JP4564570B2 - 原子層堆積装置 - Google Patents
原子層堆積装置 Download PDFInfo
- Publication number
- JP4564570B2 JP4564570B2 JP2009056620A JP2009056620A JP4564570B2 JP 4564570 B2 JP4564570 B2 JP 4564570B2 JP 2009056620 A JP2009056620 A JP 2009056620A JP 2009056620 A JP2009056620 A JP 2009056620A JP 4564570 B2 JP4564570 B2 JP 4564570B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- internal space
- substrate
- opening
- atomic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Description
本発明は、従来に比べて、より均一な膜質の薄膜を基板上に成膜する原子層堆積装置を提供することを目的とする。
原子層堆積装置10は、TMA(Tri-Methyl-Aluminium)等の原料ガスと、オゾンO3等の酸化ガスを交互に供給して、原子単位で堆積して薄膜を形成する装置である。
図1は、基板12上に薄膜を形成する原子層堆積装置(以降、ALD装置という)10の概略の装置構成を示す断面図である。
以下、これらの構成について、より詳細に説明する。
第1の容器20は、SUS等の金属材料で構成されている。第1の容器20の上壁には、N2ガス(あるいは不活性ガス)を第1の内部空間22に導入するガス導入口が設けられている。また、第1の容器20の側壁には、排気管38が接続される排気口が設けられており、ターボ分子ポンプなどの排気部39により、第1の内部空間22内のガスは、第1の容器20の外部に排気される。これにより、第1の内部空間22内は、導入されたN2ガスの雰囲気で、所定の圧力に維持される。第1の内部空間22を所定の圧力に減圧することにより、後述するヒータ24、25が酸化するのを抑制することができる。また、第1の容器20の側壁には、後述する押え部材60、ガス導入管64がそれぞれ貫通する貫通孔が設けられている。
図2(a)は、第2の容器40の概略構成図である。
第2の容器40は、第1の容器20の内部に設けられ、第2の内部空間42を形成する筒形状の容器である。第2の容器40は、安定した材質の点から石英が好適に用いられる。基板12をガラス基板とした場合、材料自体が略同じであるため、基板12に異なる成分が付着する心配がないという利点がある。
また、第2の容器40には、容器を保護するための保護キャップ54が設けられている。
図3(a)は、押え部材60の一例の構成を示す断面図である。図3(b)は、図3(a)に示す押え部材60の右側面図である。
図4は、ALD装置10の第1の容器20の上側部分32と下側部分30とを分離した状態を示す断面図である。
12 基板
20 第1の容器
22 第1の内部空間
24,25 ヒータ
26 側壁部
27 シャッタ
28 底部
29 Oリング
30 下側部分
32 上側部分
34 支持機構
35 移動機構
36 昇降機構
38 排気管
39 排気部
40 第2の容器
42 第2の内部空間
44,44a,44b 第1の開口
45a,45b Oリング
46 第2の開口
47 基板支持部
50 排気管
51 排気部
52 防着板
54 保護キャップ
60 押え部材
62,62a,62b ガス供給口
64,64a,64b ガス導入管
70 フォーク部
Claims (4)
- 基板上に薄膜を形成する原子層堆積装置であって、
第1の内部空間を形成する第1の容器と、
前記第1の容器の内部に設けられ、第2の内部空間を形成する筒形状の容器であって、該第2の内部空間内に向けて、基板上に薄膜を形成する原料ガスが流れる第1の開口を筒形状の一端に備え、前記第2の内部空間内のガスが該第2の内部空間外に流れる第2の開口を筒形状の他端に備え、筒形状の長手方向に移動可能な第2の容器と、
前記原料ガスを、前記第1の開口を通して前記第2の内部空間に供給するガス供給口を備え、かつ、前記長手方向に該第2の容器を押える押え部材と、を備え、
前記押え部材が前記長手方向に前記第2の容器を押えることにより、前記押え部材が前記第1の開口の縁と当接し、かつ、前記第2の開口の縁が前記第1の容器と当接し、前記第1の内部空間に対して前記第2の内部空間を隔てることを特徴とする原子層堆積装置。 - 前記第2の容器は、基板を載置するための基板支持部を備え、該基板支持部の前記第2の開口側は、基板を搬入及び搬出する搬送台車の基板載置先端のフォーク部に対応した櫛歯状である、請求項1に記載の原子層堆積装置。
- 前記第2の容器は、前記長手方向が水平方向となるように設けられ、前記第2の内部空間への前記原料ガスの供給は、前記基板支持部が設けられる高さ方向の位置よりも鉛直上方の位置で行われ、
前記押え部材は、前記第1の開口と対向する高さ方向の位置に前記ガス供給口を備える、請求項2に記載の原子層堆積装置。 - 前記第1の容器は、該第1の容器の底部を含む下側部分と、該下側部分以外の上側部分とに分離可能に構成され、
前記第2の容器は、前記第1の容器の底部から延びる支持機構を用いて支持され、
前記第1の容器の底部は、該第1の容器の前記上側部分に対して分離可能に上下方向に移動し、前記下側部分は下降して前記上側部分から分離することにより、前記第2の容器は前記第1の容器から取り外されるように構成されている、請求項1乃至3のいずれかに記載の原子層堆積装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009056620A JP4564570B2 (ja) | 2009-03-10 | 2009-03-10 | 原子層堆積装置 |
