CN106119795A - 利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法 - Google Patents

利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法 Download PDF

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CN106119795A
CN106119795A CN201610630926.8A CN201610630926A CN106119795A CN 106119795 A CN106119795 A CN 106119795A CN 201610630926 A CN201610630926 A CN 201610630926A CN 106119795 A CN106119795 A CN 106119795A
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赵斌
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Shenzhen Valley Energy Holdings Co., Ltd.
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Shenzhen Fourth Energy Technology Co Ltd
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract

本发明公开一种利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法，该方法是将负极基材安装到极片架上；开启连续式真空磁控溅射镀膜设备，调整设备至可镀膜工艺条件；投入待镀膜基片架‑铜箔；离子源等离子轰击剥离铜箔表面氧化层、去除表面尖峰；直流溅镀C‑Si膜；加热退火处理；出料后特性检查；本发明通过磁控溅射真空镀膜技术在锂电池负极铜箔上沉积一层C‑Si复合负极薄膜，以提高负极电极电性能。

Description

利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法
技术领域
本发明涉及锂电池器件及锂电池材料制造技术领域，具体涉及一种利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法。
背景技术
锂离子电池常用负极材料为石墨材料，具有众多优良的素质，但随之锂电池技术的发展，对负极比容量，循环性能以及安全性能等都提出了更高的要求。Si负极也因其具有较高的比容量(4200mAh/g)受到了科学界的关注，但由于其在嵌锂过程中会发生严重的的膨胀，体积膨胀达300％，限制了Si负极在锂离子负极中的应用。
硅碳复合材料可以很好的解决Si负极膨胀的问题，同时具有较高的比容量(1400mAh/g)，成为了未来锂离子电池负极材料的理想材料。
发明内容
本发明的目的在于针对现有技术的缺陷和不足，提供一种利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，它通过磁控溅射真空镀膜技术在锂电池负极铜箔上沉积一层C-Si复合负极薄膜，以提高负极电极电性能。
为实现上述目的，本发明采用的技术方案是：一种利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，它包括以下步骤：
a、将负极基材安装到极片架上；
b、开启连续式真空磁控溅射镀膜设备，调整设备至可镀膜工艺条件；
c、投入待镀膜基片架-铜箔；
d、离子源等离子轰击剥离铜箔表面氧化层、去除表面尖峰；
e、直流溅镀C-Si膜；
f、加热退火处理；
g、出料后特性检查。
优选的，所述步骤a中的负极基材为薄膜型复合材料。
优选的，所述步骤b中可镀膜工艺条件为：本底真空度5x10-3Pa、工艺气氛3x10- 1Pa、加热温度80-200℃、离子源功率0.2-3W、直流磁控溅射阴极功率1-10W、镀膜速度0.1-5m/s。
优选的，所述步骤e中同时在铜箔上溅镀C及Si材料，两种材料溅镀时相互掺杂，在铜箔表面形成C-Si膜。
采用上述结构后，本发明有益效果为：
1、利用现有的真空磁控溅射镀膜实验设备，实现掺杂溅射制备C-Si复合薄膜。
2、利用对单阴极各种材料版面和阴极溅射功率的控制，实现了掺杂比例灵活可调节。
3、真空环境中高温退火，提高了材料的结晶度。
具体实施方式
下面将结合本发明实施方案，对本发明实施方案中的技术进行清楚、完整地描述，显然，所描述的实施方案仅仅是本发明一部分方案，而不是全部的实施方案。基于本发明中的实施方案，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案，都属于本发明保护的范围。
本具体实施方式采用以下具体步骤：
a、将负极基材安装到极片架上；
b、开启连续式真空磁控溅射镀膜设备，调整设备至可镀膜工艺条件；
c、投入待镀膜基片架-铜箔；
d、离子源等离子轰击剥离铜箔表面氧化层、去除表面尖峰；
e、直流溅镀C-Si膜；
f、加热退火处理；
g、出料后特性检查。
步骤a中的负极基材为薄膜型复合材料；步骤b中可镀膜工艺条件为：本底真空度5x10-3Pa、工艺气氛3x10-1Pa、加热温度80-200℃、离子源功率0.2-3W、直流磁控溅射阴极功率1-10W、镀膜速度0.1-5m/s；步骤e中同时在铜箔上溅镀C及Si材料，两种材料溅镀时相互掺杂，在铜箔表面形成C-Si膜。
本具体实施方式使用真空磁控溅射镀膜技术对锂电池C-Si负极涂层进行处理，在真空环境下，利用真空等离子体轰击剥离铜箔表面氧化层、去除表面尖峰，通过直流溅镀铜膜和加热退火处理；形成一层致密的负极涂层，以提高锂电池负极电极电性能。
尽管已经示出和描述了本发明的实施方案，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施方案进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (4)

1.利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，其特征在于它包括以下步骤：
a、将负极基材安装到极片架上；
b、开启连续式真空磁控溅射镀膜设备，调整设备至可镀膜工艺条件；
c、投入待镀膜基片架-铜箔；
d、离子源等离子轰击剥离铜箔表面氧化层、去除表面尖峰；
e、直流溅镀C-Si膜；
f、加热退火处理；
g、出料后特性检查。
2.根据权利要求1所述的利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，其特征在于所述步骤a中的负极基材为薄膜型复合材料。
3.根据权利要求1所述的利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，其特征在于所述步骤b中可镀膜工艺条件为：本底真空度5x10-3Pa、工艺气氛3x10-1Pa、加热温度80-200℃、离子源功率0.2-3W、直流磁控溅射阴极功率1-10W、镀膜速度0.1-5m/s。
4.根据权利要求1所述的利用真空磁控溅射镀膜技术制备锂电池C-Si负极涂层的方法，其特征在于所述步骤e中同时在铜箔上溅镀C及Si材料，两种材料溅镀时相互掺杂，在铜箔表面形成C-Si膜。
CN201610630926.8A 2016-08-04 2016-08-04 利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法 Pending CN106119795A (zh)

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CN108390017A (zh) * 2018-01-31 2018-08-10 电子科技大学 一种基于磁控溅射原理的金属锂复合负极制备装置
CN113410445A (zh) * 2021-06-18 2021-09-17 电子科技大学 一种用于二次电池的硅碳复合物负极材料及其制备方法

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CN108565394B (zh) * 2018-04-12 2021-04-02 太原科技大学 利用磁控溅射技术制备锂硫电池正极片的方法

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CN101640261A (zh) * 2008-08-01 2010-02-03 中信国安盟固利新能源科技有限公司 锂离子二次电池负极及制备方法、以及锂离子二次电池
JP5652161B2 (ja) * 2010-11-26 2015-01-14 日産自動車株式会社 電気デバイス用Ｓｉ合金負極活物質
CN102709531B (zh) * 2012-01-09 2016-11-23 宁德新能源科技有限公司 一种锂离子电池及其负极
CN103474632B (zh) * 2012-06-07 2016-08-03 中国科学院物理研究所 一种用于锂电池的负极材料及其制备方法和应用

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Publication number Priority date Publication date Assignee Title
CN108390017A (zh) * 2018-01-31 2018-08-10 电子科技大学 一种基于磁控溅射原理的金属锂复合负极制备装置
CN113410445A (zh) * 2021-06-18 2021-09-17 电子科技大学 一种用于二次电池的硅碳复合物负极材料及其制备方法

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