CN111095513B - 高压高温退火腔室 - Google Patents
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Abstract
本公开内容的实施方式涉及用于退火半导体基板的设备和方法。在一个实施方式中，披露一种批量处理腔室。批量处理腔室包括：腔室主体，所述腔室主体包围处理区域；气体面板，所述气体面板配置成提供处理流体至处理区域中；凝结器，所述凝结器流体连接至处理区域；和温度控制的流体回路，所述温度控制的流体回路配置成将处理流体维持在高于处理流体的凝结点的温度。处理区域被配置成在处理期间保持多个基板。凝结器被配置成将处理流体凝结成液态。
Description
技术领域
本公开内容的实施方式大体涉及集成电路的制造，且具体而言涉及用于退火一个或更多个半导体基板的设备和方法。
背景技术
半导体装置的形成，诸如存储装置、逻辑装置、微处理器等等，涉及在半导体基板之上沉积一个或更多个膜。膜用于建立制造半导体装置所需的电路。退火为热处理工艺，用于在沉积的膜上实现各种作用，以改善其电学特性。举例而言，退火可用于活化掺杂剂、使沉积的膜致密化、或改变生长的膜的状态。
自从数十年前引入以来，半导体装置的几何尺寸已显著减少。增加装置密度导致结构特征具有减小的空间尺寸。举例而言，形成现代半导体装置的结构特征的间隙和沟槽的深宽比(深度对宽度的比例)已窄化至一个程度，使得以材料填充间隙变得极具挑战性。
因此，需要一种用于退火半导体基板的改良的设备和方法，以能够适应与制造现代半导体装置相关联的挑战。
发明内容
本公开内容的实施方式涉及一种用于退火一个或更多个半导体基板的设备和方法。在一个实施方式中，披露一种批量处理腔室(batch processing chamber)。批量处理腔室包括腔室主体，所述腔室主体包围处理区域；气体面板，所述气体面板配置成提供处理流体至处理区域中；凝结器(condenser)，所述凝结器流体连接至处理区域；和温度控制的流体回路，所述温度控制的流体回路配置成将处理流体维持在高于处理流体的凝结点的温度。处理区域被配置成在处理期间容纳多个基板。凝结器被配置成将处理流体凝结成液态。
在本公开内容的另一实施方式中，披露一种退火基板的方法。所述方法包括：将基板装载至处理腔室的处理区域中；将处理流体流动通过气体导管至处理区域中；和将气体导管及处理区域中的处理流体维持在高于处理流体的凝结点的温度。
附图说明
通过参照各实施方式(一些实施方式图示于附图中)可以详细地理解本公开内容的上述特征以及以上简要概述的有关本公开内容的更具体的描述。然而，应理解附图仅图示示例性实施方式，且因此不应被视为对本公开内容的范围的限制，而是可以允许其他同等效果的实施方式。
图1为用于退火一个或更多个基板的批量处理腔室的简化的前截面图，。
图1A为批量处理腔室的一部分的局部截面图，图示连接至温度控制的流体回路。
图2为用于退火单一基板的单一基板处理腔室的简化的前截面图。
图3为在批量处理腔室和单一基板腔室中使用的气体面板的简化示意图。
图4为在处理腔室中退火一个或更多个基板的方法的方块图。
为了便于理解，尽可能地使用相同的参考数字来表示各图中共有的相同元件。预期一个实施方式的元件和特征可有益地并入其他实施方式中而无需进一步说明。
具体实施方式
本公开内容的实施方式涉及用于退火一个或更多个半导体基板的设备和方法。基板可在单一腔室内以单一基板或批量的基板而退火。在退火期间，基板在高压高温下暴露于处理流体。当处理一个或更多个基板时，处理流体从气体面板流动通过温度控制的流体回路而至腔室中。处理流体藉由耦接至流体回路的一个或更多个加热器，而维持在高于处理流体的凝结点的温度。流体回路耦接至凝结器，其中在退火完成之后处理流体凝结成液态。在流体回路上的加热器使用通过与流体回路的不同部分接合的温度传感器获得的温度测量的信息而控制。显示于图1中且在此处说明的批量处理腔室100，以及显示于图2中且在此处说明的单一基板处理腔室200，可用于在高温下实行高压退火处理的目的。
图1为批量处理腔室100的简化的前截面图，用于在高温下进行高压退火处理。批量处理腔室100具有主体110，所述主体具有外表面112和内表面113而包围内部容积115。在诸如图1的某些实施方式中，主体110具有环状截面，但在其他实施方式中，主体110的截面可为矩形或任何闭合的形状。主体110的外表面112可以由耐腐蚀钢(CRS)制成，诸如但不限于不锈钢。外表面112可选地以隔热层覆盖，而避免热从批量处理腔室100耗损至外侧环境中。主体110的内表面113可以由镍基钢合金制成或覆盖，而展现高的耐腐蚀性，诸如但不限于和/>可选地，主体110可由镍基钢合金制成。
批量处理腔室100具有门120，门120配置成将内部容积115密封包围在主体110内，使得当门120开启时基板可传送进出内部容积115。利用高压密封件122以在处理期间将门120密封至主体110。高压密封件122可以由高温聚合物制成，诸如但不限于全氟弹性体(perflouroelastomer)。冷却沟道124设置在门120或主体110中，邻近于高压密封件122，以便维持高压密封件122低于高压密封件122的最大安全操作温度。诸如但不限于惰性流体、介电流体和高性能传热流体之类的冷却剂可在冷却沟道124内循环。冷却剂在冷却沟道124内的流动藉由控制器180通过从温度传感器116或流量传感器(未示出)所接收的反馈而控制。
抗对流面板142可放置在门120及盒130之间。抗对流面板142将内部容积115分隔成其中放置盒(cassette)130的热处理区域102和靠近门120的较冷区域104。抗对流面板142通常是以与腔室主体110相同的材料制成的金属板。抗对流面板142可耦接至门120、盒130或其他适合的结构。抗对流面板142可包括面向盒130的面144，而配置成降低从放置盒130的区域至靠近门120的主体110的区域传送的热量。面144可足够大以抑制热处理区域102与较冷区域104之间的对流。面144亦可具有抛光的表面或热反射涂层。抗对流面板142造成腔室主体110结合较冷区域104的部分被遮蔽且维持低于腔室主体110结合热处理区域102的部分的温度。因此，靠近门120且与腔室主体110结合较冷区域104的部分接触的密封件122较不易于因为超过其最大操作温度而产生故障。
批量处理腔室100具有穿过主体110形成的端口117。端口117流体连接至温度控制的流体回路190。流体回路190连接气体面板150、凝结器160和端口117。流体回路190具有气体导管192、源导管157、入口隔离阀155、排气导管163和出口隔离阀165。一个或更多个加热器152、154、158、196、164、166与流体回路190的不同部分接合。一个或更多个温度传感器151、153、119、167和169与流体回路190的不同部分接合，以获得温度测量且将温度测量信息提供至控制器180。
气体导管192在一端通过端口117流体连接至内部容积115。气体导管192具有四个部分，包括腔室导管118、T形导管194、入口导管159和出口导管161。T形导管194具有三个端：第一端连接至入口导管159、第二端连接至出口导管161且第三端连接至腔室导管118。腔室导管118经由端口117流体连接至内部容积115。入口导管159经由入口隔离阀155流体连接至源导管157。出口导管161经由出口隔离阀165流体连接至排气导管163。源导管157流体耦接至气体面板150。排气导管163流体耦接至凝结器160。
腔室导管118与加热器158接合。T形导管194、入口导管159和出口导管161与加热器196接合。源导管157与加热器152接合。入口隔离阀155与加热器154接合。出口隔离阀165与加热器164接合。排气导管163与加热器166接合。加热器152、154、158、196、164和166被配置成将流动通过流体导管190的处理流体维持在高于处理流体的凝结点的温度。举例而言，加热器152、154、158、196、164和166可被配置成将流动通过流体导管190的处理流体维持在一温度下，此温度将处理流体维持为干蒸气或过热蒸气。加热器152、154、158、196、164和166可选地以隔热层覆盖，以避免热耗损至外侧环境中。加热器152、154、158、196、164和166可为灯、电阻加热元件、用于流动传送流体的流体导管或其他适合的加热装置。在一个实施方式中，加热器为缠绕在流体回路的元件周围的电阻条带。加热器152、154、158、196、164和166分别耦接至功率源145。在一个实施方式中，加热器152、154、158、196、164和166的各者可被独立地控制。