US13/203,381 US9194043B2 (en) | 2009-03-10 | 2010-02-15 | Atomic layer deposition apparatus |
KR1020117023446A KR101305298B1 (ko) | 2009-03-10 | 2010-02-15 | 원자층 퇴적 장치 |
EP10750491.2A EP2408002A4 (en) | 2009-03-10 | 2010-02-15 | APPARATUS FOR DEPOSITION OF ATOMIC LAYERS |
PCT/JP2010/000911 WO2010103732A1 (ja) | 2009-03-10 | 2010-02-15 | 原子層堆積装置 |
TW099106344A TWI461569B (zh) | 2009-03-10 | 2010-03-04 | Atomic layer deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009056620A JP4564570B2 (ja) | 2009-03-10 | 2009-03-10 | 原子層堆積装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010212433A JP2010212433A (ja) | 2010-09-24 |
JP4564570B2 true JP4564570B2 (ja) | 2010-10-20 |
Family
ID=42728031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009056620A Expired - Fee Related JP4564570B2 (ja) | 2009-03-10 | 2009-03-10 | 原子層堆積装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9194043B2 (ja) |
EP (1) | EP2408002A4 (ja) |
JP (1) | JP4564570B2 (ja) |
KR (1) | KR101305298B1 (ja) |
TW (1) | TWI461569B (ja) |
WO (1) | WO2010103732A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4523661B1 (ja) * | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
JP4564570B2 (ja) * | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
WO2011151041A1 (en) * | 2010-06-04 | 2011-12-08 | Oc Oerlikon Balzers Ag | Vacuum processing device |
JP2012126977A (ja) * | 2010-12-16 | 2012-07-05 | Ulvac Japan Ltd | 真空成膜装置及び成膜方法 |
JP5750281B2 (ja) * | 2011-03-07 | 2015-07-15 | 株式会社アルバック | 真空一貫基板処理装置及び成膜方法 |
JP2012184482A (ja) * | 2011-03-07 | 2012-09-27 | Ulvac Japan Ltd | 真空成膜装置及び成膜方法 |
JP5843627B2 (ja) * | 2012-01-20 | 2016-01-13 | 東京エレクトロン株式会社 | ガス供給ヘッド及び基板処理装置 |
JP5843626B2 (ja) * | 2012-01-20 | 2016-01-13 | 東京エレクトロン株式会社 | ガス供給ヘッド及び基板処理装置 |
JP6029452B2 (ja) * | 2012-02-22 | 2016-11-24 | 東京エレクトロン株式会社 | 基板処理装置 |
KR102127715B1 (ko) * | 2013-08-09 | 2020-06-29 | 에스케이실트론 주식회사 | 에피텍셜 반응기 |
JP6054471B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置および原子層成長装置排気部 |
JP6050860B1 (ja) * | 2015-05-26 | 2016-12-21 | 株式会社日本製鋼所 | プラズマ原子層成長装置 |
JP5990626B1 (ja) | 2015-05-26 | 2016-09-14 | 株式会社日本製鋼所 | 原子層成長装置 |
JP6054470B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置 |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
CN111095513B (zh) | 2017-08-18 | 2023-10-31 | 应用材料公司 | 高压高温退火腔室 |
JP7274461B2 (ja) | 2017-09-12 | 2023-05-16 | アプライド マテリアルズ インコーポレイテッド | 保護バリア層を使用して半導体構造を製造する装置および方法 |
CN117936420A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧処理システムのためのコンデンサシステム |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
JP2022507390A (ja) | 2018-11-16 | 2022-01-18 | アプライド マテリアルズ インコーポレイテッド | 強化拡散プロセスを使用する膜の堆積 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
