KR920700469A - 텅스텐 막의 성막장치(成膜裝置) - Google Patents

텅스텐 막의 성막장치(成膜裝置)

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Publication number
KR920700469A
KR920700469A KR1019900702595A KR900702595A KR920700469A KR 920700469 A KR920700469 A KR 920700469A KR 1019900702595 A KR1019900702595 A KR 1019900702595A KR 900702595 A KR900702595 A KR 900702595A KR 920700469 A KR920700469 A KR 920700469A
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gas
tungsten film
introducing
contact
tungsten
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KR1019900702595A
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English (en)
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KR0144695B1 (en
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다다히로 오미
노부히로 미끼
마타고로 마에노
히로히사 기꾸야마
Original Assignee
다다히로 오미
하시모토 미찌노스께
하시모토 가세이 가부시끼가이샤
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Publication of KR0144695B1 publication Critical patent/KR0144695B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

텅스텐 막의 성막장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 장치를 사용하여 성막을 행하는 MOSIC의 일례를 나타내는 개념도다,
제2도는 성막실에서 플루오르화 부동태 막을 형성하기 위한 장의 일례를 나타낸 개념도이다,
제3도는 WF6가스에 대한 내식성을 평가하기 이한 장치를 나타내는 개념도이다.

Claims (12)

  1. 성막실과, WF6가스를 성막실에 도입하기 위한 수단과, H2가스를 성막실에 도입하기 위한 수단을 갖고, 적어도 그 성막실의 적어도 WF6가스와 접촉하는 부분은, 거의 화학량론비를 만족하는 금속 플루오르화물을 주 성분으로 하는 플루오르화 부동태 막을 표면에 갖는 금속 재료로 제조되는 것을 특징으로 하는 텅스텐 막의 성막장치.
  2. 제1항에 있어서, F3가스를 성막실에 도입하기 위한 수단을 설치하는 것을 특징으로 하는 텅스텐 막의 성막장치.
  3. 제1항 또는제2항에 있어서, WF6가스를 도입하기 위한 수단의, 적어도 WF6가스와 접촉하는 부분은, 산화물 부동태를 표면에 갖는 스텐레스로 제조되는 것을 특징으로 하는 텅스텐 막의 성막장치.
  4. 제1항 또는 제2항에 있어서, WF6가스를 도입하기 위한 수단의 적어도 WF6가스와 접촉하는 부분은, 거의 화학량론비를 만족하는 금속 플루오르화물을 주성분으로 하는 플루오르화 부동태 막을 표면에 갖는 금속 재료로 제조되는 것을 특징으로 하는 텅스텐 막의 성막장치.
  5. 제2항에 있어서, F2가스를 도입하기 위한 수단의 적어도 F2가스와 접촉하는 부분은, 산화물 부동태 막을 표면에 갖는 스텐레스로 제조되는 것을 특징으로 하는 텅스텐 막의 성막장치.
  6. 제2항에 있어서, F2가스를 도입하기 위한 수단의 적어도 F2가스와 접촉하는 부분은, 거의 화학량론비를 만족하는 금속 플루오르화물을 주성분으로 하는 플루오르화 부동태 막을 표면에 갖는 금속 재료로 제조되는 것을 특징으로 하는 텅스텐 막의 성막장치.
  7. 제1항 내지 제6항중 어느 하나에 있어서, 적어도 유통 가스와 접촉하는 부분이, 산화물 부동태 막을 표면에 갖는 스텐레스로 제조되는 밸브, 레귤레이터 및/또는 필터를 적당한 위치에 설치하는 것을 특징으로 하는 텅스텐의 성막장치.
  8. 제1항 내지 제6항중 어느 하나에 있어서, 적어도 유통가스와 접촉하는 부분은, 거의 화학량론비를 만족하는 금속 플루오르화물을 주성분으로 하는 플루오르화 부동태 막을 표면에 갖는 금속 재료로 제조된 밸브, 레귤레이터 및/또는 필터를 적당한 위치에 설치하는 것을 특징으로 하는 텅스텐의 성막장치.
  9. 제2항 내지 제8항중 어느 하나에 있어서, 성막실 전체를 가열하기위한 수단을 설치하는 것을 특징으로 하는 텅스텐 막의 성막장치.
  10. 제1항, 제4항, 제6항 또는 제8항에 있어서, 플루오르화 부동태막이, Rmax= 0.03 내지 1.0㎛의 조도를 갖는 표면에 형성되어 있는 것을 특징으로 하는 텅스텐 막의 성막장치.
  11. 제1항, 제4항, 제6항, 제8항 또는 제10항에 이어서, 금속재료는 스텐레스, 니켈, 니켈합금, 알루미늄,알루미늄합금, 동, 동합금, 크롬, 코발트, 코발트합금, 티탄, 티탄합금인 텅스텐 막의 성막장치.
  12. 제1항, 제4항, 제6항, 제8항 ,제10항 또는 제11항에 있어서, 표면의 평탄도를 반경 5㎛ 원주내에서 Rmax=0.03 내지 1.0㎛정도로 한것을 특징으로 하는 텅스텐 막의 성막장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR90702595A 1989-04-10 1990-12-10 Tungsten film device KR0144695B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP090226/89 1989-04-10
JP1090226A JP2730695B2 (ja) 1989-04-10 1989-04-10 タングステン膜の成膜装置
PCT/JP1990/000456 WO1990012418A1 (en) 1989-04-10 1990-04-04 Device for forming tungsten film

Publications (2)

Publication Number Publication Date
KR920700469A true KR920700469A (ko) 1992-02-19
KR0144695B1 KR0144695B1 (en) 1998-08-17

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US (1) US5149378A (ko)
EP (1) EP0428733B1 (ko)
JP (1) JP2730695B2 (ko)
KR (1) KR0144695B1 (ko)
DE (1) DE69031024T2 (ko)
WO (1) WO1990012418A1 (ko)

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Also Published As

Publication number Publication date
DE69031024D1 (de) 1997-08-14
US5149378A (en) 1992-09-22
EP0428733A1 (en) 1991-05-29
JP2730695B2 (ja) 1998-03-25
DE69031024T2 (de) 1997-10-30
KR0144695B1 (en) 1998-08-17
JPH02270964A (ja) 1990-11-06
EP0428733A4 (en) 1993-03-03
EP0428733B1 (en) 1997-07-09
WO1990012418A1 (en) 1990-10-18

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