温度传感器151与源导管157接合，且被配置成测量源导管157的温度。温度传感器153与入口隔离阀155接合，且被配置成测量入口隔离阀155的温度。温度传感器119与腔室导管118接合，且被配置成测量腔室导管118的温度。温度读取装置156接收且显示来自温度传感器151、153和119的温度测量。温度传感器167与出口隔离阀165接合，且被配置成测量出口隔离阀165的温度。温度传感器169与排气导管163接合，且被配置成测量排气导管163的温度。温度读取装置162接收且显示来自温度传感器167和169的温度测量。温度读取装置156和162将温度测量信息发送至控制器180。传感器151、153、119、167和169可为非接触式传感器，诸如红外线传感器，或为接触式传感器，诸如热电偶。
入口隔离阀155和出口隔离阀165为截止阀。当入口隔离阀155开启时，出口隔离阀165关闭，使得处理流体流动通过源导管157进入气体导管192和内部容积115中，避免处理流体流动至凝结器160中。另一方面，当出口隔离阀165开启时，入口隔离阀155关闭，使得气态产物从内部容积115移除，且流动通过排气导管163且至凝结器160中，避免气态产物流动至气体面板150中。
气体面板150被配置成提供受压的处理流体至源导管157中，用于通过气体导管192传送至内部容积115中。如图3中所示，气体面板150包括处理流体入口310、可选的惰性气体入口320、净化气体入口340和共同出口导管357。处理流体入口310流体连接至流体源(未示出)。流体源可提供加热至气态且用作处理流体的水或其他适合的流体。处理流体入口310藉由导管312、314和隔离阀315流体连接至蒸发器350。隔离阀315具有第一(即，关闭的)状态而避免来自流体源的流体进入蒸发器350。隔离阀315具有第二(即，开启的)状态而允许来自流体源的流体进入蒸发器350。隔离阀315亦配置有或利用质量流量计，以调节流动至蒸发器350中的处理流体的量。蒸发器350被配置成将处理流体转变成气态。在一个示例中，蒸发器350将水转变成蒸气。在一个示例中，蒸发器350将水转变成干蒸气或过热蒸气。
蒸发器350藉由导管352流体连接至共同入口导管354。蒸发器350和共同入口导管354亦藉由导管332流体连接至压力安全阀330。压力安全阀330被配置成释放导管352中的多余压力，且在本领域中通常为已知的。
可选的惰性气体入口320被配置成从压力控制气源(未示出)提供压力控制气体，而用于控制递送通过共同入口导管354的处理流体的压力。藉由气源提供的压力控制气体可为反应气体或惰性气体，诸如但不限于氮气、氩气和类似者，或其他适合的气体。惰性气体入口320藉由隔离阀325和导管322、324流体连接至共同入口导管354。隔离阀325具有第一(即，关闭的)状态而避免来自压力控制气源的流体通过导管324进入共同入口导管354。隔离阀325具有第二(即，开启的)状态而允许来自压力控制气源的流体通过导管324进入共同入口导管354。隔离阀325亦配置有或利用质量流量计，以调节流动至共同入口导管354中的压力控制气体的量。
共同入口导管354藉由阀355和导管356流体连接至共同出口导管357。阀355可被配置为隔离阀，以选择性地将蒸发器350和惰性气体入口320与流体回路190隔离。共同出口导管357流体连接至源导管157，此源导管157将气体面板150耦接至入口隔离阀155。在另一示例中，阀355可被配置为流体控制阀，以选择性地控制蒸发器350和惰性气体入口320从流体回路190流动至腔室主体110的内部容积155中的处理流体的量。流体控制阀的示例包括针阀、节流阀及调变阀等等。
净化气体入口340亦通过共同出口导管357耦接至源导管157。净化气体入口340耦接至净化气体的源(未示出)。净化气体可为惰性气体，诸如但不限于氮气、空气、氩气和类似者。当需要时，净化气体可用于从共同出口导管357和流体回路190移除处理流体的残留物。净化气体入口340藉由隔离阀345流体连接至共同出口导管357。净化气体入口340藉由导管342流体连接至隔离阀345。隔离阀345被配置成选择性地将净化气体入口340与共同出口导管357隔离。隔离阀345藉由导管344流体连接至共同出口导管357。
在某些实施方式中，隔离阀315、325、345和355为截止阀。隔离阀315、325、345和355的操作藉由控制器180来控制。引入内部容积115的处理流体的压力藉由耦接至主体110的压力传感器114监控。因为流体回路190连续耦接至内部容积115，所以压力传感器114亦可用于确定流体回路190内的压力。在流体回路190和内部容积115具有设置于其间的隔离阀，或者经配置使得预期具有显著变化的压力的实施方式中，流体回路190和内部容积115的各者可配备有单独的压力传感器114。
