JP7274461B2 - 保護バリア層を使用して半導体構造を製造する装置および方法 - Google Patents
保護バリア層を使用して半導体構造を製造する装置および方法 Download PDFInfo
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- JP7274461B2 JP7274461B2 JP2020514961A JP2020514961A JP7274461B2 JP 7274461 B2 JP7274461 B2 JP 7274461B2 JP 2020514961 A JP2020514961 A JP 2020514961A JP 2020514961 A JP2020514961 A JP 2020514961A JP 7274461 B2 JP7274461 B2 JP 7274461B2
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- 239000004065 semiconductor Substances 0.000 title claims description 98
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 230000009969 flowable effect Effects 0.000 claims description 27
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
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- XBRVPWBNRAPVCC-UHFFFAOYSA-N 4,6,11-trioxa-1-aza-5$l^{3}-silabicyclo[3.3.3]undecane Chemical compound C1CO[Si]2OCCN1CCO2 XBRVPWBNRAPVCC-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- DZLQWMNVOBAZGC-UHFFFAOYSA-N 5-methyl-4,6,11-trioxa-1-aza-5-silabicyclo[3.3.3]undecane Chemical compound O1CCN2CCO[Si]1(C)OCC2 DZLQWMNVOBAZGC-UHFFFAOYSA-N 0.000 description 1
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
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- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
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- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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Description
Claims (12)
- 基板を処理する方法であって、
基板上に半導体構造を形成することであり、前記半導体構造がシリコン(Si)含有層またはシリコンゲルマニウム(SiGe)層を含む、半導体構造を形成することと、
ライナ堆積プロセスを実行して前記半導体構造の上にライナ層を形成することと、
流動層堆積プロセスを実行して前記ライナ層の上に流動性誘電体層を堆積させることであって、前記流動層堆積プロセスが、摂氏0度~摂氏約100度の温度で約1トル~約10トルのチャンバ圧力において、シリコン含有前駆体および酸素系ラジカル前駆体を反応させることを含み、前記シリコン含有前駆体がトリシリルアミンを含む、流動性誘電体層を堆積させることと、
前記流動性誘電体層の表面を高圧蒸気に露出させることによってアニーリングプロセスを実行することとを含み、前記ライナ層の少なくとも一部分の厚さが、前記アニーリングプロセス中の酸化によって徐々に低減される、方法。 - 前記ライナ層の厚さが、前記アニーリングプロセスが完了した後に残っている前記ライナ層の厚さに基づいて判定される、請求項1に記載の方法。
- 前記ライナ層の厚さが、前記流動性誘電体層のアニーリング時間、アニーリング温度、および厚さのうちの少なくとも1つに基づいて判定され、前記ライナ層の前記厚さが実質上ゼロになる、請求項1に記載の方法。
- 前記ライナ層が、窒化ケイ素または酸窒化ケイ素から形成される、請求項1に記載の方法。
- 前記アニーリングプロセスが、約1バール~約60バールの圧力で摂氏約200度~摂氏約600度の温度のアニーリングチャンバ内で、約5分~約120分の時間にわたって、前記流動性誘電体層を高圧蒸気に露出させることを含む、請求項1に記載の方法。
- 前記アニーリングプロセスが、高圧乾燥蒸気アニーリングプロセスである、請求項1に記載の方法。
- 基板を処理する方法であって、
基板上に半導体構造を形成することであり、前記半導体構造がシリコン(Si)含有層またはシリコンゲルマニウム(SiGe)層を含む、半導体構造を形成することと、
ライナ堆積プロセスを実行して前記半導体構造の上にライナ層を形成することと、
流動層堆積プロセスを実行して前記ライナ層の上に流動性誘電体層を堆積させることであって、前記流動層堆積プロセスが、摂氏約0度~摂氏約100度の温度で約1トル~約10トルのチャンバ圧力において、シリコン含有前駆体および酸素系ラジカル前駆体を反応させることを含み、前記シリコン含有前駆体がトリシリルアミンを含む、流動性誘電体層を堆積させることと、
前記流動性誘電体層の表面を高圧蒸気に露出させることによってアニーリングプロセスを実行することとを含み、前記ライナ層が、前記アニーリングプロセス中の前記Si含有層またはSiGe層の酸化を防止し、前記ライナ層の少なくとも一部分の厚さが、前記アニーリングプロセス中の酸化によって徐々に低減される、方法。 - 前記ライナ層の厚さが、前記アニーリングプロセスが完了した後に残っている前記ライナ層の厚さに基づいて判定される、請求項7に記載の方法。
- 前記ライナ層の厚さが、前記流動性誘電体層のアニーリング時間、アニーリング温度、および厚さのうちの少なくとも1つに基づいて判定される、請求項7に記載の方法。
- 前記ライナ層の厚さが、前記アニーリングプロセス後に残っている前記ライナ層の厚さが実質上ゼロに等しくなるように判定され、前記ライナ層が、窒化ケイ素または酸窒化ケイ素から形成される、請求項7に記載の方法。
- 前記アニーリングプロセスが、約1バール~約60バールの圧力で摂氏約200度~摂氏約600度の温度のアニーリングチャンバ内で、約5分~約120分の時間にわたって、前記流動性誘電体層を高圧蒸気に露出させることを含む、請求項7に記載の方法。
- 前記アニーリングプロセスが、高圧乾燥蒸気アニーリングプロセスである、請求項7に記載の方法。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188182A (ja) | 2001-12-17 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
JP2005347636A (ja) | 2004-06-04 | 2005-12-15 | Az Electronic Materials Kk | トレンチ・アイソレーション構造の形成方法 |
JP2012231007A (ja) | 2011-04-26 | 2012-11-22 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2013517616A (ja) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
JP2013533639A (ja) | 2010-07-30 | 2013-08-22 | アプライド マテリアルズ インコーポレイテッド | 流動性cvdによる間隙充填用の酸化物を多く含むライナ層 |
US20160336405A1 (en) | 2015-05-11 | 2016-11-17 | Applied Materials, Inc. | Horizontal gate all around and finfet device isolation |
Family Cites Families (354)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4524587A (en) | 1967-01-10 | 1985-06-25 | Kantor Frederick W | Rotary thermodynamic apparatus and method |
US3758316A (en) | 1971-03-30 | 1973-09-11 | Du Pont | Refractory materials and process for making same |
US3749383A (en) | 1971-04-29 | 1973-07-31 | Rca Corp | Apparatus for processing semiconductor devices |
US4576652A (en) | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
JPS634616A (ja) | 1986-06-25 | 1988-01-09 | Hitachi Tokyo Electron Co Ltd | 蒸気処理装置 |
JPH0748489B2 (ja) | 1987-07-27 | 1995-05-24 | 富士通株式会社 | プラズマ処理装置 |
US4879259A (en) | 1987-09-28 | 1989-11-07 | The Board Of Trustees Of The Leland Stanford Junion University | Rapid thermal annealing of gallium arsenide with trimethyl arsenic overpressure |
CA1308496C (en) | 1988-02-18 | 1992-10-06 | Rajiv V. Joshi | Deposition of tungsten on silicon in a non-self-limiting cvd process |
US5114513A (en) | 1988-10-27 | 1992-05-19 | Omron Tateisi Electronics Co. | Optical device and manufacturing method thereof |
US5167717A (en) | 1989-02-15 | 1992-12-01 | Charles Boitnott | Apparatus and method for processing a semiconductor wafer |
JP2730695B2 (ja) | 1989-04-10 | 1998-03-25 | 忠弘 大見 | タングステン膜の成膜装置 |
