CN117936420A - 用于高压处理腔室的气体输送系统 - Google Patents

用于高压处理腔室的气体输送系统 Download PDF

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CN117936420A
CN117936420A CN202311843605.2A CN202311843605A CN117936420A CN 117936420 A CN117936420 A CN 117936420A CN 202311843605 A CN202311843605 A CN 202311843605A CN 117936420 A CN117936420 A CN 117936420A
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chamber
pressure
gas
gas delivery
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梁奇伟
斯里尼瓦斯·D·内曼尼
肖恩·S·康
阿迪卜·汗
怡利·Y·叶
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Micromaterials LLC
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Abstract

一种高压处理系统，用于处理基板上的层，所述系统包括：第一腔室；支撑件，支撑件用于将基板保持于第一腔室中；第二腔室，第二腔室邻近第一腔室；前级管道，前级管道用于从第二腔室移除气体；真空处理系统，真空处理系统经配置以将第二腔室内的压力降低至接近真空；阀组件，阀组件位于第一腔室与第二腔室之间，用于将第一腔室内的压力与第二腔室内的压力隔离；气体输送系统，气体输送系统经配置以在第一腔室与第二腔室隔离的同时将第一腔室内的压力提升至至少10个大气压；排气系统，排气系统包括排气线以从第一腔室移除气体；和共同外壳，共同外壳围绕第一气体输送模块和第二气体输送模块两者。

Description

用于高压处理腔室的气体输送系统
本申请是申请日为2018年11月07日申请的申请号为201880072935.7，并且发明名称为“用于高压处理腔室的气体输送系统”的发明专利申请的分案申请。
技术领域
本发明涉及用于集成电路制造的高压处理腔室。
背景技术
微电子电路和其他微型装置通常由基板制成，诸如硅基板或其他半导体材料的基板。在基板上施加多个金属层，以形成微电子部件或其他微型部件，或提供电气连接。这些金属层(例如铜)被由一系列的光刻、镀覆、蚀刻、抛光或其他操作镀覆到基板上并形成部件和互连。
为了获得所需的材料性质，基板通常经过退火工艺，其中基板通常被快速加热至约200-500℃。基板可在一段相对较短的时间，例如60-300秒内被保持在这些温度下。基板随后被快速冷却，而整体工艺通常仅需要数分钟。退火可用于改变基板上的材料层性质。退火亦可用于活性化掺杂剂、在基板上的膜之间驱动掺杂剂、改变膜对膜界面或膜对基板界面、使经沉积的膜致密化、或修复离子注入(ion implantation)所造成的损害。
随着微电子装置和互连的特征结构(feature)尺寸缩小，可允许的缺陷率大大地降低。一些缺陷来自污染物颗粒。其他缺陷可来自基板的某些区域的不完全处理，例如没有在沟槽底部长成膜。
过去已使用了各种退火腔室。在单一基板处理设备中，这些退火腔室通常将基板放置在加热元件与冷却元件之间(或之上)，以控制基板的温度分布。然而，获得精确的、可重复的温度分布以及可接受的缺陷水平，可呈现工程上的挑战。
发明内容
在一个示例中，提供一种用于处理基板上的层的高压处理系统。所述系统包括：第一腔室；支撑件，支撑件用于将基板保持于第一腔室中；第二腔室，第二腔室邻近第一腔室；前级管道(foreline)，前级管道用于从第二腔室移除气体；真空处理系统，真空处理系统经配置以将第二腔室内的压力降低；阀组件，阀组件位于第一腔室与第二腔室之间，用于将第一腔室内的压力与第二腔室内的压力隔离；气体输送系统，气体输送系统经配置以将一种或更多种气体引入第一腔室，并在气体位于第一腔室中的同时且在第一腔室与第二腔室隔离的同时将第一腔室内的压力提升至至少10个大气压；控制器，控制器经配置以操作气体输送系统和阀组件；排气系统，排气系统包括排气线以从第一腔室移除气体；和共同外壳(common housing)，共同外壳围绕第一气体输送模块和第二气体输送模块两者。气体输送系统包括第一气体输送模块以在第一压力下(至少10个大气压)输送第一气体，和第二气体输送模块以在第二压力下(小于第一压力但大于1个大气压)输送第一气体或成分不同于第一气体的第二气体。
实施方式可包括下列特征之一或更多者。
第二排气系统可被配置为从共同外壳移除气体。第二排气系统可被配置为从外壳引导气体至前级管道。第一和第二输送管线可将第一和第二气体输送模块耦接至第一腔室。包封壳体(containment enclosure)可被配置为将从第一和第二输送管线泄漏的气体转向至前级管道。共同外壳可与包封壳体流体性地隔离。