凝结器160流体耦接至冷却流体源(未示出)，且配置成将通过气体导管192离开内部容积115的气态处理流体凝结。在凝结器160中的相态变化从内部容积115和流体回路190拉引处理流体，而最小化净化气体的需求。可选地，离开凝结器160的凝结的处理流体可经由隔离阀175传输通过热交换器170。热交换器170被配置成进一步冷却凝结的处理流体，使得能够更容易管理处理流体。凝结器160藉由凝结器导管168流体连接至隔离阀175。热交换器170藉由热交换器导管172耦接至隔离阀175。泵176藉由泵导管174流体连接至热交换器170，且将液化的处理流体从热交换器170泵送至容器，以用于回收、重新使用或丢弃。
一个或更多个加热器140设置于主体110上，且配置成加热批量处理腔室100的主体110。在某些实施方式中，加热器140如图1中所示设置于主体110的外表面112上。加热器140的各者可为电阻线圈、灯、陶瓷加热器、石墨基碳纤维复合物(carbon fibercomposite，CFC)加热器、不锈钢加热器或铝加热器。加热器140藉由功率源145供电。至加热器140的功率藉由控制器180而通过从温度传感器116接收的反馈来控制。温度传感器116耦接至主体110且监控主体110的温度。在一个示例中，加热器140将主体110维持在高于设置于内部容积155中的处理流体的凝结点的温度。
一个或更多个加热器146设置于主体110中，且配置成加热在批量处理腔室100的内部容积115中同时设置于盒130中的基板135。加热器146的各者可为电阻线圈、灯、陶瓷加热器、石墨基碳纤维复合物(CFC)加热器、不锈钢加热器或铝加热器。在图1所描绘的实施方式中，加热器146为电阻加热器。加热器146藉由功率源145供电。至加热器146的功率藉由控制器180而通过从温度传感器(未示出)接收的反馈来控制。温度传感器可设置在主体110中且监控内部容积115的温度。在一个示例中，加热器146可操作以在批量处理腔室100的内部容积115的热处理区域102中将设置于盒130中的基板135维持在高于300摄氏度的温度，诸如介于300摄氏度与约450摄氏度之间，或甚至诸如介于300摄氏度与约500摄氏度之间。
因为加热器146将内部容积155的热处理区域102大致维持在显著高于流体回路190的温度，所以离开流体回路190至热处理区域102中的干蒸气变得过热。过热的干蒸气有利地将不会在热处理区域102内凝结，则避免流体在处理腔室100内的经处理的基板135上凝结。
耦接至致动器(未示出)的盒130移动进出内部容积115。盒130具有顶表面132、底表面134和壁136。盒130的壁136具有多个基板存储槽138。各个基板存储槽138沿着盒130的壁136均匀地间隔开来。各个基板存储槽138被配置成将基板135保持在其中。盒130可具有多达五十个用于保持基板135的基板存储槽138。盒130对传输多个基板135进出批量处理腔室100以及对在内部容积115中处理多个基板135两者提供有效率的工具(vehicle)。
控制器180包括中央处理单元(CPU)182、存储器184和支持电路186。CPU 182可为在工业设定中可使用的任何形式的通用计算机处理器。存储器184可为随机存取存储器、只读存储器、软盘或硬盘驱动，或其他形式的数字存储。支持电路186通常耦接至CPU 182，并且可包括高速缓冲存储器(cache)、时钟电路、输入/输出系统、电源和类似者。
控制器180控制批量处理腔室100的各种部件的操作。控制器180控制气体面板150、凝结器160、泵176、入口隔离阀155、出口隔离阀165和功率源145的操作。控制器180亦通信地连接至温度传感器116、压力传感器114、冷却沟道124和温度读取装置156和162。控制器180接收选择用于处理基板的处理流体的类型作为输入。一旦藉由控制器180接收处理流体的类型之后，控制器180确定将处理流体维持在气态的目标压力和温度范围。控制器180使用来自温度传感器116、151、153、119、167、169和压力传感器114的信息，以控制加热器140、152、154、158、196、164和166的操作以及提供于内部容积115和流体回路190内的压力。藉由加热器供应的控制的热量和藉由压力控制气体提供的压力用于将设置在流体回路190和内部容积115中的处理流体维持在大于所施加压力和温度下的处理流体的凝结点的温度。控制器180使用来自压力传感器114的信息以在气体面板150中控制隔离阀315、325、345和355的操作，以优选地供应处理流体至流体回路190中，且将处理流体维持在低于所供应温度下处理流体的凝结压力的压力。内部容积115以及流体回路190的温度和压力因此得以维持，使得处理流体保持在气态。
