CN111095524B - 用于使用保护阻挡物层制造半导体结构的设备和方法 - Google Patents

用于使用保护阻挡物层制造半导体结构的设备和方法 Download PDF

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CN111095524B
CN111095524B CN201880058936.6A CN201880058936A CN111095524B CN 111095524 B CN111095524 B CN 111095524B CN 201880058936 A CN201880058936 A CN 201880058936A CN 111095524 B CN111095524 B CN 111095524B
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CN111095524A (zh
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P·曼纳
A·B·玛里克
K·莱斯彻基什
S·文哈弗贝克
江施施
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Abstract

提供形成包括含硅(Si)层或硅锗(SiGe)层的半导体结构的方法。此方法包括在半导体结构之上沉积保护阻挡物(例如，衬垫)层，在衬垫层之上形成可流动介电层，以及将可流动介电层暴露于高压蒸气。一种群集系统包括配置以形成半导体结构的第一沉积腔室、配置以执行衬垫沉积工艺以形成衬垫层的第二沉积腔室、配置以在衬垫层之上形成可流动介电层的第三沉积腔室、配置以将可流动氧化物层暴露于高压蒸气的退火腔室。

Description

用于使用保护阻挡物层制造半导体结构的设备和方法
背景技术
技术领域
本公开内容的实施例总体上涉及用于使用保护阻挡物(例如，衬垫)层制造半导体结构的方法和设备。
对相关技术的描述
形成在半导体器件中的沟槽的宽度已经变窄至使得沟槽深度比上沟槽宽度的深宽比变得高到足以使得以介电材料填充沟槽成为具有挑战性。在低温下沉积并在高压蒸气下退火的可流动介电材料(诸如硅氧化物(SiOx))可以用有质量的氧化物材料来填充高深宽比沟槽，而不形成任何缝隙或孔洞。然而，暴露至蒸气的任何下方材料(诸如硅(Si))可以转变为氧化物材料，这影响下方层的品质。转变的氧化物的厚度可为数埃例如，当暴露于高压蒸气时，硅锗(SiGe)材料可能特别地易于遭受氧化。
因此，本领域中有着对于解决上述问题的制造方法和设备的需求。
发明内容
本公开内容的实施例总体上涉及用于使用保护阻挡物(例如，衬垫)层来制造半导体的方法和设备。
在一个实施例中，提供一种用于处理基板的方法。此方法包括在基板上形成半导体结构，其中半导体结构包括含硅(Si)层或硅锗(SiGe)层。此方法也包括执行衬垫沉积工艺以在半导体结构之上形成衬垫层。此方法也包括执行可流动层沉积工艺以在衬垫层之上沉积可流动层。此方法也包括通过将可流动层的表面暴露于高压蒸气来执行退火工艺，其中衬垫层防止在退火工艺期间的下方含Si层或SiGe层的氧化，衬垫层的至少一部分通过在退火工艺期间的氧化从而逐渐减少。
在另一实施例中，提供一种能处理基板的群集系统。此群集系统包括第一沉积腔室，所述第一沉积腔室配置以在基板上形成半导体结构，其中半导体结构包括含硅(Si)层或硅锗(SiGe)层。第二沉积腔室配置以在半导体结构之上形成衬垫层。第三沉积腔室配置以在衬垫层之上形成可流动层。退火腔室配置以通过将可流动氧化物层暴露于高压蒸气来执行退火工艺，其中衬垫层防止在退火工艺期间的下方含Si层或SiGe层的氧化。衬垫层的至少一部分通过在退火工艺期间氧化从而逐渐减少。
附图说明
为了可详细地理解本公开内容的上述特征，可通过参照实施例，某些实施例示出在附图中，从而获得简短总结于上的本公开内容的更具体的说明。然而，将注意到附图仅示出本公开内容的典型实施例，且因而不被认为限制本公开内容的范围，因为本公开内容可允许其他等效的实施例。
图1示出显示根据本公开内容的实施例的在半导体结构之上形成可流动介电层的制造工艺的流程图。
图2A至图2F示出根据本公开内容的实施例的在图1的每一个制造操作执行之后的半导体结构的一部分的示意性剖面视图。
