TWI697050B - 使用保護阻障層製造半導體結構的設備及方法 - Google Patents

使用保護阻障層製造半導體結構的設備及方法 Download PDF

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TWI697050B
TWI697050B TW107132041A TW107132041A TWI697050B TW I697050 B TWI697050 B TW I697050B TW 107132041 A TW107132041 A TW 107132041A TW 107132041 A TW107132041 A TW 107132041A TW I697050 B TWI697050 B TW I697050B
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layer
chamber
annealing
substrate
silicon
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帕拉米特 曼納
亞伯希吉特巴蘇 馬禮克
寇迪斯 勒施基斯
史帝文 維哈佛貝可
江施施
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美商應用材料股份有限公司
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Abstract

提供形成包括含矽(Si)層或矽鍺(SiGe)層的半導體結構的方法。此方法包括在半導體結構上方沉積保護阻障(例如，襯墊)層，在襯墊層上方形成可流動介電層，及將可流動介電層暴露於高壓蒸汽。一種群集系統包括設置以形成半導體結構的第一沉積腔室、設置以執行襯墊沉積處理而形成襯墊層的第二沉積腔室、設置以在襯墊層上方形成可流動介電層的第三沉積腔室、設置以將可流動氧化物層暴露於高壓蒸汽的退火腔室。

Description

使用保護阻障層製造半導體結構的設備及方法
本發明的實施例大體上關於使用保護阻障(例如，襯墊)層製造半導體結構的方法及設備。
形成在半導體裝置中溝槽的寬度已經變窄使得溝槽深度對於溝槽寬度的深寬比變得高到足以使得以介電材料填充溝槽成為具挑戰性。在低溫下沉積並在高壓蒸汽下退火的可流動介電材料(諸如矽氧化物(SiOx ))可以優良的氧化物材料填充高深寬比溝槽，而不形成任何縫隙或孔洞。然而，暴露至蒸汽的任何下方材料(諸如矽(Si))會轉變為氧化物材料，影響下方層的品質。轉變的氧化物之厚度可為數埃(Å)。例如，當暴露於高壓蒸汽時，矽鍺(SiGe)材料會特別地易於氧化。
因此，本領域中有著對於解決上述問題的製造方法與設備的需求。
本發明的實施例大體上關於使用保護阻障(例如，襯墊)層製造半導體的方法及設備。
在一具體例中，提供一種處理基板的方法。此方法包括在基板上形成半導體結構，其中半導體結構包括含矽(Si)層或矽鍺(SiGe)層。此方法也包括執行襯墊沉積處理以在半導體結構上方形成襯墊層。此方法也包括執行可流動層沉積處理以在襯墊層上方沉積可流動層。此方法也包括藉由將可流動層的一表面暴露於高壓蒸汽執行退火處理，其中襯墊層防止在退火處理期間之下方含Si層或SiGe層的氧化，襯墊層的至少一部分藉由在退火處理期間的氧化而逐漸減少。
在另一具體例中，提供一種能處理基板的群集系統。此群集系統包括第一沉積腔室，設置以在基板上形成半導體結構，其中半導體結構包括含矽(Si)層或矽鍺(SiGe)層。第二沉積腔室設置以在半導體結構上方形成襯墊層。第三沉積腔室設置以在襯墊層上方形成可流動層。退火腔室設置以藉由將可流動氧化物層暴露於高壓蒸汽執行退火處理，其中襯墊層防止在退火處理期間之下方含Si層或SiGe層的氧化。襯墊層的至少一部分藉由在退火處理期間的氧化而逐漸減少。
本發明的實施例大體上關於使用保護阻障(例如，襯墊)層製造半導體結構的方法及設備。特別是，本文所述方法包括形成包括含矽(Si)層或矽鍺(SiGe)層的半導體結構、在半導體結構上方沉積襯墊層、在襯墊層上方形成可流動層、及將可流動層暴露於高壓蒸汽，其中襯墊層在退火處理期間防止下方含Si層或SiGe層的氧化，且襯墊層的至少一部分藉由在退火期間的氧化而逐漸減少。
