JP6723128B2 - ニッケル配線の製造方法 - Google Patents
ニッケル配線の製造方法 Download PDFInfo
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- JP6723128B2 JP6723128B2 JP2016188146A JP2016188146A JP6723128B2 JP 6723128 B2 JP6723128 B2 JP 6723128B2 JP 2016188146 A JP2016188146 A JP 2016188146A JP 2016188146 A JP2016188146 A JP 2016188146A JP 6723128 B2 JP6723128 B2 JP 6723128B2
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- Prior art keywords
- film
- nickel
- gas
- annealing
- wiring
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims description 373
- 229910052759 nickel Inorganic materials 0.000 title claims description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000137 annealing Methods 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 48
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000011049 filling Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 150000002816 nickel compounds Chemical class 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 184
- 235000012431 wafers Nutrition 0.000 description 84
- 238000012546 transfer Methods 0.000 description 45
- 238000005229 chemical vapour deposition Methods 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 31
- 239000012298 atmosphere Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 238000005240 physical vapour deposition Methods 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 230000005587 bubbling Effects 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- YBMAWNCLJNNCMV-PAMPIZDHSA-L (z)-1,1,1,5,5,5-hexafluoro-4-oxopent-2-en-2-olate;nickel(2+) Chemical compound [Ni+2].FC(F)(F)C(/[O-])=C/C(=O)C(F)(F)F.FC(F)(F)C(/[O-])=C/C(=O)C(F)(F)F YBMAWNCLJNNCMV-PAMPIZDHSA-L 0.000 description 1
- VWHXTCKWIVCDGV-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC VWHXTCKWIVCDGV-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- IHRNDXJDUYVDRB-UHFFFAOYSA-N [Ni].Cc1cccc1.Cc1cccc1 Chemical compound [Ni].Cc1cccc1.Cc1cccc1 IHRNDXJDUYVDRB-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- RQKPFSQDBAZFJV-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C1C=CC=[C-]1.C1C=CC=[C-]1 RQKPFSQDBAZFJV-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- WTNNDNBKPMUIQG-UHFFFAOYSA-N nickel(2+);5-propan-2-ylcyclopenta-1,3-diene Chemical compound [Ni+2].CC(C)[C-]1C=CC=C1.CC(C)[C-]1C=CC=C1 WTNNDNBKPMUIQG-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Description
特許文献2には、成膜原料ガスとしてニッケルアミジネートを用い、還元ガスとしてNH3ガスおよびH2ガスを用いてCVDによりNi膜を成膜することが記載されている。