预期处理流体根据用于在批量处理腔室100中所需的退火基板的处理需求而选择。处理流体可包括含氧和/或含氮气体，诸如氧气、蒸气、水、过氧化氢和/或氨气。对含氧和/或含氮气体的替代或额外地，处理流体可包括含硅气体，诸如但不限于有机硅、原硅酸四烷基酯(tetraalkyl orthosilicate)气体和二硅氧烷气体。在一些实施方式中，处理流体可为蒸气或干蒸气，在介于约5巴(bar)与约80巴之间的压力下，且温度可维持在介于约150摄氏度与约250摄氏度之间，或甚至高达500摄氏度。这确保了干蒸气不会在内部容积115和流体回路190中凝结成水，且额外地允许干蒸气在热处理区域102内变成过热干蒸气，其中基板135暴露于过热干蒸气用于处理。
图1A为另一批量处理腔室106的一部分的局部截面图，示出了对温度控制的流体回路190A的连接。批量处理腔室106实质上与上述的批量处理腔室106相同，不同之处在于：取代图1中所示的将温度控制的流体回路190耦接至凝结器160和气体面板150两者的单一端口117，图1A的批量处理腔室106包括将内部容积115耦接至温度控制的流体回路190A的气体面板150的第一端口117A、和将内部容积115耦接至温度控制的流体回路190A的凝结器160的第二端口117B。
温度控制的流体回路190A实质上与温度控制的流体回路190相同，其中下标A和B标示耦接至气体面板侧(A)和凝结器侧(B)的元件。不同于温度控制的流体回路190，其中将温度控制的流体回路190内的凝结器160和气体面板150通过共同腔室导管118流体耦接至腔室主体110的内部容积115，而温度控制的流体回路190A流体地隔离凝结器160和气体面板150，且通过分开的专用端口117A，B，将凝结器160和气体面板150通过分开的腔室导管118A，B分开地耦接至腔室主体110的内部容积115。
图2为用于在高温下高压退火处理单一基板的单一基板处理腔室200的简化的前截面图。单一基板处理腔室200具有主体210，主体210具有包围内部容积215的外表面212和内表面213。在一些实施方式中，例如在图2中，主体210具有环状截面，而在其他实施方式中，主体210的截面可为矩形或任何闭合的形状。主体210的外表面212可以由耐腐蚀钢(CRS)制成，诸如但不限于不锈钢。一个或更多个热屏蔽件225设置于主体210的内表面213上，而避免热从单一基板处理腔室200耗损至外侧环境中。主体210的内表面以及热屏蔽件225可以由表现出高的耐腐蚀性的镍基钢合金制成，诸如但不限于和/>
基板支撑件230设置在内部容积215内。基板支撑件230具有支架(stem)234和藉由支架234保持的基板支撑构件232。支架234穿过通过腔室主体210所形成的通道222。连接至致动器238的杆件(rod)239穿过通过腔室主体210所形成的第二通道223。杆件239耦接至板235，板235具有容纳基板支撑件230的支架234的孔236。升降销237连接至基板支撑构件232。致动器238致动杆件239，使得板235向上或向下移动以连接和脱离升降销237。随着升降销237的上升或下降，基板支撑构件232在腔室200的内部容积215内上升或下降。基板支撑构件232具有安装于其中心内的电阻加热元件231。功率源233被配置成对电阻加热元件231供电。功率源233以及致动器238的操作藉由控制器280控制。
