CN111699549A - 使用高压退火的接缝弥合 - Google Patents

使用高压退火的接缝弥合 Download PDF

Info

Publication number
CN111699549A
CN111699549A CN201980012399.6A CN201980012399A CN111699549A CN 111699549 A CN111699549 A CN 111699549A CN 201980012399 A CN201980012399 A CN 201980012399A CN 111699549 A CN111699549 A CN 111699549A
Authority
CN
China
Prior art keywords
substrate
conformal layer
features
high pressure
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980012399.6A
Other languages
English (en)
Inventor
陈一宏
程睿
P·曼纳
A·B·玛里克
江施施
巫勇
K·莱斯彻基什
S·冈迪科塔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN111699549A publication Critical patent/CN111699549A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

本公开的各方面包括处理基板的方法。所述方法包括将共形层沉积在包含接缝的基板上。在存在氧化剂时使用高压退火来处理所述基板。

Description

使用高压退火的接缝弥合
技术领域
本公开的实施例总体上涉及集成电路制造方法，并且具体来说，涉及校正半导体器件中的接缝缺陷。
背景技术
半导体器件的小型化持续需要增加形成器件的材料层的几何形状和布置的复杂性。其中，用材料适当地填充在半导体器件上形成的特征(诸如沟槽和过孔)由于特征的尺寸缩小而日益困难。
通常通过沉积工艺来填充特征，所述沉积工艺诸如化学气相沉积(CVD)、物理气相沉积(PVD)、或电镀工艺之类，所述沉积工艺可以导致不是最优的特征填充。问题由特征上表面处的材料的累积产生。在完全且均匀地填充特征之前，在特征边缘处的这种材料的累积可以阻挡或以其他方式阻碍特征，从而导致在特征内形成空隙、接缝、以及不均匀结构。在较小几何形状的器件中使用的较小特征(诸如在数十纳米范围中的沟槽之类)必然具有与较大几何形状的器件相比较大的深宽比(即，特征高度与宽度的关系)，由此加剧了上文描述的沟槽和过孔填充的困难。
常规方法利用多个循环的沉积和退火来尝试修复特征中的接缝和空腔。然而，这些常规方法导致极慢的处理时间。另外，这些方法可以破坏半导体器件的材料，并且导致在半导体器件的操作中的可靠性问题。
由此，需要改进的校正接缝缺陷的方法。
发明内容
在一个实施例中，提供了一种处理基板的方法，包括：将具有多个基板特征的基板定位在处理腔室中、将共形层沉积在基板特征上，以及用高压退火处理基板。当沉积共形层时，在相邻的基板特征之间形成接缝。在存在氧化剂时执行高压退火。通过高压退火来减小共形层内的接缝的体积。
在另一实施例中，提供了一种处理基板的方法，包括：将具有多个基板特征的基板定位在处理腔室中、将共形层沉积在基板特征上，以及用高压退火处理基板。共形层的结构是结晶的。当沉积共形层时，在相邻的基板特征之间形成接缝。在存在氧化剂时执行高压退火。通过高压退火来减小共形层内的接缝的体积。
在另一实施例中，提供了一种处理基板的方法，包括：将具有多个基板特征的基板定位在处理腔室中、将共形层沉积在基板特征上，以及用高压退火处理基板。共形层的结构是结晶的。当沉积共形层时，在相邻的基板特征之间形成接缝。在存在氧化剂时执行高压退火。通过高压退火来减小共形层内的接缝的体积。共形层的体积在高压退火期间膨胀。
高压退火有助于减小位于共形膜之间的接缝的尺寸，其中共形膜被设置在半导体的相邻特征上。接缝尺寸的减小增加了共形膜的电绝缘性质。
附图说明
为了以能够详细理解本公开的上述特征的方式，可以通过参考实施例来获得对上文所简要概述的本公开内容的更具体的描述，这些实施例中的一些在附图中被示出。然而，应注意，附图仅示出示例性实施例并且由此不被认为是对范围的限制，因为本公开可以允许其他等效的实施例。
图1是根据本公开内容的一个实施例的处理基板的方法的流程图。
图2A是在图1的方法的一个操作时的基板的截面图。
图2B是在图1的方法的一个操作时的基板的截面图。
图2C是在图1的方法的一个操作时的基板的截面图。
图2D是在图1的方法的一个操作时的基板的截面图。
图3是示例性退火腔室的截面图。
为了便于理解，在可能的情况下，已经使用相同附图标记来表示图中共用的相同元件。可以预期一个实施例的元件和特征可有利地结合在其他实施例中而无需进一步叙述。
具体实施方式
本文提供的本公开的实施例包括处理基板以移除在基板上形成的互连中的缺陷(诸如接缝之类)的方法。在一些实施例中，所述方法包括在存在氧化剂时在加压环境中加热基板。沉积在基板上的共形层在体积上膨胀，使得在接缝的相对侧面上的共形层彼此化学交联，从而减少或消除接缝。本公开的实施例可证明有用于，但不限于减小基板特征上的接缝尺寸。
图1是根据本公开的一个实施例的用于处理基板210的方法100的流程图。图2A-图2D是在方法100的各阶段处的基板的示意性截面图。为了便于解释本公开的各方面，将结合图1对图2A-图2D进行解释。
方法100开始于操作102。在操作102中，将基板210定位在处理腔室中。例如，所述处理腔室是沉积腔室。基板210包括在其上形成的一个或多个基板特征212。此处，基板特征212是四个沟槽。基板210可以是光掩模、半导体晶片、或其他工件。根据一些实施例，基板210包括用于制造集成电路、被动微电子器件(例如，电容器、电感器)和主动微电子器件(例如，晶体管、光检测器、激光器、二极管)中的任一者的任何材料。基板210包括将此类主动和被动微电子器件(或其特征)与导电层或形成在基板上的层分开的绝缘或介电材料。在一个实施例中，基板210是包括一个或多个介电层(例如，二氧化硅、氮化硅、氧化铝、以及其他介电材料)的半导体基板。在一个实施例中，基板210包括一个或多个膜层。基板210的一个或多个层可以包括导电层、半导体层、绝缘层、或它们的任何组合。
