Materials, Inc. | Treatment of hazardous gases in effluent |
JP4763245B2 (ja) * | 2004-03-17 | 2011-08-31 | 財団法人国際科学振興財団 | 表示装置等電子装置の製造装置、製造方法および表示装置等の電子装置 |
WO2007032086A1 (ja) * | 2005-09-16 | 2007-03-22 | Tadahiro Ohmi | 表示装置等電子装置の製造装置、製造方法および表示装置等の電子装置 |
US8021492B2 (en) * | 2007-05-29 | 2011-09-20 | United Microelectronics Corp. | Method of cleaning turbo pump and chamber/turbo pump clean process |
JP4680246B2 (ja) * | 2007-10-03 | 2011-05-11 | キヤノンアネルバ株式会社 | 気相成長装置の異常生成物除去方法 |
FR2956123B1 (fr) * | 2010-02-08 | 2017-10-27 | Dalic | Procede de protection d'un substrat metallique contre la corrosion et l'abrasion, et substrat metallique obtenu par ce procede. |
JP5335843B2 (ja) * | 2011-03-22 | 2013-11-06 | 公益財団法人国際科学振興財団 | 電子装置用基板の製造法 |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
CN110678973B (zh) | 2017-06-02 | 2023-09-19 | 应用材料公司 | 碳化硼硬掩模的干式剥除 |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
CN111095524B (zh) | 2017-09-12 | 2023-10-03 | 应用材料公司 | 用于使用保护阻挡物层制造半导体结构的设备和方法 |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
CN117936420A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
SG11202003438QA (en) | 2017-11-16 | 2020-05-28 | Applied Materials Inc | High pressure steam anneal processing apparatus |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
KR102649241B1 (ko) | 2018-01-24 | 2024-03-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 어닐링을 사용한 심 힐링 |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
KR102528076B1 (ko) | 2018-10-30 | 2023-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 구조를 식각하기 위한 방법들 |
JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1405264A (fr) * | 1964-05-12 | 1965-07-09 | Commissariat Energie Atomique | Procédé de fabrication d'enceintes sous vide |
US3591426A (en) * | 1968-10-30 | 1971-07-06 | Nasa | Corrosion resistant beryllium |
JPS62230981A (ja) * | 1986-03-31 | 1987-10-09 | Toshiba Corp | 薄膜形成方法 |
JPH0672304B2 (ja) * | 1987-02-20 | 1994-09-14 | マツダ株式会社 | タングステンカ−バイト層を析出させる処理装置 |
US5009963A (en) * | 1988-07-20 | 1991-04-23 | Tadahiro Ohmi | Metal material with film passivated by fluorination and apparatus composed of the metal material |
-
1989
- 1989-04-10 JP JP1090226A patent/JP2730695B2/ja not_active Expired - Fee Related
-
1990
- 1990-04-04 US US07/613,730 patent/US5149378A/en not_active Expired - Lifetime
- 1990-04-04 DE DE69031024T patent/DE69031024T2/de not_active Expired - Lifetime
- 1990-04-04 WO PCT/JP1990/000456 patent/WO1990012418A1/ja active IP Right Grant
- 1990-04-04 EP EP90905657A patent/EP0428733B1/de not_active Expired - Lifetime
- 1990-12-10 KR KR90702595A patent/KR0144695B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2730695B2 (ja) | 1998-03-25 |
EP0428733A4 (en) | 1993-03-03 |
KR920700469A (ko) | 1992-02-19 |
EP0428733B1 (de) | 1997-07-09 |
US5149378A (en) | 1992-09-22 |
JPH02270964A (ja) | 1990-11-06 |
WO1990012418A1 (en) | 1990-10-18 |
KR0144695B1 (en) | 1998-08-17 |
DE69031024T2 (de) | 1997-10-30 |
EP0428733A1 (de) | 1991-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |