JP7190450B2 - 炭化ホウ素ハードマスクのドライストリッピング - Google Patents
炭化ホウ素ハードマスクのドライストリッピング Download PDFInfo
- Publication number
- JP7190450B2 JP7190450B2 JP2019564959A JP2019564959A JP7190450B2 JP 7190450 B2 JP7190450 B2 JP 7190450B2 JP 2019564959 A JP2019564959 A JP 2019564959A JP 2019564959 A JP2019564959 A JP 2019564959A JP 7190450 B2 JP7190450 B2 JP 7190450B2
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- process gas
- boron carbide
- pressure vessel
- substrate
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- 229910052580 B4C Inorganic materials 0.000 title claims description 67
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 title claims description 67
- 238000000034 method Methods 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 107
- 239000007789 gas Substances 0.000 claims description 77
- 238000012545 processing Methods 0.000 claims description 47
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 25
- 239000007800 oxidant agent Substances 0.000 claims description 24
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 10
- 239000007795 chemical reaction product Substances 0.000 claims description 10
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 238000009833 condensation Methods 0.000 claims description 8
- 230000005494 condensation Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 150000002978 peroxides Chemical class 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000047 product Substances 0.000 description 15
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229920006169 Perfluoroelastomer Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
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- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 239000012808 vapor phase Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
[0002] メモリデバイス、論理デバイス、マイクロプロセッサなどの半導体デバイスの形成は、ハードマスクの形成を含む。ハードマスクは、エッチングされる下位の基板上にブランケット層として形成される。フォトレジストのパターニングされた層は、パターンとしてフォトレジスト層を用いてハードマスクがエッチングされる前に、ハードマスクの上に形成される。ハードマスクが下位の基板をエッチングするためのソロパターンとして残るように、ハードマスクのパターニング後、フォトレジスト層は除去される。ハードマスクは下位の基板上に形成され、エッチングされ、次に基板から除去される別個の層であるが、エッチング処理に対する耐性が改善されていることに加えて、コストが安いため、ハードマスクを望ましいものにしている。ホウ素がドープされた炭素及び炭化ホウ素の膜は一般的に、パターニング性能が優れているため、高品質のハードマスクを生成することが知られている。
2BC + 5H2O → B2O3 + 2CO + 5H2 ………(i)
2BC + 7H2O → B2O3 + 2CO2 + 7H2 ……(ii)
三酸化ホウ素(B2O3)は次に過剰な蒸気と反応して、化学反応式(iii)及び(iv)に示したように、ホウ酸(H3BO3)及びメタホウ酸(HBO2)を産生する。
B2O3 + H2O → 2HBO2 …………………………… (iii)
B2O3 + 3H2O → 2H3BO3 ………………………… (iv)
ホウ酸及びメタホウ酸は揮発性の生成物である。ホウ酸及びメタホウ酸は水素ガス、一酸化炭素及び二酸化炭素と混合して、炭化ホウ素と水蒸気との間の反応生成物の気体混合物を形成する。
Claims (18)
- 基板の上に堆積した炭化ホウ素層をストリッピングする方法であって、
前記炭化ホウ素層が上部に堆積している前記基板を圧力容器の処理領域に装填することと、
500Torrから60barの圧力で、酸化剤を含む処理ガスであって、プラズマを含まない処理ガスに前記基板を曝露することと、
前記処理ガスの凝結点を超える温度まで前記圧力容器の前記処理領域を加熱することと、
前記処理ガスと前記炭化ホウ素層との間の一又は複数の反応生成物を前記圧力容器から除去することと、
を含む方法。 - 前記基板を前記処理ガスに曝露することは、
前記基板を10barを超える圧力で蒸気に曝露することを含む、請求項1に記載の方法。 - 前記酸化剤は、オゾン、酸素、水蒸気、重水、アンモニア、過酸化物、水酸化物含有化合物、酸素同位体及び水素同位体からなる群から選択される、請求項1に記載の方法。
- 前記基板は、前記基板上に堆積した炭化ホウ素の量と完全に反応するのに必要な量の酸化剤を超える量の酸化剤に曝露される、請求項1に記載の方法。
- 前記圧力容器の前記処理領域は、300°Cから700°Cの温度まで加熱される、請求項1に記載の方法。
- 前記処理ガスは、5%の乾燥蒸気から100%の乾燥蒸気を含む、請求項1に記載の方法。
- 複数の基板の上に堆積した炭化ホウ素層をストリッピングする方法であって、
上部に堆積した前記炭化ホウ素層をそれぞれ有する前記複数の基板を、圧力容器の処理領域に同時に装填することと、
500Torrから60barの圧力で、酸化剤を含む処理ガスに前記複数の基板を曝露することと、
前記処理ガスの凝結点を超える温度まで前記圧力容器の前記処理領域を加熱することと、
前記処理ガスと前記炭化ホウ素層との間の一又は複数の反応生成物を前記圧力容器から除去することと、
を含む方法。 - 前記複数の基板を前記処理ガスに曝露することは、
前記複数の基板を10barを超える圧力で蒸気に曝露することを含む、請求項7に記載の方法。 - 前記酸化剤は、オゾン、酸素、水蒸気、重水、アンモニア、過酸化物、水酸化物含有化合物、酸素同位体及び水素同位体からなる群から選択される、請求項7に記載の方法。
- 前記複数の基板は、前記複数の基板上に堆積した炭化ホウ素の量と完全に反応するのに必要な量の酸化剤を超える量の酸化剤に曝露される、請求項7に記載の方法。
- 前記圧力容器の前記処理領域は、300°Cから700°Cの温度まで加熱される、請求項7に記載の方法。
- 前記処理ガスは、5%の乾燥蒸気から100%の乾燥蒸気を含む、請求項7に記載の方法。
- 複数の基板の上に堆積した炭化ホウ素層をストリッピングする方法であって、
上部に堆積した前記炭化ホウ素層をそれぞれ有する前記複数の基板を、圧力容器の処理領域に同時に装填することと、
10barから60barの圧力で、蒸気を含む処理ガスに前記複数の基板を曝露することと、
前記処理ガスの凝結点を超える温度まで前記圧力容器の前記処理領域を加熱することと、
前記処理ガスと前記炭化ホウ素層との間の一又は複数の反応生成物を前記圧力容器から除去することと、
を含む方法。 - 前記処理ガスは、5%の過熱蒸気から100%の過熱蒸気を含む、請求項13に記載の方法。
- 前記酸化剤は、過酸化水素である、請求項3に記載の方法。
- 前記一又は複数の反応生成物は、三酸化ホウ素、二酸化炭素、一酸化炭素、水素、ホウ酸及びメタホウ酸を含む、請求項1に記載の方法。
- 前記酸化剤は、過酸化水素である、請求項9に記載の方法。
- 前記一又は複数の反応生成物は、三酸化ホウ素、二酸化炭素、一酸化炭素、水素、ホウ酸及びメタホウ酸を含む、請求項7に記載の方法。
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