单一基板处理腔室200在主体210上具有开口211，一个或更多个基板220可通过此开口211装载及卸载进出设置于内部容积215中的基板支撑件230。开口211在主体210上形成隧道(tunnel)221。狭缝阀228被配置成密封地关闭隧道221，使得仅当狭缝阀228开启时可进入开口211和内部容积215。高压密封件227用于将狭缝阀228密封至主体210，以便密封内部容积215用于处理。高压密封件227可以由聚合物制成，例如含氟聚合物，诸如但不限于全氟弹性体和聚四氟乙烯(PTFE)。高压密封件227可进一步包括弹簧构件，用于偏置密封件以改善密封性能。冷却沟道224设置在隧道221上邻近于高压密封件227，以便在处理期间维持高压密封件227低于高压密封件227的最大安全操作温度。来自冷却流体源226的冷却剂，诸如但不限于惰性气体、介电流体和高性能传热流体，可在冷却沟道224内循环。来自冷却流体源226的冷却剂的流动藉由控制器280通过从温度传感器216或流量传感器(未示出)所接收的反馈来控制。环状热扼流圈(thermal choke)229形成于隧道221四周，以避免当狭缝阀228开启时，来自内部容积215的热流动通过开口211。
单一基板处理腔室200具有通过主体210的端口217，端口217流体连接至流体回路290，流体回路290连接气体面板250、凝结器260和端口217。流体回路290具有与流体回路190实质上类似的部件，且以与流体回路190实质上类似的方式起作用。流体回路290具有气体导管292、源导管257、入口隔离阀255、排气导管263和出口隔离阀265。数个加热器296、258、252、254、264、266与流体回路290的不同部分接合。数个温度传感器251、253、219、267和269亦放置在流体回路290的不同部分处，以进行温度测量且将信息发送至控制器280。控制器280使用温度测量信息以控制加热器252、254、258、296、264和266的操作，使得流体回路290的温度维持在高于设置在流体回路290和内部容积215中的处理流体的凝结点的温度。
气体面板250和压力传感器214在本质及功能上与气体面板150和压力传感器114实质上类似。凝结器260在本质及功能上与凝结器160实质上类似。泵270在本质及功能上与泵176实质上类似。一个或更多个加热器240设置于主体210上，且被配置成在单一基板处理腔室200内加热内部容积215。加热器240亦在本质及功能上与批量处理腔室100中所使用的加热器140实质上类似。
控制器280控制单一基板处理腔室200的操作。控制器280控制气体面板250、凝结器260、泵270、入口隔离阀255、出口隔离阀265、功率源233及245的操作。控制器280亦通信地连接至温度传感器216、压力传感器214、致动器238、冷却流体源226及温度读取装置256及262。控制器280在本质及功能上与批量处理腔室100中所使用的控制器180实质上类似。
批量处理腔室100提供便利的处理腔室以在高压下使用处理流体于高温下实行一个或更多个基板的退火的方法。加热器140被供电以加热处理腔室100且将内部容积115维持在高于处理流体的凝结点的温度。同时，加热器152、154、158、196、164及166被供电以加热流体回路190。
多个基板135装载在待放置于批量处理腔室100中的盒130上。开启批量处理腔室100的门120且将盒130移动至内部容积115中。接着关闭门120以将基板135密封在处理腔室100内。一旦门120被关闭之后，密封件122确保从内部容积115不会有渗漏。
藉由气体面板150提供处理流体至处理腔室100内侧所界定的内部容积115中。开启入口隔离阀155以允许处理流体流动通过源导管157和气体导管192至内部容积115中。此时出口隔离阀165保持关闭。对处理流体所施加的压力可逐渐的增加。当足够量的处理流体存在于内部容积115中时，关闭入口隔离阀155。或者，在处理基板135的同时，可连续流动处理流体通过内部容积115。
在处理期间，内部容积115以及流体回路190维持在一温度及压力下，使得处理流体维持在气态。内部容积115以及流体回路190的温度维持在大于处理流体所施加的压力下的凝结点的温度。内部容积115以及流体回路190维持在小于处理流体所施加的温度下的凝结压力的压力。
当基板135在处理条件下通过暴露于处理流体而已达到期望效果时，处理完成。接着开启出口隔离阀165以从内部容积115流动处理流体通过气体导管192及排气导管163至凝结器160中。处理流体在凝结器160中凝结成液态。可选的热交换器170可进一步冷却液态处理流体以便于流体的处置。凝结的处理流体接着藉由泵176移除。当凝结的处理流体被移除时，关闭出口隔离阀165。当出口隔离阀165对凝结器160开启的同时，加热器140、152、154、158、196、164及166将流体回路内的处理流体维持在气态，以避免流体回路内的凝结。接着开启批量处理腔室100的门120，以从内部容积115移除基板135。