US5126117A (en) | 1990-05-22 | 1992-06-30 | Custom Engineered Materials, Inc. | Device for preventing accidental releases of hazardous gases |
US5175123A (en) | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
US5050540A (en) | 1991-01-29 | 1991-09-24 | Arne Lindberg | Method of gas blanketing a boiler |
JP2996524B2 (ja) | 1991-03-18 | 2000-01-11 | 松下電子工業株式会社 | ポリイミド硬化装置 |
US5314541A (en) | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
JPH0521310A (ja) | 1991-07-11 | 1993-01-29 | Canon Inc | 微細パタン形成方法 |
JPH05129296A (ja) | 1991-11-05 | 1993-05-25 | Fujitsu Ltd | 導電膜の平坦化方法 |
US5300320A (en) | 1992-06-23 | 1994-04-05 | President And Fellows Of Harvard College | Chemical vapor deposition from single organometallic precursors |
US5319212A (en) | 1992-10-07 | 1994-06-07 | Genus, Inc. | Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors |
JPH06283496A (ja) | 1993-03-26 | 1994-10-07 | Dainippon Screen Mfg Co Ltd | 洗浄処理後の基板の乾燥処理装置 |
US5607002A (en) | 1993-04-28 | 1997-03-04 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
US5578132A (en) | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
JPH0766424A (ja) | 1993-08-20 | 1995-03-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US5880041A (en) | 1994-05-27 | 1999-03-09 | Motorola Inc. | Method for forming a dielectric layer using high pressure |
US5597439A (en) | 1994-10-26 | 1997-01-28 | Applied Materials, Inc. | Process gas inlet and distribution passages |
US5808245A (en) | 1995-01-03 | 1998-09-15 | Donaldson Company, Inc. | Vertical mount catalytic converter muffler |
JPH08195493A (ja) | 1995-01-13 | 1996-07-30 | Toshiba Corp | 薄膜トランジスタの製造方法 |
US5620524A (en) | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
US5858051A (en) | 1995-05-08 | 1999-01-12 | Toshiba Machine Co., Ltd. | Method of manufacturing optical waveguide |
JP2872637B2 (ja) | 1995-07-10 | 1999-03-17 | アプライド マテリアルズ インコーポレイテッド | マイクロ波プラズマベースアプリケータ |
US5857368A (en) | 1995-10-06 | 1999-01-12 | Applied Materials, Inc. | Apparatus and method for fabricating metal paths in semiconductor substrates through high pressure extrusion |
JPH09296267A (ja) | 1995-11-21 | 1997-11-18 | Applied Materials Inc | 高圧押出しによる、半導体基板における金属パスの製造装置および方法 |
US5677230A (en) | 1995-12-01 | 1997-10-14 | Motorola | Method of making wide bandgap semiconductor devices |
US5895274A (en) | 1996-01-22 | 1999-04-20 | Micron Technology, Inc. | High-pressure anneal process for integrated circuits |
KR980012044A (ko) | 1996-03-01 | 1998-04-30 | 히가시 데츠로 | 기판건조장치 및 기판건조방법 |
US5998305A (en) | 1996-03-29 | 1999-12-07 | Praxair Technology, Inc. | Removal of carbon from substrate surfaces |
US5738915A (en) | 1996-09-19 | 1998-04-14 | Lambda Technologies, Inc. | Curing polymer layers on semiconductor substrates using variable frequency microwave energy |
US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
US6082950A (en) | 1996-11-18 | 2000-07-04 | Applied Materials, Inc. | Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding |
US5886864A (en) | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
KR100560049B1 (ko) | 1997-05-10 | 2006-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막방법 |
JP2976931B2 (ja) | 1997-06-04 | 1999-11-10 | 日本電気株式会社 | 半導体装置の製造方法 |
US6136664A (en) | 1997-08-07 | 2000-10-24 | International Business Machines Corporation | Filling of high aspect ratio trench isolation |
US20030049372A1 (en) | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US5963817A (en) | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
JP3199006B2 (ja) | 1997-11-18 | 2001-08-13 | 日本電気株式会社 | 層間絶縁膜の形成方法および絶縁膜形成装置 |
US6442980B2 (en) | 1997-11-26 | 2002-09-03 | Chart Inc. | Carbon dioxide dry cleaning system |
US6846739B1 (en) | 1998-02-27 | 2005-01-25 | Micron Technology, Inc. | MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer |
US6164412A (en) | 1998-04-03 | 2000-12-26 | Arvin Industries, Inc. | Muffler |
JPH11354515A (ja) | 1998-06-04 | 1999-12-24 | Ishikawajima Harima Heavy Ind Co Ltd | 加圧式加熱炉 |
US6719516B2 (en) | 1998-09-28 | 2004-04-13 | Applied Materials, Inc. | Single wafer load lock with internal wafer transport |
US20030101938A1 (en) | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
JP2002541664A (ja) | 1999-04-02 | 2002-12-03 | シリコン ヴァレイ グループ サーマル システムズ リミテッド ライアビリティ カンパニー | 側壁ライナー酸化成長前にトレンチ充填酸化物を付着させるためのトレンチ分離方法。 |
US6468490B1 (en) | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
US6334266B1 (en) | 1999-09-20 | 2002-01-01 | S.C. Fluids, Inc. | Supercritical fluid drying system and method of use |
US6612317B2 (en) | 2000-04-18 | 2003-09-02 | S.C. Fluids, Inc | Supercritical fluid delivery and recovery system for semiconductor wafer processing |
ATE418158T1 (de) | 1999-08-17 | 2009-01-15 | Applied Materials Inc | Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung |
US6299753B1 (en) | 1999-09-01 | 2001-10-09 | Applied Materials, Inc. | Double pressure vessel chemical dispenser unit |
JP2001110729A (ja) | 1999-10-06 | 2001-04-20 | Mitsubishi Heavy Ind Ltd | 半導体素子の連続製造装置 |
