JP7112490B2 - 高圧処理チャンバのためのガス供給システム - Google Patents
高圧処理チャンバのためのガス供給システム Download PDFInfo
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Description
また、本願は以下に記載する態様を含む。
(態様1)
基板上の層を処理するための高圧処理システムであって、
第1のチャンバと、
前記第1のチャンバに前記基板を保持する支持体と、
前記第1のチャンバに隣接する第2のチャンバと、
前記第2のチャンバからガスを除去するフォアラインと、
前記第2のチャンバ内の圧力を真空近くまで下げるように構成された真空処理システムと、
前記第1のチャンバ内の前記圧力を前記第2のチャンバ内の前記圧力から分離するための、前記第1のチャンバと前記第2のチャンバとの間のバルブアセンブリと、
前記第1のチャンバに一又は複数のガスを導入し、前記ガスが前記第1のチャンバ内にあって、前記第1のチャンバが前記第2のチャンバから分離されている間に、前記第1のチャンバ内の前記圧力を少なくとも10気圧まで高めるように構成されているガス供給システムであって、
第1のガスを少なくとも10気圧である第1の圧力で供給する第1のガス供給モジュール、及び、
前記第1のガス又は異なる組成の第2のガスを、前記第1の圧力未満であるが1気圧を超える第2の圧力で供給する第2のガス供給モジュール
を含むガス供給システムと、
前記ガス供給システムと前記バルブアセンブリとを操作するように構成されたコントローラと、
前記第1のチャンバからガスを除去する排気ラインを備える排気システムと、
前記第1のガス供給モジュールと前記第2のガス供給モジュールとを共に取り囲む共通ハウジングと、
を備える高圧処理システム。
(態様2)
前記共通ハウジングからガスを除去するように構成された第2の排気システムを備える、態様1に記載のシステム。
(態様3)
前記第2の排気システムは、前記ハウジングから前記フォアラインまでガスを導くように構成される、態様2に記載のシステム。
(態様4)
前記第1及び第2のガス供給モジュールを前記第1のチャンバに連結する第1及び第2の供給ラインと、前記第1及び第2の供給ラインから漏れるガスを前記フォアラインまで迂回させるように構成された密封容器筐体とを備える、態様1に記載のシステム。
(態様5)
前記共通ハウジングは、前記密封容器筐体から流体的に分離されている、態様4に記載のシステム。
(態様6)
基板上の層を処理するための高圧処理システムであって、
第1のチャンバと、
前記第1のチャンバに前記基板を保持する支持体と、
前記第1のチャンバに隣接する第2のチャンバと、
前記第2のチャンバからガスを除去するフォアラインと、
前記第2のチャンバ内の圧力を真空近くまで下げるように構成された真空処理システムと、
前記第1のチャンバ内の前記圧力を前記第2のチャンバ内の前記圧力から分離するための、前記第1のチャンバと前記第2のチャンバとの間のバルブアセンブリと、
前記第1のチャンバに一又は複数のガスを導入し、前記ガスが前記第1のチャンバ内にあって、前記第1のチャンバが前記第2のチャンバから分離されている間に、前記第1のチャンバ内の前記圧力を少なくとも10気圧まで高めるように構成されているガス供給システムであって、
第1のガスを少なくとも10気圧である第1の圧力で供給する第1のガス供給モジュール、及び、
前記第1のガス又は異なる組成の第2のガスを、前記第1の圧力未満であるが1気圧を超える第2の圧力で供給する第2のガス供給モジュール
を含むガス供給システムと、
前記第1のチャンバからガスを除去する排気ラインを備える排気システムと、
前記バルブアセンブリは前記第1のチャンバを前記第2のチャンバから分離し、次に、前記第2のガス供給モジュールは前記第1のチャンバを1気圧未満の圧力から前記第2の圧力まで高め、次に、前記第2のガス供給モジュールは前記第1のチャンバから分離され、次に、前記第1のガス供給モジュールは第1のチャンバを前記第2の圧力から前記第1の圧力まで高めるように、前記ガス供給システム、バルブアセンブリ、真空処理システム及び排気処理システムを操作するように構成されたコントローラと、
を備える高圧処理システム。
(態様7)
前記第1のガス供給モジュールは、前記第1のガスを前記第1のチャンバに供給する前に、前記第1のガスの圧力を高めるように構成されたポンプを備える、態様6に記載のシステム。
(態様8)
前記第2のガス供給モジュールは、前記ガスを前記第1のチャンバに導くために、質量流量コントローラ、液体流量計、又は液体流量コントローラを使用する、態様7に記載のシステム。
(態様9)
前記第1のチャンバ内の第1の圧力センサと、前記第2のチャンバ内の第2の圧力センサとを備える、態様6に記載のシステム。
(態様10)