图3示出根据本公开内容的实施例的在执行退火工艺之后具有多个层的各种组合沉积于其上的半导体结构的示意性剖面视图。
图4为根据本公开内容的实施例的可用于执行参照图1所描述的制造工艺的集群系统的示意性顶视图。
为了易于理解，已经尽可能地使用相同的附图标记指示附图中共通的相同元件。料想到公开在一个实施例中的元件可以有利地使用在其他实施例中而无需特定叙述。
具体实施方式
本公开内容的实施例总体上涉及用于使用保护阻挡物(例如，衬垫)层来制造半导体结构的方法和设备。特别地，本文所呈现的方法包括：形成包括含硅(Si)层或硅锗(SiGe)层的半导体结构；在半导体结构之上沉积衬垫层；在衬垫层之上形成可流动层；以及将可流动层暴露于高压蒸气，其中衬垫层在退火工艺期间防止下方含Si层或SiGe层的氧化，且衬垫层的至少一部分通过在退火工艺期间的氧化而逐渐减少。
图1示出显示根据本公开内容的实施例的用于在半导体结构之上形成可流动介电层的制造工艺100。制造工艺100可为半导体器件(例如，包括平坦结构、鳍式场效应晶体管(FinFET)结构或水平环绕式栅极(horizontal gate-all-around；hGAA)结构)的多操作制造工艺的一部分。制造工艺100的各操作可表示代码的模块、区段、或部分，其包括一个或多个可执行指令以实施(多个)特定的逻辑功能。在某些实施例中，制造工艺的操作可同时地发生、实质上同时地发生、或以不同于图1所示的次序而发生。制造工艺100的各操作以及操作的组合可通过特殊用途的基于硬件的系统来实施，此特殊用途的基于硬件的系统执行特定的功能或动作、或特殊用途的硬件和计算机指令的组合。
制造工艺开始于操作102，其中半导体结构形成在基板上。半导体结构包括一层或多层含硅材料，诸如硅(Si)材料或含硅锗(SiGe)材料。含Si层或SiGe层可外延生长在基板的表面之上。
基板可为能具有沉积于其上的材料的任何的基板，诸如硅基板，例如硅(掺杂或未掺杂)、结晶硅、氧化硅、掺杂或未掺杂的多晶硅、或类似物、锗基板、硅锗(SiGe)基板、III-V化合物基板，诸如砷化镓基板、碳化硅(SiC)基板、图案化或未图案化的绝缘体上半导体(SOI)基板、碳掺杂的氧化物、氮化硅、诸如液晶显示器(LCD)之类的显示器基板、等离子体显示器、电致发光(EL)灯显示器、太阳能阵列、太阳能面板、发光二极管(LED)基板、玻璃、蓝宝石、或任何其他材料，诸如金属、金属合金、以及其他导电材料。一个或多个电子器件(诸如各种N型金属氧化物半导体(NMOS)和/或P型金属氧化物半导体(PMOS)器件，诸如晶体管、电容器、电阻器、二极管、光二极管、保险丝等)可形成在基板中。料想基板不局限于任何特定尺寸或形状。例如，基板可为圆形基板，具有200mm直径、300mm直径、或其他直径，诸如450mm等。基板也可为任何多边形、方形、矩形、弯曲、或者非圆形的工件。
在操作104处，半导体基板被图案化和蚀刻以在基板上形成特征，诸如沟槽或间隙。例如，半导体基板可在平版印刷术系统中图案化和在蚀刻腔室中蚀刻。在一个实施例中，诸如极紫外光图案化工艺之类的光刻工艺可用于处理半导体结构。在一个实施例中，被蚀刻进半导体结构中的沟槽或间隙的深宽比为约1:1、约2:1、约3:1、约5:1、约10:1、约15:1、约20:1、约30:1、约50:1、约100:1、或更大。
在一个实施例中，沟槽或间隙的深宽比在约10:1与约30:1之间，例如约15:1。术语“深宽比”指代例如形成在基板中的沟槽或间隙之类的特定特征的高度尺寸比上宽度尺寸的比例。
在操作106处，保护阻挡物(例如，衬垫)层形成在半导体结构的侧壁上，同时基板定位在沉积腔室中。在一个实施例中，例如通过化学气相沉积、原子层沉积、或者外延沉积来沉积衬垫层。在另一实施例中，衬垫层通过合适工艺来形成(即，生长)，诸如热氧化工艺或热氮化工艺。衬垫层防止在可流动介电层沉积的沉积期间和退火工艺期间半导体结构或基板的下方层(例如，含Si层或SiGe层)的氧化。
在一个实施例中，衬垫层可由氧化物材料、氮化物材料、或氮氧化物基材料来形成。例如，衬垫材料可为氧化硅(SiO2)、氮化硅(Si3N4，也简称SiN)、或硅氮氧化物(SiOxNy)，诸如SiON或Si2N2O。在一个实施例中，使用沉积腔室通过可流动化学气相沉积(CVD)工艺来沉积氧化物材料。合适的沉积腔室可包括高密度等离子体CVD腔室、等离子体增强CVD腔室、次大气压CVD腔室等等。可适于形成可流动氧化物或氮化物层的合适设备的示例包括系统或/>系统，两者皆可由加利福利亚州圣克拉拉的应用材料公司获得。料想也可使用其他合适的沉积腔室，包括那些来自其他制造者的腔室。