US20030148631A1 (en) | 1999-11-08 | 2003-08-07 | Taiwan Semiconductor Manufacturing Company | Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile |
US6500603B1 (en) | 1999-11-11 | 2002-12-31 | Mitsui Chemicals, Inc. | Method for manufacturing polymer optical waveguide |
TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
US6150286A (en) | 2000-01-03 | 2000-11-21 | Advanced Micro Devices, Inc. | Method of making an ultra thin silicon nitride film |
US6541367B1 (en) | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
JP2001250787A (ja) | 2000-03-06 | 2001-09-14 | Hitachi Kokusai Electric Inc | 基板処理装置および基板処理方法 |
US20040025908A1 (en) | 2000-04-18 | 2004-02-12 | Stephen Douglas | Supercritical fluid delivery system for semiconductor wafer processing |
US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6797336B2 (en) | 2001-03-22 | 2004-09-28 | Ambp Tech Corporation | Multi-component substances and processes for preparation thereof |
JP4335469B2 (ja) | 2001-03-22 | 2009-09-30 | 株式会社荏原製作所 | 真空排気装置のガス循環量調整方法及び装置 |
TW544797B (en) | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
JP2002319571A (ja) | 2001-04-20 | 2002-10-31 | Kawasaki Microelectronics Kk | エッチング槽の前処理方法及び半導体装置の製造方法 |
US7080651B2 (en) | 2001-05-17 | 2006-07-25 | Dainippon Screen Mfg. Co., Ltd. | High pressure processing apparatus and method |
US6752585B2 (en) | 2001-06-13 | 2004-06-22 | Applied Materials Inc | Method and apparatus for transferring a semiconductor substrate |
EP1271636A1 (en) | 2001-06-22 | 2003-01-02 | Infineon Technologies AG | Thermal oxidation process control by controlling oxidation agent partial pressure |
US20080268635A1 (en) | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP2003051474A (ja) | 2001-08-03 | 2003-02-21 | Kobe Steel Ltd | 高圧処理装置 |
US6531412B2 (en) | 2001-08-10 | 2003-03-11 | International Business Machines Corporation | Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications |
US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
JP2003077974A (ja) | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
US6619304B2 (en) | 2001-09-13 | 2003-09-16 | Micell Technologies, Inc. | Pressure chamber assembly including non-mechanical drive means |
US6906761B2 (en) | 2001-09-19 | 2005-06-14 | Keiwa Inc. | Reflection sheet and backlight unit using the same |
US7105061B1 (en) | 2001-11-07 | 2006-09-12 | Novellus Systems, Inc. | Method and apparatus for sealing substrate load port in a high pressure reactor |
US20030098069A1 (en) | 2001-11-26 | 2003-05-29 | Sund Wesley E. | High purity fluid delivery system |
JP2003166065A (ja) | 2001-11-30 | 2003-06-13 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
KR100450564B1 (ko) | 2001-12-20 | 2004-09-30 | 동부전자 주식회사 | 반도체 소자의 금속 배선 후처리 방법 |
JP2003188387A (ja) | 2001-12-20 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
US6848458B1 (en) | 2002-02-05 | 2005-02-01 | Novellus Systems, Inc. | Apparatus and methods for processing semiconductor substrates using supercritical fluids |
US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
US6835503B2 (en) | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7638727B2 (en) | 2002-05-08 | 2009-12-29 | Btu International Inc. | Plasma-assisted heat treatment |
US7521089B2 (en) | 2002-06-13 | 2009-04-21 | Tokyo Electron Limited | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers |
US6846380B2 (en) | 2002-06-13 | 2005-01-25 | The Boc Group, Inc. | Substrate processing apparatus and related systems and methods |
US20070243317A1 (en) | 2002-07-15 | 2007-10-18 | Du Bois Dale R | Thermal Processing System and Configurable Vertical Chamber |
US7335609B2 (en) | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
US20070212850A1 (en) | 2002-09-19 | 2007-09-13 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
JP2004127958A (ja) | 2002-09-30 | 2004-04-22 | Kyoshin Engineering:Kk | 高圧アニール水蒸気処理を行なう装置及び方法 |
US20040060519A1 (en) | 2002-10-01 | 2004-04-01 | Seh America Inc. | Quartz to quartz seal using expanded PTFE gasket material |
US6889508B2 (en) | 2002-10-02 | 2005-05-10 | The Boc Group, Inc. | High pressure CO2 purification and supply system |
US7270761B2 (en) | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
CN1317741C (zh) | 2002-11-25 | 2007-05-23 | 光洋热系统株式会社 | 半导体处理装置用电加热器 |
US20040112409A1 (en) | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
KR101058882B1 (ko) | 2003-02-04 | 2011-08-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 초-저압에서 암모니아를 이용한 급속 열 어닐링을 통한 실리콘 옥시질화물의 질소 프로파일 테일러링 |
JP3956049B2 (ja) | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
US7079760B2 (en) | 2003-03-17 | 2006-07-18 | Tokyo Electron Limited | Processing system and method for thermally treating a substrate |
JP2006526125A (ja) | 2003-05-13 | 2006-11-16 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバの開口を封止するための方法および装置 |
US6939794B2 (en) | 2003-06-17 | 2005-09-06 | Micron Technology, Inc. | Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device |
US7226512B2 (en) | 2003-06-18 | 2007-06-05 | Ekc Technology, Inc. | Load lock system for supercritical fluid cleaning |