前記コントローラは、前記排気システムが前記第1のチャンバ内の圧力を下げ、前記真空処理システムが前記第2のチャンバ内の圧力を下げるように構成され、また、前記コントローラは、前記第1の圧力センサ及び前記第2の圧力センサからの測定値を比較し、前記第1のチャンバ内の圧力が前記第2のチャンバ内の圧力よりも高くなるように、前記排気システム及び前記真空処理システムを制御するように構成される、態様9に記載のシステム。
(態様11)
高圧処理システムの操作方法であって、
第1のチャンバと第2のチャンバとを1気圧未満である第1の圧力にすることと、
前記第1のチャンバと第2のチャンバの間の分離バルブが開いている間に、前記第2のチャンバから前記第1のチャンバへ基板を移送することと、
前記分離バルブが閉じられている間に、前記第1のチャンバを前記第1の圧力から第2の圧力に下げ、第2のチャンバを第1の圧力から第3の圧力に下げることと、
第2のガス供給モジュールを用いて第1のチャンバを大気圧より高く10気圧未満である第4の圧力に加圧することと、
第1のガス供給モジュールを用いて第1のチャンバを10気圧超の第5の圧力まで加圧することと、
前記第1のチャンバが前記第5の圧力にある間に、前記基板を処理することと、
第1のチャンバを排気することと、
前記分離バルブを開いて前記第1のチャンバから前記基板を取り出すことと、
を含む操作方法。
(態様12)
前記第1のチャンバを前記第5の圧力に加圧することは、第1のガスを前記第1のチャンバに供給することを含み、前記第1のチャンバを前記第4の圧力に加圧することは、異なる組成の第2のガスを前記第1のチャンバに供給することを含む、態様11に記載の方法。
(態様13)
前記第1のガスは、H 2 又はNH 3 のうちの少なくとも1つを含む、態様11に記載の方法。
(態様14)
前記第2のガス供給モジュールを用いて前記第1のチャンバを加圧することは、前記第1のガス供給モジュールと前記第1のチャンバとの間の供給ラインにおいて、前記第1のガス供給モジュールを高圧分離バルブで前記第1のチャンバから分離することと、前記第2のガス供給モジュールと前記第1のチャンバとの間の供給ラインにおいて低圧分離バルブを開くことによって、前記第2のガス供給モジュールと前記第1のチャンバとを流体的に連結することとを含む、態様11に記載の方法。
(態様15)
前記第1のガス供給モジュールを用いて前記第1のチャンバを加圧することは、前記低圧分離バルブを用いて前記第2のガス供給モジュールを前記第1のチャンバから分離することと、前記高圧分離バルブを開くことによって前記第1のガス供給モジュールと前記第1のチャンバとを流体的に連結することとを含む、態様14に記載の方法。
Claims (10)
- 基板上の層を処理するための高圧処理システムであって、
第1のチャンバと、
前記第1のチャンバに前記基板を保持する支持体と、
前記第1のチャンバに隣接し、エッチング、堆積または1気圧未満の圧力での処理をするように構成された第2のチャンバと、
前記第2のチャンバからガスを除去するフォアラインと、
前記第2のチャンバ内の圧力を真空近くまで下げるように構成された真空処理システムと、
前記第1のチャンバ内の前記圧力を前記第2のチャンバ内の前記圧力から分離するための、前記第1のチャンバと前記第2のチャンバとの間のバルブアセンブリと、
前記第1のチャンバに一又は複数のガスを導入し、前記ガスが前記第1のチャンバ内にあって、前記第1のチャンバが前記第2のチャンバから分離されている間に、前記第1のチャンバ内の前記圧力を少なくとも10気圧まで高めるように構成されているガス供給システムであって、
第1のガスを少なくとも10気圧である第1の圧力で供給する第1のガス供給モジュール、及び、
前記第1のガス又は異なる組成の第2のガスを、前記第1の圧力未満であるが1気圧を超える第2の圧力で供給する第2のガス供給モジュール
を含むガス供給システムと、
前記ガス供給システムと前記バルブアセンブリとを操作するように構成されたコントローラと、
前記第1のチャンバからガスを除去する排気ラインを備える排気システムと、
前記第1のガス供給モジュールと前記第2のガス供給モジュールとを共に取り囲む共通ハウジングと、
を備える高圧処理システム。 - 前記共通ハウジングからガスを除去するように構成された第2の排気システムを備える、請求項1に記載のシステム。
- 前記第2の排気システムは、前記ハウジングから前記フォアラインまでガスを導くように構成される、請求項2に記載のシステム。
- 前記第1及び第2のガス供給モジュールを前記第1のチャンバに連結する第1及び第2の供給ラインと、前記第1及び第2の供給ラインから漏れるガスを前記フォアラインまで迂回させるように構成された密封容器筐体とを備える、請求項1に記載のシステム。
- 前記共通ハウジングは、前記密封容器筐体から流体的に分離されている、請求項4に記載のシステム。
- 基板上の層を処理するための高圧処理システムであって、
第1のチャンバと、
前記第1のチャンバに前記基板を保持する支持体と、