在操作108处，可流动介电层形成在半导体结构的衬垫层之上。本公开内容的可流动介电层可包括任何介电层。在一个实施例中，介电层是含硅层，其可包括但不限于SiC、SiO、SiCN、SiO2、SiOC、SiOCN、SiON或SiN。在一个示例中，为了形成可流动介电层，含硅前驱物、氧基自由基前驱物、以及氮基自由基前驱物被导入沉积腔室，以在基板之上形成可流动介电层。额外地或可替换地，可流动介电层可不含有可追踪的量的碳(即，是无碳的或基本上无碳的)。
可流动介电层可沉积在基板的暴露表面上且沉积进入形成于基板中的沟槽或间隙中。介电层的可流动性可至少部分地由于沉积层中的短链聚硅氮烷聚合物的存在。例如，沉积层可具有硅氮烷型Si—NH—Si主干(即，Si—N—H层)。允许短链聚合物的形成和可流动性的氮可源自于自由基前驱物或含硅前驱物。介电层的可流动性使得介电层能够填充具有高深宽比的沟槽或间隙，而不在沟槽中创造孔隙。尤其是，可流动介电层以在沟槽的侧壁上最少的沉积以由下往上的方式填充沟槽。介电层的可流动性随着可流动介电层的沉积而减少。介电层的可流动性在随后的退火工艺期间被移除。
在一个实施例中，合适的含硅前驱物包括有机硅化合物，其具有约0至约6的氧比上硅原子的比例。合适的有机硅化合物可包括硅氧烷化合物、包括一个或多个卤素部分(例如，氟、氯、溴、或碘)的卤化硅氧烷化合物，诸如四氯硅烷、二氯二乙氧基硅氧烷(dichlorodiethoxysiloxane)、氯三乙氧基硅氧烷(chlorotriethoxysiloxane)、六氯二硅氧烷(hexachlorodisiloxane)、和/或八氯三硅氧烷(octachlorotrisiloxane)、以及氨基硅烷，诸如三硅烷胺(trisilylamine；TSA)、六甲基二硅氮烷(hexamethyldisilazane；HMDS)、杂氮硅三环(silatrane)、四(二甲基氨基)硅烷(tetrakis(dimethylamino)silane)、双(二乙基氨基)硅烷(bis(diethylamino)silane)、三(二甲氨基)氯硅烷(tris(dimethyl-amino)chlorosilane)、以及甲基杂氮硅三环(methylsilatrane)。也可使用其他含硅前驱物，诸如硅烷、卤化硅烷、有机硅烷、以及前述物的任何组合。硅烷可包括甲硅烷(SiH4)以及具有实验式SixH(2x+2)的更高阶硅烷，诸如乙硅烷(Si2H6)、丙硅烷(Si3H8)、以及丁硅烷(Si4H10)、或其他更高阶硅烷，诸如聚氯硅烷(polychlorosilane)。
氧基自由基前驱物可包括氧自由基，其由以下物质形成：氧(O2)、臭氧(O3)、氮氧化合物(诸如NO、NO2、或N2O)、氢氧化合物(诸如水或过氧化物)、碳氧化合物(诸如一氧化碳或二氧化碳)、和其他含氧前驱物、以及前述物的任何组合。氧自由基可远程地产生并与含硅前驱物一起导入。在导入沉积腔室之前，可例如使用远程等离子体源(其可具有CCP(电容耦合等离子体)或ICP(感应耦合等离子体)配置)来活化氧基自由基前驱物。
氮基自由基前驱物可包括氮自由基，其由以下物质形成：氮(N2)、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)、氨(NH3)、以及前述物的任何组合。氮自由基可远程地产生并与含硅前驱物和氧基自由基前驱物一起导入。在导入沉积腔室之前，可例如使用远程等离子体源(其可具有CCP(电容耦合等离子体)或ICP(感应耦合等离子体)配置)来活化氮基自由基前驱物。
在某些实施例中，氧基自由基前驱物以第一容积流率流入沉积腔室，且含硅前驱物以第二容积流率流入沉积腔室。在一个实施例中，第一容积流率比上第二容积流率的比率在约0.3:1与约0.9:1之间，诸如约0.5:1至约0.7:1之间，例如约0.6:1。
在某些实施例中，氮基自由基前驱物以第一容积流率流入沉积腔室，且含硅前驱物以第二容积流率流入沉积腔室。在一个实施例中，第一容积流率比上第二容积流率的比率在约0.2:1与约0.8:1之间，诸如约0.4:1至约0.6:1之间，例如约0.5:1。
料想若使用含有氧和氮自由基两者的自由基前驱物，则可省略氧基自由基前驱物或氮基自由基前驱物。