最初に、本発明の一実施形態に係るNi配線の製造方法の概要について説明する。図1は本発明の一実施形態に係るNi配線の製造方法を概略的に示すフローチャート、図2はその工程断面図である。
例えば、図10(a)に示すように、少なくとも、狭い幅(例えば幅が10〜50nm)のトレンチ203aと、広い幅(例えば幅が50〜100nm)のトレンチ203bを有しているウエハWにおいて、1回目のNi膜205の成膜を行った後、1回目のアニールによってNi膜205をリフローさせ、狭い幅のトレンチ203aを埋め込む(図10(b))。このとき、広い幅のトレンチ203bは完全には埋め込まれていない。次に、2回目のNi膜205の成膜を行い、その後、2回目のアニールを行って2回目のNi膜205をリフローさせ、広い幅のトレンチ203bを埋め込む(図10(c))。このようにすることにより、幅が異なるトレンチをトレンチ上部が詰まることなく良好に埋め込むことができる。
以下実験例について説明する。
[実験例1]
ここでは、Si基体上に、テトラエチルオルソシリケート(TEOS)を用いたCVDによりSiO2膜を形成し、このSiO2膜に実際のCD(ミドルCD)が30〜150nm、深さ200nmのトレンチを複数形成したウエハを準備した。
ここでは、Si基体上に、TEOSを用いたCVDによりSiO2膜を形成し、このSiO2膜に実際のCD(ミドルCD)が30〜150nm、深さ200nmのトレンチを複数形成したウエハを準備した。
ここでは、複数の条件で実際にNi配線を形成した場合の抵抗率測定結果について説明する。
所定の下部構造を有するSi基体上に、TEOSを用いたCVDによりSiO2膜を形成し、このSiO2膜に実際のCD(ミドルCD)が約30nmのトレンチを複数形成したウエハを準備した。このような構造のウエハに対し、CVDにより厚さ1nmのTiN膜からなるバリア膜を成膜し、次いで種々の条件でNi膜の埋め込みを行い、次いでPVDにより厚さ100nmのNi膜の積み増し層を形成後、CMPを3分間行った。
ここでは、CDを変化させて実際にNi配線を形成した場合の抵抗率測定結果について説明する。
実験例3と同様、所定の下部構造を有するSi基体上に、TEOSを用いたCVDによりSiO2膜を形成し、このSiO2膜にCDを変えて複数のトレンチを形成した複数のウエハを準備した。各ウエハのトレンチのCDは、53nm、41nm、35nm、30nmとした。これらのウエハに対し、CVDにより厚さ1nmのTiN膜からなるバリア膜を成膜し、次いで上記実験例3の条件3と同様の条件で成膜とアニールによるリフローを2回繰り返してNi膜の埋め込みを行い、次いでPVDにより厚さ100nmのNi膜の積み増し層を形成後、CMPを3分間行った。これらについて抵抗率を測定した。
次に、上述したNi配線の製造方法を実施するために用いられる成膜システムの一例について説明する。
図16に示すように、本例の成膜システム300は、平面形状が七角形をなす真空搬送室301を有し、真空搬送室301の4つの壁部にそれぞれゲートバルブGを介してTiN膜成膜装置302、Ni膜成膜装置303、アニール装置304、および積み増し層形成装置305が接続されている。TiN膜成膜装置302は、CVDまたはALDによりバリア膜としてのTiN膜を成膜するものである。Ni膜成膜装置303は、CVDまたはALDによりトレンチを埋め込むためのNi膜を成膜するものである。アニール装置304は、Ni膜成膜後にウエハをアニールしてNi膜をトレンチ内にリフローするためのものである。積み増し層形成装置305は、埋め込みのためのNi膜の上にさらにPVDまたはCVDにより次のCMP処理に備えてNi膜の積み増し層を形成するためのものである。真空搬送室301内は、真空ポンプにより排気されて所定の真空度に保持される。
図17は、Ni膜成膜装置303の一例を示す断面図である。このNi膜成膜装置303は、気密に構成された略円筒状のチャンバー1を有しており、その中には被処理基板であるウエハWを水平に支持するためのサセプタ2が、後述する排気室の底部からその中央下部に達する円筒状の支持部材3により支持された状態で配置されている。このサセプタ2は例えばAlN等のセラミックスからなっている。また、サセプタ2にはヒーター5が埋め込まれており、このヒーター5にはヒーター電源6が接続されている。一方、サセプタ2の上面近傍には熱電対7が設けられており、熱電対7の信号はヒーターコントローラ8に伝送されるようになっている。そして、ヒーターコントローラ8は熱電対7の信号に応じてヒーター電源6に指令を送信し、ヒーター5の加熱を制御してウエハWを所定の温度に制御するようになっている。サセプタ2の内部のヒーター5の上方には、高周波電力印加用の電極27が埋設されている。この電極27には整合器28を介して高周波電源29が接続されており、必要に応じて電極27に高周波電力を印加してプラズマを生成し、プラズマCVDを実施することも可能となっている。なお、サセプタ2には3本のウエハ昇降ピン(図示せず)がサセプタ2の表面に対して突没可能に設けられており、ウエハWを搬送する際に、サセプタ2の表面から突出した状態にされる。また、サセプタ2は昇降機構(図示せず)により昇降可能となっている。