圖1繪示顯示根據本發明的一具體例之用於在半導體結構上方形成可流動介電層的製造處理100。製造處理100可為半導體裝置(例如，包括平坦結構、鰭式場效電晶體(FinFET)結構或水平環繞式閘極(horizontal gate-all-around；hGAA)結構)的多操作製造處理的一部分。製造處理100的各操作可表現為程式碼的模組、區段、或部分，其包含一或多個可執行指令以實行特化邏輯功能。在某些實施例中，製造處理的操作可同時地發生、實質上同時地發生、或以不同於圖1所示的次序而發生。製造處理100的各操作與操作的組合可藉由特殊用途之硬體系統而實行，特殊用途之硬體系統執行特化功能或動作、或特殊用途之硬體與電腦指令的組合。
製造處理開始於操作102，其中半導體結構形成在基板上。半導體結構包括含矽材料的一或多層，諸如矽(Si)材料或含矽鍺(SiGe)材料。含Si層或SiGe層可磊晶地成長在基板的一表面上方。
基板可為能使材料沉積於其上的任何基板，諸如矽基板，例如矽(摻雜或未摻雜)、結晶矽、氧化矽、摻雜或未摻雜多晶矽、或類似物、鍺基板、矽鍺(SiGe)基板、III-V化合物基板，諸如砷化鎵基板、碳化矽(SiC)基板、圖案化或未圖案化之絕緣體上半導體(SOI)基板、碳摻雜氧化物、氮化矽、諸如液晶顯示器(LCD)的顯示器基板、電漿顯示器、電致發光(EL)燈顯示器、太陽能陣列、太陽能板、發光二極體(LED)基板、玻璃、藍寶石、或任何其他材料，諸如金屬、金屬合金、及其他導電材料。一或多個電子裝置，諸如各種N型金屬氧化物半導體(NMOS)及/或P型金屬氧化物半導體(PMOS)裝置，諸如電晶體、電容器、電阻器、二極體、光二極體、保險絲、及類似物可形成在基板中。料想基板不侷限於任何特定尺寸或形狀。例如，基板可為圓形基板，具有200 mm直徑、300 mm直徑、或其他直徑，諸如450 mm，等等。基板也可為任何多邊形、方形、矩形、曲形、或者非圓形工件。
在操作104，半導體基板被圖案化與蝕刻以在基板上形成特徵，諸如溝槽或間隙。例如，半導體基板可在微影系統中圖案化與在蝕刻腔室中蝕刻。在一具體例中，諸如極紫外光圖案化處理的光微影處理可用於處理半導體結構。在一具體例中，被蝕刻進半導體結構中的溝槽或間隙的深寬比為約1：1、約2：1、約3：1、約5：1、約10：1、約15：1、約20：1、約30：1、約50：1、約100：1、或更大。
在一具體例中，溝槽或間隙的深寬比在約10：1與約30：1之間，例如約15：1。用語「深寬比」指稱例如形成在基板中的溝槽或間隙之特定特徵的高度尺寸對於寬度尺寸的比例。
在操作106，保護阻障(例如，襯墊)層形成在半導體結構的側壁上，同時基板定位在沉積腔室中。在一具體例中，例如藉由化學氣相沉積、原子層沉積、或磊晶沉積而沉積襯墊層。在另一具體例中，襯墊層藉由合適處理形成(即，成長)，諸如熱氧化處理或熱氮化處理。襯墊層防止在可流動介電層沉積之沉積期間與退火處理期間之半導體結構或基板的下方層(例如，含Si層或SiGe層)的氧化。
在一具體例中，襯墊層可由氧化物材料、氮化物材料、或氮氧化物系材料所形成。例如，襯墊材料可為氧化矽(SiO2 )、氮化矽(Si3 N4 ，也簡稱SiN)、或矽氮氧化物(SiOx Ny )，諸如SiON或Si2 N2 O。在一具體例中，藉由使用沉積腔室之可流動化學氣相沉積(CVD)處理沉積氧化物材料。合適的沉積腔室可包括高密度電漿CVD腔室、電漿增強CVD腔室、次大氣壓CVD腔室、或類似物。可適用於形成可流動氧化物或氮化物層的合適設備的實例包括PRODUCER® 系統或ULTIMA HDP CVD® 系統，兩者可由加州聖克拉拉的應用材料公司取得。料想也可使用其他合適沉積腔室，包括那些來自其他製造者的腔室。
在操作108，可流動介電層形成在半導體結構的襯墊層上方。本發明的可流動介電層可包括任何介電層。在一具體例中，介電層是含矽層，其可包括但不限於SiC、SiO、SiCN、SiO2 、SiOC、SiOCN、SiON或SiN。在一實例中，為了形成可流動介電層，含矽前驅物、氧系自由基前驅物、及氮系自由基前驅物導入沉積腔室，以在基板上方形成可流動介電層。額外地或可替換地，可流動介電層可不含有可追蹤的量之碳(即，為無碳的或實質上無碳的)。
可流動介電層可沉積在基板的暴露表面上及進入形成於基板之中的溝槽或間隙中。介電層的可流動性會至少部分地係由於沉積層中的短鏈聚矽氮烷聚合物的存在。例如，沉積層可具有矽氮烷型，Si—NH—Si主幹(即，Si—N—H層)。容許短鏈聚合物的形成與可流動性的氮可源自於自由基前驅物或含矽前驅物。介電層的可流動性使得介電層能填充具有高深寬比的溝槽或間隙，而不在溝槽中創造孔隙。尤其是，可流動介電層以在溝槽的側壁上最少的沉積由下往上地填充溝槽。介電層的可流動性隨著可流動介電層的沉積進行而減少。介電層的可流動性在隨後的退火處理期間被移除。