在操作104处，共形层214在基板特征212中沉积。根据一个实施例，共形层214是含硅层，诸如二氧化硅层之类。根据一个实施例，共形层214是金属氧化物层，诸如氧化铝或氧化钒之类。共形层214通过沉积工艺形成。根据一些实施例，所述沉积工艺是化学气相沉积(CVD)或原子层沉积(ALD)。为了沉积共形层214，使第一前驱物流入处理腔室。前驱物可包括硅(Si)和氢(H)。根据一些实施例，前驱物包括硅烷前驱物、二硅烷前驱物、三硅烷前驱物、或四硅烷前驱物。第一前驱物与第二前驱物气体(诸如氧化剂之类，例如臭氧或氧自由基)反应，以在基板特征212内形成二氧化硅。所述沉积工艺在以下范围中的处理温度下发生，例如，所述范围在约摄氏150度与约摄氏700度之间、在约摄氏250度与约摄氏600度之间、在约摄氏300度与约摄氏550度之间，诸如在约摄氏350度与约摄氏500度之间之类。此外，在沉积期间，将腔室维持在减压下。例如，腔室中的压力可在约5托(Torr)与约700托之间、在约10托与约600托之间，诸如在约15托与约500托之间之类。
如图2B所示，所沉积的共形层214被沉积在基板特征212中的基板210上。共形层214符合基板特征212的形状，由此在基板特征212内形成接缝216。应注意，为了清晰起见，夸大了接缝216的尺寸。在一些方面，在限定基板特征212的相邻结构上形成的共形层214可沉积到足以接触在相应基板特征212的相对表面上的共形层214的厚度。换句话说，接缝216不一定需要包括物理空隙，相反，接缝216可由于共形层214的部分240、250彼此接触而例如在基板特征212内形成。接缝216的存在通过降低基板特征212的电绝缘性质来负面地影响基板特征212内的间隙填充的性能。
在操作106处，将基板210传递到退火腔室，基板210上具有共形层214。在操作108处，用高压退火处理基板210。在存在氧化剂220(诸如蒸汽或蒸汽/氧气混合物之类)时，对基板210执行高压退火。基板210在退火温度下退火。所述退火温度为约摄氏100度到约摄氏600度，诸如约摄氏150度到约摄氏550度、或约摄氏200度到约摄氏500度之类。
将在退火腔室内的压力升至预定压力，以便执行高压退火。所述预定压力在约1巴(bar)与约90巴之间，诸如约1巴到约80巴、或约1巴到约70巴之类。增加的压力迫使退火腔室的环境内的氧化剂220下降到共形层214的接缝中。用高压退火处理基板210达期望的浸泡时间。浸泡时间通常为约3分钟到约150分钟，诸如约5分钟到约120分钟之类。
在高压退火期间，通过高压将氧化剂220运送到接缝216中。在图2C中，沉积在基板特征212内的共形层214暴露于氧化剂220。箭头示出了氧化剂220到接缝216中的流动。在退火工艺期间，共形层214由于暴露于氧化剂220而氧化。由于氧化，共形层214经历体积膨胀。也就是说，共形层214的体积增加，诸如增加到以虚线示出的经膨胀的体积218。图2C所示的经膨胀的体积218表示在高压退火期间经历体积膨胀的共形层214。
如图2D所示的，由于高压退火的氧化工艺，共形层214被转换为基本上没有接缝216的致密氧化物。在共形层214在高压退火期间膨胀时，不接触的共形层214的部分(诸如跨接缝216相对的共形层214的部分240、250)膨胀，直到所述部分彼此相互作用。在接缝边界处的氧化促进部分240、250之间的反应，使得氧化剂220的原子与每个部分240、250反应和/或交联。部分240、250跨接缝216的反应和/或交联导致形成一体结构并移除接缝。在共形层214的结构是结晶的示例中，氧化剂220导致部分240、250的晶体结构的接合，由此消除接缝216。
除了弥合共形层214中的接缝之外，操作208的高压退火经由包括附加的氧化物使共形层214致密化，从而进一步改进共形层214的电绝缘性质。
图1示出了处理基板210的一个实施例。然而，还设想了附加的实施例。在另一方面，操作104和108可在没有操作106的情况下在相同腔室中发生。在另一方面，操作104可包括多个沉积步骤或循环以形成共形层214。
此外，构想了共形层214是除了二氧化硅之外的层，诸如硅、锗、金属层、金属氧化物层、或它们的组合之类。在此类实施例中，用于形成共形层214的金属包括铝、钛、钒、铬、锰、铁、钴、镍、铜、钇、锆、铪、钼、和它们的合金等等。所述金属也可彼此结合使用。
在其他实施例中，构想了可将除了CVD之外的沉积工艺用于将材料沉积在基板特征212中。例如，根据要沉积在基板特征212中的各种材料，可利用原子层沉积(ALD)、等离子体增强、ALD、等离子体增强CVD、物理气相沉积(PVD)、电镀、或其他沉积方法。
此外，虽然图2A-图2D示出的基板210具有在其上的沟槽，但是构想了除了沟槽之外的基板特征212可获益于本公开的各方面。
图3是可用本文描述的方法实践的示例性处理腔室的示意性截面图。批处理腔室300具有设置在内部体积350中的用于处理多个基板335的盒330。批处理腔室300具有封闭内部体积350的腔室主体310、和设置在腔室主体310上的盖311。一个或多个筒式加热器312被设置在腔室主体310内。加热器312(诸如电阻式加热器之类)配置成加热腔室主体310。通过控制器380来控制对加热器312的供电。壳体320设置在内部体积350内。绝缘衬垫316设置在围绕壳体320的内部体积150中。绝缘衬垫316防止在腔室主体310与壳体320之间的热传递。
盒330耦合到轴374，轴374延伸穿过腔室主体110中的开口354。通过耦合到轴374的致动器370将盒330可移动地设置在内部体积350内。盒130有助于在载入位置与处理位置之间传递基板335。穿过形成在腔室主体310中的载入端口395将基板335传递到内部体积350中和从内部体积350中传递出基板335。当盒330处于处理位置时，壳体320耦合到盒330的盖340，并且壳体320限定处理区域，在所述处理区域中，基板335在升高的压力和升高的温度下退火。
在处理期间，处理流体(诸如氧化剂220之类)穿过入口端口352流入处理区域。入口端口352通过盒330中的多个孔333与基板335流体连通。设置在处理区域内的辅助加热器327配置成加热处理体积和处理体积中的基板335。升高处理区域内的压力和温度，以便对其中的基板335退火。处理流体通过出口端口356从处理区域排出。
控制器380耦合到多个传感器314，诸如温度传感器或压力传感器之类。传感器314向控制器380提供信号以指示内部体积350内的状况。控制器380控制处理流体的流动以及供应到加热器312和辅助加热器327的电力，从而以期望的方式处理基板335。以这种方式，控制器380配置成控制处理腔室300的各方面以执行如本文所公开的操作。
在本文公开的操作的一个示例中，将包含一个或多个基板特征212的基板210定位在处理腔室中。在基板210的基板特征212上沉积共形层214。将基板210传递到退火腔室。在基板210上执行高压退火，并且共形层214的体积膨胀，使得相邻共形层彼此接触和/或彼此化学反应。
本文描述的方法产生基本上没有接缝或空隙的高质量氧化层。以跨整个层基本均匀的方式氧化所述层，由此增加氧在整个层上的分布的均匀性。此外，通过本文描述的方法增加氧化层的致密化的均匀性。均匀致密化还导致改进的蚀刻选择性。
虽然前述内容针对本公开的实施例，但是在不脱离本公开的基本范围的情况下，可设计出本公开的其他和进一步实施例，并且本公开的范围由所附权利要求书确定。