WO2005007283A2 (en) | 2003-07-08 | 2005-01-27 | Sundew Technologies, Llc | Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement |
JP4173781B2 (ja) | 2003-08-13 | 2008-10-29 | 株式会社神戸製鋼所 | 高圧処理方法 |
JP4443879B2 (ja) | 2003-09-03 | 2010-03-31 | 株式会社協真エンジニアリング | 高精度高圧アニール装置 |
WO2005057663A2 (en) | 2003-12-10 | 2005-06-23 | Koninklijke Philips Electronics N.V. | Method and apparatus for fabrication of metal-oxide semiconductor integrated circuit devices |
US20050136684A1 (en) | 2003-12-23 | 2005-06-23 | Applied Materials, Inc. | Gap-fill techniques |
TW200527491A (en) | 2003-12-23 | 2005-08-16 | John C Schumacher | Exhaust conditioning system for semiconductor reactor |
US7158221B2 (en) | 2003-12-23 | 2007-01-02 | Applied Materials, Inc. | Method and apparatus for performing limited area spectral analysis |
US20050250347A1 (en) | 2003-12-31 | 2005-11-10 | Bailey Christopher M | Method and apparatus for maintaining by-product volatility in deposition process |
US7030468B2 (en) | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
JP4393268B2 (ja) | 2004-05-20 | 2010-01-06 | 株式会社神戸製鋼所 | 微細構造体の乾燥方法 |
US20050269291A1 (en) | 2004-06-04 | 2005-12-08 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
KR100536809B1 (ko) * | 2004-06-22 | 2005-12-14 | 동부아남반도체 주식회사 | 반도체 소자 및 그 제조 방법 |
US7521378B2 (en) | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
US7422776B2 (en) * | 2004-08-24 | 2008-09-09 | Applied Materials, Inc. | Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) |
US7491658B2 (en) | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US7427571B2 (en) | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
WO2006055984A2 (en) | 2004-11-22 | 2006-05-26 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
KR100697280B1 (ko) | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | 반도체 제조 설비의 압력 조절 방법 |
CN101128622B (zh) | 2005-02-22 | 2010-08-25 | 埃克提斯公司 | 具有副腔的蚀刻腔 |
US7211525B1 (en) | 2005-03-16 | 2007-05-01 | Novellus Systems, Inc. | Hydrogen treatment enhanced gap fill |
WO2006101315A1 (en) | 2005-03-21 | 2006-09-28 | Pkl Co., Ltd. | Device and method for cleaning photomask |
US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US20120060868A1 (en) | 2005-06-07 | 2012-03-15 | Donald Gray | Microscale fluid delivery system |
CN101198903B (zh) | 2005-06-10 | 2011-09-07 | 奥贝达克特公司 | 利用中间印模的图案复制 |
JP4747693B2 (ja) | 2005-06-28 | 2011-08-17 | 住友電気工業株式会社 | 樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法 |
US7361231B2 (en) | 2005-07-01 | 2008-04-22 | Ekc Technology, Inc. | System and method for mid-pressure dense phase gas and ultrasonic cleaning |
WO2007018016A1 (ja) | 2005-08-05 | 2007-02-15 | Hitachi Kokusai Electric Inc. | 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法 |
US7534080B2 (en) | 2005-08-26 | 2009-05-19 | Ascentool, Inc. | Vacuum processing and transfer system |
US7531404B2 (en) | 2005-08-30 | 2009-05-12 | Intel Corporation | Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
US8926731B2 (en) | 2005-09-13 | 2015-01-06 | Rasirc | Methods and devices for producing high purity steam |
KR100696178B1 (ko) | 2005-09-13 | 2007-03-20 | 한국전자통신연구원 | 광 도파로 마스터 및 그 제조 방법 |
CN101268012B (zh) | 2005-10-07 | 2012-12-26 | 株式会社尼康 | 微小构造体及其制造方法 |
US7794667B2 (en) | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
US8306026B2 (en) | 2005-12-15 | 2012-11-06 | Toshiba America Research, Inc. | Last hop topology sensitive multicasting key management |
US20070187386A1 (en) | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
US7578258B2 (en) | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
JP2007242791A (ja) | 2006-03-07 | 2007-09-20 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2007133595A2 (en) | 2006-05-08 | 2007-11-22 | The Board Of Trustees Of The University Of Illinois | Integrated vacuum absorption steam cycle gas separation |
US7825038B2 (en) | 2006-05-30 | 2010-11-02 | Applied Materials, Inc. | Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen |
US7650965B2 (en) | 2006-06-09 | 2010-01-26 | Emcon Technologies Llc | Exhaust system |
JP2008073611A (ja) | 2006-09-21 | 2008-04-03 | Dainippon Screen Mfg Co Ltd | 高圧処理装置 |
JP4814038B2 (ja) | 2006-09-25 | 2011-11-09 | 株式会社日立国際電気 | 基板処理装置および反応容器の着脱方法 |
TW200830034A (en) | 2006-10-13 | 2008-07-16 | Asahi Glass Co Ltd | Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method |
US7790587B2 (en) | 2006-11-07 | 2010-09-07 | Intel Corporation | Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
JP2008153635A (ja) | 2006-11-22 | 2008-07-03 | Toshiba Matsushita Display Technology Co Ltd | Mos型半導体素子の製造方法 |
US20080169183A1 (en) | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
JP2008192642A (ja) | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
US20080233404A1 (en) | 2007-03-22 | 2008-09-25 | 3M Innovative Properties Company | Microreplication tools and patterns using laser induced thermal embossing |
JP5135856B2 (ja) | 2007-03-31 | 2013-02-06 | 東京エレクトロン株式会社 | トラップ装置、排気系及びこれを用いた処理システム |
US20080241384A1 (en) | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