在一具體例中，合適的含矽前驅物包括有機矽化合物，具有氧對矽原子的比例為約0至約6。合適的有機矽化合物可包括矽氧烷化合物、包括一或多個鹵素部分(例如，氟、氯、溴、或碘)的鹵化矽氧烷化合物，諸如四氯矽烷、二氯二乙氧基矽氧烷(dichlorodiethoxysiloxane)、氯三乙氧基矽氧烷(chlorotriethoxysiloxane)、六氯二矽氧烷(hexachlorodisiloxane)、及/或八氯三矽氧烷(octachlorotrisiloxane)、及氨基矽烷類，諸如三矽烷胺(trisilylamine；TSA)、六甲基二矽氮烷(hexamethyldisilazane；HMDS)、雜氮矽三環(silatrane)、四(二甲基氨基)矽烷(tetrakis(dimethylamino)silane)、雙(二乙基氨基)矽烷(bis(diethylamino)silane)、三(二甲氨基)氯矽烷(tris(dimethyl-amino)chlorosilane)、及甲基雜氮矽三環(methylsilatrane)。也可使用其他含矽前驅物，諸如矽烷、鹵化矽烷、有機矽烷、及前述物的任何組合。矽烷可包括甲矽烷(SiH4)及更高階的矽烷，帶有實驗式SixH(2x+2)，諸如乙矽烷(Si2 H6 )、三矽烷(Si3 H8 )、及四矽烷(Si4 H10 )、或其他更高階的矽烷，諸如聚氯矽烷(polychlorosilane)。
氧系自由基前驅物可包括氧自由基，其由以下物種形成：氧(O2 )、臭氧(O3 )、氮氧化合物，諸如NO、NO2 、或N2 O、氫氧化合物，諸如水或過氧化物、碳氧化合物，諸如一氧化碳或二氧化碳、與其他含氧前驅物、及前述物的任何組合。氧自由基可遠端地產生並與含矽前驅物導入。在導入沉積腔室之前，可活化氧系自由基前驅物，例如使用遠端電漿源，其可具有CCP(電容耦合電漿)或ICP(感應耦合電漿)組態。
氮系自由基前驅物可包括氮自由基，其由以下物種形成：氮(N2 )、一氧化二氮(N2 O)、一氧化氮(NO)、二氧化氮(NO2 )、氨(NH3 )、及前述物的任何組合。氮自由基可遠端地產生並與含矽前驅物及氧系自由基前驅物導入。在導入沉積腔室之前，可活化氮系自由基前驅物，例如使用遠端電漿源，其可具有CCP(電容耦合電漿)或ICP(感應耦合電漿)組態。
在某些實施例中，氧系自由基前驅物以第一容積流率流入沉積腔室而含矽前驅物以第二容積流率流入沉積腔室。在一具體例中，第一容積流率對第二容積流率的比率在約0.3：1與約0.9：1之間，諸如約0.5：1至約0.7：1之間，例如約0.6：1。
在某些實施例中，氮系自由基前驅物以第一容積流率流入沉積腔室而含矽前驅物以第二容積流率流入沉積腔室。在一具體例中，第一容積流率對第二容積流率的比率在約0.2：1與約0.8：1之間，諸如約0.4：1至約0.6：1之間，例如約0.5：1。
料想若使用含有氧與氮自由基兩者的自由基前驅物，則可省略氧系自由基前驅物或氮系自由基前驅物。
含矽前驅物、氧系自由基前驅物、及氮系自由基前驅物可流入沉積腔室並反應於溫度在攝氏約0度與約100度之間，例如攝氏約65度。在可流動介電層的形成期間，沉積腔室的壓力可維持在約0.1托與約10托之間，例如約0.5托與約6托之間。
在操作110，半導體結構在退火腔室中經受高壓退火處理。在退火處理之後，可流動介電層展現更高的密度、更佳的穩定性、及可耐受更高的溫度。在一具體例中，在退火處理之前可執行可選的固化處理。
在高壓退火處理110的期間，將退火氣體導入具有基板定位於其中的退火腔室。在一具體例中，退火氣體包括氧成分。退火氣體也可包括氫成分。在一具體例中，退火氣體包括蒸汽及/或蒸汽與氧的混合物的一者。在一具體例中，退火氣體進一步包括以下的一者：臭氧、氧、水蒸氣、重水、過氧化物、含氫氧化物化合物、氧同位素(14、15、16、17、18、等等)、及氧的非同位素及/或水。過氧化物可為氣態的過氧化氫。在某些具體例中，退火氣體是包含氫氧離子的氧化劑，諸如但不限於水蒸氣或蒸氣態(例如，蒸汽)的重水。
在一實例中，退火氣體是乾燥蒸汽或過熱蒸汽。乾燥蒸汽當進入退火腔室時會變成過熱蒸汽。在處理半導體基板的退火腔室的內部表面的溫度被維持以防止退火氣體的凝結。例如，暴露於退火氣體的退火腔室的表面的溫度維持在攝氏約200度與攝氏約600度之間。
在退火處理期間，退火腔室內退火氣體的壓力維持在約1巴與約60巴之間。例如，退火腔室內退火氣體的壓力維持在約2巴之上，諸如例如大於約10巴。在另一實例中，退火腔室內退火氣體維持在約10巴與約60巴之間的壓力，諸如約20巴與約50巴之間。退火處理110的處理時間(例如，持溫時間)可在約5分鐘與約120分鐘之間，諸如約30分鐘與90分鐘之間。