在另一示例中，一种用于处理基板上的层的高压处理系统包括：第一腔室；支撑件，支撑件用于将基板保持于第一腔室中；第二腔室，第二腔室邻近第一腔室；前级管道，前级管道用于从第二腔室移除气体；真空处理系统，真空处理系统经配置以将第二腔室内的压力降低至接近真空；阀组件，阀组件位于第一腔室与第二腔室之间，用于将第一腔室内的压力与第二腔室内的压力隔离；气体输送系统，气体输送系统经配置以将一种或更多种气体引入第一腔室，并在气体位于第一腔室中的同时且在第一腔室与第二腔室隔离的同时将第一腔室内的压力提升至至少10个大气压；排气系统，排气系统包括排气线以从第一腔室移除气体；和控制器。气体输送系统包括第一气体输送模块以在第一压力下(至少10个大气压)输送第一气体，以及第二气体输送模块以在第二压力下(小于第一压力但大于1个大气压)输送第一气体或成分不同于第一气体的第二气体。控制器被配置为操作气体输送系统、阀组件、真空处理系统和排气系统，使得阀组件将第一腔室与第二腔室隔离，随后第二气体输送模块将第一腔室从低于1个大气压的压力提升至第二压力，随后第二气体输送模块与第一腔室隔离，且随后第一气体输送模块将第一腔室从第二压力提升至第一压力。
实施方式可包括下列特征之一或更多者。
第一气体输送模块可包括泵，泵经配置以在将第一气体输送至第一腔室之前，提升第一气体的压力。第二气体输送模块可使用质量流量控制器、液体流量计或液体流量控制器，以将气体引导至第一腔室。第一压力传感器可定位在第一腔室中传感器，并且第二压力传感器可定位在第二腔室中传感器。控制器可被配置为使排气系统减少第一腔室中的压力，并使真空处理系统减少第二腔室中的压力。控制器可被配置为比较来自第一压力传感器和第二压力传感器的测量结果，并控制排气系统和真空处理系统，使得第一腔室中的压力高于第二腔室中的压力。
在另一示例中，一种操作高压处理系统的方法，包括以下步骤：将第一腔室和第二腔室调整至第一压力，第一压力小于一个大气压；在第一腔室与第二腔室之间的隔离阀为打开的同时，将基板从第二腔室传送入第一腔室；在隔离阀为关闭的同时，将第一腔室从第一压力减少至第二压力，并将第二腔室从第一压力减少至第三压力；由第二气体输送模块将第一腔室加压至第四压力，第四压力高于大气压力并小于10个大气压；由第一气体输送模块将第一腔室加压至第五压力，第五压力高于10个大气压；在第一腔室处于第五压力的同时，处理基板；对第一腔室抽气；以及打开隔离阀并将基板从第一腔室移除。
实施方式可包括下列特征之一或更多者。
将第一腔室加压至第五压力的步骤可包括：供应第一气体至第一腔室，且将第一腔室加压至第四压力的步骤可包括：供应具有不同成分的第二气体至第一腔室。第一气体可包括H2或NH3的至少一者。由第二气体输送模块将第一腔室加压的步骤可包括：由在第一气体输送模块与第一腔室之间的输送管线中的高压隔离阀，将第一气体输送模块与第一腔室隔离；以及通过打开在第二气体输送模块与第一腔室之间的输送管线中的低压隔离阀，将第二气体输送模块与第一腔室流体性地耦接。由第一气体输送模块将第一腔室加压的步骤可包括：由低压隔离阀将第二气体输送模块与第一腔室隔离；以及通过打开高压隔离阀，将第一气体输送模块与第一腔室流体性地耦接。
第三压力可小于第二压力。可比较来自第一腔室中的第一压力传感器与第二腔室中的第二压力传感器的测量结果，并继续减少第一腔室和第二腔室中的压力，直到第一腔室中的压力高于第二腔室中的压力为止。对第一腔室抽气的步骤可包括：将第一腔室中的压力降低至第六压力，第六压力小于第一压力。第六压力可大于第三压力。
实施方式可包括下列优点之一或更多者。
能够更安全地在腔室中建立高压。能够检测泄漏。
能够在整个基板上更均匀地处理或形成层。此外，高压处理亦能够进行在低压下无法进行的化学反应。
在附图和下面的说明中阐述了一个或更多个具体实施方式的细节。根据说明书、附图以及权利要求书，其他特征、目的和优点将是显而易见的。
附图说明
图1为处理平台的示意图。
图2为具有增强安全特征的高压处理系统的示意图。
图3为图示说明用于操作高压处理系统的方法的流程图。
图4为具有增强安全特征的高压处理系统的另一实施方式的示意图。
图5为图示说明用于操作高压处理系统的方法的流程图。
图6为用于高压处理系统的腔室的示意性侧视图。
在各图中，类似的参考符号指示类似的元件。
具体实施方式
如前所述，一些缺陷可因基板某些区域的不完全处理而造成。然而，高压处理(例如退火或沉积)可提升整个基板上处理的一致性。具体而言，退火可发生在高压环境中，在使用退火工艺形成层时(例如藉由热氧化或其他工艺，其中化学物质扩散到设置在基板上的材料中并与其反应)，高压可帮助提升基板上材料层的表面覆盖的彻底性。例如，可以减少层在沟槽中的处理形成的问题。因此，能够在整个基板上更均匀地处理或形成层。此外，高压处理(例如退火或沉积)亦能够进行在低压下无法进行的化学反应。
另一问题为，在温度超过约70℃时，某些材料(诸如铜)将在暴露于氧时快速氧化。若铜或其他材料氧化，则基板可不再能被使用，或者在进一步处理之前必需先将氧化层移除。这些都是对于有效率地进行制造所无法接受的选项。因此，一个设计因素为将基板与氧隔离，特别是在基板温度超过约70℃时。因为氧当然会存在于环境空气中，在退火期间避免铜氧化也可呈现工程上的挑战。如本文所描述的，基板可被传送于高压处理腔室与低压(例如接近真空)环境中的不同的处理腔室之间，以避免基板被污染和氧化。
