SE0302045D0 - Work piece processing by pulsed electric discharges in solid-gas plasmas - Google Patents

Work piece processing by pulsed electric discharges in solid-gas plasmas

Info

Publication number
SE0302045D0
SE0302045D0 SE0302045A SE0302045A SE0302045D0 SE 0302045 D0 SE0302045 D0 SE 0302045D0 SE 0302045 A SE0302045 A SE 0302045A SE 0302045 A SE0302045 A SE 0302045A SE 0302045 D0 SE0302045 D0 SE 0302045D0
Authority
SE
Sweden
Prior art keywords
work piece
anode
discharges
solid
biasing
Prior art date
Application number
SE0302045A
Other languages
English (en)
Inventor
Vladimir Kouznetsov
Original Assignee
Chemfilt R & D Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemfilt R & D Ab filed Critical Chemfilt R & D Ab
Priority to SE0302045A priority Critical patent/SE0302045D0/sv
Publication of SE0302045D0 publication Critical patent/SE0302045D0/sv
Priority to EP04749165.9A priority patent/EP1654396B1/en
Priority to PCT/SE2004/001129 priority patent/WO2005005684A1/en
Priority to US10/563,864 priority patent/US8262869B2/en
Priority to US13/608,537 priority patent/US9941102B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
SE0302045A 2003-07-10 2003-07-10 Work piece processing by pulsed electric discharges in solid-gas plasmas SE0302045D0 (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0302045A SE0302045D0 (sv) 2003-07-10 2003-07-10 Work piece processing by pulsed electric discharges in solid-gas plasmas
EP04749165.9A EP1654396B1 (en) 2003-07-10 2004-07-09 Work piece processing by pulsed electric discharges in solid-gas plasma
PCT/SE2004/001129 WO2005005684A1 (en) 2003-07-10 2004-07-09 Work piece processing by pulsed electric discharges in solid-gas plasma
US10/563,864 US8262869B2 (en) 2003-07-10 2004-07-09 Work piece processing by pulsed electric discharges in solid-gas plasma
US13/608,537 US9941102B2 (en) 2003-07-10 2012-09-10 Apparatus for processing work piece by pulsed electric discharges in solid-gas plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302045A SE0302045D0 (sv) 2003-07-10 2003-07-10 Work piece processing by pulsed electric discharges in solid-gas plasmas

Publications (1)

Publication Number Publication Date
SE0302045D0 true SE0302045D0 (sv) 2003-07-10

Family

ID=27764967

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302045A SE0302045D0 (sv) 2003-07-10 2003-07-10 Work piece processing by pulsed electric discharges in solid-gas plasmas

Country Status (4)

Country Link
US (2) US8262869B2 (sv)
EP (1) EP1654396B1 (sv)
SE (1) SE0302045D0 (sv)
WO (1) WO2005005684A1 (sv)

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CN117353712A (zh) * 2023-12-05 2024-01-05 华中科技大学 一种基于数据驱动的强流脉冲电源组件交替复用方法

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US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US7615931B2 (en) 2005-05-02 2009-11-10 International Technology Center Pulsed dielectric barrier discharge
US8642135B2 (en) * 2005-09-01 2014-02-04 Micron Technology, Inc. Systems and methods for plasma doping microfeature workpieces
GB2437080B (en) * 2006-04-11 2011-10-12 Hauzer Techno Coating Bv A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus
CN100408511C (zh) * 2006-08-11 2008-08-06 中国科学院上海硅酸盐研究所 一种氮化硅/氮化钛纳米复合材料的制备方法
EP2102889B1 (en) * 2006-12-12 2020-10-07 Evatec AG Rf substrate bias with high power impulse magnetron sputtering (hipims)
DE102007011230A1 (de) * 2007-03-06 2008-09-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetronplasmaanlage
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
EP2075823B1 (en) * 2007-12-24 2012-02-29 Huettinger Electronic Sp. z o. o Current change limiting device
DE102008028140B3 (de) * 2008-06-13 2009-12-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer transparenten und leitfähigen Metalloxidschicht durch gepulstes, hochionisierendes Magnetronsputtern
JP2010065240A (ja) * 2008-09-08 2010-03-25 Kobe Steel Ltd スパッタ装置
DE102008057286B3 (de) * 2008-11-14 2010-05-20 Systec System- Und Anlagentechnik Gmbh & Co. Kg Verfahren und Vorrichtung zur PVD-Beschichtung mit schaltbarer Biasspannung
JP5339965B2 (ja) * 2009-03-02 2013-11-13 株式会社アルバック スパッタリング装置用の交流電源
US20230377839A1 (en) * 2009-05-01 2023-11-23 Advanced Energy Industries, Inc. Apparatus to produce a waveform
JP5588645B2 (ja) * 2009-09-15 2014-09-10 川崎重工業株式会社 横断面に肉厚部位を有する複合材料構造物製造用治具
US8642140B2 (en) * 2011-03-09 2014-02-04 United Technologies Corporation Ceramic coating deposition
US9023437B2 (en) * 2012-05-15 2015-05-05 United Technologies Corporation Ceramic coating deposition
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
BR102013031497A2 (pt) * 2013-12-06 2015-11-10 Mahle Int Gmbh processo de revestimento de um cilindro de um motor a combustão interna e cilindro/camisa de motor
JP6403269B2 (ja) * 2014-07-30 2018-10-10 株式会社神戸製鋼所 アーク蒸発源
CN104651779A (zh) * 2015-02-11 2015-05-27 烟台首钢磁性材料股份有限公司 一种用于钕铁硼磁体的镀膜设备及镀膜工艺
US9812305B2 (en) 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US10373811B2 (en) * 2015-07-24 2019-08-06 Aes Global Holdings, Pte. Ltd Systems and methods for single magnetron sputtering
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
DE102018204585A1 (de) * 2017-03-31 2018-10-04 centrotherm international AG Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung
RU2671522C1 (ru) * 2017-08-14 2018-11-01 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Способ плазменного упрочнения внутренней цилиндрической поверхности
KR101886755B1 (ko) * 2017-11-17 2018-08-09 한국원자력연구원 다중 펄스 플라즈마를 이용한 음이온 공급의 연속화 시스템 및 방법
CN113474483A (zh) * 2019-02-07 2021-10-01 朗姆研究公司 能时间和/或空间上调制一或更多等离子体的衬底处理
EP3945541A1 (en) * 2020-07-29 2022-02-02 TRUMPF Huettinger Sp. Z o. o. Pulsing assembly, power supply arrangement and method using the assembly
US11955324B2 (en) * 2020-08-07 2024-04-09 Jefferson Science Associates, Llc High power pulse systems for surface processing
US11823868B2 (en) 2021-06-11 2023-11-21 Applied Materials, Inc. Hardware switch on main feed line in a radio frequency plasma processing chamber

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117353712A (zh) * 2023-12-05 2024-01-05 华中科技大学 一种基于数据驱动的强流脉冲电源组件交替复用方法
CN117353712B (zh) * 2023-12-05 2024-02-20 华中科技大学 一种基于数据驱动的强流脉冲电源组件交替复用方法

Also Published As

Publication number Publication date
EP1654396B1 (en) 2017-03-22
EP1654396A1 (en) 2006-05-10
WO2005005684A1 (en) 2005-01-20
US20130062198A1 (en) 2013-03-14
US9941102B2 (en) 2018-04-10
US8262869B2 (en) 2012-09-11
US20060278518A1 (en) 2006-12-14

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