圖2A至2F繪示根據本發明的一具體例之在各製造操作執行之後的半導體結構的一部分的圖解剖面視圖。
圖2A繪示在複數層沉積在基板202上方之後的半導體結構200A的一部分的圖解剖面視圖。在一具體例中，基板202可為塊體半導體基板，其中基板包括半導體材料。塊體半導體基板可包含任何合適半導體材料及/或半導體材料的組合用於形成半導體結構。在一具體例中，基板202的半導體材料包含矽材料。在某些具體例中，基板202的半導體材料是摻雜材料，諸如n摻雜矽(n-Si)或p摻雜矽(p-Si)。
半導體結構200A包括複數層。在一具體例中，半導體結構200A包括第一層204、第二層206、及第三層208。第二層206可由至少一III-V材料所形成，諸如矽鍺(SiGe)材料。在一實例中，第二層206具有鍺含量為約10%與約50%之間，諸如約20%與約40%之間。第二層206的矽含量可為約50%與90%之間，諸如約60%與約80%之間。在一具體例中，使用磊晶化學氣相沉積處理沉積第二層206。
在一具體例中，第一層204由含矽材料所形成，而第三層208由二氧化矽所形成。在另一具體例中，當半導體結構200A由含SiGe材料所製造時，第一層204、第二層206及第三層208的每一者為含SiGe層。在又另一具體例中，第一層204與第三層208由任何合適材料所形成，取決於半導體結構的功能。
圖2B繪示半導體結構200B的一部分的圖解剖面視圖。繪示在圖2B中的半導體結構200B對應於在執行圖案化處理與蝕刻處理之後的繪示在圖2A中的半導體結構200A。半導體結構200B的邊緣已被蝕刻。因此，溝槽與間隙可形成在相鄰半導體結構之間，諸如半導體結構200B與相鄰半導體結構。
在一具體例中，諸如極紫外光圖案化處理的光微影處理可用於蝕刻半導體結構200A。在另一具體例中，可使用自對準雙重或四重圖案化處理以圖案化半導體結構200A。
用以蝕刻半導體結構200A的一範例蝕刻處理是反應性離子蝕刻(RIE)處理。料想可使用類似與其他蝕刻處理。在一具體例中，可執行RIE處理使用氯、溴、或氟系化學品以非等向地蝕刻半導體結構200A。
圖2C繪示半導體結構200C的一部分的圖解剖面視圖。半導體結構200C類似於圖2B中的半導體結構200B，但半導體結構200C包括經由襯墊沉積處理沉積在半導體結構200B上方的襯墊層210。襯墊層210可由矽氮化物(SiN)或矽氮氧化物(SiOx Ny )所形成，諸如SiON或Si2 N2 O。
在襯墊層210上執行退火處理，其將襯墊層210逐漸地轉變成氧化物。襯墊層210至氧化物的轉變速率取決於各種因素，諸如退火溫度、蒸汽壓力、可流動介電層的性質(例如，材料類型與厚度)、退火氧化劑的性質(例如，氧化劑類型與濃度)、及/或退火時間。襯墊層210的厚度在退火處理期間可改變。退火處理的性質會影響襯墊層210的厚度。例如，隨著退火溫度、蒸汽壓力、退火時間及/或可流動介電層厚度的增加，會增加襯墊層210的厚度。再者，隨著退火溫度、蒸汽壓力、退火時間、及/或可流動介電層厚度的減少，會減少襯墊層210的厚度。
若整個襯墊層210在退火處理之前完全地氧化，下方的第三層208與第二層206會開始氧化，造成第三層208與第二層206的縮減品質。因此，將沉積的襯墊層210的厚度被決定以在後續處理期間(諸如，可流動氧化物沉積處理與退火處理)提供下方的第三層208與第二層206對於氧化的足夠防護。另一方面，襯墊層210的厚度應薄到足以達到半導體積體電路的密度。
可基於留存在退火處理的結束處的襯墊210的厚度而決定襯墊層210的厚度。在一具體例中，襯墊層210的厚度可留存為零(0)或實質上接近於零(0)。在另一具體例中，留存的襯墊層210的厚度可在特定範圍中，例如，在約1Å與約30Å之間，取決於半導體積體電路的尺寸要求及/或效能要求，諸如功率消耗、操作速度、或密度。
在一具體例中，襯墊層201的起始寬度可在約5Å與約100Å之間，諸如約20Å與約30Å之間，例如，約25Å。料想襯墊層210可適用於在後續退火處理期間防止層204、206、208的氧化。因此，襯墊層210應沉積帶有一厚度，其在後續處理期間(諸如，可流動氧化物沉積處理及/或退火處理)提供下方的含Si層或SiGe層對於氧化的足夠保護。又，襯墊層210的厚度應決定為使得在後續處理之後的襯墊層210的厚度達到半導體積體電路的尺寸要求。在一具體例中，可基於如之後參照圖3所述的襯墊層210的完成厚度而決定襯墊層210的厚度。