Claims (15)

1.一种处理基板的方法，包括：
将所述基板定位在处理腔室中，所述基板具有多个基板特征；
在所述基板特征上沉积共形层，使得在相邻基板特征之间形成接缝；以及
在存在氧化剂时，用在约1巴到约70巴的压力下执行的高压退火来处理所述基板，使得在所述共形层内的所述接缝的体积减小。
2.如权利要求1所述的方法，其特征在于，所述氧化剂包括蒸汽。
3.如权利要求1所述的方法，其特征在于，所述共形层包括硅层、金属层、金属氧化物层、或它们的组合。
4.如权利要求1所述的方法，其特征在于，所述多个基板特征包括沟槽。
5.如权利要求1所述的方法，其特征在于，所述在所述多个基板特征上沉积共形层包括化学气相沉积。
6.如权利要求5所述的方法，其特征在于，所述沉积所述共形层包括使前驱物流入所述处理腔室，其中所述前驱物包括硅和氢。
7.如权利要求1所述的方法，其特征在于，所述共形层的体积在所述高压退火期间膨胀。
8.一种处理基板的方法，包括：
将所述基板定位在处理腔室中，所述基板具有多个基板特征；
在所述基板特征上沉积共形层，使得在相邻基板特征之间形成接缝，其中所述共形层的结构是结晶的；以及
在存在氧化剂时用高压退火处理所述基板，使得在所述共形层内的所述接缝的体积减小。
9.如权利要求8所述的方法，其特征在于，所述处理所述基板导致设置在所述基板特征上的共形层与设置在所述相邻基板特征上的共形层化学反应。
10.如权利要求8所述的方法，其特征在于，执行所述高压退火达约5分钟到约120分钟的时间，并且其中在约1巴到约70巴的压力下执行所述高压退火。
11.如权利要求8所述的方法，其特征在于，所述共形层包括硅层、金属层、金属次氧化物层、或它们的组合。
12.如权利要求8所述的方法，其特征在于，所述多个基板特征包括沟槽。
13.如权利要求8所述的方法，其特征在于，所述在所述多个基板特征上沉积共形层包括化学气相沉积。
14.如权利要求13所述的方法，其特征在于，所述沉积所述共形层包括使前驱物流入所述处理腔室，其中所述前驱物包括硅和氢。
15.一种处理基板的方法，包括：
将所述基板定位在处理腔室中，所述基板具有多个基板特征；
在所述基板特征上沉积共形层，使得在相邻基板特征之间形成接缝，其中所述共形层的结构是结晶的；以及
在存在氧化剂时，用在约1巴到约70巴的压力下执行的高压退火来处理所述基板，使得在所述共形层内的所述接缝的体积减小，其中所述共形层的体积在所述高压退火期间膨胀。
CN201980012399.6A 2018-01-24 2019-01-03 使用高压退火的接缝弥合 Pending CN111699549A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862621423P 2018-01-24 2018-01-24
US62/621,423 2018-01-24
PCT/US2019/012161 WO2019147400A1 (en) 2018-01-24 2019-01-03 Seam healing using high pressure anneal