DE102007017641A1 (de) | 2007-04-13 | 2008-10-16 | Infineon Technologies Ag | Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder |
CN101690400B (zh) | 2007-04-30 | 2011-11-30 | 伊菲雷知识产权公司 | 用于厚膜介质电致发光显示器的层状厚膜介质结构 |
KR101560705B1 (ko) | 2007-05-25 | 2015-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 전자 디바이스 제조 시스템들을 조립하고 작동시키는 방법들 및 장치 |
US20090018688A1 (en) | 2007-06-15 | 2009-01-15 | Applied Materials, Inc. | Methods and systems for designing and validating operation of abatement systems |
CN101330035B (zh) * | 2007-06-18 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构及其制造方法 |
KR101442238B1 (ko) | 2007-07-26 | 2014-09-23 | 주식회사 풍산마이크로텍 | 고압 산소 열처리를 통한 반도체 소자의 제조방법 |
US7951728B2 (en) | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
US7867923B2 (en) | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
US7541297B2 (en) | 2007-10-22 | 2009-06-02 | Applied Materials, Inc. | Method and system for improving dielectric film quality for void free gap fill |
US7803722B2 (en) | 2007-10-22 | 2010-09-28 | Applied Materials, Inc | Methods for forming a dielectric layer within trenches |
CN101835521A (zh) | 2007-10-26 | 2010-09-15 | 应用材料公司 | 利用改进燃料线路的用于智能减废的方法与设备 |
JP5299605B2 (ja) | 2007-11-19 | 2013-09-25 | 日揮触媒化成株式会社 | 低誘電率シリカ系被膜のダメージ修復方法および該方法により修復された低誘電率シリカ系被膜 |
US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
KR20090064279A (ko) | 2007-12-14 | 2009-06-18 | 노벨러스 시스템즈, 인코포레이티드 | 손상 없는 갭 충진을 위한 보호 층 |
US7776740B2 (en) | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
JP4815464B2 (ja) | 2008-03-31 | 2011-11-16 | 株式会社日立製作所 | 微細構造転写スタンパ及び微細構造転写装置 |
KR101892467B1 (ko) | 2008-05-02 | 2018-08-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 회전하는 기판들에 대한 비 방사상 온도 제어를 위한 시스템 |
US7655532B1 (en) | 2008-07-25 | 2010-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI film property using SOD post-treatment |
JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US20100089315A1 (en) | 2008-09-22 | 2010-04-15 | Applied Materials, Inc. | Shutter disk for physical vapor deposition chamber |
US8153533B2 (en) | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
KR20100035000A (ko) | 2008-09-25 | 2010-04-02 | 삼성전자주식회사 | 서로 다른 종횡비를 갖는 소자 분리 트렌치 갭필 방법 및 그를 이용한 반도체 소자 |
US7891228B2 (en) | 2008-11-18 | 2011-02-22 | Mks Instruments, Inc. | Dual-mode mass flow verification and mass flow delivery system and method |
US8557712B1 (en) | 2008-12-15 | 2013-10-15 | Novellus Systems, Inc. | PECVD flowable dielectric gap fill |
KR20100082170A (ko) | 2009-01-08 | 2010-07-16 | 삼성전자주식회사 | 실리콘 산화막 패턴 및 소자 분리막 형성 방법 |
WO2010091205A2 (en) | 2009-02-04 | 2010-08-12 | Applied Materials, Inc. | Ground return for plasma processes |
KR101534678B1 (ko) | 2009-02-12 | 2015-07-08 | 삼성전자주식회사 | 텅스텐 콘택 플러그를 산소 분위기에서 rta 처리하고, rto 처리된 텅스텐 플러그를 수소 분위기에서 환원시키는 반도체 소자의 제조방법 |
JP2010205854A (ja) | 2009-03-02 | 2010-09-16 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
JP4564570B2 (ja) | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
JP4523661B1 (ja) | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
US8435830B2 (en) | 2009-03-18 | 2013-05-07 | Samsung Electronics Co., Ltd. | Methods of fabricating semiconductor devices |
FR2944147B1 (fr) | 2009-04-02 | 2011-09-23 | Saint Gobain | Procede de fabrication d'une structure a surface externe texturee pour dispositif a diode electroluminescente organique et struture a surface externe texturee |
US20100304027A1 (en) | 2009-05-27 | 2010-12-02 | Applied Materials, Inc. | Substrate processing system and methods thereof |
JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
KR20110000960A (ko) | 2009-06-29 | 2011-01-06 | 삼성전자주식회사 | 반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법 |
JP5568913B2 (ja) | 2009-07-24 | 2014-08-13 | 株式会社ユーテック | Pzt膜の製造方法及び水蒸気加熱装置 |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
JP2011066100A (ja) | 2009-09-16 | 2011-03-31 | Bridgestone Corp | 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法 |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
CN102598285B (zh) | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
SG182333A1 (en) | 2010-01-07 | 2012-08-30 | Applied Materials Inc | In-situ ozone cure for radical-component cvd |
KR101775608B1 (ko) | 2010-01-21 | 2017-09-19 | 파워다인, 인코포레이티드 | 탄소질 물질로부터의 스팀의 발생 방법 |
US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
JP2013521650A (ja) | 2010-03-05 | 2013-06-10 | アプライド マテリアルズ インコーポレイテッド | ラジカル成分cvdによる共形層 |
CN102214609A (zh) * | 2010-04-07 | 2011-10-12 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
KR101877377B1 (ko) | 2010-04-23 | 2018-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR101163711B1 (ko) | 2010-06-15 | 2012-07-09 | 서울대학교산학협력단 | 함몰된 바디에 두개의 게이트를 갖는 1t 디램 소자와 그 동작방법 및 제조방법 |
CN101871043B (zh) | 2010-06-25 | 2012-07-18 | 东莞市康汇聚线材科技有限公司 | 一种退火炉蒸汽发生器及其控制方法 |
JP2012049446A (ja) | 2010-08-30 | 2012-03-08 | Toshiba Corp | 超臨界乾燥方法及び超臨界乾燥システム |
EP2426720A1 (en) | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
TW201216331A (en) | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
