JP5177617B2 - 酸化シリコン薄膜形成装置 - Google Patents
酸化シリコン薄膜形成装置 Download PDFInfo
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- JP5177617B2 JP5177617B2 JP2006346861A JP2006346861A JP5177617B2 JP 5177617 B2 JP5177617 B2 JP 5177617B2 JP 2006346861 A JP2006346861 A JP 2006346861A JP 2006346861 A JP2006346861 A JP 2006346861A JP 5177617 B2 JP5177617 B2 JP 5177617B2
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- substrate
- thin film
- coating
- gas
- silicon oxide
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- 239000010409 thin film Substances 0.000 title claims description 183
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Description
2(−SiH2―NH−)+2O3 →2(−SiO2−)+2NH3+O2 (1)
(−SiH2―NH−)+2O →(−SiO2−)+NH3 (2)
3(−Si(CH3)2−O−)+8O3 →3(−SiO2−)+6CO2+9H2O (3)
(−Si(CH3)2―O−)+8O→(−SiO2−)+2CO2+3H2O (4)
また溶媒除去を行う目的で塗布膜にレーザーや各種エネルギー線を照射する方法も可能である。加温する際のケイ素化合物薄膜を設置する雰囲気は、大気圧雰囲気下で行うのが望ましい。また、このときの加熱溶媒除去に要する時間は特に限定されない。一般には、1秒以上180分以内であるが、好適には30秒から60分である。
20 紫外光ランプ
30 温度保持装置
40 塗布膜形成装置
50 基板前処理装置
60 塗布膜乾燥装置
70 反応ガス導入管
80 生成ガス排出管
90 ガス遮断カーテン
100 基板
Claims (7)
- 酸化シリコン薄膜形成装置であって、
基板表面にシラザン構造又はシロキサン構造を含むケイ素化合物から成る塗設膜を塗設するための塗設手段、ガス雰囲気制御手段、塗設面の上方に設けた紫外光源及び該基板又は該基板を支持する台の下方に設けられた基板温度保持装置を備え、
上記紫外光源と上記基板温度保持装置の間を上記基板が連続的に搬送されるための搬入部と搬出部を備えることを特徴とする酸化シリコン薄膜形成装置。 - 酸化シリコン薄膜形成装置であって、
基板表面にシラザン構造又はシロキサン構造を含むケイ素化合物から成る塗設膜を塗設するための塗設手段、ガス雰囲気制御手段、塗設面の上方に設けた紫外光源及び該基板又は該基板を支持する台の下方に設けられた基板温度保持装置を備え、
上記塗設膜中の原料を除く溶媒の一部又は全部を除去するための溶媒除去手段を有することを特徴とする酸化シリコン薄膜形成装置。 - 酸化シリコン薄膜形成装置であって、
基板表面にシラザン構造又はシロキサン構造を含むケイ素化合物から成る塗設膜を塗設するための塗設手段、ガス雰囲気制御手段、塗設面の上方に設けた紫外光源及び該基板又は該基板を支持する台の下方に設けられた基板温度保持装置を備え、
上記塗設手段の前段に、上記基板を洗浄、脱気又は表面に付着した不純物を除去するための洗浄手段を有することを特徴とする酸化シリコン薄膜形成装置。 - 酸化シリコン薄膜形成装置であって、
基板表面にシラザン構造又はシロキサン構造を含むケイ素化合物から成る塗設膜を塗設するための塗設手段、ガス雰囲気制御手段、塗設面の上方に設けた紫外光源及び該基板又は該基板を支持する台の下方に設けられた基板温度保持装置を備え、
制御されたガス雰囲気を発生させるためのガス導入口及びガス排出口を有し、上記ガス導入口及び上記ガス排出口は、上記基板の搬送方向に直交する平面上において、互いに対向して配置されていることを特徴とする酸化シリコン薄膜形成装置。 - 酸化シリコン薄膜形成装置であって、
基板表面にシラザン構造又はシロキサン構造を含むケイ素化合物から成る塗設膜を塗設するための塗設手段、ガス雰囲気制御手段、塗設面の上方に設けた紫外光源及び該基板又は該基板を支持する台の下方に設けられた基板温度保持装置を備え、
上記シラザン構造又はシロキサン構造を含むケイ素化合物から酸化シリコンに転化反応を行う工程室の機材搬入口及び機材搬出口にカーテン機構を設けたことを特徴とする酸化シリコン薄膜形成装置。 - 上記紫外光源と上記基板温度保持装置は、上記基板の搬送方向に直交する平面上において並列に配置されていることを特徴とする請求項1乃至5のいずれか1項に記載の酸化シリコン薄膜形成装置。
- 上記ガスは、酸素ガス、水素ガス、窒素ガス、オゾンガス、アンモニアガス、一酸化炭素ガス、二酸化炭素ガス、過酸化水素ガス、一酸化窒素ガス、二酸化窒素ガス、亜窒化酸素ガス及びアルゴンガスから選ばれた1種又は複数種であることを特徴とする請求項1乃至6のいずれか1項に記載の酸化シリコン薄膜形成装置。
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JP2006346861A JP5177617B2 (ja) | 2006-12-25 | 2006-12-25 | 酸化シリコン薄膜形成装置 |
US12/521,253 US20100140756A1 (en) | 2006-12-25 | 2007-12-04 | Apparatus for manufacturing silicon oxide thin film and method for forming the silicon oxide thin film |
PCT/JP2007/073400 WO2008078516A1 (ja) | 2006-12-25 | 2007-12-04 | 酸化シリコン薄膜の製造装置及び形成方法 |
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