JP5566845B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5566845B2 JP5566845B2 JP2010231742A JP2010231742A JP5566845B2 JP 5566845 B2 JP5566845 B2 JP 5566845B2 JP 2010231742 A JP2010231742 A JP 2010231742A JP 2010231742 A JP2010231742 A JP 2010231742A JP 5566845 B2 JP5566845 B2 JP 5566845B2
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- 239000004065 semiconductor Substances 0.000 title claims description 119
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- 238000003860 storage Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 46
- 150000004767 nitrides Chemical class 0.000 claims description 42
- 230000003647 oxidation Effects 0.000 claims description 42
- 238000007254 oxidation reaction Methods 0.000 claims description 42
- 238000005121 nitriding Methods 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 88
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 88
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 69
- 229910052814 silicon oxide Inorganic materials 0.000 description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 60
- 150000003254 radicals Chemical class 0.000 description 45
- 239000000758 substrate Substances 0.000 description 36
- 238000002955 isolation Methods 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000009751 slip forming Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- -1 oxygen radicals Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
図1〜図6は、第1の実施形態に係る半導体装置の製造方法を模式的に示した断面図である。
図8〜図13は、第2の実施形態に係る半導体装置の製造方法を模式的に示した断面図である。なお、基本的事項は第1の実施形態と同様であるため、第1の実施形態で述べた事項の説明は省略する。
図14〜図20は、第3の実施形態に係る半導体装置の製造方法を模式的に示した断面図である。なお、基本的事項は第1の実施形態と同様であるため、第1の実施形態で述べた事項の説明は省略する。
図21〜図27は、第4の実施形態に係る半導体装置の製造方法を模式的に示した断面図である。なお、基本的事項は第1の実施形態と同様であるため、第1の実施形態で述べた事項の説明は省略する。
12a…シリコン酸化膜 13…シリコン窒化膜
13a…シリコン窒化膜(電荷蓄積絶縁膜) 14…トンネル絶縁膜
15…ブロック絶縁膜 16…ゲート電極膜
21…シリコン膜
31…シリコン窒化膜 32…トンネル絶縁膜
32a…シリコン窒化膜(中間絶縁膜) 32b…シリコン酸化膜(下層絶縁膜)
32c…シリコン酸化膜(上層絶縁膜) 33…電荷蓄積絶縁膜
41…半導体領域 42…絶縁領域
42a…シリコン酸化膜 43…穴
44…シリコン窒化膜 45…ブロック絶縁膜
45a…シリコン窒化膜(中間絶縁膜) 45b…シリコン酸化膜(下層絶縁膜)
45c…シリコン酸化膜(上層絶縁膜) 46…電荷蓄積絶縁膜
47…トンネル絶縁膜 48…半導体活性領域
Claims (4)
- シリコンを主成分として含む半導体領域と、シリコン及び酸素を主成分として含み前記半導体領域に隣接する絶縁領域とを有する下地領域の表面を窒化して、窒化膜を形成する工程と、
前記窒化膜に対して酸化処理を施して、前記窒化膜の前記絶縁領域上に形成された部分を酸化膜に変換するとともに前記窒化膜の前記半導体領域上に形成された部分を電荷蓄積絶縁膜の少なくとも一部として残す工程と、
前記電荷蓄積絶縁膜上にブロック絶縁膜を形成する工程と、
前記ブロック絶縁膜上にゲート電極膜を形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記酸化処理を施す工程の後に、前記窒化膜の前記半導体領域上に形成された部分と前記半導体領域との間にトンネル絶縁膜を形成する工程をさらに備えた
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記窒化膜を形成する工程の前に、トンネル絶縁膜及び該トンネル絶縁膜上に形成された前記半導体領域を有する構造を形成する工程をさらに備えた
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - シリコンを主成分として含む半導体領域と、シリコン及び酸素を主成分として含み前記半導体領域に隣接する絶縁領域とを有する下地領域の表面を窒化して、窒化膜を形成する工程と、
前記窒化膜に対して酸化処理を施して、前記窒化膜の前記絶縁領域上に形成された部分を酸化膜に変換するとともに前記窒化膜の前記半導体領域上に形成された部分をトンネル絶縁膜の少なくとも一部として残す工程と、
前記トンネル絶縁膜上に電荷蓄積絶縁膜を形成する工程と、
前記電荷蓄積絶縁膜上にブロック絶縁膜を形成する工程と、
前記ブロック絶縁膜上にゲート電極膜を形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。
Priority Applications (2)
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JP2010231742A JP5566845B2 (ja) | 2010-10-14 | 2010-10-14 | 半導体装置の製造方法 |
US13/051,031 US8304352B2 (en) | 2010-10-14 | 2011-03-18 | Method of manufacturing a semiconductor device |
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JP2010231742A JP5566845B2 (ja) | 2010-10-14 | 2010-10-14 | 半導体装置の製造方法 |
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JP2012084808A JP2012084808A (ja) | 2012-04-26 |
JP5566845B2 true JP5566845B2 (ja) | 2014-08-06 |
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JP2010231742A Expired - Fee Related JP5566845B2 (ja) | 2010-10-14 | 2010-10-14 | 半導体装置の製造方法 |
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JP (1) | JP5566845B2 (ja) |
Cited By (1)
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---|---|---|---|---|
US9997535B2 (en) | 2016-03-18 | 2018-06-12 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing the same |
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US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US8449942B2 (en) * | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
JP2013516763A (ja) * | 2009-12-30 | 2013-05-13 | アプライド マテリアルズ インコーポレイテッド | フレキシブルな窒素/水素比を使用して生成されるラジカルを用いる誘電体膜成長 |
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JP3600326B2 (ja) * | 1994-09-29 | 2004-12-15 | 旺宏電子股▲ふん▼有限公司 | 不揮発性半導体メモリ装置およびその製造方法 |
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JP5489449B2 (ja) * | 2008-12-10 | 2014-05-14 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2011049215A (ja) | 2009-08-25 | 2011-03-10 | Toshiba Corp | 半導体装置の製造方法 |
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US9997535B2 (en) | 2016-03-18 | 2018-06-12 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing the same |
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