另一个考虑因素是压力。非常高的压力可提升所产生的基板的一致性和品质。然而，具有高压(例如高于10atm、高于15atm或高达20atm)的系统存在很高的破裂和失控风险。具有增强安全特征的系统有益于使用在这种超高压处理中。
图1图示集成多腔室基板处理系统，此系统适合用于执行物理气相沉积、化学气相沉积和/或退火工艺的至少一个实施方式。一般而言，多腔室基板处理系统包括至少一个高压处理腔室(例如能够在高于10个大气压的压力下操作以执行高压工艺，诸如沉积或退火)以及至少一个低压处理腔室(例如能够在低压(例如低于1个大气压)下操作以执行低压工艺，诸如蚀刻、沉积或热处理)。在一些实施方式中，多腔室处理系统为具有中央传送腔室的群集工具，中央传送腔室处于低压且可从中央传送腔室进出多个处理腔室。
本文所描述的工艺和系统的一些实施方式涉及沉积用于特征结构限定的材料层(例如金属和金属硅化物阻挡层)。例如，第一金属层被沉积在硅基板上并经过退火以形成金属硅化物层。第二金属层随后被沉积在金属硅化物层上以填充特征结构。形成金属硅化物层的退火工艺可由多个退火操作执行。
图1为处理平台100的一个实施方式的示意性俯视图，包括两个传送腔室102、104、分别位于传送腔室102、104中的传送机械手106、108、以及设置在两个传送腔室102、104上的处理腔室110、112、114、116、118、130。第一传送腔室102和第二传送腔室104为中央真空腔室，与邻近的处理腔室110、112、114、116、118、130界面连接。
第一传送腔室102和第二传送腔室104由直通腔室(pass-through chamber)120分隔开，直通腔室120可包括冷却腔室或预热腔室。在第一传送腔室102与第二传送腔室104在不同压力下操作时，在处理基板期间，直通腔室120亦可被抽气或通气。例如，第一传送腔室102可在约100毫托与约5托之间(诸如约40毫托)的压力下操作，且第二传送腔室104可在约1x10-5托与约1x10-8托之间(诸如约1x10-7托)的压力下操作。
由可编程控制器122操作处理平台100。控制器122可控制传送机械手106、108以在腔室之间传送基板，并可使处理平台100的每一腔室执行单独的操作以处理基板。
第一传送腔室102与两个除气腔室124、两个装载锁定腔室128、反应预清洗腔室118、至少一个物理气相沉积腔室110、以及直通腔室120耦接。预清洗腔室可为购于美国加州圣克拉拉(Santa Clara)市的应用材料公司的PreClean II腔室。通过装载锁定腔室128将基板(未示出)装载入处理平台100。例如，工厂界面模块132(若存在)将负责接收来自人类操作者或自动化基板处理系统的一个或更多个基板(例如基板盒)或封闭式基板舱。工厂界面模块132可开启基板盒或基板舱(若可应用)，并将基板移入和移出装载锁定腔室128。处理腔室110、112、114、116、118、130从传送腔室102、104接收基板、处理基板、并允许基板被传送回传送腔室102、104。在将基板装载到处理平台100之后，分别在除气腔室124和预清洗腔室118中依次对基板进行除气和清洗。
每一处理腔室由隔离阀与传送腔室102、104隔离，隔离阀允许处理腔室在与传送腔室102、104不同的真空水平下操作，并防止处理腔室中使用的任何气体被引入传送腔室。装载锁定腔室128亦由隔离阀与传送腔室102、104隔离。每一装载锁定腔室128具有门，门向外部环境开启，例如向工厂界面模块132开启。在正常操作中，从工厂界面模块132通过门将装载有基板的盒放入装载锁定腔室128，并关闭门。装载锁定腔室128随后被抽气至与传送腔室102相同的压力，并打开装载锁定腔室128与传送腔室102之间的隔离阀。传送腔室102中的机械手被移入定位，且一个基板被从装载锁定腔室128移除。装载锁定腔室128装配有升降机构，以在一个基板被从盒移除时，升降机移动盒中的基板堆叠以将另一基板放置于传送平面中，使得基板可被放置在机械刃上。
传送腔室102中的传送机械手106随着基板旋转，使得基板对齐处理腔室位置。处理腔室中的任何有毒气体被冲洗掉、压力水平被设为与传送腔室相同、并开启隔离阀。传送机械手106接着将基板移入处理腔室，其中基板被提离机械手。传送机械手106随后从处理腔室缩回，并关闭隔离阀。处理腔室随后经过一系列的操作，以对基板执行所指定的处理。在完成时，处理腔室被调回与传送腔室102相同的环境，并开启隔离阀。传送机械手106将基板从处理腔室移除，且随后将基板移至另一处理腔室以进行另一操作，或将基板再放回装载锁定腔室128以在基板盒整体已被处理后移出处理平台100。
传送机械手106、108分别包括机械臂107、109，机械臂107、109支撑并于不同的处理腔室之间移动基板。传送机械手106在除气腔室124与预清洗腔室118之间移动基板。基板随后可被传送至长间距(long throw)PVD腔室110，以在基板上沉积材料。