含硅前驱物、氧基自由基前驱物、以及氮基自由基前驱物可流入沉积腔室并在约0摄氏度与约100度(例如，约65摄氏度)之间的温度下反应。在可流动介电层的形成期间，沉积腔室的压力可维持在约0.1托与约10托之间，例如约0.5托与约6托之间。
在操作110处，半导体结构在退火腔室中经受高压退火工艺。在退火工艺之后，可流动介电层展现更高的密度、更佳的稳定性、以及可耐受更高的温度。在一个实施例中，在退火工艺之前可执行可选的固化工艺。
在高压退火工艺110期间，将退火气体导入具有基板定位于其中的退火腔室。在一个实施例中，退火气体包括氧成分。退火气体也可包括氢成分。在一个实施例中，退火气体包括蒸气和/或蒸气与氧的混合物中的一者。在一个实施例中，退火气体进一步包括以下物质中的一者：臭氧、氧、水蒸气、重水、过氧化物、含氢氧化物化合物、氧同位素(14、15、16、17、18等)、以及氧的非同位素和/或水。过氧化物可为气态的过氧化氢。在某些实施例中，退火气体是包括氢氧离子的氧化剂，诸如但不限于水蒸气或蒸气形式(例如，蒸气)的重水。
在一个示例中，退火气体是干燥蒸气或过热蒸气。干燥蒸气当进入退火腔室时变成过热蒸气。在处理半导体基板的退火腔室的内部表面的温度被维持以防止退火气体的凝结。例如，暴露于退火气体的退火腔室的表面的温度维持在约200摄氏度与约600摄氏度之间。
在退火工艺期间，在退火腔室内的退火气体的压力维持在约1巴与约60巴之间。例如，在退火腔室内的处理气体的压力维持在约2巴以上，诸如例如大于约10巴。在另一示例中，在退火腔室内的退火气体维持在约10巴与约60巴之间的压力下，诸如约20巴与约50巴之间。退火工艺110的处理时间(例如，持温时间)可在约5分钟与约120分钟之间，诸如约30分钟与90分钟之间。
图2A至图2F示出根据本公开内容的实施例的在各制造操作被执行之后的半导体结构的一部分的示意性剖面视图。
图2A示出在多层沉积在基板202之上之后的半导体结构200A的一部分的示意性剖面视图。在一个实施例中，基板202可为块体半导体基板，其中基板包括半导体材料。块体半导体基板可包括任何合适的半导体材料和/或半导体材料的组合，以用于形成半导体结构。在一个实施例中，基板202的半导体材料包括硅材料。在某些实施例中，基板202的半导体材料是掺杂材料，诸如n掺杂的硅(n-Si)或p掺杂的硅(p-Si)。
半导体结构200A包括多层。在一个实施例中，半导体结构200A包括第一层204、第二层206、以及第三层208。第二层206可由至少一种III-V材料所形成，诸如硅锗(SiGe)材料。在一个示例中，第二层206具有锗含量为约10％与约50％之间，诸如约20％与约40％之间。第二层206的硅含量可为约50％与90％之间，诸如约60％与约80％之间。在一个实施例中，使用外延化学气相沉积工艺来沉积第二层206。
在一个实施例中，第一层204由含硅材料所形成，而第三层208由二氧化硅所形成。在另一实施例中，当半导体结构200A由含SiGe材料所制造时，第一层204、第二层206以及第三层208中的每一者为含SiGe层。在又另一实施例中，第一层204和第三层208由任何合适材料所形成，这取决于半导体结构的功能。
图2B示出半导体结构200B的一部分的示意性剖面视图。在图2B中所示的半导体结构200B对应于在执行图案化工艺与蚀刻工艺之后的在图2A中所示的半导体结构200A。半导体结构200B的边缘已被蚀刻。因此，沟槽或间隙可形成在相邻半导体结构之间，诸如半导体结构200B和相邻半导体结构。
在一个实施例中，诸如极紫外光图案化工艺之类的光刻工艺可用于蚀刻半导体结构200A。在另一实施例中，可使用自对准双重或四重图案化工艺以图案化半导体结构200A。
用以蚀刻半导体结构200A的示例蚀刻工艺是反应性离子蚀刻(RIE)工艺。料想可使用类似和其他的蚀刻工艺。在一个实施例中，可使用氯、溴、或氟基化学品执行RIE工艺以各向异性地蚀刻半导体结构200A。
图2C示出半导体结构200C的一部分的示意性剖面视图。半导体结构200C类似于图2B中的半导体结构200B，但半导体结构200C包括经由衬垫沉积工艺被沉积在半导体结构200B之上的衬垫层210。衬垫层210可由硅氮化物(SiN)或硅氮氧化物(SiOxNy)所形成，诸如SiON或Si2N2O。