Publications (1)

Publication Number Publication Date
CN111699549A true CN111699549A (zh) 2020-09-22

Family

ID=67300123

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980012399.6A Pending CN111699549A (zh) 2018-01-24 2019-01-03 使用高压退火的接缝弥合

Country Status (6)

Country Link
US (1) US10636669B2 (zh)
JP (1) JP7299898B2 (zh)
KR (1) KR102649241B1 (zh)
CN (1) CN111699549A (zh)
SG (1) SG11202006867QA (zh)
WO (1) WO2019147400A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US11177128B2 (en) 2017-09-12 2021-11-16 Applied Materials, Inc. Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN117936420A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
JP2022507390A (ja) 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド 強化拡散プロセスを使用する膜の堆積
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
KR20230114190A (ko) * 2022-01-24 2023-08-01 주식회사 에이치피에스피 반도체 공정의 절연막 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030139012A1 (en) * 2002-01-21 2003-07-24 Shoichi Yamauchi Method for manufacturing semiconductor device with semiconductor region inserted into trench
US20030148631A1 (en) * 1999-11-08 2003-08-07 Taiwan Semiconductor Manufacturing Company Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
JP2005303276A (ja) * 2004-03-16 2005-10-27 Ishikawajima Harima Heavy Ind Co Ltd 半導体装置の製造方法
US20080160783A1 (en) * 2004-03-16 2008-07-03 Ishikawajima-Harima Heavy Industries Co., Ltd. Method For Manufacturing Semiconductor Device
US20090104789A1 (en) * 2007-10-22 2009-04-23 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill

Family Cites Families (217)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524587A (en) 1967-01-10 1985-06-25 Kantor Frederick W Rotary thermodynamic apparatus and method
JPH0748489B2 (ja) 1987-07-27 1995-05-24 富士通株式会社 プラズマ処理装置
US5114513A (en) 1988-10-27 1992-05-19 Omron Tateisi Electronics Co. Optical device and manufacturing method thereof
JP2730695B2 (ja) 1989-04-10 1998-03-25 忠弘 大見 タングステン膜の成膜装置
US5175123A (en) * 1990-11-13 1992-12-29 Motorola, Inc. High-pressure polysilicon encapsulated localized oxidation of silicon
JP2998996B2 (ja) * 1990-12-05 2000-01-17 宮崎沖電気株式会社 半導体素子の製造方法
US5050540A (en) 1991-01-29 1991-09-24 Arne Lindberg Method of gas blanketing a boiler
JPH0567607A (ja) * 1991-03-20 1993-03-19 Mitsubishi Electric Corp 半導体装置の絶縁膜の平坦化方法
JPH05129296A (ja) * 1991-11-05 1993-05-25 Fujitsu Ltd 導電膜の平坦化方法
JP3158259B2 (ja) * 1992-01-29 2001-04-23 株式会社東芝 成膜方法
US5319212A (en) 1992-10-07 1994-06-07 Genus, Inc. Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors
US5607002A (en) 1993-04-28 1997-03-04 Advanced Delivery & Chemical Systems, Inc. Chemical refill system for high purity chemicals
US5880041A (en) 1994-05-27 1999-03-09 Motorola Inc. Method for forming a dielectric layer using high pressure
US5808245A (en) 1995-01-03 1998-09-15 Donaldson Company, Inc. Vertical mount catalytic converter muffler
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US5858051A (en) 1995-05-08 1999-01-12 Toshiba Machine Co., Ltd. Method of manufacturing optical waveguide
US5895274A (en) 1996-01-22 1999-04-20 Micron Technology, Inc. High-pressure anneal process for integrated circuits
KR980012044A (ko) 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6082950A (en) 1996-11-18 2000-07-04 Applied Materials, Inc. Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
US6136664A (en) * 1997-08-07 2000-10-24 International Business Machines Corporation Filling of high aspect ratio trench isolation
JP3225268B2 (ja) * 1997-09-18 2001-11-05 東京農工大学長 シリコン酸化物の改質方法
US5963817A (en) 1997-10-16 1999-10-05 International Business Machines Corporation Bulk and strained silicon on insulator using local selective oxidation
JP3199006B2 (ja) 1997-11-18 2001-08-13 日本電気株式会社 層間絶縁膜の形成方法および絶縁膜形成装置
US6442980B2 (en) 1997-11-26 2002-09-03 Chart Inc. Carbon dioxide dry cleaning system
US6846739B1 (en) 1998-02-27 2005-01-25 Micron Technology, Inc. MOCVD process using ozone as a reactant to deposit a metal oxide barrier layer
US6164412A (en) 1998-04-03 2000-12-26 Arvin Industries, Inc. Muffler
US6719516B2 (en) 1998-09-28 2004-04-13 Applied Materials, Inc. Single wafer load lock with internal wafer transport
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6612317B2 (en) 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
EP1077477B1 (en) 1999-08-17 2008-12-17 Applied Materials, Inc. Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing
US6299753B1 (en) 1999-09-01 2001-10-09 Applied Materials, Inc. Double pressure vessel chemical dispenser unit
JP2001110729A (ja) 1999-10-06 2001-04-20 Mitsubishi Heavy Ind Ltd 半導体素子の連続製造装置
US6500603B1 (en) 1999-11-11 2002-12-31 Mitsui Chemicals, Inc. Method for manufacturing polymer optical waveguide
US6150286A (en) 2000-01-03 2000-11-21 Advanced Micro Devices, Inc. Method of making an ultra thin silicon nitride film
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
JP2001250787A (ja) 2000-03-06 2001-09-14 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US20040025908A1 (en) 2000-04-18 2004-02-12 Stephen Douglas Supercritical fluid delivery system for semiconductor wafer processing
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6797336B2 (en) 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
JP4335469B2 (ja) 2001-03-22 2009-09-30 株式会社荏原製作所 真空排気装置のガス循環量調整方法及び装置
TW544797B (en) 2001-04-17 2003-08-01 Kobe Steel Ltd High-pressure processing apparatus
US7080651B2 (en) 2001-05-17 2006-07-25 Dainippon Screen Mfg. Co., Ltd. High pressure processing apparatus and method
EP1271636A1 (en) 2001-06-22 2003-01-02 Infineon Technologies AG Thermal oxidation process control by controlling oxidation agent partial pressure
JP2003051474A (ja) 2001-08-03 2003-02-21 Kobe Steel Ltd 高圧処理装置
US6781801B2 (en) 2001-08-10 2004-08-24 Seagate Technology Llc Tunneling magnetoresistive sensor with spin polarized current injection
US6619304B2 (en) 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US20030098069A1 (en) 2001-11-26 2003-05-29 Sund Wesley E. High purity fluid delivery system
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7521089B2 (en) 2002-06-13 2009-04-21 Tokyo Electron Limited Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US20070212850A1 (en) 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP2004127958A (ja) 2002-09-30 2004-04-22 Kyoshin Engineering:Kk 高圧アニール水蒸気処理を行なう装置及び方法
US20040060519A1 (en) 2002-10-01 2004-04-01 Seh America Inc. Quartz to quartz seal using expanded PTFE gasket material
US6889508B2 (en) 2002-10-02 2005-05-10 The Boc Group, Inc. High pressure CO2 purification and supply system
US20040112409A1 (en) 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
JP4895803B2 (ja) 2003-02-04 2012-03-14 アプライド マテリアルズ インコーポレイテッド 誘電体膜及びゲートスタックの形成方法並びに誘電体膜の処理方法
JP3956049B2 (ja) 2003-03-07 2007-08-08 東京エレクトロン株式会社 タングステン膜の形成方法
US6939794B2 (en) 2003-06-17 2005-09-06 Micron Technology, Inc. Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
WO2005007283A2 (en) 2003-07-08 2005-01-27 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
JP4173781B2 (ja) 2003-08-13 2008-10-29 株式会社神戸製鋼所 高圧処理方法
US7158221B2 (en) 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
US20050250347A1 (en) 2003-12-31 2005-11-10 Bailey Christopher M Method and apparatus for maintaining by-product volatility in deposition process
US7030468B2 (en) 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
JP4393268B2 (ja) 2004-05-20 2010-01-06 株式会社神戸製鋼所 微細構造体の乾燥方法
US20050269291A1 (en) 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US7491658B2 (en) 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
EP1824960A2 (en) 2004-11-22 2007-08-29 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
JP5531284B2 (ja) 2005-02-22 2014-06-25 エスピーティーエス テクノロジーズ リミテッド 副チャンバアセンブリを備えるエッチング用チャンバ