第二传送腔室104耦接至处理腔室116、112、114、130的群集。处理腔室116、112可为用于按照操作者所需来沉积材料(诸如钨)的化学气相沉积(CVD)腔室。经PVD处理的基板被从第一传送腔室102，经由直通腔室120移入第二传送腔室104。此后，传送机械手108移动基板于处理腔室116、112、114、130之一或更多者之间，以进行处理所需的材料沉积和退火。
当然，前述实施方式仅为示例性的；每一传送腔室可具有不同数量的处理腔室(例如一至五个腔室)；处理腔室可具有不同的功能分配；系统可具有不同数量的传送腔室(例如仅有单个传送腔室)；以及传送腔室可被整体省略，且系统可仅具有单个独立式处理腔室。
图2图示说明受控制的高压处理系统200，高压处理系统200创建高压环境以处理基板，并在基板被传送于处理腔室之间时对基板创建低压环境。受控制的高压处理系统200包括高压内侧第一腔室202和低压外侧第二腔室204。
第一腔室202可对应于处理平台100的处理腔室110、112、114、116、118、130之一，且第二腔室204可对应于处理平台100的传送腔室102、104之一。或者，在一些实施方式中，处理腔室110、112、114、116、118、130之一包括第一腔室202和第二腔室204两者。第一腔室202可对应于内侧腔室，且第二腔室204可对应于围绕内侧腔室的外侧腔室。
可独立于第二腔室204中的压力，来控制第一腔室202内的压力。若第一腔室202和第二腔室204不同于传送腔室，则可独立于传送腔室内的压力来控制第一腔室202和第二腔室204的压力。受控制的高压系统200进一步包括气体输送系统206、真空处理系统208以及控制器210。在一些示例中，处理平台100的控制器122可包括控制器210。
第一腔室202经配置(例如密封和加强)以容纳非常高的压力(例如至少10个大气压的压力，例如40-80atm的压力)。相对地，第二腔室204经配置(例如密封和加强)以容纳非常低的压力(例如低于1个大气压的压力，例如低至约100毫托的压力)。第二腔室204的低压环境，可抑制基板或基板上沉积的材料的污染和/或氧化。
第二腔室204邻近于第一腔室202。在一些实施方式中，第二腔室204亦围绕第一腔室202(若第二腔室204未围绕第一腔室，则第二腔室仍可被视为外侧腔室，因为基板将穿过第二腔室以到达第一腔室)。在一些实施方式中，第二腔室204实质上围绕(例如至少80％的)第一腔室202。
如前所述，第二腔室204可对应于传送腔室(例如传送腔室102或传送腔室104)，传送腔室于不同的处理腔室之间接收基板。或者，第二腔室204可为位于第一腔室202与传送腔室102(或传送腔室104)之间的单独腔室。
内侧(例如第一)腔室202包括基板支撑件218(例如底座)以支撑工件(诸如基板10)，工件待被处理(例如经受退火或在其上沉积材料层)。支撑件218被定位或可被定位在第一腔室202内。在一些实施方式中，基板10直接位于底座的平坦顶表面上。在一些实施方式中，基板位于从底座凸起的升降销上。
第一腔室202与第二腔室204之间的第一阀组件212使第一腔室202内的压力与第二腔室204内的压力隔离。第一腔室202内的高压环境可因此被密封并与第二腔室204内的低压环境隔离。第一阀组件212可开启以使基板10能被从第二腔室204(或通过第二腔室204)传送进入第一腔室202，或使基板能被从第一腔室202传送进入第二腔室204(或通过第二腔室204)。
第二腔室204与外部环境(例如传送腔室)之间的第二阀组件213使第二腔室204内的压力与第二腔室204外侧的压力隔离。
气体输送系统206经配置以加压第一腔室202。具体而言，气体输送系统206可输送处理气体至第一腔室202并在第一腔室中建立高压，例如处于至少10个大气压的压力，例如高于15atm、高于20atm、高于30atm、高达50atm、高达60atm、高达70atm、高达80atm。处理气体可例如在退火工艺期间与基板10(例如基板10上的层)反应，或作为要沉积到基板上的材料的来源。
在一些实施方式中，气体输送系统206包括第一气体输送模块242以输送第一气体至第一腔室202，以及第二气体输送模块244以输送第一气体或具有不同于第一气体的成分的第二气体至第一腔室202。第一气体输送模块242经配置以于高压(例如10至80bar的压力)输送第一气体至第一腔室202。相对地，第二气体输送模块244经配置以于低压(例如少于1bar)输送气体。
输送模块242、244连接至供应相应气体的设施供应或气体槽。输送模块242、244由各自的输送管线252、254连接至腔室202。至第一气体输送模块242的输送管线252可包括高压隔离阀232，且至第二气体输送模块244的输送管线254可包括低压隔离阀234。
可于高于大气压力但相较于第一腔室中的最终压力而言仍为相对较低的压力下，将第一气体供应至第一气体输送模块242。例如，可于40至80psi(约2.7至5.4atm)的压力下，将第一气体输送至第一气体输送模块242。第一气体输送模块242包括泵(例如增压泵)。泵提升入送第一气体(诸如(例如)氢气)的压力。泵可提升压力约二至二十倍，在一些情况中高达80atm。