CN112853316B (zh) * | 2020-12-31 | 2023-03-14 | 拓荆科技股份有限公司 | 镀膜装置及其承载座 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01289254A (ja) * | 1988-05-17 | 1989-11-21 | Tel Sagami Ltd | 熱処理装置 |
JPH08162415A (ja) * | 1994-12-05 | 1996-06-21 | Hitachi Ltd | Cvd装置 |
JP2006176838A (ja) * | 2004-12-22 | 2006-07-06 | Mitsui Eng & Shipbuild Co Ltd | 原子層成膜装置 |
JP2007239103A (ja) * | 2006-03-08 | 2007-09-20 | Tokyo Electron Ltd | 処理システムのためのシーリングのデバイスおよび方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
JP2654996B2 (ja) * | 1988-08-17 | 1997-09-17 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US5096536A (en) * | 1990-06-12 | 1992-03-17 | Micron Technology, Inc. | Method and apparatus useful in the plasma etching of semiconductor materials |
JPH0574757A (ja) * | 1991-09-13 | 1993-03-26 | Nec Yamagata Ltd | 半導体装置用高圧酸化炉 |
JPH0891988A (ja) * | 1994-09-27 | 1996-04-09 | Mitsubishi Heavy Ind Ltd | マイクロ波プラズマ化学蒸着装置 |
US5928427A (en) * | 1994-12-16 | 1999-07-27 | Hwang; Chul-Ju | Apparatus for low pressure chemical vapor deposition |
US5782980A (en) * | 1996-05-14 | 1998-07-21 | Advanced Micro Devices, Inc. | Low pressure chemical vapor deposition apparatus including a process gas heating subsystem |
US5728602A (en) * | 1996-06-03 | 1998-03-17 | Vlsi Technology, Inc. | Semiconductor wafer manufacturing process with high-flow-rate low-pressure purge cycles |
TW336333B (en) * | 1996-06-24 | 1998-07-11 | Nat Denki Kk | A substrate processing apparatus |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US6240875B1 (en) * | 1999-07-07 | 2001-06-05 | Asm International N.V. | Vertical oven with a boat for the uniform treatment of wafers |
JP2001168030A (ja) | 1999-12-08 | 2001-06-22 | Japan Science & Technology Corp | 薄膜形成方法及び薄膜堆積装置 |
US6461436B1 (en) * | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
TWI249589B (en) * | 2004-07-16 | 2006-02-21 | Promos Technologies Inc | Method for improving atomic layer deposition process and the device thereof |
TWI268265B (en) * | 2004-08-13 | 2006-12-11 | Au Optronics Corp | Glass substrate cassette |
JP4676366B2 (ja) | 2005-03-29 | 2011-04-27 | 三井造船株式会社 | 成膜装置 |
JP4671841B2 (ja) | 2005-11-09 | 2011-04-20 | パナソニック株式会社 | 対象物間の脱ガス方法および脱ガス装置 |
US20070187386A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
JP5347214B2 (ja) * | 2006-06-12 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP5031611B2 (ja) * | 2008-02-18 | 2012-09-19 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び天井断熱体 |
JP4564570B2 (ja) * | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
-
2009
