CN104651779A - 一种用于钕铁硼磁体的镀膜设备及镀膜工艺 - Google Patents

一种用于钕铁硼磁体的镀膜设备及镀膜工艺 Download PDF

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CN104651779A
CN104651779A CN201510070271.9A CN201510070271A CN104651779A CN 104651779 A CN104651779 A CN 104651779A CN 201510070271 A CN201510070271 A CN 201510070271A CN 104651779 A CN104651779 A CN 104651779A
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vacuum chamber
source electrode
magnetic body
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杨昆昆
彭众杰
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Yantai Shougang Magnetic Materials Inc
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Priority to JP2016011218A priority patent/JP6081625B2/ja
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Abstract

本发明主要涉及一种用于钕铁硼磁体的镀膜设备及镀膜工艺，专用镀膜设备的基本原理为双层辉光等离子表面冶金，其主要特征结构包括真空室，真空室中部平行等距且相互绝缘的源极和阴极，源极和阴极外的隔热栅，真空室上方的阳极，真空室下方的氩气入口以及真空室后方的真空系统，真空室外的测温系统；表面生成的金属膜层厚度均匀且金属靶材的利用率高，整个镀膜过程中温度相对偏低，对磁体的损害较小，可控性强，无污染，对人体无损害，设备结构简单，靶材限制性小。

Description

一种用于钕铁硼磁体的镀膜设备及镀膜工艺
技术领域：
本发明涉及钕铁硼磁体加工技术领域，具体地讲是一种用于钕铁硼磁体的镀膜设备及镀膜工艺。
背景技术：
新型永磁钕铁硼磁体是1983出现的第三代稀土材料，通常由Nd2Fe14B主相及晶界处的富钕相组成，是一种磁性功能材料，其耐蚀性差且磁性结构易受温度影响。采用真空镀膜的方式可以在钕铁硼磁体表面进行防腐性金属膜层和功能性金属膜层的电镀，且真空镀膜过程安全，无污染，对磁体损伤小。
目前钕铁硼磁体普遍采用多弧离子镀、磁控溅射、磁控多弧离子镀在钕铁硼磁体表面进行耐蚀性或功能性膜层的制备，利用上述方法镀膜时一方面对靶材的限制性大（靶材应不导磁），另一方面靶材利用率低，当需要镀一些贵重金属时成本太高难以接受。
采用真空蒸镀可以在钕铁硼磁体表面形成一层金属膜层，蒸镀时靶材利用率较多弧离子镀、磁控溅射、磁控多弧离子镀高，但对于熔点较高的靶材，蒸镀时真空室内温度太高，会使钕铁硼磁体的磁性组织发生变化进而影响其充磁后的性能。
发明内容：
本发明的目的是克服上述已有技术的不足，而提供一种用于钕铁硼磁体的镀膜设备。
本发明的另一目的提供钕铁硼磁体的镀膜工艺。
本发明主要解决现有的钕铁硼磁体表面真空镀膜靶材利用率低、真空室温度过高等问题。
本发明的技术方案是：一种用于钕铁硼磁体的镀膜设备，包括真空室，其特殊之处在于，所述的真空室中设相互绝缘等距分布的源极和阴极，源极和阴极外设置隔热栅，真空室上方设阳极；阳极和阴极分别接在脉冲偏压电源的正极和负极，阳极和源极分别接在直流偏压电源的正极和负极，且阳极接地；真空室后侧设真空系统，真空室的底部设氩气入口，真空室的前侧设真空室炉门，真空室炉门中部设置有观察窗，在真空室外设光学测温仪，光学测温仪位置与观察窗对应。
　　进一步的，所述的源极和阴极相互绝缘且平行等距，源极表面与相对应的平行阴极表面的距离为5-200mm。
　进一步的，所述的源极和阴极的结构为平板式、立式或筒式。
本发明的镀膜工艺，其特殊之处在于，所述的镀膜工艺流程如下：
a对钕铁硼磁体进行除油，酸洗后置于烘箱中进行烘干；
b将预镀金属靶材作为源极，钕铁硼磁体作为阴极；钕铁硼磁体表面与相对应的金属靶材源极表面之间的距离保持在5-200mm之间；
c将真空室抽真空到3*10-3-9*10-1Pa后，冲氩气至10-100Pa；
d打开阴极电源并逐步提高电压，对钕铁硼磁体进行辉光等离子清洗，清洗完成后将阴极电压调小到零；
e打开源极电源并提高源极电压，对源极靶材进行辉光等离子清洗，清洗完成后调低源极电压至零；
f逐步提高源极电压和阴极电压，并使源极与阴极的电压差，始终保持0-500v之间（源极电压大于阴极电压）；当钕铁硼磁体表面达到一定温度后，停止对源极和阴极的电压增加，使温度保持稳定，并开始计时保温一定时间；
g保温结束后，关闭电源使钕铁硼磁体冷却至室温后，取出钕铁硼磁体测量表面膜层厚度。
本发明所述的一种用于钕铁硼磁体的镀膜设备及镀膜工艺与已有技术相比具有突出的实质性特点和显著进步，1、钕铁硼磁体表面生成的金属膜层厚度均匀且金属靶材的利用率高；2、整个镀膜过程中温度相对偏低，对磁体的损害较小；3、整个镀膜过程可控性强，无污染，对人体无损害；4、设备结构简单，靶材限制性小。
附图说明：
图1是本发明的结构示意图；
图2为平板式源极、阴极放置结构示意图；
图3为立式源极、阴极放置结构示意图；
图4为筒式源极、阴极放置结构示意图。
其中，1阳极 2源极 3阴极 4真空室炉门 5观察窗 6光学测温仪 7氩气入口 8真空室 9脉冲偏压电源 10直流偏压电源 11真空系统  12隔热栅。
具体实施方式：
为了更好地理解与实施，下面结合附图给出具体实施例详细说明本发明；所举实施例只用于解释本发明，所举设备结构图片只代表本发明的基本构造，并不限制被发明的范围。
实施例1，参见图1、2，以源极2和阴极3的结构采用平板式为例；在真空室8中设置有置于顶端的阳极1，真空室8内设置相互绝缘等距分布阴极3和源极2，二者相互平行，源极2表面与相对应的阴极3表面的距离为5-200mm；在阴极3与源极2外设置隔热栅12，阳极1和阴极3分别接在脉冲偏压电源9的正极和负极，阳极1和源极2分别接在直流偏压电源10的正极和负极，且阳极1接地；真空系统11设置在真空室8后侧，氩气入口7在真空室8底部，真空室8的前侧安装真空室炉门4，真空室炉门4中部有观察窗5，在真空室8外安装光学测温仪6，光学测温仪6位置与观察窗5对应，通过光学测温仪6可以测量阴极3表面温度；源极2为预镀金属，预镀金属包括镝、铽、钬、镨、钕、铌、钼、铜、钛、铝、钴或其合金，阴极3为钕铁硼磁体。
实施例2，参见图3，同实施例1，不同之处是源极2和阴极3的结构采用立式。
实施例3，参见图4，同实施例1，不同之处是源极2和阴极3的结构采用筒式。
本发明是采用上述钕铁硼磁体镀膜设备的镀膜工艺，基本原理为双层辉光等离子表面冶金，基本镀膜工艺流程如下：
1、对钕铁硼磁体进行除油，酸洗后置于烘箱中进行烘干；
2、将预镀金属靶材作为源极，钕铁硼磁体作为阴极；钕铁硼磁体表面与相对应的金属靶材源极表面之间的距离保持在5-200mm之间；
3、将真空室抽真空到3*10-3-9*10-1Pa后，冲氩气至10-100Pa；
4、打开阴极电源并逐步提高电压，对钕铁硼磁体进行辉光等离子清洗，清洗完成后将阴极电压调小到零；
5、打开源极电源并提高源极电压，对源极靶材进行辉光等离子清洗，清洗完成后调低源极电压至零；
6、逐步提高源极电压和阴极电压，并使源极与阴极的电压差，始终保持0-500v之间（源极电压大于阴极电压）；当钕铁硼磁体表面达到一定温度后，停止对源极和阴极的电压增加，使温度保持稳定，并开始计时保温一定时间；
7、保温结束后，关闭电源使钕铁硼磁体冷却至室温后，取出钕铁硼磁体测量表面膜层厚度。