可于高于大气压力但相较于第一腔室中的最终压力而言仍为相对较低的压力下，将气体供应至第二气体输送模块244。例如，亦可于40至80psi(约2.7至5.4atm)的压力下，将气体输送至第二气体输送模块244。然而，第二气体输送模块244不需要包括泵。相对地，可使用传统的质量流量控制器、液体流量计或液体流量控制器，以将气体引导至第一腔室202。
第一气体输送模块242和第二气体输送模块244可被包含在共同外壳246内。在一些实施方式中，外壳246内部与下面所论述的其他包封容器流体隔离。排气系统248可用于对外壳246的内部抽气。这可防止在气体输送系统发生泄漏时，腐蚀性或爆炸性的气体集聚在外壳内。在一些实施方式中，包封组件包括多个零件，每一零件为承压壳体，其围绕并封装相应的气体输送模块。例如，第一气体输送模块242可被封装在第一外壳中，水蒸汽输送模块244在外壳中。排气系统248可耦接至前级管道214，或耦接至单独的真空系统。
第一气体包括处理气体，例如H2、NH3、O2或O3。在一些实施方式中，第一气体为实质上纯净的处理气体。或者，第一气体可包括处理气体和惰性气体(例如氩气)两者。
如前所述，来自第二气体输送模块244的气体的成分可与第一气体相同，或可为不同的第二气体。第二气体亦可为实质上纯净的处理气体，或处理气体和惰性气体的组合。在一些实施方式中，第二气体包括水，例如第二气体可为水蒸汽，诸如干燥或过热蒸汽。
高压系统200包括前级管道214，前级管道214将第二腔室204连接至真空处理系统208。外侧隔离阀216沿着前级管道214布置，以将第二腔室204内的压力与真空处理系统208的压力隔离。可操作外侧隔离阀216以调整第二腔室204内的压力，以及释放第二腔室204内的气体。外侧隔离阀216可与真空处理系统208结合操作，以调节第二腔室204内的压力。
真空处理系统208经配置以将第二腔室204的压力降低至接近真空的压力，例如少于1毫托。特定而言，真空处理系统208可将第二腔室204内的压力降至接近真空，从而产生适当的低压环境以用于传送基板。在操作期间，在第一腔室202中达到的超高压力(例如高于10atm、高于15atm)需要第二腔室204中的相应较高压力(低于约1atm(例如约0.85atm或640托))。
在一些实例中，真空处理系统208包括干式线泵(dry line pump)。为了容许异常高的压力(例如防止由泄漏所造成的高压破坏干式线泵)，气体在抵达干式线泵之前被扩展。在一些实例中，气体流经大直径扩散器(例如20英寸(inch)乘以5英尺(ft.)高的扩散器)。
气体输送系统206包括排气线211以从第一腔室202排出第一气体，由此将第一腔室202减压。在一些实施方式中，排气线耦接至排气系统(例如前级管道214和真空处理系统208)或单独的真空系统源。排气线211可包括内侧排气隔离阀230，内侧排气隔离阀230可被关闭以将第一腔室202与排气系统隔离。
为了提升安全性，系统200可包括包封组件。包封组件可至少包括包封壳体260，包封壳体260在输送管线252、254进入腔室204处包围输送管线252、254以使其流体连接至腔室202。此外，每一输送管线252、254可被包围在各自的导管256、258中，导管256、258在外壳246与壳体260之间延伸。
包封组件亦可包括包封排气线268。包封排气线268包围包封壳体260与排气系统之间的排气线211。包封排气线268也将包封壳体260流体连接至排气系统(例如至前级管道214和真空处理系统208)或单独的真空系统源。因此，在输送管线252、254中(或来自输送管线与第二腔室204的接点)的任何泄漏，被抽吸通过包封壳体260并流至排气系统。
输送管线252、254的每一管线具有减压管线，减压管线在包封壳体260内具有减压阀252a、254a。由减压管线释放的任何积累在输送管线252、254内的压力将流入包封壳体260并从系统200移除(例如通过包封排气线268)，或在一些实例中经由连接至排气系统的单独的排气通道移除。
系统200亦包括将第一腔室202耦接至减压阀276的减压线。减压阀276可被定位在第二腔室204中。在此情况中，若第一腔室202中的压力超过可允许水平，则由减压阀276释放的气体将流入外侧腔室204且通过前级管道214被移除。或者，减压阀276可被定位在包封壳体260中。在此情况中，由减压阀276释放的气体将通过排气线211被移除。
因此，所有加压部件可被包含在包封组件内，使得系统200可减少非期望的泄漏、断裂或破裂，而不用将加压气体暴露于大气。
系统200中包括多个气体传感器280。具体而言，气体传感器280可为氢传感器。传感器280被整合入可能的泄漏位置中，例如在包封壳体260内和排气线268内。若任何传感器280检测到气体泄漏(例如氢泄漏)，则控制器210将检测来自传感器280的信号，并将首先关闭气体输送模块242、关闭第一气体输送模块242内的泵、或采取其他适当的行动。响应于由一个或更多个传感器280检测到的泄漏，输送管线252、254中的隔离阀亦可被关闭。