- 2009-03-10 JP JP2009056620A patent/JP4564570B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-15 KR KR1020117023446A patent/KR101305298B1/ko not_active IP Right Cessation
- 2010-02-15 US US13/203,381 patent/US9194043B2/en not_active Expired - Fee Related
- 2010-02-15 EP EP10750491.2A patent/EP2408002A4/en not_active Withdrawn
- 2010-02-15 WO PCT/JP2010/000911 patent/WO2010103732A1/ja active Application Filing
- 2010-03-04 TW TW099106344A patent/TWI461569B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01289254A (ja) * | 1988-05-17 | 1989-11-21 | Tel Sagami Ltd | 熱処理装置 |
JPH08162415A (ja) * | 1994-12-05 | 1996-06-21 | Hitachi Ltd | Cvd装置 |
JP2006176838A (ja) * | 2004-12-22 | 2006-07-06 | Mitsui Eng & Shipbuild Co Ltd | 原子層成膜装置 |
JP2007239103A (ja) * | 2006-03-08 | 2007-09-20 | Tokyo Electron Ltd | 処理システムのためのシーリングのデバイスおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110303147A1 (en) | 2011-12-15 |
KR20110131268A (ko) | 2011-12-06 |
JP2010212433A (ja) | 2010-09-24 |
WO2010103732A1 (ja) | 2010-09-16 |
EP2408002A1 (en) | 2012-01-18 |
TWI461569B (zh) | 2014-11-21 |
KR101305298B1 (ko) | 2013-09-06 |
TW201040311A (en) | 2010-11-16 |
EP2408002A4 (en) | 2014-05-14 |
US9194043B2 (en) | 2015-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4564570B2 (ja) | 原子層堆積装置 | |
JP4523661B1 (ja) | 原子層堆積装置及び薄膜形成方法 | |
TWI412084B (zh) | A substrate processing apparatus and a substrate processing method | |
KR101132231B1 (ko) | 기판 처리 장치 | |
KR101606617B1 (ko) | 성막 방법 및 성막 장치 | |
CN109671611B (zh) | 半导体器件的制造方法、衬底处理装置及记录介质 | |
KR20120024384A (ko) | 성막 방법 및 성막 장치 | |
CN112424915A (zh) | 半导体器件的制造方法、衬底处理装置及程序 | |
JP2016207719A (ja) | 縦型熱処理装置 | |
JP2011195863A (ja) | 原子層堆積装置及び原子層堆積方法 | |
JP2006351582A (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP5021688B2 (ja) | 原子層成長装置 | |
JP5438266B2 (ja) | 半導体装置の製造方法、クリーニング方法および基板処理装置 | |
JP2010219561A (ja) | 基板処理装置及び半導体デバイスの製造方法 | |
JP4918109B2 (ja) | 原子層成長装置 | |
JP5571157B2 (ja) | 半導体装置の製造方法、クリーニング方法および基板処理装置 | |
KR20180110601A (ko) | 성막 방법 및 종형 열처리 장치 | |
JP2006066557A (ja) | 基板処理装置 | |
JP4415005B2 (ja) | 基板処理装置 | |
JP5204809B2 (ja) | 基板処理装置、基板処理方法及び半導体デバイスの製造方法 | |
JP2005064538A (ja) | 基板処理装置及び半導体デバイスの製造方法 | |
JP2005197541A (ja) | 基板処理装置 | |
KR20050103996A (ko) | 기판의 예열 단계를 포함하는 박막 형성 방법 및 그방법에 사용되는 박막 형성 반응 시스템 | |
JP2009173963A (ja) | 薄膜形成装置 | |
JP2007207974A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20100423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100713 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100730 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140806 Year of fee payment: 4 |
|
LAPS | Cancellation because of no payment of annual fees |