JP2013517616A - 酸化物ライナを使用する流動可能な誘電体 - Google Patents
酸化物ライナを使用する流動可能な誘電体 Download PDFInfo
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- 230000009969 flowable effect Effects 0.000 title claims description 26
- 239000003989 dielectric material Substances 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000002243 precursor Substances 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 63
- 238000000151 deposition Methods 0.000 claims abstract description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 43
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 39
- 230000008021 deposition Effects 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 28
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- 229910017840 NH 3 Inorganic materials 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 17
- 238000002156 mixing Methods 0.000 abstract description 6
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- 230000008569 process Effects 0.000 description 25
- 229910052799 carbon Inorganic materials 0.000 description 14
- 150000003254 radicals Chemical class 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
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- 238000004590 computer program Methods 0.000 description 5
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 229910052734 helium Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000012686 silicon precursor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001227 electron beam curing Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- -1 H 2 N (SiH 3 ) Chemical class 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
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- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- RTKIYFITIVXBLE-QEQCGCAPSA-N trichostatin A Chemical compound ONC(=O)/C=C/C(/C)=C/[C@@H](C)C(=O)C1=CC=C(N(C)C)C=C1 RTKIYFITIVXBLE-QEQCGCAPSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Abstract
Description
本出願は、2010年12月21日に出願され、「FLOWABLE DIELECTRIC USING OXIDE LINER」と題する米国特許出願第12/974,495号のPCT出願であり、その開示全体が全ての目的のために参照により本明細書に組み込まれる、2010年、1月6日に出願され、「RADICAL COMPONENT DIELECTRIC USING OXIDE LINER」と題する米国仮特許出願第61/292,520号の利益を主張する。
図1は、本発明の実施形態による、酸化ケイ素膜を作る方法100で選択されたステップを示す流れ図である。方法100は、動作101で、TEOSおよびオゾン(O3)を同時に流すことで、基板上に酸化ケイ素ライナを堆積することを含む。本明細書に記載の他のライナの堆積と同様に、堆積期間の基板温度は、本発明の実施形態において、400°C超、500°C超および600°C超である。確実に、より流動可能にまたは滑らかに堆積する目的で、水(H2O、蒸気)、HMDSおよびTMDSOなどの添加物がTEOSおよびオゾン(O3)に加えられて良い。後に続くラジカル組成物の堆積と比較して、比較的高い基板温度によって、窒化ケイ素などの不活性な表面上の堆積を促進する。次いでライナは酸化ケイ素の表面を呈示し、酸化ケイ素の表面は不活性さが低く、比較的低い温度で堆積することにより貢献する。そのような堆積プロセスは、準常圧CVD(SACVD)として当技術分野で知られているが、1気圧を超える圧力でも行うことができる。TEOSの例示的な流量は、異なる実施形態において、0.1gm/分(グラム/分)超、0.5gm/分超、1gm/分超および3gm/分超であって良い。オゾンは、異なる実施形態において、1,000sccm超、3,000sccm超、10,000sccm超または30,000sccm超で流すことができる。比較的不活性なキャリアガスを使用して、TEOSおよび任意選択の添加物を基板に送達することができ、キャリアガスの質量は、上に示したgm/分デリバリ速度に含まれない。
本発明の実施形態を実現することのできる堆積チャンバとしては、チャンバの種類の中でもとりわけ、高密度プラズマ化学気相堆積(HDP−CVD)チャンバ、プラズマ化学気相堆積(PECVD)チャンバ、準常圧化学気相堆積(SACVD)チャンバ、および熱化学気相堆積チャンバを挙げることができる。本発明の実施形態を実現することができるCVDシステムの具体的な例としては、Santa Clara、Calif.のApplied Materials、Inc.から入手可能な、CENTURA ULTIMA(登録商標)HDP−CVDチャンバ/システム、およびPRODUCER(登録商標)PECVDチャンバ/システムが挙げられる。
Claims (18)
- 基板上に流動可能な誘電体層を形成する方法であって、連続したステップの、
基板をシリコン含有ライナ前駆体および酸素含有ライナ前駆体に曝すことにより、基板上に全体的に共形な酸化ケイ素ライナ層を形成するステップであって、基板がライナ堆積温度に維持されるステップと、
基板上に無炭素の流動可能なシリコン−窒素−水素含有層を形成するステップであって、基板がバルク堆積温度に維持されるステップと
を含む方法。 - 無炭素の流動可能なシリコン−窒素−水素含有層を形成するステップが、
窒素−水素含有ガスをプラズマ領域内に流し、ラジカル−窒素前駆体を生成するステップと、
無炭素シリコン含有前駆体をラジカル−窒素前駆体と無プラズマ基板処理領域内で化合させるステップと、
シリコン−窒素含有層を基板上に堆積するステップと
を含む、請求項1に記載の方法。 - 窒素−水素含有ガスがアンモニア(NH3)を含む、請求項2に記載の方法。
- 窒素−水素含有ガスが窒素(N2)、水素(H2)、ヒドラジン(N2H4)およびアンモニア(NH3)のうちの少なくとも1つを含む、請求項2に記載の方法。
- 全体的に共形な酸化ケイ素ライナの厚さが約100Å以下である、請求項1に記載の方法。
- 無炭素シリコン含有前駆体がN(SiH3)3を含む、請求項2に記載の方法。
- 無炭素の流動可能なシリコン−窒素−水素含有層が無炭素Si−N−H層を含む、請求項1に記載の方法。
- バルク堆積温度がライナ堆積温度よりも低い、請求項1に記載の方法。
- バルク堆積温度が120°C未満である、請求項1に記載の方法。
- ライナ堆積温度が400°Cより高い、請求項1に記載の方法。
- 基板の温度をオゾン含有雰囲気で約400°C以下に維持する硬化ステップをさらに含む、請求項1に記載の方法。
- 原子酸素、オゾン、および蒸気(H2O)からなる群から選択される1つまたは複数のガスを含む酸素含有雰囲気内で、基板の温度を約600°C以上の酸素アニール温度に上げる、後硬化ステップをさらに含む、請求項11に記載の方法。
- プラズマ領域が遠隔プラズマシステムの中である、請求項2に記載の方法。
- プラズマ領域が、シャワーヘッドによって無プラズマ基板処理領域から分離される、基板処理チャンバの仕切られた部分である、請求項2に記載の方法。
- 酸素含有ライナ前駆体がオゾンを含む、請求項1に記載の方法。
- 酸素含有ライナ前駆体が酸素(O2)を含む、請求項1に記載の方法。
- シリコン含有ライナ前駆体がTEOSを含む、請求項1に記載の方法。
- シリコン−窒素含有層を堆積する動作がスピンオン誘電体(SOD)層を堆積するステップを含む、請求項1に記載の方法。
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SG182336A1 (en) | 2012-08-30 |
KR20120102155A (ko) | 2012-09-17 |
TW201131652A (en) | 2011-09-16 |
KR101528832B1 (ko) | 2015-06-15 |
US20110165781A1 (en) | 2011-07-07 |
US8647992B2 (en) | 2014-02-11 |
WO2011084812A3 (en) | 2011-11-17 |
CN102754193A (zh) | 2012-10-24 |
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