JP5806827B2 (ja) | 2011-03-18 | 2015-11-10 | 東京エレクトロン株式会社 | ゲートバルブ装置及び基板処理装置並びにその基板処理方法 |
JP5450494B2 (ja) | 2011-03-25 | 2014-03-26 | 株式会社東芝 | 半導体基板の超臨界乾燥方法 |
CN103502853A (zh) | 2011-03-25 | 2014-01-08 | 李谞荣 | 光波电路及其制造方法 |
US20120252210A1 (en) | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Method for modifying metal cap layers in semiconductor devices |
WO2012133583A1 (ja) | 2011-03-30 | 2012-10-04 | 大日本印刷株式会社 | 超臨界乾燥装置及び超臨界乾燥方法 |
US9299581B2 (en) | 2011-05-12 | 2016-03-29 | Applied Materials, Inc. | Methods of dry stripping boron-carbon films |
JP6085423B2 (ja) | 2011-05-30 | 2017-02-22 | 株式会社東芝 | 基板処理方法、基板処理装置および記憶媒体 |
WO2012165377A1 (ja) | 2011-05-30 | 2012-12-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
GB201110117D0 (en) | 2011-06-16 | 2011-07-27 | Fujifilm Mfg Europe Bv | method and device for manufacturing a barrie layer on a flexible substrate |
JP6042427B2 (ja) | 2011-06-28 | 2016-12-14 | ディーエムエス ダイナミック マイクロシステムズ セミコンダクター イクイップメント ゲーエムベーハーDMS Dynamic Micro Systems Semiconductor Equipment GmbH | 半導体ストッカシステム及び半導体ストック方法 |
WO2013008982A1 (ko) | 2011-07-14 | 2013-01-17 | 엘티씨 (주) | 높은 광추출 성능을 갖는 무기 산란막 {inorganic scattering films having high light extraction performance} |
JPWO2013065771A1 (ja) | 2011-11-01 | 2015-04-02 | 株式会社日立国際電気 | 半導体装置の製造方法、半導体装置の製造装置及び記録媒体 |
JP5712902B2 (ja) | 2011-11-10 | 2015-05-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
KR101305904B1 (ko) | 2011-12-07 | 2013-09-09 | 주식회사 테스 | 반도체소자 제조방법 |
EP2788161A4 (en) | 2011-12-08 | 2015-07-15 | Inmold Biosystems As | POLISHING ROUGH SUBSTRATES ASSISTED BY GLASS DEPOSITED BY CENTRIFUGATION |
JP2013122493A (ja) | 2011-12-09 | 2013-06-20 | Furukawa Electric Co Ltd:The | 光分岐素子および光分岐回路 |
JP2013154315A (ja) | 2012-01-31 | 2013-08-15 | Ricoh Co Ltd | 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置 |
CN104106128B (zh) | 2012-02-13 | 2016-11-09 | 应用材料公司 | 用于基板的选择性氧化的方法和设备 |
US8871656B2 (en) | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
US20130337171A1 (en) | 2012-06-13 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | N2 purged o-ring for chamber in chamber ald system |
KR101224520B1 (ko) | 2012-06-27 | 2013-01-22 | (주)이노시티 | 프로세스 챔버 |
KR20140003776A (ko) | 2012-06-28 | 2014-01-10 | 주식회사 메카로닉스 | 고 저항 산화아연 박막의 제조방법 |
WO2014011954A1 (en) | 2012-07-13 | 2014-01-16 | Northwestern University | Multifunctional graphene coated scanning tips |
JP2014019912A (ja) | 2012-07-19 | 2014-02-03 | Tokyo Electron Ltd | タングステン膜の成膜方法 |
KR101750633B1 (ko) | 2012-07-30 | 2017-06-23 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
US8846448B2 (en) | 2012-08-10 | 2014-09-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Warpage control in a package-on-package structure |
KR101680152B1 (ko) | 2012-08-24 | 2016-11-28 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | 게르마늄 층 상에 질화 산화 알루미늄 막을 구비하는 반도체 구조 및 그 제조방법 |
JP2014060256A (ja) | 2012-09-18 | 2014-04-03 | Tokyo Electron Ltd | 処理システム |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
US20150322286A1 (en) | 2012-11-27 | 2015-11-12 | The Regents Of The University Of California | Polymerized Metal-Organic Material for Printable Photonic Devices |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
JP2014141739A (ja) | 2012-12-27 | 2014-08-07 | Tokyo Electron Ltd | 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス |
US20140216498A1 (en) | 2013-02-06 | 2014-08-07 | Kwangduk Douglas Lee | Methods of dry stripping boron-carbon films |
SG11201505371UA (en) | 2013-02-19 | 2015-09-29 | Applied Materials Inc | Hdd patterning using flowable cvd film |
KR101443792B1 (ko) | 2013-02-20 | 2014-09-26 | 국제엘렉트릭코리아 주식회사 | 건식 기상 식각 장치 |
KR20140106977A (ko) | 2013-02-27 | 2014-09-04 | 삼성전자주식회사 | 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법 |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
US9680095B2 (en) | 2013-03-13 | 2017-06-13 | Macronix International Co., Ltd. | Resistive RAM and fabrication method |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
TWI614102B (zh) | 2013-03-15 | 2018-02-11 | 應用材料股份有限公司 | 基板沉積系統、機械手臂運輸設備及用於電子裝置製造之方法 |
US9378994B2 (en) | 2013-03-15 | 2016-06-28 | Applied Materials, Inc. | Multi-position batch load lock apparatus and systems and methods including same |
US10224258B2 (en) | 2013-03-22 | 2019-03-05 | Applied Materials, Inc. | Method of curing thermoplastics with microwave energy |
US9538586B2 (en) | 2013-04-26 | 2017-01-03 | Applied Materials, Inc. | Method and apparatus for microwave treatment of dielectric films |
KR101287035B1 (ko) | 2013-05-07 | 2013-07-17 | 호용종합건설주식회사 | 관 갱생 건증기 공급용 보일러 시스템 |
WO2014192871A1 (ja) | 2013-05-31 | 2014-12-04 | 株式会社日立国際電気 | 基板処理装置、半導体製造装置の製造方法及び炉口蓋体 |
JP6196481B2 (ja) | 2013-06-24 | 2017-09-13 | 株式会社荏原製作所 | 排ガス処理装置 |
KR101542803B1 (ko) | 2013-07-09 | 2015-08-07 | 주식회사 네오세미텍 | 고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법 |
US9178103B2 (en) | 2013-08-09 | 2015-11-03 | Tsmc Solar Ltd. | Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities |
KR102291990B1 (ko) | 2013-08-16 | 2021-08-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 텅스텐 육플루오르화물(wf6) 에치백을 이용하여 텅스텐 막을 증착하기 위한 방법 |
SG10201804322UA (en) | 2013-08-21 | 2018-07-30 | Applied Materials Inc | Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications |
JP6226648B2 (ja) | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
US9396986B2 (en) | 2013-10-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanism of forming a trench structure |
JP6129712B2 (ja) | 2013-10-24 | 2017-05-17 | 信越化学工業株式会社 | 過熱水蒸気処理装置 |
US9406547B2 (en) | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for trench isolation using flowable dielectric materials |
CN103745978B (zh) | 2014-01-03 | 2016-08-17 | 京东方科技集团股份有限公司 | 显示装置、阵列基板及其制作方法 |
US9257527B2 (en) | 2014-02-14 | 2016-02-09 | International Business Machines Corporation | Nanowire transistor structures with merged source/drain regions using auxiliary pillars |
US9818603B2 (en) | 2014-03-06 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
KR101571715B1 (ko) | 2014-04-23 | 2015-11-25 | 주식회사 풍산 | 고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법 |
CN104047676A (zh) | 2014-06-14 | 2014-09-17 | 马根昌 | 改良式对冲消声器 |
CN106463358B (zh) | 2014-06-16 | 2020-04-24 | 英特尔公司 | 金属互连件的接缝愈合 |
CN104089491B (zh) | 2014-07-03 | 2015-11-04 | 肇庆宏旺金属实业有限公司 | 退火炉的余热回收利用系统 |
CN105244269B (zh) * | 2014-07-09 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
US9257314B1 (en) | 2014-07-31 | 2016-02-09 | Poongsan Corporation | Methods and apparatuses for deuterium recovery |
DE112014006932T5 (de) | 2014-09-08 | 2017-06-01 | Mitsubishi Electric Corporation | Halbleitertempervorrichtung |
US9773865B2 (en) | 2014-09-22 | 2017-09-26 | International Business Machines Corporation | Self-forming spacers using oxidation |
US9362107B2 (en) | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
US20160118391A1 (en) | 2014-10-22 | 2016-04-28 | SanDisk Technologies, Inc. | Deuterium anneal of semiconductor channels in a three-dimensional memory structure |
SG11201703195QA (en) | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
US9543141B2 (en) | 2014-12-09 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for curing flowable layer |
US9777378B2 (en) | 2015-01-07 | 2017-10-03 | Applied Materials, Inc. | Advanced process flow for high quality FCVD films |
TW201639063A (zh) | 2015-01-22 | 2016-11-01 | 應用材料股份有限公司 | 批量加熱和冷卻腔室或負載鎖定裝置 |
EP3254303B1 (en) | 2015-02-06 | 2018-12-05 | Versum Materials US, LLC | Method for formation of carbon doped silicon containing films |
WO2016130956A1 (en) | 2015-02-13 | 2016-08-18 | Alexander Otto | Multifilament superconducting wire with high resistance sleeves |
WO2016172003A1 (en) | 2015-04-20 | 2016-10-27 | Applied Materials, Inc. | Buffer chamber wafer heating mechanism and supporting robot |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US10443934B2 (en) | 2015-05-08 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Substrate handling and heating system |
US9685303B2 (en) | 2015-05-08 | 2017-06-20 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for heating and processing a substrate |
US9401397B1 (en) | 2015-05-11 | 2016-07-26 | International Business Machines Corporation | Reduction of defect induced leakage in III-V semiconductor devices |
KR101681190B1 (ko) | 2015-05-15 | 2016-12-02 | 세메스 주식회사 | 기판 건조 장치 및 방법 |
WO2016191621A1 (en) | 2015-05-27 | 2016-12-01 | Applied Materials, Inc. | Methods and apparatus for a microwave batch curing process |
JP6802191B2 (ja) | 2015-06-05 | 2020-12-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | サセプタの位置付け及び回転装置、並びに使用の方法 |
US9728430B2 (en) | 2015-06-29 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic chuck with LED heating |
US20160379854A1 (en) | 2015-06-29 | 2016-12-29 | Varian Semiconductor Equipment Associates, Inc. | Vacuum Compatible LED Substrate Heater |
US10170608B2 (en) * | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
US9646850B2 (en) | 2015-07-06 | 2017-05-09 | Globalfoundries Inc. | High-pressure anneal |
US9484406B1 (en) | 2015-09-03 | 2016-11-01 | Applied Materials, Inc. | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
US9716142B2 (en) | 2015-10-12 | 2017-07-25 | International Business Machines Corporation | Stacked nanowires |
US9754840B2 (en) | 2015-11-16 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Horizontal gate-all-around device having wrapped-around source and drain |
KR102476764B1 (ko) * | 2015-12-23 | 2022-12-14 | 에스케이하이닉스 주식회사 | 소자분리구조 및 그 제조 방법 |
US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
KR102577628B1 (ko) | 2016-01-05 | 2023-09-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 수평 게이트 올 어라운드 디바이스들을 위한 나노와이어들을 제조하기 위한 방법 |
US9570551B1 (en) | 2016-02-05 | 2017-02-14 | International Business Machines Corporation | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth |
JP6240695B2 (ja) | 2016-03-02 | 2017-11-29 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
TWI680535B (zh) | 2016-06-14 | 2019-12-21 | 美商應用材料股份有限公司 | 金屬及含金屬化合物之氧化體積膨脹 |
US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