此外，系统200可包括一个或更多个压力传感器282。例如，第一腔室202中可有第一压力传感器282，而第二腔室204中可有第二压力传感器282。压力传感器282耦接至控制器210。
图3图示说明一种操作系统200以处理基板的方法。系统200开始于打开隔离阀212、213。由机械手106或108通过开启阀212、213和第二腔室204，将基板插入第一腔室202(于操作302)。控制器可操作机械手以将基板10载入第一腔室202，并将基板10放置到底座上。
第一腔室202和第二腔室204被真空系统抽气至第一压力(例如100-300毫托)，且随后在基板10的传送期间维持在低压(于操作304)。这可帮助防止基板10氧化。
第一隔离阀212被关闭(于操作306)。可选地，亦可关闭第二隔离阀213。
使用真空系统以进一步将第一腔室202抽气至低于第一压力的第二压力，并将第二腔室抽气至低于第二压力的第三压力(于操作308)。例如，第一压力和第二压力两者可为1-50毫托。第一压力可为100-300毫托，且第二压力可为1-50毫托。
第一腔室202和第二腔室204中的压力由传感器282测量，且控制器可接收来自传感器282的信号。
若腔室202、204任一者中的压力超过泄漏阈值，则这可指示气体正从外部环境泄漏入腔室。在此情况中，可中止对基板的处理。
此外，控制器可比较测得的压力(于操作310)。若第一腔室中的压力P1与第二腔室中的压力P2之间的差异未超过阈值，则可继续对腔室抽气。
一旦腔室202、204达到所需压力，则关闭内侧排气隔离阀230并打开低压隔离阀234(于操作312)。这将第一腔室202与排气系统隔离，但将第一腔室202耦接至第二气体输送模块244。
接着，第二气体输送模块244将第一气体或第二气体输送至第一腔室202(于操作314)。这将第一腔室202中的压力提升至高于第一压力的第四压力。第四压力可高于大气压力，例如为40-80psi的压力。可使用常见的流量控制(例如不需要压力伺服控制算法)来执行由第二气体输送模块244输送气体。
一旦内侧腔室202已被升高至第四压力，则关闭低压隔离阀234并打开高压隔离阀232(于操作316)。这将第一腔室202与第二气体输送模块244隔离，例如以避免随后操作中的高压对第二气体输送模块244造成损害。这亦将第一腔室202耦接至第一气体输送模块242。
接着，第一气体输送模块242将第一气体输送至第一腔室202(于操作318)。这将第一腔室202中的压力提升至高于第四压力的第五压力。如前所述，第五压力可为10-80大气压。第一气体输送模块242的气体输送可由控制器210使用压力伺服控制算法来控制。
控制器可比较第一腔室202内的测得的压力P1与所需的处理压力PP(于操作320)。若第一腔室中的压力P1小于所需的处理压力PP，则可继续对第一腔室202加压。
一旦内侧腔室202已升至第五压力，则关闭高压隔离阀232(于操作322)。这使第一腔室202与第一气体输送模块242隔离。
现在在第一腔室202中处理基板10(于操作324)。处理可持续一设定时间，例如由控制器中的定时器测量的时间。第一气体可为与基板10上的层反应的退火气体。或者，气体可包括要沉积到基板10上的材料。第一腔室202中的适当温度和压力条件可使得发生材料退火或沉积。在处理(例如退火或沉积)期间，控制器可操作支撑件218中的一个或更多个加热元件219，以对基板10加热，以协助处理基板10上的材料层。
在完成对基板10上材料层的处理时，关闭外侧隔离阀216，并打开内侧隔离阀230(于操作326)。这只将第一腔室202耦接至排气系统，同时保持密封第二腔室204。
内侧腔室被抽气至第六压力(于操作328)。第六压力可小于第一压力但大于第三压力，例如约等于第二压力。因此，压力处于接近真空的压力，使得第一腔室202与第二腔室204之间的压力差为较小。
同样的，控制器可比较所测得的压力(于操作330)。若第一腔室中的压力P1与第二腔室中的压力P2之间的差异未超过阈值，则可继续对腔室抽气。
一旦内侧腔室202到达第六压力，则打开第一隔离阀212(于操作332)。此外，第二隔离阀若为关闭，则亦可将其打开。接着打开外侧排气隔离阀116。因为内侧与外侧排气共享相同的前级管道，在内侧排气期间保持关闭外侧排气隔离阀，可保护升降销和加热器波纹管免受损坏。
最后，可使用机械手106或108将基板10从第一腔室202移除，且在需要时传送至随后的处理腔室。
图4图示说明受控制的高压处理系统200′，高压处理系统200′创建高压环境以处理基板，并在基板被传送于处理腔室之间时对基板创建低压环境。除了第二气体输送模块244′为可在高压下(例如在10-80bar的压力下)将第二气体输送至第一腔室202的高压气体输送模块之外，系统200′可与系统200相同。第二气体为液体蒸汽，例如水蒸汽。输送管线254中的阀234′为第二高压隔离阀。
图5图示说明一种操作系统200或200′以处理基板的方法。此程序类似于参照图3所说明的程序，除了下面所论述的以外。