对衬垫层210执行退火工艺，退火工艺将衬垫层210逐渐地转变成氧化物。衬垫层210至氧化物的转变速率取决于各种因素，诸如退火温度、蒸气的压力、可流动介电层的性质(例如，材料类型和厚度)、退火氧化剂的性质(例如，氧化剂类型和浓度)、和/或退火时间。衬垫层210的厚度在退火工艺期间可改变。退火工艺的性质可影响衬垫层210的厚度。例如，随着退火温度、蒸气的压力、退火时间和/或可流动介电层厚度的增加，衬垫层210的厚度可增加。此外，随着退火温度、蒸气的压力、退火时间、和/或可流动介电层厚度的减少，衬垫层210的厚度可减少。
若整个衬垫层210在退火工艺之前完全地氧化，下方的第三层208和第二层206可开始氧化，造成第三层208和第二层206的缩减品质。因此，将沉积的衬垫层210的厚度被确定以在后续工艺期间(诸如，可流动氧化物沉积工艺和退火工艺)提供下方的第三层208和第二层206对于氧化的足够防护。另一方面，衬垫层210的厚度应足够薄以满足半导体集成电路的密度。
可基于留存在退火工艺的结束处的衬垫210的厚度来确定衬垫层210的厚度。在一个实施例中，衬垫层210的厚度可留存为零(0)或基本上接近于零(0)。在另一实施例中，留存的衬垫层210的厚度可在特定范围中，例如，在约与约/>之间，这取决于半导体集成电路的尺寸要求和/或性能要求，诸如功率消耗、操作速度或密度。
在一个实施例中，衬垫层201的初始宽度可在约与约/>之间，诸如约/>与约/>之间，例如，约/>料想衬垫层210可适用于在后续退火工艺期间防止层204、206、208的氧化。因此，衬垫层210应沉积具有一厚度，所述厚度在后续工艺期间(诸如，可流动氧化物沉积工艺和/或退火工艺)提供下方的含Si层或SiGe层对于氧化的足够保护。又，衬垫层210的厚度应确定为使得在后续工艺之后的衬垫层210的厚度达到半导体集成电路的尺寸要求。在一个实施例中，可基于如之后参照图3所述的衬垫层210的所得厚度来确定衬垫层210的厚度。
图2D示出基板202和半导体结构200D的一部分的示意性剖面视图。半导体结构200D是在介电材料层212沉积之后的在图2C中示出的半导体结构200C。在一个实施例中，介电材料层212是可流动介电层。可流动介电层由介电材料形成，诸如氧化硅材料。介电材料层212可使用高密度等离子体CVD系统、等离子体增强CVD系统、和/或次大气压CVD系统等其他系统来形成。可适于形成介电材料层212的CVD的示例包括ULTIMA HDP系统和ETERNA/>系统，两者可从加利福尼亚州圣克拉拉的应用材料公司获得。料想也可使用来自其他制造者的其他合适CVD系统。
图2E和2F分别示出半导体结构200E和200F的一部分的示意性剖面视图。半导体结构200E和200F对应于在执行退火工艺之后的图2D中所示的半导体结构200D。执行退火工艺以将介电材料层212致密成目标层的组成和品质。在退火工艺期间，衬垫层210逐渐地转变成氧化物。当发生衬垫层210的氧化时，衬垫层210的厚度和宽度减少。在一个实施例中，在退火工艺之后，一部分的衬垫层210留下，如图2E中所示。在另一实施例中，整个衬垫层210被氧化，如图2F中所示。
在一个实施例中，退火工艺包括干燥蒸气退火工艺。蒸气退火工艺可在约200摄氏度与约600摄氏度之间下被执行，诸如约400摄氏度与约500摄氏度之间。蒸气退火工艺可执行持续约5分钟与约120分钟之间的时间量，例如，约100分钟。在一个实施例中，可执行干法退火工艺持续约60分钟。
在另一实施例中，可使用湿法蒸气退火工艺和干法退火工艺两者。在此实施例中，可在湿法蒸气退火工艺之后执行干法退火工艺。
图3示出根据本公开内容的实施例的在执行退火工艺之后具有多个层沉积于其上的半导体结构350、352、354、356、358、以及360的剖面视图。执行在半导体结构350、352、354、356、358、以及360上的退火工艺的结果可用于确定衬垫层的厚度，其在后续退火工艺期间提供下方的含Si层或SiGe层对于氧化的足够保护。
半导体结构350、352、以及354示出在400摄氏度的温度、30巴的压力、1小时的处理时间、以及小于2.5的湿法蚀刻速率比率(WERR)下实行的退火工艺的结果。半导体结构350包括暴露于上述退火工艺的SiO层302和SiGeOx层304。在退火工艺之前，SiO层302具有约的厚度而SiGe层具有约/>的厚度。在退火工艺之后，SiGe层转变成SiGe氧化(SiGeOx)层304。