单一基板处理腔室200与批量处理腔室100以实质上相同的方式操作。单一基板处理腔室200用于退火放置于基板支撑件230上的单一基板220。开启狭缝阀228以通过隧道221将基板220装载至内部容积215中的基板支撑件230。当将处理流体传送至内部容积215的同时，加热器252、254、258、296、264及266将流体回路内的处理流体维持在气态。
图4是根据本公开内容的一个实施方式，在处理腔室中退火一个或更多个基板的方法400的方块图。方法400在方块410处开始，将一个或更多个基板装载至处理腔室的处理区域中。举例而言，可将单一基板装载在单一基板处理腔室中设置的基板支撑件上。或者，多个基板可被装载在放置于批量处理腔室中的盒上。
于方块420处，处理流体流动通过气体导管至单一基板处理腔室或批量处理腔室内的处理区域中。在一些实施方式中，处理流体可为在高压下的处理流体。在退火处理期间，单一基板或多个基板暴露于高温下的处理流体。在完成处理之后，通过气体导管从处理区域移除处理流体，且藉由凝结器凝结成液态。凝结的处理流体随后藉由泵移除。
在方块430处，气体导管中的处理流体维持在高于处理流体的凝结点的温度。气体导管耦接至一个或更多个加热器，所述一个或更多个加热器配置成将流动通过气体导管的处理流体维持在高于处理流体的凝结点的温度，使得处理流体保持在气态。在一些实施方式中，加热器可包括藉由功率源供电的电阻加热元件。气体导管具有一个或更多个温度传感器，所述温度传感器可操作以测量气体导管的温度。将来自气体导管的温度测量发送至控制器，此控制器使用信息以控制气体导管上加热器的操作。
经选择以用于处理基板的处理流体的类型被输入至控制器的用户界面中或经由另一通道提供至控制器。控制器使用来自温度及压力传感器的信息，以控制与流体回路及腔室主体的不同部分接合的加热器的操作，且将流体回路及处理区域中存在的处理流体维持在大于对所感测压力的处理流体的凝结点的温度。控制器亦使用来自耦接至腔室主体的温度及压力传感器的信息，以控制处理流体及来自气体面板的压力控制气体流动至流体回路中，且将处理流体维持在小于对所感测温度的处理流体的凝结压力的压力。处理区域以及流体回路的温度及压力因此得以维持，使得处理流体保持在气态。在一个示例中，压力维持在约5巴与约35巴之间，同时温度维持在约150摄氏度与约250摄氏度之间，使得处理流体主要为蒸气的形式而保持在气态。
在处理腔室100、200中使用的流体回路190、290提供以下优点：将处理流体的温度控制且维持在高于流动通过流体回路190、290至高压退火腔室中的处理流体的凝结点的温度。耦接至流体回路190、290的不同部分的数个加热器和温度传感器帮助控制器180、280控制且维持供应至处理腔室100、200中的流体回路190、290和内部容积115、215的热。结果，避免处理流体的凝结且将处理流体维持在气态。
批量处理腔室100允许多个基板在相同条件下同时以批量的方式退火，因此降低处理各个基板的成本。另一方面，单一基板处理腔室200允许更有效率的基板处理，因此对待退火的各个基板提供优越的基板温度控制。此外，单一基板处理腔室200可立即与真空群集处理工具集成，因此提供有效率的基板处理及装置集成所需的处理腔室的集成。
尽管以上涉及本公开内容的具体实施方式，应理解这些实施方式仅为原理的说明和本发明的应用。因此应理解可在不背离由所附权利要求限定的本发明的精神和范围的情况下，对图示实施方式进行各种修改以实现其他实施方式。
Claims (20)
1.一种用于在高压高温下退火基板的批量处理腔室，包括：
腔室主体，所述腔室主体包围内部容积，所述内部容积配置成容纳设置于其中的多个基板；
气体面板，所述气体面板配置成提供处理流体至所述内部容积中；
凝结器，所述凝结器流体连接至所述内部容积，所述凝结器配置成将所述处理流体凝结成液态；和
温度控制的流体回路，所述温度控制的流体回路配置成将所述处理流体维持在高于所述处理流体的凝结点的温度，所述温度控制的流体回路包括：
气体导管，所述气体导管在第一端流体耦接至所述腔室主体上的端口、在第二端流体耦接至所述气体面板且在第三端流体耦接至所述凝结器。
2.如权利要求1所述的批量处理腔室，其中所述温度控制的流体回路进一步包括：