ウエハ搬送機構310によりウエハWをNi膜成膜装置303のチャンバー1内に搬入した後、ウエハWを載置台2上に載置する。そして、ウエハ搬送機構310を真空搬送室301に戻し、ゲートバルブGを閉じる。載置台2上のウエハWをヒーター5により所定の温度、例えば200〜300℃の範囲内の所定の温度に加熱するとともに、排気機構20によりチャンバー1内を排気しつつ、Arガス供給源33および52からパージガスとしてArガスを供給してチャンバー1内の圧力調整を行い、次いでArガス供給源33からバブリング配管32を介して成膜原料タンク31内にArガスを供給してバブリングし、原料ガス送出配管36および第1のプリフローライン61を介してNi化合物ガスであるニッケルアルキルアミジネートのプリフローを行うとともに、NH3ガス供給源42から分岐配管40a、配管40および第2のプリフローライン62を介してNH3ガスのプリフローを行う。
以上、本発明の実施形態について説明したが、本発明は、上記実施形態に限定されることなく、本発明の技術思想の範囲内で種々変形可能である。例えば、上記実施形態で用いた成膜システム、Ni膜成膜装置は、あくまで例示であって、本実施形態に限るものではない。
2;サセプタ
5;ヒーター
10;シャワーヘッド
30;ガス供給機構
31;成膜原料タンク
42;NH3ガス供給源
43;H2ガス供給源
201;基体
202;層間絶縁膜
203;トレンチ
204;バリア膜
205;Ni膜
206;積み増し層
207;Ni配線
300;成膜システム
301;真空搬送室
302;TiN膜成膜装置
303;Ni膜成膜装置
304;アニール装置
W;半導体ウエハ
Claims (15)
- 表面に凹部が形成された基板に対し、ニッケル膜を形成し、前記凹部を埋めてニッケル配線を製造するニッケル配線の製造方法であって、
前記基板の表面に、成膜原料となるニッケル化合物と、還元ガスとなるNH3ガスおよびH2ガスを用いてCVDまたはALDによりニッケル膜を形成し、前記凹部を部分的に埋め込む工程と、
前記基板をアニールして前記基板表面および前記凹部側面の前記ニッケル膜を前記凹部にリフローさせる工程とを有し、
前記ニッケル膜の成膜と前記アニールとを2回以上繰り返し、
1回目のニッケル膜の成膜と1回目のアニールにより、前記凹部を部分的に埋め込み、2回目のニッケル膜の成膜と2回目のアニールにより、前記凹部を完全に埋め込み、
前記2回目の成膜の際の還元ガスのNH 3 ガスとH 2 ガスとの流量比率であるNH 3 /H 2 比の値は、前記1回目の成膜の際のNH 3 /H 2 比の値よりも小さいことを特徴とするニッケル配線の製造方法。 - 前記基板は、基体と、該基体上に形成された下地膜を有し、前記凹部は前記下地膜に形成されていることを特徴とする請求項1に記載のニッケル配線の製造方法。
- 前記基体は半導体からなり、前記下地膜は前記基体の所定の下部構造の上に形成された層間絶縁膜であり、前記凹部はトレンチであることを特徴とする請求項2に記載のニッケル配線の製造方法。
- 前記基板の上にバリア膜を成膜する工程をさらに有し、前記ニッケル膜は前記バリア膜の上に形成されることを特徴とする請求項1から請求項3のいずれか1項に記載のニッケル配線の製造方法。
- 前記ニッケル膜を成膜する際の、NH3ガスとH2ガスとの流量比率であるNH3/H2比の値は、0.25〜4の範囲であることを特徴とする請求項1から請求項4のいずれか1項に記載のニッケル配線の製造方法。
- 前記ニッケル膜を成膜する際の、前記NH3/H2比の値は、0.67〜4の範囲であることを特徴とする請求項5に記載のニッケル配線の製造方法。
- 前記ニッケル膜を成膜する際の、前記NH3/H2比の値は、0.67〜2.33の範囲であることを特徴とする請求項6に記載のニッケル配線の製造方法。
- 前記ニッケル膜を成膜する際の前記成膜原料となるニッケル化合物は、ニッケルアミジネートを含むことを特徴とする請求項1から請求項7のいずれか1項に記載のニッケル配線の製造方法。
- 前記アニールは、200〜600℃の範囲の温度で実施されることを特徴とする請求項1から請求項8のいずれか1項に記載ニッケル配線の製造方法。
- 前記基板は、幅または径が相対的に小さい第1の凹部と、幅または径が相対的に大きい第2の凹部の少なくとも2種類の凹部を有し、
前記1回目のニッケル膜の成膜と前記1回目のアニールにより、前記第1の凹部を完全に埋め込む一方、前記第2の凹部を部分的に埋め込み、前記2回目のニッケル膜の成膜と前記2回目のアニールにより、前記第2の凹部を完全に埋め込むことを特徴とする請求項1から請求項9のいずれか1項に記載のニッケル配線の製造方法。 - 前記1回目の成膜の際の膜厚は、前記2回目の成膜の際の膜厚よりも小さいことを特徴とする請求項1から請求項10のいずれか1項に記載のニッケル配線の製造方法。
- 前記ニッケル膜の成膜に先立って、前記ニッケル膜の下地をエッチバックして、前記凹部の間口を広げることを特徴とする請求項1から請求項11のいずれか1項に記載のニッケル配線の製造方法。
- 前記アニールの後、全面を研磨して、前記凹部以外の表面の膜を除去する研磨工程をさらに有することを特徴とする請求項1から請求項12のいずれか1項に記載のニッケル配線の製造方法。
- 前記研磨工程に先立って、前記ニッケル膜の上にニッケル膜からなる積み増し層を形成する工程をさらに有することを特徴とする請求項13に記載のニッケル配線の製造方法。
- コンピュータ上で動作し、ニッケル配線製造システムを制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項14のいずれかのニッケル配線の製造方法が行われるように、コンピュータに前記ニッケル配線製造システムを制御させることを特徴とする記憶媒体。
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