具体而言，操作系统200或200′的方法在单一操作中而非在多个阶段中在第一腔室202中供应气体以到达高压。因此，可仅使用系统200的第一气体输送模块242、或仅使用系统200′的第一气体输送模块242、或仅使用系统200′的第二气体输送模块244′、或使用系统200′的第一气体输送模块242和第二气体输送模块244′两者但操作第二气体输送模块244′以模拟第一气体输送模块242(例如同时开关气体输送模块的隔离阀等等)，来执行此程序。
具体而言，关闭内侧排气隔离阀230(于操作312′)，并打开高压隔离阀232和/或234′(于操作316′)。第一气体输送模块242和/或第二气体输送模块244′将第一气体和/或第二气体输送至第一腔室202(于操作318′)。这将第一腔室202中的压力从第二压力提升至第五压力。如前所述，第五压力可为10-80大气压。第一气体输送模块242的气体输送可由控制器210使用压力伺服控制算法来控制。
输送至第一腔室202的气体可包括H2或NH3，例如若仅使用系统200的第一气体输送模块242或仅使用系统200′的第一气体输送模块242。或者，输送至第一腔室202的气体可包括液体蒸汽(例如水蒸汽)，例如若仅使用系统200′的第二气体输送模块244′。或者，输送至第一腔室202的气体可包括水蒸汽与另一处理气体的混合物，例如若使用系统200′的第一气体输送模块242和第二气体输送模块244′两者。
图6图示说明高压处理系统200(或200′)中第一腔室202和第二腔室204的可能配置。高压处理系统200进一步包括第一腔室202与第二腔室204之间的阀组件212。此实施方式可让第二腔室204作为传送腔室的一部分(例如处于压力平衡中)。
第二腔室204可由内侧壁420与外侧壁424之间的容积来界定。此外，基板10可被支撑在(提供基板支撑件218的)底座418上。一个或更多个元件219(例如电阻式加热器)可被嵌入底座418。基板可直接位于底座418上，或位于延伸穿过底座的升降销组件430上。
由臂425形成阀组件212，臂425可相对于第一腔室202的内侧壁420与基座422移动。具体而言，阀组件212包括第一腔室202与第二腔室204之间的狭缝阀423。狭缝阀423包括狭缝423a和臂425。狭缝423a延伸穿过第一腔室402的内侧壁420之一。臂425的垂直端425a定位在第一腔室202之外，同时臂425的水平端425b定位在第一腔室202内。臂425的垂直端425a可被定位在第二腔室204内，并由定位在第二腔室204内的致动器驱动。或者，臂425的垂直端425a被定位在第二腔室204外，并由也定位在第二腔室204外的致动器428驱动。
臂425延伸穿过狭缝423a，并可被相对于壁420移动，使得臂425可被移动至与壁420形成密封的位置。致动器428耦接至臂425的垂直端425a，并相对于壁420驱动臂425的水平端425b。臂425可垂直移动以覆盖或露出狭缝423a。具体而言，臂425的垂直端425a可为凸缘(或包括凸缘)，凸缘实质平行于内侧壁420的邻近内侧表面而延伸。臂425亦可被侧向驱动，使得臂425的水平端425b可接合或脱开壁420。臂425亦可延伸穿过外侧壁424中的孔426。
阀组件212可在打开位置与关闭位置之间移动。在阀组件212位于打开位置时，臂425的水平端425b与壁420(例如壁420的内侧表面)侧向间隔开。此外，臂425的水平端425b被垂直定位，以露出狭缝423a。狭缝423a因此提供开口以致使第一腔室202与第二腔室204之间流体连通，并亦致使基板10被移入和移出第一腔室202(例如通过上文论述的机械手)。
在阀组件212位于关闭位置时，臂425的水平端425b覆盖狭缝423a并接触壁420之一，藉以形成密封而将第一腔室202与第二腔室204隔离。在加压时，凸缘或水平端425b接触壁420的界定第一腔室202的内侧表面。沿着水平端425b的周围在接触壁420的表面上放置O形环，在第一腔室402被加压时帮助加强包封的密封程度。
底座418中的加热元件219加热第一腔室202中的气体(例如高达250℃)。为了防止O形环受损害，臂425可包括内部气体通道480。内部气体通道480被从冷却气源484供应，并为让冷却气体流经臂425的导管。内部气体通道480可延伸穿过水平端425b，或穿过水平端425b和垂直端425a两者。内部气体通道与冷却气源484可经配置以使得在阀组件212位于打开位置时，没有气体从冷却气源484提供，而在传送基板时防止冷却气体流入。
已说明了本发明的数个实施方式。然而应理解，在不背离本发明的精神和范围的情况下，可进行各种修改。例如，尽管上文描述由钴或镍膜层形成金属硅化物层，但在一些实施方式中可使用其他材料。例如，其他材料可包括钛、钽、钨、钼、铂、铁、铌、钯及其组合，以及其他合金，包括镍钴合金、钴钨合金、钴镍钨合金、掺杂的钴和镍合金、或镍铁合金，以形成如本文所描述的金属硅化物材料。
尽管上文是在退火或沉积系统的背景内容中进行描述的，但根据所提供的气体，高压腔室可用于蚀刻系统。或者，高压腔室可被填充惰性气体，且高压腔室可被单纯用于在高压下进行热处理。本文所描述的处理平台可包括其他类型的处理腔室。例如，处理平台可包括蚀刻腔室，以将图案蚀刻到基板表面上。
处理平台的不同腔室的每一者可具有不同的压力环境，范围从接近真空到多于50个大气压。腔室之间的隔离阀(例如真空阀)可隔离彼此的压力，使得每一腔室内可维持这些不同的压力环境。
因此，其他实施方式落在以下权利要求的范围内。

Claims (17)

1.一种用于处理基板上的层的高压处理系统，所述高压处理系统包括：
第一腔室；
第二腔室，所述第二腔室邻近所述第一腔室；
阀组件，所述阀组件位于所述第一腔室与所述第二腔室之间并且经配置以将所述第一腔室与所述第二腔室隔离；
气体输送系统，所述气体输送系统经配置以：
在所述第一腔室与所述第二腔室隔离的同时，将所述第一腔室加压至至少约10个大气压的第一压力；和
在所述第一腔室与所述第二腔室隔离的同时，将所述第一腔室加压至在大于约1个大气压且小于所述第一压力的范围内的第二压力；和
第一输送管线和第二输送管线，所述第一输送管线和所述第二输送管线将所述气体输送系统耦接至所述第一腔室，其中所述第一输送管线和所述第二输送管线进入所述第二腔室的第一侧并且流体连接至所述第一腔室。
2.如权利要求1所述的高压处理系统，进一步包括：
前级管道，所述前级管道经配置以从所述第二腔室移除气体，所述前级管道连接至所述第二腔室的与所述第一侧相对的第二侧。
3.如权利要求2所述的高压处理系统，进一步包括：
第一排气系统，所述第一排气系统包括排气线，并且所述第一排气系统经配置以从所述第一腔室移除气体，其中所述排气线经由所述第二腔室的所述第一侧连接至所述第一腔室。
4.如权利要求3所述的高压处理系统，其中所述气体输送系统包括第一气体输送模块和第二气体输送模块，并且其中所述高压处理系统进一步包括：
共同外壳，所述共同外壳围绕所述第一气体输送模块和所述第二气体输送模块；和
第二排气系统，所述第二排气系统经配置以从所述共同外壳引导气体至所述前级管道。
5.如权利要求4所述的高压处理系统，进一步包括：包封壳体，所述包封壳体经配置以将从所述第一输送管线和所述第二输送管线泄漏的气体转向至所述前级管道。
6.如权利要求1所述的高压处理系统，进一步包括：
控制器，所述控制器经配置以：
操作所述阀组件以将所述第一腔室与所述第二腔室隔离；
操作所述气体输送系统以将所述第一腔室加压至所述第一压力；和
操作所述气体输送系统以将所述第二腔室加压至所述第二压力。
7.如权利要求6所述的高压处理系统，其中所述控制器进一步经配置以：
使排气系统在所述第一腔室中产生第三压力，所述第三压力小于所述第一压力；
使真空处理系统在所述第二腔室中产生第四压力，所述第四压力小于所述第二压力；
比较来自所述第一腔室中的第一压力传感器与所述第二腔室中的第二压力传感器的测量结果；并
控制所述排气系统和所述真空处理系统以维持所述第三压力大于所述第四压力。
8.如权利要求1所述的高压处理系统，其中所述气体输送系统进一步经配置以：
将第一气体输送至所述第一腔室中；和
将第二气体输送至所述第二腔室中。
9.如权利要求8所述的高压处理系统，其中所述气体输送系统包括泵，所述泵经配置以在所述第一气体被输送至所述第一腔室之前，提升所述第一气体的压力。
10.一种处理基板上的层的方法，所述方法包括：
在第一腔室与邻近于所述第一腔室的第二腔室隔离的同时，通过气体输送系统将所述第一腔室加压至至少约10个大气压的第一压力，所述气体输送系统经由第一输送管线和第二输送管线耦接至所述第一腔室，其中所述第一输送管线和所述第二输送管线进入所述第二腔室的第一侧并且流体连接至所述第一腔室；和
在通过阀组件将所述第一腔室与所述第二腔室隔离的同时，通过所述气体输送系统将所述第一腔室加压至在大于约1个大气压且小于所述第一压力的范围内的第二压力，其中所述阀组件设置在所述第一腔室与所述第二腔室之间并且经配置以将所述第一腔室与所述第二腔室隔离。
11.如权利要求10所述的方法，进一步包括：经由前级管道从所述第二腔室移除气体，所述前级管道连接至所述第二腔室的与所述第一侧相对的第二侧。
12.如权利要求11所述的方法，进一步包括：经由第一排气系统从所述第一腔室移除气体，所述第一排气系统包括排气线，所述排气线经由所述第二腔室的所述第一侧连接至所述第一腔室。
13.如权利要求12所述的方法，进一步包括：经由第二排气系统从共同外壳引导气体至所述前级管道，所述共同外壳围绕所述气体输送系统的第一气体输送模块和第二气体输送模块。
14.如权利要求13所述的方法，进一步包括：经由包封壳体将从所述第一输送管线和所述第二输送管线泄漏的气体转向至所述前级管道。
15.如权利要求10所述的方法，进一步包括：
经由排气系统在所述第一腔室中产生第三压力，所述第三压力小于所述第一压力；
经由真空处理系统在所述第二腔室中产生第四压力，所述第四压力小于所述第二压力；
比较来自所述第一腔室中的第一压力传感器与所述第二腔室中的第二压力传感器的测量结果；并
基于所述测量结果的比较，维持所述第三压力大于所述第四压力。
16.如权利要求10所述的方法，进一步包括：
经由所述气体输送系统将第一气体输送至所述第一腔室中；和
经由所述气体输送系统将第二气体输送至所述第二腔室中。
17.如权利要求16所述的方法，进一步包括：在所述第一气体被输送至所述第一腔室之前，经由所述气体输送系统的泵提升所述第一气体的压力。
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