圖2D繪示基板202與半導體結構200D的一部分的圖解剖面視圖。半導體結構200D是在介電材料層212沉積之後的繪示在圖2C的半導體結構200C。在一具體例中，介電材料層212是可流動介電層。可流動介電層由介電材料形成，諸如氧化矽材料。介電材料層212可使用高密度電漿CVD系統、電漿增強CVD系統、及/或次大氣壓CVD系統、等等的其他系統而形成。可適用於形成介電材料層212的CVD的實例包括ULTIMA HDP CVD® 系統及PRODUCER® ETERNA CVD® 系統，兩者可由加州聖克拉拉的應用材料公司取得。料想也可使用來自其他製造者的其他合適CVD系統。
圖2E與2F分別繪示半導體結構200E與200F的一部分的圖解剖面視圖。半導體結構200E與200F對應於在執行退火處理之後的圖2D所繪示的半導體結構200D。執行退火處理以將介電材料層212緻密成目標層的組成與品質。在退火處理期間，襯墊層210逐漸地轉變成氧化物。當發生襯墊層210的氧化時，襯墊層210的厚度與寬度減少。在一具體例中，一部分的襯墊層210維持在退火處理後，如圖2E所示。在另一具體例中，整個襯墊層210被氧化，如圖2F所示。
在一具體例中，退火處理包括乾燥蒸汽退火處理。蒸汽退火處理可執行在攝氏約200度與攝氏約600度之間，諸如攝氏約400度與攝氏約500度之間。蒸汽退火處理可執行持續約5分鐘與約120分鐘之間的時間量，例如，約100分鐘。在一具體例中，可執行乾式退火處理持續約60分鐘。
在另一具體例中，可使用溼式蒸汽退火處理與乾式退火處理兩者。在此具體例中，可在溼式蒸汽退火處理之後執行乾式退火處理。
圖3繪示根據本發明的一具體例的在執行退火處理之後帶有多個層沉積於上的半導體結構350、352、354、356、358、及360的剖面視圖。執行在半導體結構350、352、354、356、358、及360上的退火處理的結果可用於決定襯墊層的厚度，其在後續退火處理期間提供下方的含Si層或SiGe層對於氧化的足夠保護。
半導體結構350、352、及354繪示實行在攝氏400度的溫度、30巴的壓力、1小時的處理時間、及小於2.5的溼式蝕刻速率比率(WERR)的退火處理的結果。半導體結構350包括暴露於上述退火處理的SiO層302與SiGeOx層304。在退火處理之前，SiO層302具有約2400Å的厚度而SiGe層具有約1024Å的厚度。在退火處理之後，SiGe層轉變成SiGe氧化(SiGeOx)層304。
半導體結構352包括安置在帶有約100Å厚度的氮化矽(SiN)層308之上的帶有約2230Å厚度的SiO層306。SiN層308安置在帶有約460Å厚度的SiGe層310之上。在退火處理之後，小部分的SiN層308被氧化。然而，SiN層308相較於半導體結構350的SiGeOx層304實質上減少SiGe層310的氧化量，使得SiGe層310實質上沒有發生氧化。
半導體結構354包括安置在帶有約20Å厚度的SiN層314之上的帶有約2230Å厚度的SiO層312。SiN層安置在帶有約460Å厚度的SiGe層316之上。在退火處理之後，小部分的SiN層314被氧化。然而，SiN層314相較於半導體結構350的SiGeOx層304實質上減少SiGe層316的氧化量，使得SiGe層316實質上沒有發生氧化。
缺少在半導體結構352之上的SiGe層310的氧化與缺少在半導體結構354之上的SiGe層316的氧化指示出帶有約20Å或更大厚度的SiN層在上述的退火處理期間實質上減少具有帶有約2200Å厚度的SiO層之半導體結構的下方SiGe層的氧化。
半導體結構356、358、及340顯示實行在攝氏450度之溫度、30巴之壓力、1小時之處理時間、及小於2.0之WERR的退火處理的結果。半導體結構356包括安置在帶有約100Å厚度的SiN層322之上的帶有2230Å厚度的SiO層320。SiN層322安置在帶有約479Å厚度之SiGe層324之上。在退火處理之後，小部分的SiN層322被氧化。然而，SiGe層324保持完整而實質上沒有氧化。
半導體結構358包括安置在帶有約30Å厚度的SiN層328之上的帶有2400Å厚度的SiO層326。SiN層328安置在帶有約460Å厚度之SiGe層330之上。在退火處理之後，整個SiN層328被氧化。然而，SiGe層330實質上保持完整而實質上沒有氧化。
半導體結構360包括安置在帶有約20Å厚度的SiN層334之上的帶有約2190Å厚度的SiO層332。SiN層334安置在帶有約620Å厚度(在退火處理之前)的SiGe層之上。在退火處理之後，大部分的SiN層334被氧化。再者，帶有厚度約280Å的SiGe層的一部分(即，SiGeOx層336)被氧化。未被氧化的SiGe層338的殘留部分具有厚度約340Å。