半导体结构352包括设置在具有约的厚度的氮化硅(SiN)层308上的具有约厚度的SiO层306。SiN层308设置在具有约/>的厚度的SiGe层310上。在退火工艺之后，小部分的SiN层308被氧化。然而，相较于半导体结构350的SiGeOx层304，SiN层308基本上减少SiGe层310的氧化量，从而使得SiGe层310基本上没有发生氧化。
半导体结构354包括设置在具有约的厚度的SiN层314上的具有约/>的厚度的SiO层312。SiN层设置在具有约/>的厚度的SiGe层316上。在退火工艺之后，小部分的SiN层314被氧化。然而，相较于半导体结构350的SiGeOx层304，SiN层314基本上减少SiGe层316的氧化量，从而使得SiGe层316基本上没有发生氧化。
缺少在半导体结构352上的SiGe层310的氧化以及缺少在半导体结构354上的SiGe层316的氧化指示出具有约或更大厚度的SiN层在上述的退火工艺期间基本上减少拥有具有约/>的厚度的SiO层的半导体结构的下方SiGe层的氧化。
半导体结构356、358、以及340示出在450摄氏度的温度、30巴的压力、1小时的处理时间、以及小于2.0的WERR下实行的退火工艺的结果。半导体结构356包括设置在具有约的厚度的SiN层322上的具有约/>的厚度的SiO层320。SiN层322设置在具有约/>的厚度的SiGe层324上。在退火工艺之后，小部分的SiN层322被氧化。然而，SiGe层324保持完整而基本上没有氧化。
半导体结构358包括设置在具有约的厚度的SiN层328上的具有约/>厚度的SiO层326。SiN层328设置在具有约/>的厚度的SiGe层330上。在退火工艺之后，整个SiN层328被氧化。然而，SiGe层330基本上保持完整而基本上没有氧化。
半导体结构360包括设置在具有约的厚度的SiN层334上的具有约/>的厚度的SiO层332。SiN层334设置在具有约/>的厚度(在退火工艺之前)的SiGe层上。在退火工艺之后，大部分的SiN层334被氧化。此外，具有约/>的厚度的SiGe层的一部分(即，SiGeOx层336)被氧化。未被氧化的SiGe层338的其余部分具有约/>的厚度。
缺少分别氧化为半导体结构356和358的SiGe层324和330、以及关于SiGeOx层304的小SiGeOx层336指示出具有约或更大厚度的SiN层在上述的退火工艺期间基本上减少包括具有约/>的厚度的SiO层的半导体结构的下方SiGe层的氧化。
图4为根据本公开内容的实施例的可用于执行图1所示的制造工艺的群集系统480的示意性顶视图。群集系统480为包括多个腔室(例如，工艺腔室490A-490D、服务腔室491A-491B等)的模块系统，所述多个腔室执行各种功能，包括：基板中心找寻和定位、除气、退火、沉积、蚀刻等。
群集系统480的工艺腔室490A-490D包括沉积腔室、蚀刻腔室、等离子体腔室、以及退火腔室，其配置以执行制造工艺100的至少部分，且可进一步包括诸如离子植入腔室之类的腔室等。
腔室490A-490D包括处理腔室，其包括在腔室中形成工艺容积的腔室壁、用于在工艺容积内支撑基板的基板支撑件、用于在工艺容积中调节压力的压力调节器、用于将气体提供到工艺容积的气体入口、以及从工艺容积排出气体的气体出口。
等离子体腔室包括至少一个电极，以将功率提供到等离子体腔室封闭，以用于在其中产生和维持等离子体。等离子体腔室也包括电耦接到至少一个电极的至少一个RF功率源。
蚀刻腔室包括蚀刻气体源，以将蚀刻气体供给至处理腔室中。沉积腔室包括前驱物气体源，以将反应气体引入处理腔室。退火腔室包括退火气体源以将退火气体引入处理腔室。离子植入腔室包括电弧腔室、定位在电弧腔室内的灯丝、以及定位在灯丝与电弧腔室之间的推斥极(repeller)结构。
实践本公开内容的实施例的群集系统480包括第一沉积腔室，其配置以在基板上形成半导体结构，其中半导体结构包括含硅(Si)层或硅锗(SiGe)层。群集系统480也包括：蚀刻腔室，所述蚀刻腔室配置以蚀刻图案化半导体结构；和第二沉积腔室，所述第二沉积腔室配置以执行衬垫沉积工艺以在半导体结构之上形成衬垫层。群集系统480的第三沉积腔室配置以执行可流动层沉积工艺以在衬垫层之上形成可流动层。群集系统480的退火腔室配置以通过将可流动层暴露于高压蒸气以执行退火工艺。群集系统480进一步包括平版印刷术装置以使用极紫外光来图案化半导体结构。