Claims (4)

1. 一种用于钕铁硼磁体的镀膜设备，包括真空室（8），其特征在于，所述的真空室（8）中设相互绝缘等距分布的源极（2）和阴极（3），源极（2）和阴极（3）外设置隔热栅（12），真空室（8）上方设阳极（1）；阳极（1）和阴极（3）分别接在脉冲偏压电源（9）的正极和负极，阳极（1）和源极（2）分别接在直流偏压电源（10）的正极和负极，且阳极（1）接地；真空室（8）后侧设真空系统（11），真空室（8）的底部设氩气入口（7），真空室（8）的前侧设真空室炉门（4），真空室炉门（4）中部设置有观察窗（5），在真空室（8）外设光学测温仪（6），光学测温仪（6）位置与观察窗（5）对应。
2.　　根据权利要求1所述的一种用于钕铁硼磁体的镀膜设备，其特征在于，所述的源极（2）和阴极（3）相互绝缘且平行等距，源极（2）表面与相对应的平行阴极（3）表面的距离为5-200mm。
3.根据权利要求1所述的一种用于钕铁硼磁体的镀膜设备，其特征在于，所述的源极（2）和阴极（3）的结构为平板式、立式或筒式。
4.采用权利要求1-３的任一镀膜设备的镀膜工艺，其特征在于，所述的镀膜工艺流程如下：
a对钕铁硼磁体进行除油，酸洗后置于烘箱中进行烘干；
b将预镀金属靶材作为源极，钕铁硼磁体作为阴极；钕铁硼磁体表面与相对应的金属靶材源极表面之间的距离保持在5-200mm之间；
c将真空室抽真空到3*10-3-9*10-1Pa后，冲氩气至10-100Pa；
d打开阴极电源并逐步提高电压，对钕铁硼磁体进行辉光等离子清洗，清洗完成后将阴极电压调小到零；
e打开源极电源并提高源极电压，对源极靶材进行辉光等离子清洗，清洗完成后调低源极电压至零；
f逐步提高源极电压和阴极电压，并使源极与阴极的电压差，始终保持0-500v之间（源极电压大于阴极电压）；当钕铁硼磁体表面达到一定温度后，停止对源极和阴极的电压增加，使温度保持稳定，并开始计时保温一定时间；
g保温结束后，关闭电源使钕铁硼磁体冷却至室温后，取出钕铁硼磁体测量表面膜层厚度。
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