JP4229803B2 - 透明導電膜の製造方法 - Google Patents
透明導電膜の製造方法 Download PDFInfo
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- JP4229803B2 JP4229803B2 JP2003362628A JP2003362628A JP4229803B2 JP 4229803 B2 JP4229803 B2 JP 4229803B2 JP 2003362628 A JP2003362628 A JP 2003362628A JP 2003362628 A JP2003362628 A JP 2003362628A JP 4229803 B2 JP4229803 B2 JP 4229803B2
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- substrate
- film
- transparent conductive
- conductive film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
この製造方法は、透明導電膜が太陽電池の透明電極層となる膜である時に好ましく、太陽電池に要求される、従来は得られなかった低抵抗を実現できる。また基板がCu、In、Ga、Seの内の少なくとも2種を含んだ化合物薄膜を具備している時に好ましく、前記化合物薄膜によって基板表面に存することが多い凹凸に起因する膜欠陥の生成が抑制される。
図1は、本発明の一実施形態における透明導電膜の製造方法に使用する製膜装置の概略構成を示す断面図である。
「CIGS膜が形成された基板」は、先に図3から図5を用いて説明した基板と同様に、CIGS太陽電池に用いられている積層膜、すなわちCIGS膜を光吸収層とする積層膜をガラス上に形成したもので、具体的にはZnO/CdS/CIGS/Mo/ガラスといった、積層膜とガラスとからなる構成を有している。CIGSは1μm以上の結晶粒を有し、CIGS膜の表面粗さは中心線平均粗さ(Ra)10nm以上となるため、ZnO膜の表面も同程度の表面粗さとなっている。Mo以外は導電性を有していないので、CIGS膜上のITO膜の表面で測定されるシート抵抗はITO膜のみのシート抵抗の値に等しい。
3 基板電極
4 ターゲット
6 磁石
13 基板
Claims (1)
- 真空室内を真空引きした後、前記真空室内にArガスを一定の流量で供給しながら、前記基板を載置する基板電極に負電位を印加しつつ、前記基板に対向して設けられたITOターゲットに電力を印加することで、前記真空室内にプラズマを発生させ、前記基板の表面に透明導電膜を形成する方法であって、
前記基板の中心線平均粗さ(Ra)は10nm以上70nm以下であり、前記ターゲットの平行磁場強度が300〜400ガウスの際、前記基板に印加する電力密度(WD1)と前記ターゲットに印加する電力密度(WD2)との比(WD1/WD2)が0.2以上0.4以下であることを特徴とする透明導電膜の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003362628A JP4229803B2 (ja) | 2003-10-23 | 2003-10-23 | 透明導電膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003362628A JP4229803B2 (ja) | 2003-10-23 | 2003-10-23 | 透明導電膜の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005126758A JP2005126758A (ja) | 2005-05-19 |
JP2005126758A5 JP2005126758A5 (ja) | 2006-11-02 |
JP4229803B2 true JP4229803B2 (ja) | 2009-02-25 |
Family
ID=34642194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003362628A Expired - Fee Related JP4229803B2 (ja) | 2003-10-23 | 2003-10-23 | 透明導電膜の製造方法 |
Country Status (1)
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JP (1) | JP4229803B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008156708A (ja) * | 2006-12-25 | 2008-07-10 | Idemitsu Kosan Co Ltd | 透明導電膜の製造方法 |
KR20110091683A (ko) * | 2008-10-20 | 2011-08-12 | 이데미쓰 고산 가부시키가이샤 | 광기전력 소자 및 그 제조 방법 |
JP5465859B2 (ja) * | 2008-10-20 | 2014-04-09 | 出光興産株式会社 | 光起電力素子、および、その製造方法 |
JP5530618B2 (ja) * | 2008-10-20 | 2014-06-25 | 出光興産株式会社 | 光起電力素子、および、その製造方法 |
JP5465860B2 (ja) * | 2008-10-20 | 2014-04-09 | 出光興産株式会社 | 光起電力素子、および、その製造方法 |
CN102394210B (zh) * | 2011-11-24 | 2013-12-11 | 深圳市创益科技发展有限公司 | 用于制备薄膜太阳能电池透明导电膜的设备及方法 |
TWI643969B (zh) * | 2013-12-27 | 2018-12-11 | 日商半導體能源研究所股份有限公司 | 氧化物半導體的製造方法 |
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2003
- 2003-10-23 JP JP2003362628A patent/JP4229803B2/ja not_active Expired - Fee Related
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JP2005126758A (ja) | 2005-05-19 |
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