缺少分別在半導體結構356與358的SiGe層324與330的氧化，及關於SiGeOx層304之小SiGeOx層336指示出帶有約30Å或更大厚度的SiN層在上述的退火處理期間實質上減少包括帶有約2400Å厚度的SiO層之半導體結構的下方SiGe層的氧化。
圖4為根據本發明的一具體例之可用於執行圖1所示的製造處理的處理系統480的圖解頂視圖。群集系統480為包含多個腔室(例如，處理腔室490A-490D、服務腔室491A-491B、或類似物)的模組系統，該等腔室執行各種功能，包括：基板中心找尋及定位、除氣、退火、沉積、蝕刻、及類似物。
群集系統480的處理腔室490A-490D包括沉積腔室、蝕刻腔室、電漿腔室、及退火腔室，設置以執行至少部分的製造處理100，且可進一步包括諸如離子佈植腔室的腔室及類似物。
腔室490A-490D包括處理腔室，其包含在腔室中形成處理容積的腔室壁、在處理容積內支撐基板的基板支撐件、在處理容積中調節壓力的壓力調節器、提供氣體至處理容積的氣體入口、及從處理容積排出氣體的氣體出口。
電漿腔室包括至少一電極以提供功率於電漿腔室封閉，用於在其中產生與維持電漿。電漿腔室也包括電氣耦接於至少一電極的至少一RF電源。
蝕刻腔室包括蝕刻氣體源以供給蝕刻氣體進入處理腔室。沉積腔室包括前驅物氣體源以引導反應氣體進入處理腔室。退火腔室包括退火氣體源以引導退火氣體進入處理腔室。離子佈植腔室包含電弧腔室、定位在電弧腔室內的燈絲、及定位在燈絲與電弧腔室之間的推斥極(repeller)結構。
實行本發明的具體例的群集系統480包括第一沉積腔室，設置以在基板上形成半導體結構，其中半導體結構包括含矽(Si)層或矽鍺(SiGe)層。群集系統480也包括蝕刻腔室，設置以蝕刻圖案化半導體結構，與第二沉積腔室，設置以執行襯墊沉積處理以在半導體結構上方形成襯墊層。群集系統480的第三沉積腔室設置以執行可流動層沉積處理以在襯墊層上方形成可流動層。群集系統480的退火腔室設置以執行退火處理，藉由將可流動層暴露於高壓蒸汽。群集系統480進一步包括微影裝置以使用極紫外光圖案化半導體結構。
群集系統480的多個腔室490A-490D安裝於中央真空傳送腔室488，其容納適用於在腔室490A-490D之間傳送基板的機器人489。真空傳送腔室488保持在真空狀態並提供將基板從一腔室傳送至另一腔室及/或定位在群集系統480的前端的裝載閘腔室484的中間階段。前端環境483定位以選擇性連通裝載閘腔室484。定位在前端環境483中的艙裝載器485能線性及旋轉移動(箭頭482)以在裝載閘腔室484與安裝在前端環境483上的複數個艙487之間傳送基板匣。
群集系統480也包括控制器481，其被編程以執行實行在群集系統880中的各種處理方法。例如，控制器481可設置以控制來自氣體源的各種前驅物與處理氣體的流動並控制關於材料沉積或蝕刻處理的處理參數。控制器481包括可編程中央處理單元(CPU)479，其可操作帶有記憶體477、及大量儲存裝置、輸入控制單元、及顯示器單元(未示出)，諸如電源、時鐘、快取、輸入/輸出(I/O)電路、及類似物耦接於群集系統480的各種部件，以助於控制基板處理。控制器481也包括透過群集系統480中的感測器監測基板處理的硬體。量測諸如基板溫度、腔室大氣壓力、及類似物的系統參數之其他感測器也可提供資訊於控制器481。
為了促進上述群集系統480的控制，CPU 479可為可用在工業設定的任何形式的通用電腦處理器的一種，諸如可編程邏輯控制器(PLC)，用於控制各種腔室與子處理器。記憶體477耦接於CPU 479且記憶體477為非暫態並可為一或多種易於取得的記憶體，諸如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟機、硬碟、或任何其他形式的數位存儲，本端或遠端的。支援電路475耦接於CPU 479，用於以習知方式支援處理器。沉積、蝕刻、退火、及其他處理通常儲存在記憶體477中，典型地為軟體程序。軟體程序也可被第二CPU(未示出)儲存及/或執行，第二CPU位於被CPU 479控制的硬體之遠端。
記憶體477為電腦可讀儲存媒體的形式，其含有當藉由CPU 479實行時，助於群集系統480的操作之指令。記憶體477中的指令為程式產品的形式，諸如實行本發明的方法之程式。程式碼可遵照若干不同程式語言的任一種。在一實例中，本發明可被實行為儲存在用於電腦系統的電腦可讀儲存媒體上的程式產品。程式產品的程式包括具體例的功能(包括本文所述的方法)。示例性電腦可讀儲存媒體包括但不限於：(i)非可寫式儲存媒體(例如，電腦內的唯讀記憶體裝置，諸如可藉由CD-ROM機讀取的CD-ROM碟片、快閃記憶體、ROM晶片或任何類型的固態非揮發半導體記憶體)，在其上的資訊被永久儲存；及(ii) 可寫式儲存媒體(例如，碟片儲存或硬碟機時任何類型的固態隨機存取半導體記憶體)，在其上儲存可變動的資訊。當執行指示本文所述的方法的功能之電腦可讀指令時，此種電腦可讀儲存媒體為本發明的具體例。