群集系统480的多个腔室490A-490D安装到中央真空传送腔室488，中央真空传送腔室488容纳适用于在腔室490A-490D之间传送基板的机器人489。真空传送腔室488保持在真空状态下并提供用于将基板从一个腔室传送到另一腔室和/或传送到定位在群集系统480的前端处的装载锁定腔室484的中间阶段。前端环境483定位以选择性地连通装载锁定腔室484。定位在前端环境483中的舱装载器485能线性和旋转移动(箭头482)以在装载锁定腔室484与安装在前端环境483上的多个舱487之间传送基板盒。
群集系统480也包括控制器481，其被编程以执行在群集系统880中实施的各种处理方法。例如，控制器481可配置以控制来自气体源的各种前驱物和工艺气体的流动并控制与材料沉积或蚀刻工艺关联的处理参数。控制器481包括可编程中央处理单元(CPU)479，其可与耦接到群集系统480的各种部件的存储器477、以及大容量存储装置、输入控制单元、以及显示器单元(未示出)(诸如功率供应、时钟、高速缓存、输入/输出(I/O)电路等)一起操作，以助于控制基板处理。控制器481也包括通过群集系统480中的传感器来监测基板处理的硬件。测量诸如基板温度、腔室大气压力等的系统参数的其他感测器也可向控制器481提供信息。
为了促进对上述群集系统480的控制，CPU 479可为可用在工业环境中的任何形式的通用计算机处理器中的一种，诸如可编程逻辑控制器(PLC)，以用于控制各种腔室和子处理器。存储器477耦接到CPU 479且存储器477为非暂态的并可为一种或多种易于获得的存储器，诸如随机存取存储器(RAM)、只读存储器(ROM)、软盘驱动、硬盘或任何其他形式的数字存储(本地的或远程的)。支持电路475耦接到CPU 479，以用于以常规方式来支持处理器。沉积、蚀刻、退火、以及其他工艺通常典型地作为软件程序被存储在存储器477中。软件程序也可被第二CPU(未示出)存储和/或执行，第二CPU位于被CPU 479控制的硬件的远程。
存储器477为计算机可读存储介质的形式，其含有当通过CPU 479被执行时促进群集系统480的操作的指令。存储器477中的指令为程序产品的形式，诸如实施本公开内容的方法的程序。程序代码可遵照若干不同程序语言中的任意一种。在一个示例中，本公开内容可被实施作为存储在用于与计算机系统一起使用的计算机可读存储介质上的程序产品。程序产品的(多个)程序包括实施例的功能(包括本文所述的方法)。说明性计算机可读存储介质包括但不限于：(i)不可写存储介质(例如，计算机内的只读存储器装置，诸如可通过CD-ROM机读取的CD-ROM盘、闪存、ROM芯片或任何类型的固态非易失性半导体存储器)，在其上的信息被永久存储；以及(ii)可写存储介质(例如，盘存储或硬盘驱动或者任何类型的固态随机存取半导体存储器)，在其上存储可变动信息。当实施指示本文所述的方法的功能的计算机可读指令时，此种计算机可读存储介质是本公开内容的实施例。
尽管前述内容涉及本公开内容的实施例，但是在不背离本公开内容的基本范围的情况下，可构想到本公开内容的其他和进一步实施例，且本公开内容的范围通过所附权利要求所确定。

Claims (20)

1.一种处理基板的方法，包括：
在所述基板上形成半导体结构，其中所述半导体结构包括含硅(Si)层或硅锗(SiGe)层；
执行衬垫沉积工艺以在所述半导体结构之上形成衬垫层，其中所述衬垫层形成在所述半导体结构的顶表面和侧壁上；
执行可流动层沉积工艺以在设置在所述半导体结构的顶表面和侧壁上的所述衬垫层之上沉积可流动介电层；以及
通过将所述可流动介电层的表面暴露于高压蒸气从而执行退火工艺，其中所述衬垫层的至少一部分通过在所述退火工艺期间的氧化从而逐步地减少。
2.如权利要求1所述的方法，其中基于在所述退火工艺完成之后保留的所述衬垫层的厚度从而确定所述衬垫层的厚度。
3.如权利要求1所述的方法，其中基于退火时间、退火温度以及所述可流动介电层的厚度中的至少一者从而确定所述衬垫层的厚度，并且其中所述衬垫层的所述厚度为零。
4.如权利要求1所述的方法，其中所述衬垫层由氮化硅或氮氧化硅形成。
5.如权利要求1所述的方法，其中所述可流动层沉积工艺包括在0摄氏度与100摄氏度之间的温度以及在1托与10托之间的腔室压力下使得含硅前驱物和氧基自由基前驱物反应，其中所述含硅前驱物包括三甲硅烷胺。
6.如权利要求1所述的方法，其中所述退火工艺包括在从1巴至60巴的压力下、在200摄氏度至600摄氏度之间的温度下、在5分钟与120分钟之间的时间期间，在退火腔室中将所述可流动介电层暴露于高压蒸气。