前記第1のチャンバに隣接し、エッチング、堆積または1気圧未満の圧力での処理をするように構成された第2のチャンバと、
前記第2のチャンバからガスを除去するフォアラインと、
前記第2のチャンバ内の圧力を真空近くまで下げるように構成された真空処理システムと、
前記第1のチャンバ内の前記圧力を前記第2のチャンバ内の前記圧力から分離するための、前記第1のチャンバと前記第2のチャンバとの間のバルブアセンブリと、
前記第1のチャンバに一又は複数のガスを導入し、前記ガスが前記第1のチャンバ内にあって、前記第1のチャンバが前記第2のチャンバから分離されている間に、前記第1のチャンバ内の前記圧力を少なくとも10気圧まで高めるように構成されているガス供給システムであって、
第1のガスを少なくとも10気圧である第1の圧力で供給する第1のガス供給モジュール、及び、
前記第1のガス又は異なる組成の第2のガスを、前記第1の圧力未満であるが1気圧を超える第2の圧力で供給する第2のガス供給モジュール
を含むガス供給システムと、
前記第1のチャンバからガスを除去する排気ラインを備える排気システムと、
前記バルブアセンブリは前記第1のチャンバを前記第2のチャンバから分離し、次に、前記第2のガス供給モジュールは前記第1のチャンバを1気圧未満の圧力から前記第2の圧力まで高め、次に、前記第2のガス供給モジュールは前記第1のチャンバから分離され、次に、前記第1のガス供給モジュールは第1のチャンバを前記第2の圧力から前記第1の圧力まで高めるように、前記ガス供給システム、バルブアセンブリ、真空処理システム及び排気処理システムを操作するように構成されたコントローラと、
を備える高圧処理システム。 - 前記第1のガス供給モジュールは、前記第1のガスを前記第1のチャンバに供給する前に、前記第1のガスの圧力を高めるように構成されたポンプを備える、請求項6に記載のシステム。
- 前記第2のガス供給モジュールは、前記ガスを前記第1のチャンバに導くために、質量流量コントローラ、液体流量計、又は液体流量コントローラを使用する、請求項7に記載のシステム。
- 前記第1のチャンバ内の第1の圧力センサと、前記第2のチャンバ内の第2の圧力センサとを備える、請求項6に記載のシステム。
- 前記コントローラは、前記排気システムが前記第1のチャンバ内の圧力を下げ、前記真空処理システムが前記第2のチャンバ内の圧力を下げるように構成され、また、前記コントローラは、前記第1の圧力センサ及び前記第2の圧力センサからの測定値を比較し、前記第1のチャンバ内の圧力が前記第2のチャンバ内の圧力よりも高くなるように、前記排気システム及び前記真空処理システムを制御するように構成される、請求項9に記載のシステム。
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Publication number | Publication date |
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CN111357090B (zh) | 2024-01-05 |
KR102396319B1 (ko) | 2022-05-09 |
CN111357090A (zh) | 2020-06-30 |
US11527421B2 (en) | 2022-12-13 |
KR20200088381A (ko) | 2020-07-22 |
US10720341B2 (en) | 2020-07-21 |
SG11202003355QA (en) | 2020-05-28 |
TW201931496A (zh) | 2019-08-01 |
US20190148178A1 (en) | 2019-05-16 |
KR102585074B1 (ko) | 2023-10-04 |
US11756803B2 (en) | 2023-09-12 |
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JP2021502704A (ja) | 2021-01-28 |
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EP3707746A4 (en) | 2021-08-18 |
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US20230093374A1 (en) | 2023-03-23 |
EP4321649A2 (en) | 2024-02-14 |
KR20220065077A (ko) | 2022-05-19 |
US20200350183A1 (en) | 2020-11-05 |
EP3707746B1 (en) | 2023-12-27 |
KR20230144106A (ko) | 2023-10-13 |
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