源导管，所述源导管在第一端流体耦接至所述气体面板，且在第二端藉由入口隔离阀流体耦接至所述气体导管。
3.如权利要求1所述的批量处理腔室，所述腔室主体进一步包括：
一个或更多个温度传感器，所述一个或更多个温度传感器可操作以测量所述气体导管的温度。
4.如权利要求1所述的批量处理腔室，进一步包括：
冷却沟道，所述冷却沟道设置成邻近于门。
5.如权利要求1所述的批量处理腔室，其中所述腔室主体由镍基超合金制成。
6.如权利要求1所述的批量处理腔室，进一步包括：
抗对流板，所述抗对流板设置在所述腔室主体中。
7.如权利要求2所述的批量处理腔室，其中所述温度控制的流体回路进一步包括：
排气导管，所述排气导管在第一端流体耦接至所述凝结器，且在第二端藉由出口隔离阀流体耦接至所述气体导管。
8.如权利要求7所述的批量处理腔室，其中所述温度控制的流体回路进一步包括：
一个或更多个加热器，所述一个或更多个加热器耦接至所述源导管、所述排气导管和所述气体导管的各者，所述一个或更多个加热器配置成将流动通过所述源导管、所述排气导管和所述气体导管的所述处理流体维持在高于流动通过所述温度控制的流体回路的所述处理流体的凝结点的温度。
9.如权利要求4所述的批量处理腔室，其中所述门被配置成密封地关闭所述腔室主体。
10.如权利要求6所述的批量处理腔室，其中所述抗对流板将所述内部容积分隔成热处理区域和较冷处理区域，所述基板在所述热处理区域中被处理，且所述较冷处理区域靠近腔室主体门。
11.一种在根据权利要求1至10中任一项所述的批量处理腔室中退火基板的方法，所述方法包括以下步骤：
将多个基板装载至所述批量处理腔室的所述内部容积中；
将处理流体流动通过所述气体导管至所述内部容积中；和
将所述气体导管和所述内部容积中的所述处理流体维持在高于所述处理流体的凝结点的温度。
12.如权利要求11所述的方法，进一步包括以下步骤：
将所述内部容积中的所述处理流体维持在高于所述气体导管中的所述处理流体的温度。
13.如权利要求11所述的方法，进一步包括以下步骤：
将所述气体导管中的所述处理流体维持在高于150摄氏度的温度。
14.如权利要求11所述的方法，进一步包括以下步骤：
将所述基板维持在介于350摄氏度与500摄氏度之间的温度。
15.如权利要求11所述的方法，进一步包括以下步骤：
将所述内部容积中的所述处理流体维持在高于5巴的压力。
16.如权利要求11所述的方法，进一步包括以下步骤：
将所述内部容积中的所述处理流体维持在介于5巴与80巴之间的压力。
17.如权利要求11所述的方法，其中将所述处理流体流动至所述内部容积中的步骤包括以下步骤：
将干蒸气流动至所述批量处理腔室中。
18.如权利要求17所述的方法，进一步包括以下步骤：
将所述多个基板暴露于过热干蒸气。
19.如权利要求11所述的方法，其中将所述处理流体流动至所述内部容积中的步骤包括以下步骤：
将以下至少一者流动至所述批量处理腔室中：含氧气体、含氮气体、或含硅气体。
20.如权利要求11所述的方法，进一步包括以下步骤：
使所述处理流体从所述内部容积流动通过所述气体导管。
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| US20200243345A1 (en) | 2020-07-30 |
| WO2019036157A1 (en) | 2019-02-21 |
| TW201913827A (zh) | 2019-04-01 |
| JP2020532106A (ja) | 2020-11-05 |
| US20200234973A1 (en) | 2020-07-23 |
| CN111095513A (zh) | 2020-05-01 |
| JP6947914B2 (ja) | 2021-10-13 |
| US11462417B2 (en) | 2022-10-04 |
| US10636677B2 (en) | 2020-04-28 |
| US11469113B2 (en) | 2022-10-11 |
| US20190057879A1 (en) | 2019-02-21 |
| KR102405723B1 (ko) | 2022-06-07 |
| KR20200032269A (ko) | 2020-03-25 |
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