7.如权利要求1所述的方法，其中所述退火工艺是高压、干燥蒸气退火工艺。
8.一种处理基板的方法，包括：
在所述基板上形成半导体结构，其中所述半导体结构包括含硅(Si)层或硅锗(SiGe)层；
执行衬垫沉积工艺以在所述半导体结构之上形成衬垫层，其中所述衬垫层形成在所述半导体结构的顶表面和侧壁上；
执行可流动层沉积工艺以在设置在所述半导体结构的顶表面和侧壁上的所述衬垫层之上沉积可流动介电层；以及
通过将所述可流动介电层的表面暴露于高压蒸气从而执行退火工艺，其中所述衬垫层防止在退火工艺期间的所述含硅(Si)层或所述硅锗(SiGe)层的氧化，所述衬垫层的至少一部分通过在所述退火工艺期间的氧化从而逐步地减少。
9.如权利要求8所述的方法，其中基于在所述退火工艺完成之后保留的所述衬垫层的厚度从而确定所述衬垫层的厚度。
10.如权利要求8所述的方法，其中基于退火时间、退火温度以及所述可流动介电层的厚度中的至少一者从而确定所述衬垫层的厚度。
11.如权利要求8所述的方法，其中所述衬垫层的厚度被确定成使得在所述退火工艺完成之后保留的所述衬垫层的厚度等于零，并且其中所述衬垫层由氮化硅或氮氧化硅形成。
12.如权利要求8所述的方法，其中所述可流动层沉积工艺包括在0摄氏度与100摄氏度之间的温度下、在1托与10托之间的腔室压力下使得含硅前驱物和氧基自由基前驱物反应，其中所述含硅前驱物包括三甲硅烷胺。
13.如权利要求8所述的方法，其中所述退火工艺包括在从1巴至60巴的压力下、在200摄氏度至600摄氏度之间的温度下、在5分钟与120分钟之间的时间期间，在退火腔室中将所述可流动介电层暴露于高压蒸气。
14.如权利要求8所述的方法，其中所述退火工艺是高压、干燥蒸气退火工艺。
15.一种配置以处理基板的群集系统，包括：
中央真空传送腔室；
第一沉积腔室，所述第一沉积腔室耦接至所述中央真空传送腔室并配置以处理基板；
第二沉积腔室，所述第二沉积腔室耦接至所述中央真空传送腔室并配置以处理所述基板；
第三沉积腔室，所述第三沉积腔室耦接至所述中央真空传送腔室并配置以处理所述基板；
退火腔室，所述退火腔室耦接至所述中央真空传送腔室并配置以处理所述基板；
机器人，所述机器人设置在所述中央真空传送腔室中，所述机器人配置以在所述第一沉积腔室、所述第二沉积腔室、所述第三沉积腔室、所述退火腔室以及所述中央真空传送腔室中的每一者之间传送所述基板；以及
控制器，所述控制器电耦接至所述机器人、所述第一沉积腔室、所述第二沉积腔室、所述第三沉积腔室、所述退火腔室以及所述中央真空传送腔室，所述控制器配置以使所述群集系统：
在所述第一沉积腔室中，在所述基板上沉积含硅(Si)层或硅锗(SiGe)层；
经由所述机器人，将所述基板从所述第一沉积腔室传送至所述第二沉积腔室；
在所述第二沉积腔室中，在所述含硅(Si)层或所述硅锗(SiGe)层之上沉积衬垫层，其中所述衬垫层形成在半导体结构的顶表面和侧壁上；
经由所述机器人，将所述基板从所述第二沉积腔室传送至所述第三沉积腔室；
在所述第三沉积腔室中，在设置在所述半导体结构的顶表面和侧壁上的所述衬垫层之上形成可流动介电层；
经由所述机器人，将所述基板从所述第三沉积腔室传送至所述退火腔室；以及
通过在所述退火腔室中将所述可流动介电层暴露于高压蒸气，来在所述退火腔室中执行退火工艺。
16.如权利要求15所述的群集系统，其中所述第二沉积腔室配置以将所述衬垫层沉积成一厚度，以使得所述衬垫层的最小部分保留直到所述退火工艺的结束为止。
17.如权利要求15所述的群集系统，其中所述第二沉积腔室配置以沉积具有一厚度的所述衬垫层，其中所述衬垫层的所述厚度基于在所述退火工艺的结束时的保留的衬垫层的厚度来确定。
18.如权利要求15所述的群集系统，其中所述第二沉积腔室配置以沉积具有一厚度的所述衬垫层，其中所述衬垫层的所述厚度进一步基于退火时间、退火温度和所述可流动介电层的厚度中的至少一者来确定。
19.如权利要求15所述的群集系统，其中所述第二沉积腔室配置以沉积具有一厚度的所述衬垫层，其中所述衬垫层的所述厚度被确定，以使得在所述退火工艺的结束时的保留的衬垫层的厚度等于零。
20.如权利要求15所述的群集系统，其中所述衬垫层由氮化硅或氮氧化硅形成。
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