WO2006101315A1 (en) 2005-03-21 2006-09-28 Pkl Co., Ltd. Device and method for cleaning photomask
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20120060868A1 (en) 2005-06-07 2012-03-15 Donald Gray Microscale fluid delivery system
EP1959299B1 (en) 2005-06-10 2012-12-26 Obducat AB Pattern replication with intermediate stamp
JP4747693B2 (ja) 2005-06-28 2011-08-17 住友電気工業株式会社 樹脂体を形成する方法、光導波路のための構造を形成する方法、および光学部品を形成する方法
US7361231B2 (en) 2005-07-01 2008-04-22 Ekc Technology, Inc. System and method for mid-pressure dense phase gas and ultrasonic cleaning
JP5117856B2 (ja) 2005-08-05 2013-01-16 株式会社日立国際電気 基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
US7534080B2 (en) 2005-08-26 2009-05-19 Ascentool, Inc. Vacuum processing and transfer system
US8926731B2 (en) 2005-09-13 2015-01-06 Rasirc Methods and devices for producing high purity steam
KR100696178B1 (ko) 2005-09-13 2007-03-20 한국전자통신연구원 광 도파로 마스터 및 그 제조 방법
US8027089B2 (en) 2005-10-07 2011-09-27 Nikon Corporation Minute structure and its manufacturing method
US7387968B2 (en) 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US20070187386A1 (en) 2006-02-10 2007-08-16 Poongsan Microtec Corporation Methods and apparatuses for high pressure gas annealing
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
JP2007242791A (ja) 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc 基板処理装置
US8062408B2 (en) 2006-05-08 2011-11-22 The Board Of Trustees Of The University Of Illinois Integrated vacuum absorption steam cycle gas separation
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7650965B2 (en) 2006-06-09 2010-01-26 Emcon Technologies Llc Exhaust system
JP2008073611A (ja) 2006-09-21 2008-04-03 Dainippon Screen Mfg Co Ltd 高圧処理装置
US20080169183A1 (en) 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
JP2008192642A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US20080233404A1 (en) 2007-03-22 2008-09-25 3M Innovative Properties Company Microreplication tools and patterns using laser induced thermal embossing
JP5135856B2 (ja) 2007-03-31 2013-02-06 東京エレクトロン株式会社 トラップ装置、排気系及びこれを用いた処理システム
KR101442238B1 (ko) * 2007-07-26 2014-09-23 주식회사 풍산마이크로텍 고압 산소 열처리를 통한 반도체 소자의 제조방법
US7951728B2 (en) 2007-09-24 2011-05-31 Applied Materials, Inc. Method of improving oxide growth rate of selective oxidation processes
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
JP5211645B2 (ja) 2007-11-01 2013-06-12 大日本印刷株式会社 薄膜トランジスタ基板及びその製造方法
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
JP4815464B2 (ja) 2008-03-31 2011-11-16 株式会社日立製作所 微細構造転写スタンパ及び微細構造転写装置
US7655532B1 (en) 2008-07-25 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. STI film property using SOD post-treatment
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
US7891228B2 (en) 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
JP2010205854A (ja) 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US20100304027A1 (en) 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
JP4415062B1 (ja) 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR20110000960A (ko) 2009-06-29 2011-01-06 삼성전자주식회사 반도체 칩, 스택 모듈, 메모리 카드 및 그 제조 방법
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
JP2011066100A (ja) 2009-09-16 2011-03-31 Bridgestone Corp 光硬化性転写シート、及びこれを用いた凹凸パターンの形成方法
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
CN102754193A (zh) 2010-01-06 2012-10-24 应用材料公司 使用氧化物衬垫的可流动电介质
KR101837648B1 (ko) 2010-01-07 2018-04-19 어플라이드 머티어리얼스, 인코포레이티드 라디칼-컴포넌트 ｃｖｄ를 위한 인­시츄 오존 경화
EP2526339A4 (en) 2010-01-21 2015-03-11 Powerdyne Inc PRODUCTION OF STEAM FROM A CARBON SUBSTANCE
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
WO2011109148A2 (en) 2010-03-05 2011-09-09 Applied Materials, Inc. Conformal layers by radical-component cvd
CN101871043B (zh) 2010-06-25 2012-07-18 东莞市康汇聚线材科技有限公司 一种退火炉蒸汽发生器及其控制方法
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
JP2012049446A (ja) 2010-08-30 2012-03-08 Toshiba Corp 超臨界乾燥方法及び超臨界乾燥システム
EP2426720A1 (en) 2010-09-03 2012-03-07 Applied Materials, Inc. Staggered thin film transistor and method of forming the same
TW201216331A (en) 2010-10-05 2012-04-16 Applied Materials Inc Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
JP5806827B2 (ja) 2011-03-18 2015-11-10 東京エレクトロン株式会社 ゲートバルブ装置及び基板処理装置並びにその基板処理方法
US9031373B2 (en) 2011-03-25 2015-05-12 Seo Young Lee Lightwave circuit and method for manufacturing same
JP5450494B2 (ja) 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
WO2012133583A1 (ja) 2011-03-30 2012-10-04 大日本印刷株式会社 超臨界乾燥装置及び超臨界乾燥方法
US20120252210A1 (en) 2011-03-30 2012-10-04 Tokyo Electron Limited Method for modifying metal cap layers in semiconductor devices
US9299581B2 (en) 2011-05-12 2016-03-29 Applied Materials, Inc. Methods of dry stripping boron-carbon films
JP6085423B2 (ja) 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
GB201110117D0 (en) 2011-06-16 2011-07-27 Fujifilm Mfg Europe Bv method and device for manufacturing a barrie layer on a flexible substrate
JPWO2013065771A1 (ja) 2011-11-01 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、半導体装置の製造装置及び記録媒体
JP5712902B2 (ja) 2011-11-10 2015-05-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP2013122493A (ja) 2011-12-09 2013-06-20 Furukawa Electric Co Ltd:The 光分岐素子および光分岐回路
JP2013154315A (ja) 2012-01-31 2013-08-15 Ricoh Co Ltd 薄膜形成装置、薄膜形成方法、電気−機械変換素子、液体吐出ヘッド、およびインクジェット記録装置
US8993458B2 (en) 2012-02-13 2015-03-31 Applied Materials, Inc. Methods and apparatus for selective oxidation of a substrate
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
US20130337171A1 (en) 2012-06-13 2013-12-19 Qualcomm Mems Technologies, Inc. N2 purged o-ring for chamber in chamber ald system
KR101224520B1 (ko) 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
KR20140003776A (ko) 2012-06-28 2014-01-10 주식회사 메카로닉스 고 저항 산화아연 박막의 제조방법
WO2014011954A1 (en) 2012-07-13 2014-01-16 Northwestern University Multifunctional graphene coated scanning tips
JP2014019912A (ja) 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
US8846448B2 (en) 2012-08-10 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Warpage control in a package-on-package structure
WO2014030371A1 (ja) 2012-08-24 2014-02-27 独立行政法人科学技術振興機構 ゲルマニウム層上に窒化酸化アルミニウム膜を備える半導体構造およびその製造方法