儘管前述關於本發明的實施例，在不背離本發明的基本範疇可構想到本發明的其他與進一步實施例，本發明的範疇藉由隨後的申請專利範圍所決定。
100‧‧‧製造處理102、104、106、108‧‧‧操作110‧‧‧退火處理200A～200F‧‧‧半導體結構202‧‧‧基板204‧‧‧第一層206‧‧‧第二層208‧‧‧第三層210‧‧‧襯墊層212‧‧‧介電材料層302、306、312、320、326、332‧‧‧SiO層304、336‧‧‧SiGeOx層308、314、322、328、334‧‧‧SiN層310、316、324、330、338‧‧‧SiGe層350、352、354、356、358、360‧‧‧半導體結構475‧‧‧支援電路477‧‧‧記憶體479‧‧‧CPU480‧‧‧群集系統481‧‧‧控制器482‧‧‧可旋轉移動箭頭483‧‧‧前端環境484‧‧‧裝載閘腔室485‧‧‧艙裝載器487‧‧‧艙488‧‧‧中央真空傳送腔室489‧‧‧機器人490A～490D‧‧‧處理腔室491A、491B‧‧‧服務腔室
為了可詳細地理解本發明的上述特徵，可藉由參照實施例，某些實施例繪示在隨附圖式中，而獲得簡短總結於上之本發明更明確的說明。然而將注意到隨附圖式僅繪示本發明的典型實施例，且因而不被認為限制本發明的範疇，由於本發明可容許其他等效的實施例。
圖1繪示顯示根據本發明的一具體例之在半導體結構上方形成可流動介電層的製造處理的流程圖。
圖2A至2F繪示根據本發明的一具體例之在圖1之每一個製造操作執行之後的半導體結構之一部分的圖解剖面視圖。
圖3繪示根據本發明的一具體例之在執行退火處理之後，帶有多個層之各種組合沉積於上之半導體結構的圖解剖面視圖。
圖4為根據本發明的一具體例之可用於執行參照圖1所說明之製造處理的處理系統之圖解頂視圖。
為了易於理解，已經儘可能地使用相同的元件符號指示圖式中共通的相同元件。料想揭示在一實施例中的元件可有利地使用在其他實施例中而不必明確說明。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
475‧‧‧支援電路
477‧‧‧記憶體
479‧‧‧CPU
480‧‧‧群集系統
481‧‧‧控制器
482‧‧‧可旋轉移動箭頭
483‧‧‧前端環境
484‧‧‧裝載閘腔室
485‧‧‧艙裝載器
487‧‧‧艙
488‧‧‧中央真空傳送腔室
489‧‧‧機器人
490A~490D‧‧‧處理腔室
491A、491B‧‧‧服務腔室

Claims (18)

  1. 一種處理一基板的方法，包含以下步驟：在一基板上形成一半導體結構，其中該半導體結構包括一含矽(Si)層或一矽鍺(SiGe)層；執行一襯墊沉積處理以在該半導體結構上方形成一襯墊層；執行一可流動層沉積處理以在該襯墊層上方沉積一可流動介電層；及藉由將該可流動介電層的一表面暴露於高壓蒸汽而執行一退火處理，其中藉由在該退火處理期間的氧化，該襯墊層的至少一部分逐步地減少。
  2. 如請求項1所述之方法，其中基於在退火處理完成之後留存的該襯墊層的一厚度而決定該襯墊層的一厚度。
  3. 如請求項1所述之方法，其中基於一退火時間、一退火溫度、與該可流動介電層的一厚度的至少一者而決定該襯墊層的一厚度，及其中該襯墊層的該厚度實質上為零。
  4. 如請求項1所述之方法，其中該襯墊層由氮化矽或氮氧化矽所形成。
  5. 如請求項1所述之方法，其中該可流動層沉積處理包含在攝氏0度與攝氏約100度之間的一溫度 與在約1托與約10托之間的一腔室壓力下反應一含矽前驅物與一氧系自由基前驅物，其中該含矽前驅物包括三甲矽烷胺(trisilylamine)。
  6. 如請求項1所述之方法，其中該退火處理包含在從約1巴至約60巴的一壓力、在攝氏約200度至攝氏約600度之間的一溫度、在約5分鐘與約120分鐘之間的一時間期間下，在一退火腔室中將該可流動介電層暴露於高壓蒸汽。
  7. 如請求項1所述之方法，其中該退火處理是一高壓、乾燥蒸汽退火處理。
  8. 一種處理一基板的方法，包含以下步驟：在一基板上形成一半導體結構，其中該半導體結構包括一含矽(Si)層或一矽鍺(SiGe)層；執行一襯墊沉積處理以在該半導體結構上方形成一襯墊層；執行一可流動層沉積處理以在該襯墊層上方沉積一可流動介電層；及藉由將該可流動介電層的一表面暴露於高壓蒸汽而執行一退火處理，其中該襯墊層防止在退火處理期間之該含Si層或SiGe層的氧化，該襯墊層的至少一部分藉由在該退火處理期間的氧化而逐步地減少。
  9. 如請求項8所述之方法，其中基於在退火處 理完成之後留存的該襯墊層的一厚度而決定該襯墊層的一厚度。
  10. 如請求項8所述之方法，其中基於一退火時間、一退火溫度、與該可流動介電層的一厚度的至少一者而決定該襯墊層的一厚度，及其中該襯墊層的該厚度實質上為零。
  11. 如請求項8所述之方法，其中該襯墊層由氮化矽或氮氧化矽所形成。
  12. 如請求項8所述之方法，其中該可流動層沉積處理包含在攝氏0度與攝氏約100度之間的一溫度與在約1托與約10托之間的一腔室壓力下反應一含矽前驅物與一氧系自由基前驅物，其中該含矽前驅物包括三甲矽烷胺(trisilylamine)。
  13. 如請求項8所述之方法，其中該退火處理包含在從約1巴至約60巴的一壓力、在攝氏約200度至攝氏約600度之間的一溫度、在約5分鐘與約120分鐘之間的一時間期間下，在一退火腔室中將該可流動介電層暴露於高壓蒸汽。
  14. 如請求項8所述之方法，其中該退火處理是一高壓、乾燥蒸汽退火處理。
  15. 一種能夠處理一基板的群集系統，包含：一中央真空傳送腔室； 一第一沉積腔室，耦接至該中央真空傳送腔室並設置以處理一基板；一第二沉積腔室，耦接至該中央真空傳送腔室並設置以處理該基板；一第三沉積腔室，耦接至該中央真空傳送腔室並設置以處理該基板；一退火腔室，耦接至該中央真空傳送腔室並設置以處理該基板；一機器人，安置在該中央真空傳送腔室中，該機器人設置以在該第一沉積腔室、該第二沉積腔室、該第三沉積腔室、該退火腔室、與該中央真空傳送腔室的每一者之間傳送該基板；以及一控制器，電氣地耦接至該機器人、該第一沉積腔室、該第二沉積腔室、該第三沉積腔室、該退火腔室、與該中央真空傳送腔室，該控制器設置以致使該群集系統以：在該第一沉積腔室中，在該基板上沉積一含矽(Si)層或一矽鍺(SiGe)層；經由該機器人，將基板從該第一沉積腔室傳送至該第二沉積腔室；在該第二沉積腔室中，在該含矽(Si)層或該矽鍺(SiGe)層上方沉積一襯墊層； 經由該機器人，將基板從該第二沉積腔室傳送至該第三沉積腔室；在該第三沉積腔室中，在該襯墊層上方形成一可流動介電層；經由該機器人，將基板從該第三沉積腔室傳送至該退火腔室；以及藉由在該退火腔室中將該可流動介電層暴露於高壓蒸汽，而在該退火腔室中執行一退火處理，其中基於在退火處理完成之後留存的該襯墊層的一厚度而決定該襯墊層的一厚度，及其中基於一退火時間、一退火溫度、與該可流動介電層的一厚度的至少一者而進一步決定該襯墊層的該厚度。
  16. 如請求項15所述之群集系統，其中該襯墊層的該厚度實質上為零。
  17. 如請求項15所述之群集系統，進一步包含：一蝕刻腔室，設置以在一圖案化處理後蝕刻該基板。
  18. 一種能夠處理一基板的群集系統，包含：一中央真空傳送腔室；一第一沉積腔室，耦接至該中央真空傳送腔室並設置以處理一基板；一第二沉積腔室，耦接至該中央真空傳送腔室並設 置以處理該基板；一第三沉積腔室，耦接至該中央真空傳送腔室並設置以處理該基板；一退火腔室，耦接至該中央真空傳送腔室並設置以處理該基板；一機器人，安置在該中央真空傳送腔室中，該機器人設置以在該第一沉積腔室、該第二沉積腔室、該第三沉積腔室、該退火腔室、與該中央真空傳送腔室的每一者之間傳送該基板；以及一控制器，電氣地耦接至該機器人、該第一沉積腔室、該第二沉積腔室、該第三沉積腔室、該退火腔室、與該中央真空傳送腔室，該控制器設置以致使該群集系統以：在該第一沉積腔室中，在該基板上沉積一含矽(Si)層或一矽鍺(SiGe)層；經由該機器人，將基板從該第一沉積腔室傳送至該第二沉積腔室；在該第二沉積腔室中，在該含矽(Si)層或該矽鍺(SiGe)層上方沉積一襯墊層；經由該機器人，將基板從該第二沉積腔室傳送至該第三沉積腔室；在該第三沉積腔室中，在該襯墊層上方形成一可 流動介電層；經由該機器人，將基板從該第三沉積腔室傳送至該退火腔室；以及藉由在該退火腔室中將該可流動介電層暴露於高壓蒸汽，而在該退火腔室中執行一退火處理，其中該第三沉積腔室設置以在攝氏0度與攝氏約100度之間的一溫度與在約1托與約10托之間的一腔室壓力下反應一含矽前驅物與一氧系自由基前驅物，其中該含矽前驅物包括三甲矽烷胺(trisilylamine)。
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