US9876019B1 (en) | 2016-07-13 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with programmable memory and methods for producing the same |
US20180087418A1 (en) | 2016-09-22 | 2018-03-29 | Castrol Limited | Fluid Method and System |
EP3520136A4 (en) | 2016-09-30 | 2020-05-06 | Applied Materials, Inc. | METHODS OF FORMING SELF-ALIGNED INTERCONNECT HOLES |
US10249525B2 (en) | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
WO2018183287A1 (en) | 2017-03-31 | 2018-10-04 | Applied Materials, Inc. | Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film |
WO2018194807A1 (en) | 2017-04-21 | 2018-10-25 | Applied Materials, Inc. | Improved electrode assembly |
KR20190137935A (ko) | 2017-05-01 | 2019-12-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 격리 및 사전-프로세싱 환경을 갖는 고압 어닐링 챔버 |
WO2018204651A1 (en) | 2017-05-03 | 2018-11-08 | Applied Materials, Inc. | Integrated substrate temperature measurement on high temperature ceramic heater |
JP6918146B2 (ja) | 2017-05-19 | 2021-08-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 液体および固体の排出物を収集して後に反応させて気体の排出物にする装置 |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
KR102574914B1 (ko) | 2017-06-02 | 2023-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 보론 카바이드 하드마스크의 건식 스트리핑 |
CN110637353A (zh) | 2017-06-02 | 2019-12-31 | 应用材料公司 | 在衬底上沉积的膜的质量改进 |
US10269571B2 (en) | 2017-07-12 | 2019-04-23 | Applied Materials, Inc. | Methods for fabricating nanowire for semiconductor applications |
US10234630B2 (en) | 2017-07-12 | 2019-03-19 | Applied Materials, Inc. | Method for creating a high refractive index wave guide |
US10179941B1 (en) | 2017-07-14 | 2019-01-15 | Applied Materials, Inc. | Gas delivery system for high pressure processing chamber |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
US10096516B1 (en) | 2017-08-18 | 2018-10-09 | Applied Materials, Inc. | Method of forming a barrier layer for through via applications |
KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
CN111357090B (zh) | 2017-11-11 | 2024-01-05 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
JP7330181B2 (ja) | 2017-11-16 | 2023-08-21 | アプライド マテリアルズ インコーポレイテッド | 高圧蒸気アニール処理装置 |
KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
CN111699549A (zh) | 2018-01-24 | 2020-09-22 | 应用材料公司 | 使用高压退火的接缝弥合 |
JP7379353B2 (ja) | 2018-02-22 | 2023-11-14 | アプライド マテリアルズ インコーポレイテッド | より優れた膜品質を可能にするためにマスク基板を処理する方法 |
US11114333B2 (en) | 2018-02-22 | 2021-09-07 | Micromaterials, LLC | Method for depositing and reflow of a high quality etch resistant gapfill dielectric film |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
WO2019204124A1 (en) | 2018-04-20 | 2019-10-24 | Applied Materials, Inc. | Ceramic wafer heater with integrated pressurized helium cooling |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US11434569B2 (en) | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
US11499666B2 (en) | 2018-05-25 | 2022-11-15 | Applied Materials, Inc. | Precision dynamic leveling mechanism with long motion capability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US10790183B2 (en) | 2018-06-05 | 2020-09-29 | Applied Materials, Inc. | Selective oxidation for 3D device isolation |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US20200035513A1 (en) | 2018-07-25 | 2020-01-30 | Applied Materials, Inc. | Processing apparatus |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
WO2020092002A1 (en) | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
-
2018
- 2018-09-11 JP JP2020514961A patent/JP7274461B2/ja active Active
- 2018-09-11 WO PCT/US2018/050464 patent/WO2019055415A1/en active Application Filing
- 2018-09-11 US US16/644,150 patent/US11177128B2/en active Active
- 2018-09-11 SG SG11202001450UA patent/SG11202001450UA/en unknown
- 2018-09-11 KR KR1020207010217A patent/KR102659317B1/ko active IP Right Grant
- 2018-09-11 CN CN201880058936.6A patent/CN111095524B/zh active Active
- 2018-09-12 TW TW107132041A patent/TWI697050B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188182A (ja) | 2001-12-17 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
JP2005347636A (ja) | 2004-06-04 | 2005-12-15 | Az Electronic Materials Kk | トレンチ・アイソレーション構造の形成方法 |
JP2013517616A (ja) | 2010-01-06 | 2013-05-16 | アプライド マテリアルズ インコーポレイテッド | 酸化物ライナを使用する流動可能な誘電体 |
JP2013533639A (ja) | 2010-07-30 | 2013-08-22 | アプライド マテリアルズ インコーポレイテッド | 流動性cvdによる間隙充填用の酸化物を多く含むライナ層 |
JP2012231007A (ja) | 2011-04-26 | 2012-11-22 | Elpida Memory Inc | 半導体装置の製造方法 |
US20160336405A1 (en) | 2015-05-11 | 2016-11-17 | Applied Materials, Inc. | Horizontal gate all around and finfet device isolation |
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JP2020533803A (ja) | 2020-11-19 |
US20200388486A1 (en) | 2020-12-10 |
WO2019055415A1 (en) | 2019-03-21 |
US11177128B2 (en) | 2021-11-16 |
CN111095524A (zh) | 2020-05-01 |
TW201923901A (zh) | 2019-06-16 |
KR102659317B1 (ko) | 2024-04-18 |
TWI697050B (zh) | 2020-06-21 |
KR20200042009A (ko) | 2020-04-22 |
SG11202001450UA (en) | 2020-03-30 |
CN111095524B (zh) | 2023-10-03 |
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