KR102002782B1 (ko) 2012-09-10 2019-07-23 삼성전자주식회사 팽창성 부재를 사용하는 반도체 장치의 제조 방법
JP2014060256A (ja) 2012-09-18 2014-04-03 Tokyo Electron Ltd 処理システム
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
SG2013083241A (en) * 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
WO2014085511A2 (en) 2012-11-27 2014-06-05 The Regents Of The University Of California Polymerized metal-organic material for printable photonic devices
JP2014141739A (ja) 2012-12-27 2014-08-07 Tokyo Electron Ltd 金属マンガン膜の成膜方法、処理システム、電子デバイスの製造方法および電子デバイス
US20140216498A1 (en) 2013-02-06 2014-08-07 Kwangduk Douglas Lee Methods of dry stripping boron-carbon films
US8986557B2 (en) 2013-02-19 2015-03-24 Applied Materials, Inc. HDD patterning using flowable CVD film
KR101443792B1 (ko) 2013-02-20 2014-09-26 국제엘렉트릭코리아 주식회사 건식 기상 식각 장치
KR20140106977A (ko) 2013-02-27 2014-09-04 삼성전자주식회사 고성능 금속 산화물 반도체 박막 트랜지스터 및 그 제조방법
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9680095B2 (en) 2013-03-13 2017-06-13 Macronix International Co., Ltd. Resistive RAM and fabrication method
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US10224258B2 (en) 2013-03-22 2019-03-05 Applied Materials, Inc. Method of curing thermoplastics with microwave energy
US9414445B2 (en) 2013-04-26 2016-08-09 Applied Materials, Inc. Method and apparatus for microwave treatment of dielectric films
US20140329027A1 (en) * 2013-05-02 2014-11-06 Applied Materials, Inc. Low temperature flowable curing for stress accommodation
KR101801113B1 (ko) 2013-05-31 2017-11-24 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 제조 장치의 제조 방법 및 노구 개체
JP6196481B2 (ja) 2013-06-24 2017-09-13 株式会社荏原製作所 排ガス処理装置
KR101542803B1 (ko) 2013-07-09 2015-08-07 주식회사 네오세미텍 고온고압 송풍식 퍼지수단을 구비한 진공챔버 및 이를 이용한 세정방법
US9178103B2 (en) 2013-08-09 2015-11-03 Tsmc Solar Ltd. Apparatus and method for forming chalcogenide semiconductor absorber materials with sodium impurities
KR102291990B1 (ko) 2013-08-16 2021-08-19 어플라이드 머티어리얼스, 인코포레이티드 텅스텐 육플루오르화물(wf6) 에치백을 이용하여 텅스텐 막을 증착하기 위한 방법
SG10201804322UA (en) 2013-08-21 2018-07-30 Applied Materials Inc Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
JP6226648B2 (ja) 2013-09-04 2017-11-08 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
JP6129712B2 (ja) 2013-10-24 2017-05-17 信越化学工業株式会社 過熱水蒸気処理装置
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
CN103745978B (zh) 2014-01-03 2016-08-17 京东方科技集团股份有限公司 显示装置、阵列基板及其制作方法
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
US9818603B2 (en) 2014-03-06 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR101571715B1 (ko) 2014-04-23 2015-11-25 주식회사 풍산 고압 열처리를 이용한 스핀 온 글래스 절연막 형성방법
CN104047676A (zh) 2014-06-14 2014-09-17 马根昌 改良式对冲消声器
CN104089491B (zh) 2014-07-03 2015-11-04 肇庆宏旺金属实业有限公司 退火炉的余热回收利用系统
US9257314B1 (en) 2014-07-31 2016-02-09 Poongsan Corporation Methods and apparatuses for deuterium recovery
JPWO2016038664A1 (ja) 2014-09-08 2017-04-27 三菱電機株式会社 半導体アニール装置
US9773865B2 (en) * 2014-09-22 2017-09-26 International Business Machines Corporation Self-forming spacers using oxidation
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
US20160118391A1 (en) 2014-10-22 2016-04-28 SanDisk Technologies, Inc. Deuterium anneal of semiconductor channels in a three-dimensional memory structure
WO2016065219A1 (en) 2014-10-24 2016-04-28 Air Products And Chemicals, Inc. Compositions and methods using same for deposition of silicon-containing film
US9543141B2 (en) 2014-12-09 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd Method for curing flowable layer
JP6585724B2 (ja) 2015-02-06 2019-10-02 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
WO2016130956A1 (en) 2015-02-13 2016-08-18 Alexander Otto Multifilament superconducting wire with high resistance sleeves
KR101681190B1 (ko) 2015-05-15 2016-12-02 세메스 주식회사 기판 건조 장치 및 방법
WO2016191621A1 (en) 2015-05-27 2016-12-01 Applied Materials, Inc. Methods and apparatus for a microwave batch curing process
US9646850B2 (en) 2015-07-06 2017-05-09 Globalfoundries Inc. High-pressure anneal
US9484406B1 (en) 2015-09-03 2016-11-01 Applied Materials, Inc. Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US9716142B2 (en) 2015-10-12 2017-07-25 International Business Machines Corporation Stacked nanowires
US9754840B2 (en) 2015-11-16 2017-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Horizontal gate-all-around device having wrapped-around source and drain
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
WO2017120102A1 (en) 2016-01-05 2017-07-13 Applied Materials, Inc. Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US9570551B1 (en) 2016-02-05 2017-02-14 International Business Machines Corporation Replacement III-V or germanium nanowires by unilateral confined epitaxial growth
JP6240695B2 (ja) 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
TWI729457B (zh) 2016-06-14 2021-06-01 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
US9876019B1 (en) 2016-07-13 2018-01-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits with programmable memory and methods for producing the same
EP3520136A4 (en) 2016-09-30 2020-05-06 Applied Materials, Inc. METHODS OF FORMING SELF-ALIGNED INTERCONNECT HOLES
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
CN110637353A (zh) 2017-06-02 2019-12-31 应用材料公司 在衬底上沉积的膜的质量改进
US11114333B2 (en) * 2018-02-22 2021-09-07 Micromaterials, LLC Method for depositing and reflow of a high quality etch resistant gapfill dielectric film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030148631A1 (en) * 1999-11-08 2003-08-07 Taiwan Semiconductor Manufacturing Company Oxidative annealing method for forming etched spin-on-glass (SOG) planarizing layer with uniform etch profile
US20030139012A1 (en) * 2002-01-21 2003-07-24 Shoichi Yamauchi Method for manufacturing semiconductor device with semiconductor region inserted into trench
JP2005303276A (ja) * 2004-03-16 2005-10-27 Ishikawajima Harima Heavy Ind Co Ltd 半導体装置の製造方法
US20080160783A1 (en) * 2004-03-16 2008-07-03 Ishikawajima-Harima Heavy Industries Co., Ltd. Method For Manufacturing Semiconductor Device
US20090104789A1 (en) * 2007-10-22 2009-04-23 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill

Also Published As

Publication number Publication date
KR20200103850A (ko) 2020-09-02
US10636669B2 (en) 2020-04-28
KR102649241B1 (ko) 2024-03-18
WO2019147400A1 (en) 2019-08-01
JP2021511671A (ja) 2021-05-06
SG11202006867QA (en) 2020-08-28
US20190228982A1 (en) 2019-07-25
JP7299898B2 (ja) 2023-06-28

Similar Documents

Publication Publication Date Title
US10636669B2 (en) Seam healing using high pressure anneal
KR102386744B1 (ko) 작은 임계 치수의 피쳐에서 텅스텐 컨택 저항을 개선하는 방법
KR102627584B1 (ko) 기판 표면 내에 형성된 오목부를 충진하기 위한 주기적 증착 방법 및 장치
US9991138B2 (en) Etching method and etching apparatus
US9748105B2 (en) Tungsten deposition with tungsten hexafluoride (WF6) etchback
US7220461B2 (en) Method and apparatus for forming silicon oxide film
US10096516B1 (en) Method of forming a barrier layer for through via applications
KR100956705B1 (ko) 플라즈마 산화 처리 방법 및 반도체 장치의 제조 방법
KR100586020B1 (ko) 반도체 장치의 게이트 형성 방법
JP2017069313A (ja) 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP2022551922A (ja) 間隙充填堆積プロセス
TW201303999A (zh) 電漿處理方法及元件分離方法
JP3578155B2 (ja) 被処理体の酸化方法
US20200251340A1 (en) Methods and apparatus for filling a feature disposed in a substrate
JP6723128B2 (ja) ニッケル配線の製造方法
KR100889401B1 (ko) 성막 방법, 반도체 장치의 제조 방법, 반도체 장치,프로그램 및 기록매체
JP2022525460A (ja) 熱酸化品質が高い厚い酸化膜を低温で成長させる方法
JP6538604B2 (ja) 半導体装置の製造方法および基板処理装置
TWI737601B (zh) 回蝕輪廓調整的方法
US20070105397A1 (en) Method for removing hydrogen gas from a chamber
TW201903834A (zh) 自對準觸點與閘極處理流程
US20240014072A1 (en) Nitrogen plasma treatment for bottom-up growth
KR20240002965A (ko) 복합 배리어 층들
TW202407133A (zh) 整合的清潔及選擇性鉬沉積製程
JP2011187749A (ja) 半導体装置の製造方法及び基板処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination