JP2019500756A - 半導体アプリケーション用の水平ゲートオールアラウンドデバイスのためのナノワイヤ製造方法 - Google Patents
半導体アプリケーション用の水平ゲートオールアラウンドデバイスのためのナノワイヤ製造方法 Download PDFInfo
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- JP2019500756A JP2019500756A JP2018534794A JP2018534794A JP2019500756A JP 2019500756 A JP2019500756 A JP 2019500756A JP 2018534794 A JP2018534794 A JP 2018534794A JP 2018534794 A JP2018534794 A JP 2018534794A JP 2019500756 A JP2019500756 A JP 2019500756A
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Abstract
Description
[0002] 半導体デバイスの次世代の超大規模集積(VLSI)及び極超大規模集積(ULSI)に関しては、サブハーフミクロン以下の特徴を確実に生産することが主要な技術的課題の1つになっている。しかしながら、回路技術の限界が押し上げられるにつれて、VLSI及びULSI技術の寸法は小さくなり、更なる処理能力が要求されることとなった。基板上に信頼度の高いゲート構造を形成することは、VLSI及びULSIの成功にとって、また、個々の基板やダイの回路密度や品質を高めるための継続的な取り組みにとっても重要なことである。
Claims (20)
- 基板上にナノワイヤ構造のためのナノワイヤスペースを形成する方法であって、
処理されるマルチ材料層を上部に有する基板上で横方向エッチング処理を実施することであって、前記マルチ材料層は第1の層と第2の層のペアの繰り返しを含み、前記第1の層と前記第2の層はそれぞれ前記マルチ材料層内で露出される第1の側壁と第2の側壁を有し、前記横方向エッチング処理は主として、前記第2の層を通して前記第2の層をエッチングして前記第2の層に凹部を形成する、横方向エッチング処理を実施することと、
前記凹部を誘電体材料で充填することと、
前記凹部の外へ延在する誘電体層を除去することと
を含む方法。 - 前記凹部に前記誘電体材料を充填する前に、前記凹部にライナ層を形成することを更に含む、請求項1に記載の方法。
- 前記凹部に前記誘電体層を充填する前に、前記第1の層の前記第1の側壁上に形成された前記ライナ層を除去することを更に含む、請求項2に記載の方法。
- 前記ライナ層は2つ以上の層を含む、請求項2に記載の方法。
- 前記ライナ層は、窒化ケイ素、酸窒化ケイ素、酸炭化ケイ素、炭窒化ケイ素、又は酸炭窒化ケイ素、又はドーパントを含むシリコン材料である、請求項2に記載の方法。
- 前記ライナ層はALD処理で製造される、請求項2に記載の方法。
- 前記ライナ層は約0.5nmから約5nmの間の厚さを有する、請求項2に記載の方法。
- 前記マルチ材料層の前記第1の層は真性シリコン層であり、前記マルチ材料層の前記第2の層はSiGe層であり、一方、前記基板はシリコン基板である、請求項1に記載の方法。
- 前記凹部の前記誘電体層を、水平ゲートオールアラウンド(hGAA)構造内のナノワイヤスペーサとして形成することを更に含む、請求項1に記載の方法。
- 前記誘電体層は、窒化ケイ素、酸化ケイ素、酸窒化ケイ素、炭化ケイ素、酸炭化ケイ素、炭窒化ケイ素、及びドープされたシリコン層からなる群から選択される、請求項1に記載の方法。
- 前記凹部を前記誘電体材料で充填することは、前記基板からアモルファスカーボンを充填することを含む、請求項1に記載の方法。
- 前記誘電体層を除去することは更に、
前記凹部を満たした前記誘電体層を等方性エッチング処理によって、又は異方性エッチング処理によってエッチングすることを含む、請求項1に記載の方法。 - 前記マルチ材料層の前記第1の層の第1の側壁からエピシリコン層を形成することを更に含む、請求項3に記載の方法。
- 前記凹部に空隙を形成することを更に含む、請求項13に記載の方法。
- 前記凹部の前記空隙を、水平ゲートオールアラウンド(hGAA)構造内のナノワイヤ空隙スペーサとして形成することを更に含む、請求項14に記載の方法。
- 主として前記第1の層の前記第1の側壁上に形成される酸化改質層を形成するため、前記ライナ層上で酸化物処理工程を実施することを更に含む、請求項3に記載の方法。
- 前記凹部内の前記ライナ層を、前記酸化物処理工程から変化しないように維持することを更に含む、請求項16に記載の方法。
- 前記凹部内に残された前記ライナ層を維持する間に、前記第1の層の前記第1の側壁から、前記酸化改質層を選択的に除去することを更に含む、請求項17に記載の方法。
- 前記マルチ材料層の前記第1の層の前記第1の側壁からエピシリコン層を形成することを更に含む、請求項18に記載の方法。
- 前記凹部に空隙を形成することを更に含む、請求項19に記載の方法。
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US201662275083P | 2016-01-05 | 2016-01-05 | |
US62/275,083 | 2016-01-05 | ||
PCT/US2016/069272 WO2017120102A1 (en) | 2016-01-05 | 2016-12-29 | Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications |
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CN108475695A (zh) | 2018-08-31 |
KR20180091939A (ko) | 2018-08-16 |
CN108475695B (zh) | 2021-10-15 |
KR102577628B1 (ko) | 2023-09-13 |
US20170194430A1 (en) | 2017-07-06 |
WO2017120102A1 (en) | 2017-07-13 |
JP6856651B2 (ja) | 2021-04-07 |
TW201735256A (zh) | 2017-10-01 |
TWI708322B (zh) | 2020-10-21 |
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